KR101061694B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101061694B1
KR101061694B1 KR1020090041676A KR20090041676A KR101061694B1 KR 101061694 B1 KR101061694 B1 KR 101061694B1 KR 1020090041676 A KR1020090041676 A KR 1020090041676A KR 20090041676 A KR20090041676 A KR 20090041676A KR 101061694 B1 KR101061694 B1 KR 101061694B1
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KR
South Korea
Prior art keywords
memory
test
write
condition
memory cells
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Expired - Fee Related
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KR1020090041676A
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English (en)
Korean (ko)
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KR20100026960A (ko
Inventor
모또야스 데라오
사또루 한자와
히또시 구메
미노루 오구시
요시따까 사사고
마사하루 기노시따
다까우라 노리까쯔
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가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20100026960A publication Critical patent/KR20100026960A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/022—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50008—Marginal testing, e.g. race, voltage or current testing of impedance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
KR1020090041676A 2008-08-29 2009-05-13 반도체 장치 Expired - Fee Related KR101061694B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008220785A JP5188328B2 (ja) 2008-08-29 2008-08-29 半導体装置
JPJP-P-2008-220785 2008-08-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110009100A Division KR101025053B1 (ko) 2008-08-29 2011-01-28 반도체 장치

Publications (2)

Publication Number Publication Date
KR20100026960A KR20100026960A (ko) 2010-03-10
KR101061694B1 true KR101061694B1 (ko) 2011-09-01

Family

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Family Applications (2)

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KR1020090041676A Expired - Fee Related KR101061694B1 (ko) 2008-08-29 2009-05-13 반도체 장치
KR1020110009100A Expired - Fee Related KR101025053B1 (ko) 2008-08-29 2011-01-28 반도체 장치

Family Applications After (1)

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KR1020110009100A Expired - Fee Related KR101025053B1 (ko) 2008-08-29 2011-01-28 반도체 장치

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US (2) US7996735B2 (enExample)
JP (1) JP5188328B2 (enExample)
KR (2) KR101061694B1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5063337B2 (ja) * 2007-12-27 2012-10-31 株式会社日立製作所 半導体装置
KR101678886B1 (ko) * 2009-11-25 2016-11-23 삼성전자주식회사 멀티-레벨 상변환 메모리 장치 및 그 구동 방법
CA2793922A1 (en) * 2010-04-26 2011-11-03 Mosaid Technologies Incorporated Write scheme in phase change memory
JP5367641B2 (ja) * 2010-06-03 2013-12-11 株式会社東芝 不揮発性半導体記憶装置
US9798654B2 (en) 2011-09-15 2017-10-24 International Business Machines Corporation Retention management for phase change memory lifetime improvement through application and hardware profile matching
KR102030330B1 (ko) * 2012-12-11 2019-10-10 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법
JP5989611B2 (ja) * 2013-02-05 2016-09-07 株式会社東芝 半導体記憶装置、及びそのデータ制御方法
US9047938B2 (en) * 2013-02-25 2015-06-02 International Business Machines Corporation Phase change memory management
US8934284B2 (en) * 2013-02-26 2015-01-13 Seagate Technology Llc Methods and apparatuses using a transfer function to predict resistance shifts and/or noise of resistance-based memory
KR102059865B1 (ko) 2013-08-06 2020-02-12 삼성전자주식회사 가변 저항 메모리 장치 및 그것을 포함하는 가변 저항 메모리 시스템
US9558791B2 (en) * 2013-12-05 2017-01-31 Taiwan Semiconductor Manufacturing Company Limited Three-dimensional static random access memory device structures
WO2015134359A1 (en) 2014-03-06 2015-09-11 The Procter & Gamble Company Three-dimensional substrates
WO2016072974A1 (en) 2014-11-04 2016-05-12 Hewlett Packard Enterprise Development Lp Memory array driver
JP6391172B2 (ja) 2015-09-10 2018-09-19 東芝メモリ株式会社 メモリシステム
CN109310532A (zh) 2016-07-01 2019-02-05 宝洁公司 具有改善的顶片干燥度的吸收制品
CN116705110A (zh) 2016-09-21 2023-09-05 合肥睿科微电子有限公司 存储装置的电子电路及方法
US10430085B2 (en) 2016-11-08 2019-10-01 Micron Technology, Inc. Memory operations on data
US10261876B2 (en) * 2016-11-08 2019-04-16 Micron Technology, Inc. Memory management
KR102646755B1 (ko) 2017-01-06 2024-03-11 삼성전자주식회사 저항 변화 물질을 포함하는 메모리 장치 및 그 구동 방법
KR102684082B1 (ko) 2017-01-13 2024-07-10 삼성전자주식회사 저항 변화 물질을 포함하는 메모리 장치 및 그 구동 방법
CN110753965B (zh) * 2017-06-23 2023-02-24 华为技术有限公司 存储器和写数据的方法
JP6612392B1 (ja) * 2018-06-08 2019-11-27 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
KR102675350B1 (ko) 2019-05-29 2024-06-17 삼성전자주식회사 불휘발성 메모리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11243125A (ja) 1998-02-25 1999-09-07 Yokogawa Electric Corp Ｉｃテストシステム
JP2000132996A (ja) 1998-10-27 2000-05-12 Sony Corp 半導体記憶装置の不良品選別方法および不良品選別装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0498342A (ja) * 1990-08-09 1992-03-31 Mitsubishi Electric Corp 半導体記憶装置
US5254382A (en) 1990-11-29 1993-10-19 Fuji Xerox Co., Ltd. Optical recording medium
US5883827A (en) 1996-08-26 1999-03-16 Micron Technology, Inc. Method and apparatus for reading/writing data in a memory system including programmable resistors
US6513135B2 (en) * 2000-08-02 2003-01-28 Hitachi, Ltd. Automatic read reassignment method and a magnetic disk drive
JP4157264B2 (ja) 2000-09-27 2008-10-01 株式会社リコー 不揮発性メモリ及び不揮発性メモリの記録再生装置
KR100406555B1 (ko) 2001-06-29 2003-11-20 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 테스트 방법
US7782731B2 (en) * 2001-07-23 2010-08-24 Joseph Reid Henrichs Optical hard disk drive having a phase-change microhead array chip
JP4911845B2 (ja) 2001-09-20 2012-04-04 株式会社リコー 相変化型不揮発性メモリ素子、該相変化型不揮発性メモリ素子を用いたメモリアレーおよび該相変化型不揮発性メモリ素子の情報記録方法
JP4100892B2 (ja) * 2001-10-05 2008-06-11 キヤノン株式会社 不揮発磁気薄膜メモリ装置
US6606262B2 (en) * 2002-01-10 2003-08-12 Hewlett-Packard Development Company, L.P. Magnetoresistive random access memory (MRAM) with on-chip automatic determination of optimized write current method and apparatus
US6791865B2 (en) * 2002-09-03 2004-09-14 Hewlett-Packard Development Company, L.P. Memory device capable of calibration and calibration methods therefor
JP2005050424A (ja) 2003-07-28 2005-02-24 Renesas Technology Corp 抵抗値変化型記憶装置
US7075140B2 (en) * 2003-11-26 2006-07-11 Gregorio Spadea Low voltage EEPROM memory arrays
KR100558548B1 (ko) * 2003-11-27 2006-03-10 삼성전자주식회사 상변화 메모리 소자에서의 라이트 드라이버 회로 및라이트 전류 인가방법
EP1712367B1 (en) * 2004-02-05 2011-03-09 Ricoh Company, Ltd. Phase-change information recording medium, process for producing the same and sputtering target.
JP4669518B2 (ja) * 2005-09-21 2011-04-13 ルネサスエレクトロニクス株式会社 半導体装置
KR100763908B1 (ko) * 2006-01-05 2007-10-05 삼성전자주식회사 상전이 물질, 이를 포함하는 상전이 메모리와 이의 동작방법
JP2007293949A (ja) * 2006-04-21 2007-11-08 Toshiba Corp 光記録媒体、情報記録再生装置及び方法
JP4524684B2 (ja) * 2006-11-21 2010-08-18 エルピーダメモリ株式会社 メモリ読み出し回路及び方式
KR101177284B1 (ko) * 2007-01-18 2012-08-24 삼성전자주식회사 상변화 물질층과 그 제조방법과 이 방법으로 형성된 상변화물질층을 포함하는 상변화 메모리 소자와 그 제조 및 동작방법
US20090287957A1 (en) * 2008-05-16 2009-11-19 Christoph Bilger Method for controlling a memory module and memory control unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11243125A (ja) 1998-02-25 1999-09-07 Yokogawa Electric Corp Ｉｃテストシステム
JP2000132996A (ja) 1998-10-27 2000-05-12 Sony Corp 半導体記憶装置の不良品選別方法および不良品選別装置

Also Published As

Publication number Publication date
KR101025053B1 (ko) 2011-03-25
US20100058127A1 (en) 2010-03-04
KR20110016980A (ko) 2011-02-18
US20110283039A1 (en) 2011-11-17
KR20100026960A (ko) 2010-03-10
JP2010055699A (ja) 2010-03-11
JP5188328B2 (ja) 2013-04-24
US8132063B2 (en) 2012-03-06
US7996735B2 (en) 2011-08-09

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