JP5198506B2 - 機能性デバイスの製造方法並びに薄膜トランジスタ及び圧電式インクジェットヘッド - Google Patents

機能性デバイスの製造方法並びに薄膜トランジスタ及び圧電式インクジェットヘッド Download PDF

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Publication number
JP5198506B2
JP5198506B2 JP2010107764A JP2010107764A JP5198506B2 JP 5198506 B2 JP5198506 B2 JP 5198506B2 JP 2010107764 A JP2010107764 A JP 2010107764A JP 2010107764 A JP2010107764 A JP 2010107764A JP 5198506 B2 JP5198506 B2 JP 5198506B2
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Japan
Prior art keywords
layer
precursor composition
composition layer
functional
manufacturing
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Expired - Fee Related
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JP2010107764A
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English (en)
Japanese (ja)
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JP2011238714A (ja
JP2011238714A5 (enrdf_load_stackoverflow
Inventor
達也 下田
毅明 宮迫
敏彦 金田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
Original Assignee
Seiko Epson Corp
Japan Science and Technology Agency
National Institute of Japan Science and Technology Agency
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Priority to JP2010107764A priority Critical patent/JP5198506B2/ja
Application filed by Seiko Epson Corp, Japan Science and Technology Agency, National Institute of Japan Science and Technology Agency filed Critical Seiko Epson Corp
Priority to US13/696,551 priority patent/US9202895B2/en
Priority to PCT/JP2011/060581 priority patent/WO2011138958A1/ja
Priority to KR1020127031785A priority patent/KR101442943B1/ko
Priority to TW100116093A priority patent/TWI514585B/zh
Priority to CN201180021920.6A priority patent/CN102870245B/zh
Publication of JP2011238714A publication Critical patent/JP2011238714A/ja
Publication of JP2011238714A5 publication Critical patent/JP2011238714A5/ja
Application granted granted Critical
Publication of JP5198506B2 publication Critical patent/JP5198506B2/ja
Priority to US14/531,723 priority patent/US9123752B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
JP2010107764A 2010-05-07 2010-05-07 機能性デバイスの製造方法並びに薄膜トランジスタ及び圧電式インクジェットヘッド Expired - Fee Related JP5198506B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2010107764A JP5198506B2 (ja) 2010-05-07 2010-05-07 機能性デバイスの製造方法並びに薄膜トランジスタ及び圧電式インクジェットヘッド
PCT/JP2011/060581 WO2011138958A1 (ja) 2010-05-07 2011-05-06 機能性デバイスの製造方法、強誘電体材料層の製造方法、電界効果トランジスタの製造方法、並びに薄膜トランジスタ、電界効果トランジスタ、及び圧電式インクジェットヘッド
KR1020127031785A KR101442943B1 (ko) 2010-05-07 2011-05-06 기능성 디바이스의 제조방법, 강유전체 재료층의 제조방법, 전계 효과 트렌지스터의 제조방법, 및 박막 트랜지스터, 전계 효과 트렌지스터, 및 전압식 잉크젯 헤드
TW100116093A TWI514585B (zh) 2010-05-07 2011-05-06 A manufacturing method of a functional element, a thin film transistor, and a piezoelectric ink jet head
US13/696,551 US9202895B2 (en) 2010-05-07 2011-05-06 Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head
CN201180021920.6A CN102870245B (zh) 2010-05-07 2011-05-06 功能设备的制造方法、场效应晶体管和薄膜晶体管
US14/531,723 US9123752B2 (en) 2010-05-07 2014-11-03 Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric ink jet head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010107764A JP5198506B2 (ja) 2010-05-07 2010-05-07 機能性デバイスの製造方法並びに薄膜トランジスタ及び圧電式インクジェットヘッド

Related Child Applications (1)

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JP2012280468A Division JP5615894B2 (ja) 2012-12-25 2012-12-25 薄膜トランジスタの製造方法、アクチュエーターの製造方法及び光学デバイスの製造方法、並びに薄膜トランジスタ及び圧電式インクジェットヘッド

Publications (3)

Publication Number Publication Date
JP2011238714A JP2011238714A (ja) 2011-11-24
JP2011238714A5 JP2011238714A5 (enrdf_load_stackoverflow) 2012-10-11
JP5198506B2 true JP5198506B2 (ja) 2013-05-15

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JP2010107764A Expired - Fee Related JP5198506B2 (ja) 2010-05-07 2010-05-07 機能性デバイスの製造方法並びに薄膜トランジスタ及び圧電式インクジェットヘッド

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JP (1) JP5198506B2 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5901942B2 (ja) 2011-11-09 2016-04-13 国立研究開発法人科学技術振興機構 機能性デバイスの製造方法及び機能性デバイスの製造装置
JP6286636B2 (ja) * 2012-07-19 2018-03-07 俊 保坂 センサ・デバイスおよびその製造方法
JP2014175453A (ja) * 2013-03-08 2014-09-22 Japan Science & Technology Agency 酸化物層及び酸化物層の製造方法、並びにその酸化物層を備えるキャパシタ、半導体装置、及び微小電気機械システム
JP6247684B2 (ja) * 2013-03-22 2017-12-13 国立研究開発法人科学技術振興機構 誘電体層及び誘電体層の製造方法、並びに固体電子装置及び固体電子装置の製造方法
KR101511932B1 (ko) 2013-11-12 2015-04-13 한국과학기술원 반도체 제조용 액상 조성물, 상기를 이용한 반도체 박막 및 박막 트랜지스터의 제조방법
JP6347084B2 (ja) 2014-02-18 2018-06-27 アドバンストマテリアルテクノロジーズ株式会社 強誘電体セラミックス及びその製造方法
JP6584881B2 (ja) 2015-09-11 2019-10-02 株式会社東芝 半導体装置
JP6708597B2 (ja) * 2017-11-03 2020-06-10 俊 保坂 センサ・デバイスおよびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07156414A (ja) * 1993-12-03 1995-06-20 Canon Inc インクジェット記録ヘッドの製造方法、インクジェット記録ヘッド、および記録装置
JP3442069B2 (ja) * 2001-05-28 2003-09-02 松下電器産業株式会社 プラズマディスプレイパネル、その製造方法及び転写フィルム
JP2003151362A (ja) * 2001-08-31 2003-05-23 Toppan Printing Co Ltd 導電膜および導電膜の製造方法
JP2006166385A (ja) * 2004-11-10 2006-06-22 Nakayo Telecommun Inc 通話録音機能付きゲートウェイ装置
JP4767616B2 (ja) * 2005-07-29 2011-09-07 富士フイルム株式会社 半導体デバイスの製造方法及び半導体デバイス
US7989361B2 (en) * 2006-09-30 2011-08-02 Samsung Electronics Co., Ltd. Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof

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