JP4916890B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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Description
基板の周縁部を研磨すると共に基板の周縁部を測定することができる基板処理方法を提供することを本発明の第2の目的とする。
上記構成により、研磨される基板の周縁部の状態を測定ユニットで測定することができ、基板処理装置で研磨対象の基板の周縁部の状態を把握することが可能となる。
上記研磨ユニットは、基板のベベル部を研磨するベベル研磨部と、基板のノッチを研磨するノッチ研磨部を備えていることが好ましい。
上記方法により、研磨対象の基板の周縁部の測定をしてその状態を把握することが可能となる。また、測定ユニットによる測定結果を研磨ユニットによる研磨条件に反映することも可能となり、基板の周縁部の所望の研磨を行なうことが可能となる。
上記測定ユニットで、上記乾燥ユニットで乾燥した後の基板の周縁部の断面形状、表面状態または3次元形状を測定してもよい。
上記方法により、画像処理などの複雑な工程を伴わずに、簡単な手順で効率良く且つ正確に基板の周縁部の断面形状を測定することが可能となる。
上記方法により、画像処理などの複雑な工程を伴わずに、簡単な手順で効率良く且つ正確に基板の周縁部の断面形状を測定することが可能となる。
図2は、本発明の一実施形態にかかる基板処理装置の全体構成を示す概略平面図である。図2に示す基板処理装置1は、ウエハ供給回収装置11A,11Bを設置したロードアンロードポート10と、ウエハ周縁部の形状等の測定を行う測定ユニット30と、主にロードアンロードポート10と測定ユニット30及び下記の2次洗浄・乾燥ユニット110の間でウエハを搬送する第1搬送ロボット20Aと、ウエハ周縁部の研磨を行う第1研磨ユニット70A及び第2研磨ユニット70Bと、研磨後のウエハの洗浄を行う1次洗浄ユニット100と、1次洗浄されたウエハの2次洗浄及び乾燥を行う2次洗浄・乾燥ユニット110と、主に第1、第2研磨ユニット70A,70Bと1次洗浄ユニット100と2次洗浄・乾燥ユニット110の各ユニット間でウエハを搬送する第2搬送ロボット20Bを備えて構成されている。また、測定ユニット30によるウエハの測定結果に基づいて、第1、第2研磨ユニット70A,70Bにおける研磨条件を決定する研磨条件決定手段(図示せず)を備えている。研磨条件決定手段は、具体的にはコントローラの一部であり、ウエハ周縁部の測定結果に基づいてその研磨条件を算出する計算手段である。なおここでは、基板処理装置1内に設置された処理装置の組立体(モジュール)をユニットと称す。以下、基板処理装置1が備える各ユニットの構成、及び各ユニットにおける処理工程を詳細に説明する。
まず、図24を用いて、第1の処理パターンを説明する。図24において点線で示す矢印は、第1搬送ロボット20Aによる搬送ラインであり、実線で示す矢印は、第2搬送ロボット20Bによる搬送ラインである。CMP工程やCu成膜工程を終えたウエハが収容されたウエハカセット12A又は12Bがロードアンロードポート10のウエハ供給回収装置11A又は11Bに載置されると、第1搬送ロボット20Aによって、該ウエハカセット12A又は12Bからウエハが取り出されて測定ユニット30へ搬送される(搬送ライン1)。測定ユニット30で研磨前のウエハの周縁部の断面形状、表面状態または3次元形状のうち必要なデータが測定される。測定を終えたウエハは、第2搬送ロボット20Bによって測定ユニット30から第1研磨ユニット70Aへ搬送される(搬送ライン2)。第1研磨ユニット70Aでウエハの周縁部(ベベル部及びノッチ部)の研磨が行なわれる。第1研磨ユニット70Aでの研磨を終えたウエハは、第2搬送ロボット20Bによって1次洗浄ユニット100へ搬送され(搬送ライン3)、1次洗浄が行われる。1次洗浄ユニット100で洗浄されたウエハは、第2搬送ロボット20Bで2次洗浄・乾燥ユニット110へ搬送され(搬送ライン4)、2次洗浄・乾燥処理が行われる。乾燥処理を終えたウエハは、第1搬送ロボット20Aにより元のウエハカセット12A又は12Bに戻される(搬送ライン5)。あるいは、乾燥処理を終えたウエハは、第1又は第2搬送ロボット20A又は20Bのいずれかにより測定ユニット30又はウエハステージ65へ搬送された後、第1搬送ロボット20Aでウエハカセット12A又は12Bへ戻される。
Claims (8)
- 基板のベベル部を含む周縁部を研磨する研磨ユニットと、前記研磨ユニットで周縁部を研磨した後の基板を洗浄する洗浄ユニットと、前記洗浄ユニットで洗浄した後の基板を乾燥する乾燥ユニットと、基板のベベル部を含む周縁部の断面形状、表面状態または3次元形状の測定を行う測定ユニットとを備え、
前記研磨ユニットは、前記測定ユニットによる前記基板の周縁部の測定結果を基に決定される研磨角度で前記基板のベベル部を含む周縁部を研磨するように構成されていることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置において、
前記測定ユニットは、前記基板処理装置の内部に配置されていることを特徴とする基板処理装置。 - 請求項1または2に記載の基板処理装置において、
前記研磨ユニットは、基板のベベル部を研磨するベベル研磨部と、基板のノッチを研磨するノッチ研磨部を備えたことを特徴とする基板処理装置。 - 測定ユニットで、基板のベベル部を含む周縁部の断面形状、表面状態または3次元形状を測定し、
前記測定ユニットによる前記基板の周縁部の測定結果を基に決定される研磨角度で前記基板のベベル部を含む周縁部を研磨ユニットで研磨し、
前記研磨ユニットで周縁部を研磨した後の基板を洗浄ユニットで洗浄し、
前記洗浄ユニットで洗浄した後の基板を乾燥ユニットで乾燥することを特徴とする基板処理方法。 - 請求項4に記載の基板処理方法において、
前記測定ユニットで、前記乾燥ユニットで乾燥した後の基板の周縁部の断面形状、表面状態または3次元形状を測定することを特徴とする基板処理方法。 - 請求項4または5に記載の基板処理方法において、
基板の周縁部の第1の測定位置の第1の厚さ寸法を計測し、
基板の周縁部の第2の測定位置の第2の厚さ寸法を計測し、
前記第1の測定位置と前記第2の測定位置との間の距離を計測し、
前記第1の厚さ寸法、前記第2の厚さ寸法、および前記第1の測定位置と前記第2の測定位置との間の距離から基板の周縁部の断面形状を算出することを特徴とする基板処理方法。 - 請求項4または5に記載の基板処理方法において、
基板の周縁部に線状の光を照射して該周縁部の表面に線状の光の軌跡を形成し、
前記線状の光の軌跡に対して直交及び平行しない位置に設置した画像取得装置で前記光の軌跡の画像を取得し、
前記画像取得装置を設置した位置の座標を基に前記光の軌跡の位置の座標を演算処理することで、基板の周縁部の断面形状を座標化したデータを算出することを特徴とする基板処理方法。 - 請求項4に記載の基板処理方法において、
前記研磨角度は、基板のベベル部の傾斜部と側面部との境界部を研磨する時の角度を含むことを特徴とする基板処理方法。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023090052A1 (ja) * | 2021-11-18 | 2023-05-25 | 株式会社荏原製作所 | 基板処理方法および基板処理装置 |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006037267B4 (de) * | 2006-08-09 | 2010-12-09 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben mit hochpräzisem Kantenprofil |
JP5009101B2 (ja) * | 2006-10-06 | 2012-08-22 | 株式会社荏原製作所 | 基板研磨装置 |
US7976361B2 (en) * | 2007-06-29 | 2011-07-12 | Ebara Corporation | Polishing apparatus and polishing method |
US8734661B2 (en) * | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
JP5274993B2 (ja) | 2007-12-03 | 2013-08-28 | 株式会社荏原製作所 | 研磨装置 |
JP4388576B2 (ja) * | 2007-12-03 | 2009-12-24 | 株式会社コベルコ科研 | 形状測定装置 |
JP4316643B2 (ja) * | 2007-12-26 | 2009-08-19 | 株式会社コベルコ科研 | 形状測定装置,形状測定方法 |
JP2009245991A (ja) * | 2008-03-28 | 2009-10-22 | Tdk Corp | チップ部品の実装装置 |
WO2009133847A1 (ja) * | 2008-04-30 | 2009-11-05 | 株式会社ニコン | 観察装置および観察方法 |
JP5160993B2 (ja) | 2008-07-25 | 2013-03-13 | 株式会社荏原製作所 | 基板処理装置 |
US20100054901A1 (en) * | 2008-08-28 | 2010-03-04 | Hiwin Mikrosystem Corp. | Wafer alignment platform |
US7977123B2 (en) * | 2009-05-22 | 2011-07-12 | Lam Research Corporation | Arrangements and methods for improving bevel etch repeatability among substrates |
JP5325681B2 (ja) * | 2009-07-08 | 2013-10-23 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
KR101170760B1 (ko) * | 2009-07-24 | 2012-08-03 | 세메스 주식회사 | 기판 연마 장치 |
JP5622077B2 (ja) * | 2010-03-12 | 2014-11-12 | 日立金属株式会社 | 半導体基板の加工装置、及び半導体基板の製造方法 |
KR101829676B1 (ko) * | 2011-12-29 | 2018-02-20 | 삼성전자주식회사 | 웨이퍼 열 처리 방법 |
DE102012101301B4 (de) * | 2012-02-17 | 2014-11-06 | Kocos Automation Gmbh | Vorrichtung zur berührungslosen Kantenprofilbestimmung an einem dünnen scheibenförmigen Objekt |
KR101325093B1 (ko) | 2012-05-04 | 2013-11-06 | 송성석 | 연마판 가공 장치 |
CN103531495B (zh) * | 2012-07-04 | 2016-06-22 | 理想能源设备(上海)有限公司 | 半导体检测装置、半导体检测系统及检测衬底温度的方法 |
JP6099960B2 (ja) * | 2012-12-18 | 2017-03-22 | ダイトエレクトロン株式会社 | ウェーハの面取り加工方法およびウェーハの面取り装置 |
JP6140439B2 (ja) * | 2012-12-27 | 2017-05-31 | 株式会社荏原製作所 | 研磨装置、及び研磨方法 |
JP6128941B2 (ja) * | 2013-05-10 | 2017-05-17 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法及び半導体製造装置 |
KR101452250B1 (ko) * | 2013-05-28 | 2014-10-22 | 코닝정밀소재 주식회사 | 기판 대칭 면취 방법 및 장치 |
KR102090799B1 (ko) * | 2013-07-04 | 2020-03-18 | 주식회사 케이씨텍 | 수평 이송형 마스크 처리장비의 세정장치 |
US20150017745A1 (en) * | 2013-07-08 | 2015-01-15 | Ebara Corporation | Polishing method and polishing apparatus |
JP6007889B2 (ja) * | 2013-12-03 | 2016-10-19 | 信越半導体株式会社 | 面取り加工装置及びノッチレスウェーハの製造方法 |
KR101540569B1 (ko) * | 2013-12-24 | 2015-07-31 | 주식회사 엘지실트론 | 웨이퍼의 형상 분석 방법 및 장치 |
JP6223873B2 (ja) * | 2014-03-14 | 2017-11-01 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
JP6600470B2 (ja) * | 2014-04-01 | 2019-10-30 | 株式会社荏原製作所 | 洗浄装置及び洗浄方法 |
CN104971916B (zh) * | 2014-04-01 | 2020-07-07 | 株式会社荏原制作所 | 清洗装置及清洗方法 |
TWI574441B (zh) * | 2014-04-15 | 2017-03-11 | 聖約翰科技大學 | 可撓性發光二極體之連續加工裝置 |
US10196741B2 (en) * | 2014-06-27 | 2019-02-05 | Applied Materials, Inc. | Wafer placement and gap control optimization through in situ feedback |
SG10201906815XA (en) * | 2014-08-26 | 2019-08-27 | Ebara Corp | Substrate processing apparatus |
JP6045542B2 (ja) * | 2014-09-11 | 2016-12-14 | 信越半導体株式会社 | 半導体ウェーハの加工方法、貼り合わせウェーハの製造方法、及びエピタキシャルウェーハの製造方法 |
US10249518B2 (en) * | 2015-03-04 | 2019-04-02 | Toshiba Memory Corporation | Polishing device and polishing method |
JP6486757B2 (ja) * | 2015-04-23 | 2019-03-20 | 株式会社荏原製作所 | 基板処理装置 |
JP6461748B2 (ja) | 2015-08-25 | 2019-01-30 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6614978B2 (ja) * | 2016-01-14 | 2019-12-04 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
KR102618813B1 (ko) * | 2016-01-27 | 2023-12-27 | 삼성전자주식회사 | 공정 챔버 모니터링 장치 |
JP6444909B2 (ja) * | 2016-02-22 | 2018-12-26 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体 |
US9933314B2 (en) | 2016-06-30 | 2018-04-03 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor workpiece temperature measurement system |
KR101747083B1 (ko) | 2017-02-09 | 2017-06-16 | 씨엠티 주식회사 | 웨이퍼의 표면개질 자동검사시스템 |
JP6920849B2 (ja) * | 2017-03-27 | 2021-08-18 | 株式会社荏原製作所 | 基板処理方法および装置 |
JP7274009B2 (ja) * | 2017-08-15 | 2023-05-15 | 東京エレクトロン株式会社 | 基板処理装置 |
JP2019036634A (ja) * | 2017-08-15 | 2019-03-07 | 東京エレクトロン株式会社 | 基板処理装置 |
KR101971150B1 (ko) * | 2017-08-18 | 2019-04-22 | 에스케이실트론 주식회사 | 웨이퍼의 에지 연마부, 이를 포함하는 웨이퍼의 에지 연마 장치 및 방법 |
US11292101B2 (en) * | 2017-11-22 | 2022-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing apparatus and method |
JP6951705B2 (ja) * | 2018-03-16 | 2021-10-20 | 国立大学法人北海道大学 | 破壊型検査装置及び検査方法 |
US10978331B2 (en) * | 2018-03-30 | 2021-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for orientator based wafer defect sensing |
KR102518971B1 (ko) * | 2018-04-13 | 2023-04-05 | 가부시키가이샤 사무코 | 반도체 웨이퍼의 평가 방법 및 반도체 웨이퍼의 제조 방법 |
CN108857588A (zh) * | 2018-06-22 | 2018-11-23 | 中国建筑材料科学研究总院有限公司 | 抛光装置和抛光方法 |
JP7349240B2 (ja) * | 2018-10-05 | 2023-09-22 | 東京エレクトロン株式会社 | 基板倉庫及び基板検査方法 |
TWI705229B (zh) * | 2019-01-14 | 2020-09-21 | 亦立科技有限公司 | 晶圓厚度偵測裝置及其方法 |
JP7220648B2 (ja) * | 2019-12-20 | 2023-02-10 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
JP7387471B2 (ja) * | 2020-02-05 | 2023-11-28 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
JP7341918B2 (ja) | 2020-02-06 | 2023-09-11 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
KR20230004673A (ko) * | 2020-04-20 | 2023-01-06 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
JP7451324B2 (ja) * | 2020-06-26 | 2024-03-18 | 株式会社荏原製作所 | 基板処理装置および基板処理方法 |
CN117961787A (zh) * | 2024-03-26 | 2024-05-03 | 济南础润光电有限公司 | 一种工件圆弧面粗糙度加工设备 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3035690B2 (ja) * | 1994-01-27 | 2000-04-24 | 株式会社東京精密 | ウェーハ直径・断面形状測定装置及びそれを組み込んだウェーハ面取り機 |
JPH0976148A (ja) | 1995-09-12 | 1997-03-25 | Shin Etsu Handotai Co Ltd | ウェーハのノッチ部研磨装置 |
US6230753B1 (en) * | 1996-07-15 | 2001-05-15 | Lam Research Corporation | Wafer cleaning apparatus |
JPH1199453A (ja) * | 1997-09-30 | 1999-04-13 | Mitsubishi Materials Corp | ウェーハの面取り面研磨装置 |
JP2000084811A (ja) | 1998-09-16 | 2000-03-28 | Tokyo Seimitsu Co Ltd | ウェーハ面取り装置 |
CN1239969C (zh) * | 1999-06-22 | 2006-02-01 | 布鲁克斯自动化公司 | 用于微电子学器件生产的逐次运行控制器 |
US6355660B1 (en) * | 1999-07-20 | 2002-03-12 | Dow Agrosciences Llc | Fungicidal heterocyclic aromatic amides and their compositions, methods of use and preparation |
WO2001070457A1 (en) * | 2000-03-17 | 2001-09-27 | Wafer Solutions, Inc | Grind polish cluster and double side polishing of substrates |
US6722964B2 (en) * | 2000-04-04 | 2004-04-20 | Ebara Corporation | Polishing apparatus and method |
US6609950B2 (en) | 2000-07-05 | 2003-08-26 | Ebara Corporation | Method for polishing a substrate |
WO2002047139A2 (en) * | 2000-12-04 | 2002-06-13 | Ebara Corporation | Methode of forming a copper film on a substrate |
JP4156200B2 (ja) * | 2001-01-09 | 2008-09-24 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
JP3709426B2 (ja) * | 2001-11-02 | 2005-10-26 | 日本エレクトロセンサリデバイス株式会社 | 表面欠陥検出方法および表面欠陥検出装置 |
JP2003209075A (ja) * | 2002-01-15 | 2003-07-25 | Speedfam Co Ltd | ウェハエッジ研磨システム及びウェハエッジ研磨制御方法 |
JP4090247B2 (ja) * | 2002-02-12 | 2008-05-28 | 株式会社荏原製作所 | 基板処理装置 |
EP1487879B1 (en) * | 2002-03-01 | 2012-12-26 | Immunomedics, Inc. | Bispecific antibody point mutations for enhancing rate of clearance |
JP3956350B2 (ja) * | 2002-03-25 | 2007-08-08 | 東京エレクトロン株式会社 | 位置決め機能を有する基板処理装置及び位置決め機能を有する基板処理方法 |
JP4125148B2 (ja) * | 2003-02-03 | 2008-07-30 | 株式会社荏原製作所 | 基板処理装置 |
JP2005026526A (ja) * | 2003-07-03 | 2005-01-27 | Renesas Technology Corp | 半導体製造装置および半導体装置の製造方法 |
TWI352645B (en) * | 2004-05-28 | 2011-11-21 | Ebara Corp | Apparatus for inspecting and polishing substrate r |
US7150673B2 (en) * | 2004-07-09 | 2006-12-19 | Ebara Corporation | Method for estimating polishing profile or polishing amount, polishing method and polishing apparatus |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023090052A1 (ja) * | 2021-11-18 | 2023-05-25 | 株式会社荏原製作所 | 基板処理方法および基板処理装置 |
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