JP5189803B2 - 測定ステーション及びそれを用いる研磨機械 - Google Patents
測定ステーション及びそれを用いる研磨機械 Download PDFInfo
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- JP5189803B2 JP5189803B2 JP2007201961A JP2007201961A JP5189803B2 JP 5189803 B2 JP5189803 B2 JP 5189803B2 JP 2007201961 A JP2007201961 A JP 2007201961A JP 2007201961 A JP2007201961 A JP 2007201961A JP 5189803 B2 JP5189803 B2 JP 5189803B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
この発明の第二の実施態様によれば、半導体ウェハを研磨するための研磨ステーションと、研磨ステーション外にある出口ステーションとを備えた研磨機械とともに用いるための測定ステーションであって、その測定ステーションは光学測定ユニットと、ウェハを受取って測定位置に測定の間保持するための前記測定ステーションの保持ユニットとを含み、かつ、前記研磨機械の出口ステーションに接続され、前記光学測定ユニットは測定の位置決めを行うように動作可能な光学系を備え、その光学系は顕微鏡ベースの分光光度計であり、かつ、照射光の焦点をウェハ上に合わせ、照射されたウェハから反射される光を集束するための集束光学素子と、集束された反射光と前記照射光との間を空間的に分離するためのビームスプリッタとを備え、前記測定ステーションの設置面積はウェハ自体と同様のサイズである測定ステーションが提供される。
この発明の第三の実施態様によれば、半導体ウェハを研磨するための研磨機械であって、ウェハに適用されるべき研磨ツールと、光学測定ステーションとを含み、光学測定ステーションは研磨機械の出口ステーションに接続され、かつ、分光測光測定ユニットと、ウェハを受取りそれを測定位置に測定の間保持するための前記測定ステーションの保持ユニットとを含み、前記分光測光測定ユニットは測定の位置決めを行うように動作可能な光学系を備え、その光学系は顕微鏡ベースの分光光度計であり、かつ、照射光の焦点をウェハ上に合わせ、照射されたウェハから反射される光を集束するための集束光学素子と、集束された反射光と前記照射光との間を空間的に分離するためのビームスプリッタとを備え、前記測定ステーションの設置面積はウェハ自体と同様のサイズである研磨機械が提供される。
られており、真空システム46に連結されている。真空パッド44は吸着を生じさせるので、掴み具42はウェハ25を持ち上げてそれをウェハ集合位置からウェハ測定位置に動かすことができる。さらに、真空状態は測定の間維持されており、測定が一旦完了するときのみ解放される。
25がいつ水トラックからうまく移動したかを決定する。ここで上述されたプロセスが次のウェハに対して始まり得る。
ことができる。
Claims (12)
- 半導体ウェハを研磨するための研磨ステーションと、研磨ステーション外にある出口ステーションとを備えた研磨機械とともに用いるための測定ステーションであって、
その測定ステーションは前記研磨機械の出口ステーション内に取付け可能であるよう構成され、かつ、前記ウェハのパラメータを測定するための分光測光測定ユニットと、ウェハを受取って測定位置に測定の間保持するための前記測定ステーションの保持ユニットとを含み、前記分光測光測定ユニットは測定の位置決めを行うように動作可能な光学系を備え、その光学系は顕微鏡ベースの分光光度計であり、かつ、
照射光の焦点をウェハ上に合わせ、照射されたウェハから反射される光を集束するための集束光学素子と、
集束された反射光と前記照射光との間を空間的に分離するためのビームスプリッタとを備え、
前記測定ステーションの設置面積はウェハ自体と同様のサイズである測定ステーション。 - 前記測定ユニットは前記ウェハの少なくとも最上層の厚さを測定するよう動作可能である、請求項1に記載の測定ステーション。
- 前記測定ユニットは研磨されたウェハの光学的検査を実行するよう動作可能である、請求項1に記載の測定ステーション。
- 前記光学系は、分離された集束光の光路内に設けられ、前記分離された集束光を電荷結合素子(CCD)に向けるピンホールミラーを含む、請求項1に記載の測定ステーション。
- 測定ユニットおよび保持ユニットは、保持されているウェハの少なくとも一部分が見えて光学的測定を可能にする窓によって分離される、請求項1に記載の測定ステーション。
- 前記保持ユニットはウェハの表面に対し垂直な軸に沿って可動なアセンブリを含み、それによってウェハの測定位置における前記保持を可能にする、請求項1に記載の測定ステーション。
- 半導体ウェハを研磨するための研磨ステーションと、研磨ステーション外にある出口ステーションとを備えた研磨機械とともに用いるための測定ステーションであって、その測定ステーションは光学測定ユニットと、ウェハを受取って測定位置に測定の間保持するための前記測定ステーションの保持ユニットとを含み、かつ、前記研磨機械の出口ステーションに接続され、前記光学測定ユニットは測定の位置決めを行うように動作可能な光学系を備え、その光学系は顕微鏡ベースの分光光度計であり、かつ、
照射光の焦点をウェハ上に合わせ、照射されたウェハから反射される光を集束するための集束光学素子と、
集束された反射光と前記照射光との間を空間的に分離するためのビームスプリッタとを備え、
前記測定ステーションの設置面積はウェハ自体と同様のサイズである
測定ステーション。 - 半導体ウェハを研磨するための研磨機械であって、ウェハに適用されるべき研磨ツールと、光学測定ステーションとを含み、光学測定ステーションは研磨機械の出口ステーションに接続され、かつ、分光測光測定ユニットと、ウェハを受取りそれを測定位置に測定の間保持するための前記測定ステーションの保持ユニットとを含み、
前記分光測光測定ユニットは測定の位置決めを行うように動作可能な光学系を備え、その光学系は顕微鏡ベースの分光光度計であり、かつ、
照射光の焦点をウェハ上に合わせ、照射されたウェハから反射される光を集束するための集束光学素子と、
集束された反射光と前記照射光との間を空間的に分離するためのビームスプリッタとを備え、
前記測定ステーションの設置面積はウェハ自体と同様のサイズである
研磨機械。 - 研磨されたウェハを測定ステーションに供給するためのロボットをさらに含む、請求項8に記載の研磨機械。
- 前記測定ユニットは前記ウェハの少なくとも最上層の厚さを測定するよう動作可能である、請求項8に記載の研磨機械。
- 前記光学系は、分離された集束光の光路内に設けられ、前記分離された集束光を光検出器に向けるピンホールミラー含む、請求項8に記載の研磨機械。
- 測定ユニットおよび保持ユニットは、保持されているウェハの少なくとも一部分が見えて光学的測定を可能にする窓によって分離される、請求項8に記載の研磨機械。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL113829 | 1995-05-23 | ||
IL11382995A IL113829A (en) | 1995-05-23 | 1995-05-23 | Apparatus for optical inspection of wafers during polishing |
Related Parent Applications (1)
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JP8106756A Division JPH09109023A (ja) | 1995-05-23 | 1996-04-26 | ウェハ研磨機、厚さ測定ユニット、ウェハを水の中に収める方法、および厚さを測定する方法 |
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JP2007331106A JP2007331106A (ja) | 2007-12-27 |
JP5189803B2 true JP5189803B2 (ja) | 2013-04-24 |
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JP8106756A Pending JPH09109023A (ja) | 1995-05-23 | 1996-04-26 | ウェハ研磨機、厚さ測定ユニット、ウェハを水の中に収める方法、および厚さを測定する方法 |
JP2007201961A Expired - Lifetime JP5189803B2 (ja) | 1995-05-23 | 2007-08-02 | 測定ステーション及びそれを用いる研磨機械 |
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JP8106756A Pending JPH09109023A (ja) | 1995-05-23 | 1996-04-26 | ウェハ研磨機、厚さ測定ユニット、ウェハを水の中に収める方法、および厚さを測定する方法 |
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US (5) | US6045433A (ja) |
JP (2) | JPH09109023A (ja) |
DE (1) | DE19612195A1 (ja) |
FR (1) | FR2734631B1 (ja) |
IL (1) | IL113829A (ja) |
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-
1995
- 1995-05-23 IL IL11382995A patent/IL113829A/xx not_active IP Right Cessation
- 1995-06-29 US US08/497,382 patent/US6045433A/en not_active Expired - Lifetime
-
1996
- 1996-03-25 FR FR9603677A patent/FR2734631B1/fr not_active Expired - Fee Related
- 1996-03-27 DE DE19612195A patent/DE19612195A1/de not_active Withdrawn
- 1996-04-26 JP JP8106756A patent/JPH09109023A/ja active Pending
-
1998
- 1998-03-25 US US09/047,944 patent/US5957749A/en not_active Expired - Lifetime
-
2000
- 2000-02-04 US US09/498,926 patent/US6368181B1/en not_active Expired - Lifetime
-
2001
- 2001-07-05 US US09/898,467 patent/US6752689B2/en not_active Expired - Lifetime
-
2007
- 2007-08-02 JP JP2007201961A patent/JP5189803B2/ja not_active Expired - Lifetime
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2008
- 2008-08-08 US US12/188,624 patent/US20080297794A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US5957749A (en) | 1999-09-28 |
JPH09109023A (ja) | 1997-04-28 |
FR2734631B1 (fr) | 2000-10-20 |
US20080297794A1 (en) | 2008-12-04 |
IL113829A (en) | 2000-12-06 |
DE19612195A1 (de) | 1996-11-28 |
IL113829A0 (en) | 1995-08-31 |
US6045433A (en) | 2000-04-04 |
US6752689B2 (en) | 2004-06-22 |
US6368181B1 (en) | 2002-04-09 |
FR2734631A1 (fr) | 1996-11-29 |
JP2007331106A (ja) | 2007-12-27 |
US20020051135A1 (en) | 2002-05-02 |
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