JP5188328B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5188328B2
JP5188328B2 JP2008220785A JP2008220785A JP5188328B2 JP 5188328 B2 JP5188328 B2 JP 5188328B2 JP 2008220785 A JP2008220785 A JP 2008220785A JP 2008220785 A JP2008220785 A JP 2008220785A JP 5188328 B2 JP5188328 B2 JP 5188328B2
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JP
Japan
Prior art keywords
memory
writing
condition
write
memory cells
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008220785A
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English (en)
Japanese (ja)
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JP2010055699A5 (enExample
JP2010055699A (ja
Inventor
元康 寺尾
悟 半澤
均 久米
穣 大串
佳孝 笹子
勝治 木下
則克 高浦
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Hitachi Ltd
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Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2008220785A priority Critical patent/JP5188328B2/ja
Priority to KR1020090041676A priority patent/KR101061694B1/ko
Priority to US12/469,778 priority patent/US7996735B2/en
Publication of JP2010055699A publication Critical patent/JP2010055699A/ja
Priority to KR1020110009100A priority patent/KR101025053B1/ko
Publication of JP2010055699A5 publication Critical patent/JP2010055699A5/ja
Priority to US13/191,442 priority patent/US8132063B2/en
Application granted granted Critical
Publication of JP5188328B2 publication Critical patent/JP5188328B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/022—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50008—Marginal testing, e.g. race, voltage or current testing of impedance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP2008220785A 2008-08-29 2008-08-29 半導体装置 Expired - Fee Related JP5188328B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008220785A JP5188328B2 (ja) 2008-08-29 2008-08-29 半導体装置
KR1020090041676A KR101061694B1 (ko) 2008-08-29 2009-05-13 반도체 장치
US12/469,778 US7996735B2 (en) 2008-08-29 2009-05-21 Semiconductor device
KR1020110009100A KR101025053B1 (ko) 2008-08-29 2011-01-28 반도체 장치
US13/191,442 US8132063B2 (en) 2008-08-29 2011-07-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008220785A JP5188328B2 (ja) 2008-08-29 2008-08-29 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013008897A Division JP5548789B2 (ja) 2013-01-22 2013-01-22 半導体装置

Publications (3)

Publication Number Publication Date
JP2010055699A JP2010055699A (ja) 2010-03-11
JP2010055699A5 JP2010055699A5 (enExample) 2011-06-23
JP5188328B2 true JP5188328B2 (ja) 2013-04-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008220785A Expired - Fee Related JP5188328B2 (ja) 2008-08-29 2008-08-29 半導体装置

Country Status (3)

Country Link
US (2) US7996735B2 (enExample)
JP (1) JP5188328B2 (enExample)
KR (2) KR101061694B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10985213B2 (en) 2019-05-29 2021-04-20 Samsung Electronics Co., Ltd. Nonvolatile memory device

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JP5063337B2 (ja) * 2007-12-27 2012-10-31 株式会社日立製作所 半導体装置
KR101678886B1 (ko) * 2009-11-25 2016-11-23 삼성전자주식회사 멀티-레벨 상변환 메모리 장치 및 그 구동 방법
CA2793922A1 (en) * 2010-04-26 2011-11-03 Mosaid Technologies Incorporated Write scheme in phase change memory
JP5367641B2 (ja) * 2010-06-03 2013-12-11 株式会社東芝 不揮発性半導体記憶装置
US9798654B2 (en) 2011-09-15 2017-10-24 International Business Machines Corporation Retention management for phase change memory lifetime improvement through application and hardware profile matching
KR102030330B1 (ko) * 2012-12-11 2019-10-10 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법
JP5989611B2 (ja) * 2013-02-05 2016-09-07 株式会社東芝 半導体記憶装置、及びそのデータ制御方法
US9047938B2 (en) * 2013-02-25 2015-06-02 International Business Machines Corporation Phase change memory management
US8934284B2 (en) * 2013-02-26 2015-01-13 Seagate Technology Llc Methods and apparatuses using a transfer function to predict resistance shifts and/or noise of resistance-based memory
KR102059865B1 (ko) 2013-08-06 2020-02-12 삼성전자주식회사 가변 저항 메모리 장치 및 그것을 포함하는 가변 저항 메모리 시스템
US9558791B2 (en) * 2013-12-05 2017-01-31 Taiwan Semiconductor Manufacturing Company Limited Three-dimensional static random access memory device structures
WO2015134359A1 (en) 2014-03-06 2015-09-11 The Procter & Gamble Company Three-dimensional substrates
WO2016072974A1 (en) 2014-11-04 2016-05-12 Hewlett Packard Enterprise Development Lp Memory array driver
JP6391172B2 (ja) 2015-09-10 2018-09-19 東芝メモリ株式会社 メモリシステム
CN109310532A (zh) 2016-07-01 2019-02-05 宝洁公司 具有改善的顶片干燥度的吸收制品
CN116705110A (zh) 2016-09-21 2023-09-05 合肥睿科微电子有限公司 存储装置的电子电路及方法
US10430085B2 (en) 2016-11-08 2019-10-01 Micron Technology, Inc. Memory operations on data
US10261876B2 (en) * 2016-11-08 2019-04-16 Micron Technology, Inc. Memory management
KR102646755B1 (ko) 2017-01-06 2024-03-11 삼성전자주식회사 저항 변화 물질을 포함하는 메모리 장치 및 그 구동 방법
KR102684082B1 (ko) 2017-01-13 2024-07-10 삼성전자주식회사 저항 변화 물질을 포함하는 메모리 장치 및 그 구동 방법
CN110753965B (zh) * 2017-06-23 2023-02-24 华为技术有限公司 存储器和写数据的方法
JP6612392B1 (ja) * 2018-06-08 2019-11-27 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10985213B2 (en) 2019-05-29 2021-04-20 Samsung Electronics Co., Ltd. Nonvolatile memory device

Also Published As

Publication number Publication date
KR101025053B1 (ko) 2011-03-25
US20100058127A1 (en) 2010-03-04
KR20110016980A (ko) 2011-02-18
US20110283039A1 (en) 2011-11-17
KR20100026960A (ko) 2010-03-10
JP2010055699A (ja) 2010-03-11
KR101061694B1 (ko) 2011-09-01
US8132063B2 (en) 2012-03-06
US7996735B2 (en) 2011-08-09

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