JP2007331106A - 測定ステーション、研磨機械、ウェハを研磨するための方法、および、ウェハの光学的測定方法 - Google Patents
測定ステーション、研磨機械、ウェハを研磨するための方法、および、ウェハの光学的測定方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
【解決手段】半導体ウェハ25を研磨するための研磨ステーションと、研磨ステーション外にある出口ステーションとを含む研磨機械とともに用いるための測定ステーション130であって、研磨機械の測定ステーション内に取付け可能に構成され、分光測光ユニット110と、ウェハを受取って測定位置に測定の間保持するための保持ユニット132とを含む。
【選択図】図11
Description
られており、真空システム46に連結されている。真空パッド44は吸着を生じさせるので、掴み具42はウェハ25を持ち上げてそれをウェハ集合位置からウェハ測定位置に動かすことができる。さらに、真空状態は測定の間維持されており、測定が一旦完了するときのみ解放される。
25がいつ水トラックからうまく移動したかを決定する。ここで上述されたプロセスが次のウェハに対して始まり得る。
ことができる。
Claims (26)
- 半導体ウェハを研磨するための研磨ステーションと、研磨ステーション外にある出口ステーションとを含む研磨機械とともに用いるための測定ステーションであって、研磨機械の測定ステーション内に取付け可能であるよう構成され、分光測光ユニットと、ウェハを受取って測定位置に測定の間保持するための保持ユニットとを含む、測定ステーション。
- 前記測定ユニットは水の少なくとも最上層の厚さを測定するよう動作可能である、請求項1に記載の測定ステーション。
- 前記測定ユニットは研磨されたウェハの光学的検査を実行するよう動作可能である、請求項1に記載の測定ステーション。
- 前記測定ユニットは測定の位置決めを行なうよう動作可能な光学結像系を含む、請求項1に記載の測定ステーション。
- 測定ユニットは、照射光の焦点をウェハ上に合わせ、照射されたウェハから反射される光を集めるための焦点合わせ光学素子と、照射光と集められた反射光との間を空間的に分離するためのビームスプリッタとを含む光学系を含む、請求項1に記載の測定ステーション。
- 光学系は、照射光の焦点をウェハ上に合わせ、照射されたウェハから反射される光を集めるための焦点合わせ光学素子と、照射光と集められた反射光との間を空間的に分離するためのビームスプリッタと、分離された、集められた光の光路内に設けられ、前記分離された、集められた光を電荷結合素子(CCD)に向けるピンホールミラーとを含む、請求項5に記載の測定ステーション。
- 測定ユニットおよび保持ユニットは、保持されているウェハの少なくともある部分が見えて光学的測定を可能にする窓によって分離される、請求項1に記載の測定ステーション。
- 前記保持ユニットはウェハの表面に対し垂直な軸に沿って可動なアセンブリを含み、それによってウェハの測定位置における前記保持を可能にする、請求項1に記載の測定ステーション。
- ウェハの表面のおおよそあるサイズの、少なくとも1つの寸法において、設置面積を有する、請求項1に記載の測定ステーション。
- 半導体ウェハを研磨するための研磨ステーションと、研磨ステーション外にある出口ステーションとを含む研磨機械とともに用いるための測定ステーションであって、光学測定ユニットと、ウェハを受取って測定位置に測定の間保持するための保持ユニットとを含み、ウェハの表面のおおよそあるサイズの、少なくとも1つの寸法において設置面積を有する研磨機械の出口ステーションに関連付けられる、測定ステーション。
- 半導体ウェハを研磨するための研磨機械であって、ウェハに適用されるべき研磨ツールと、光学測定ステーションとを含み、光学測定ステーションは研磨機械の出口ステーションに関連付けられ、分光測光ユニットと、ウェハを受取りそれを測定位置に測定の間保持するための保持ユニットとを含む、研磨機械。
- 前記研磨ツールは研磨機である、請求項11に記載の研磨機械。
- 研磨されたウェハを測定ステーションに供給するためのロボットをさらに含む、請求項11に記載の研磨機械。
- 前記測定ユニットは水の少なくとも最上層の厚さを測定するよう動作可能である、請求項11に記載の研磨機械。
- 前記測定ユニットは測定の位置決めを行なうよう動作可能な光学結像系を含む、請求項11に記載の研磨機械。
- 測定ユニットは、照射光の焦点をウェハ上に合わせ、照射されたウェハから反射される光を集めるための焦点合わせ光学素子と、照射光と集められた反射光との間を空間的に分離するためのビームスプリッタとを含む光学系を含む、請求項11に記載の研磨機械。
- 光学系は、照射光の焦点をウェハ上に合わせ、照射されたウェハから反射される光を集めるための焦点合わせ光学素子と、照射光と集められた反射光との間を空間的に分離するためのビームスプリッタと、分離された、集められた光の光路内に設けられ、前記分離された、集められた光を光検出器に向けるピンホールミラーとを含む、請求項15に記載の研磨機械。
- 測定ユニットおよび保持ユニットは、保持されているウェハの少なくともある部分が見えて光学的測定を可能にする窓によって分離される、請求項11に記載の研磨機械。
- 前記測定ステーションは、ウェハの表面のおおよそあるサイズの、少なくとも1つの寸法において、設置面積を有する、請求項11に記載の研磨機械。
- 半導体ウェハを研磨機械によって研磨するための方法であって、
i.前記研磨機械の研磨ツールをウェハに適用し、それによって前記研磨を実行するステップと、
ii.研磨されたウェハを前記研磨機械の出口ステーションに供給するステップと、
iii.分光測光を研磨されたウェハに対し出口ステーションにある間適用するステップとを含む、方法。 - 半導体ウェハを研磨機械によって研磨するための方法であって、
i.前記研磨機械の研磨ツールをウェハに適用し、それによって前記研磨を実行するステップと、
ii.研磨されたウェハを前記研磨機械の出口ステーションに供給するステップと、
iii.光学的検査を研磨されたウェハに対し出口ステーションにある間適用するステップとを含む、方法。 - 少なくとも1つの層を上に有する半導体物品の表面を研磨するための方法であって、
i.前記半導体物品の前記表面を研磨ユニットの作業エリアにおいて研磨するステップを含み、前記研磨するステップは作業媒体内において実行され、前記方法はさらに、
ii.前記物品を、前記作業ゾーンから、前記作業ゾーン外にありかつ前記研磨ユニットに近接する光学測定ステーションの測定エリア内に運ぶステップを含み、前記測定エリアは前記光学測定ステーションの前記光学アセンブリから実質的に透明な窓によって分離され、前記方法はさらに、
iii.前記物品を、固定された位置に保持するステップと、
iv.前記物品表面の少なくとも1つの層の所望されるパラメータを前記透明な窓を介して測定するステップとを含む、方法。 - 前記所望されるパラメータは前記少なくとも1つの層の厚さである、請求項22に記載の方法。
- 前記測定するステップは分光測光をなすことを含む、請求項22に記載の方法。
- 前記物品は半導体ウェハを含む、請求項22に記載の方法。
- 水に濡れたウェハを光学的に測定する方法であって、
水を入れたユニットおよび光学窓により規定される測定領域を提供するステップと、
前記測定領域の外側に、水を入れたユニットの水から前記光学窓によって分離された光学系を提供するステップと、
前記光学系を用いて前記測定領域の中に測定個所を置くステップと、
前記光学窓および水を通して光学測定を行なうステップとを備える、ウェハの光学的測定方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL11382995A IL113829A (en) | 1995-05-23 | 1995-05-23 | Apparatus for optical inspection of wafers during polishing |
IL113829 | 1995-05-23 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8106756A Division JPH09109023A (ja) | 1995-05-23 | 1996-04-26 | ウェハ研磨機、厚さ測定ユニット、ウェハを水の中に収める方法、および厚さを測定する方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007331106A true JP2007331106A (ja) | 2007-12-27 |
JP5189803B2 JP5189803B2 (ja) | 2013-04-24 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8106756A Pending JPH09109023A (ja) | 1995-05-23 | 1996-04-26 | ウェハ研磨機、厚さ測定ユニット、ウェハを水の中に収める方法、および厚さを測定する方法 |
JP2007201961A Expired - Lifetime JP5189803B2 (ja) | 1995-05-23 | 2007-08-02 | 測定ステーション及びそれを用いる研磨機械 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP8106756A Pending JPH09109023A (ja) | 1995-05-23 | 1996-04-26 | ウェハ研磨機、厚さ測定ユニット、ウェハを水の中に収める方法、および厚さを測定する方法 |
Country Status (5)
Country | Link |
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US (5) | US6045433A (ja) |
JP (2) | JPH09109023A (ja) |
DE (1) | DE19612195A1 (ja) |
FR (1) | FR2734631B1 (ja) |
IL (1) | IL113829A (ja) |
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US11100628B2 (en) | 2019-02-07 | 2021-08-24 | Applied Materials, Inc. | Thickness measurement of substrate using color metrology |
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Also Published As
Publication number | Publication date |
---|---|
US6752689B2 (en) | 2004-06-22 |
US6368181B1 (en) | 2002-04-09 |
JP5189803B2 (ja) | 2013-04-24 |
JPH09109023A (ja) | 1997-04-28 |
US6045433A (en) | 2000-04-04 |
IL113829A0 (en) | 1995-08-31 |
US5957749A (en) | 1999-09-28 |
US20020051135A1 (en) | 2002-05-02 |
FR2734631A1 (fr) | 1996-11-29 |
US20080297794A1 (en) | 2008-12-04 |
FR2734631B1 (fr) | 2000-10-20 |
IL113829A (en) | 2000-12-06 |
DE19612195A1 (de) | 1996-11-28 |
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