JP5181538B2 - 圧電体及び圧電素子 - Google Patents

圧電体及び圧電素子 Download PDF

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Publication number
JP5181538B2
JP5181538B2 JP2007150687A JP2007150687A JP5181538B2 JP 5181538 B2 JP5181538 B2 JP 5181538B2 JP 2007150687 A JP2007150687 A JP 2007150687A JP 2007150687 A JP2007150687 A JP 2007150687A JP 5181538 B2 JP5181538 B2 JP 5181538B2
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Japan
Prior art keywords
substrate
piezoelectric
film
crystal
axis
Prior art date
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Expired - Fee Related
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JP2007150687A
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English (en)
Japanese (ja)
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JP2008305916A (ja
JP2008305916A5 (enExample
Inventor
史人 岡
憲治 柴田
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP2007150687A priority Critical patent/JP5181538B2/ja
Priority to US11/873,081 priority patent/US7701121B2/en
Publication of JP2008305916A publication Critical patent/JP2008305916A/ja
Publication of JP2008305916A5 publication Critical patent/JP2008305916A5/ja
Application granted granted Critical
Publication of JP5181538B2 publication Critical patent/JP5181538B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Gyroscopes (AREA)
JP2007150687A 2007-06-06 2007-06-06 圧電体及び圧電素子 Expired - Fee Related JP5181538B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007150687A JP5181538B2 (ja) 2007-06-06 2007-06-06 圧電体及び圧電素子
US11/873,081 US7701121B2 (en) 2007-06-06 2007-10-16 Piezoelectric substance and piezoelectric element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007150687A JP5181538B2 (ja) 2007-06-06 2007-06-06 圧電体及び圧電素子

Publications (3)

Publication Number Publication Date
JP2008305916A JP2008305916A (ja) 2008-12-18
JP2008305916A5 JP2008305916A5 (enExample) 2010-04-08
JP5181538B2 true JP5181538B2 (ja) 2013-04-10

Family

ID=40095215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007150687A Expired - Fee Related JP5181538B2 (ja) 2007-06-06 2007-06-06 圧電体及び圧電素子

Country Status (2)

Country Link
US (1) US7701121B2 (enExample)
JP (1) JP5181538B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159807A (ja) * 2006-12-22 2008-07-10 Hitachi Cable Ltd 圧電薄膜素子及び圧電薄膜素子を用いて製造したアクチュエータとセンサ
JP5391395B2 (ja) * 2007-10-15 2014-01-15 日立金属株式会社 圧電薄膜付き基板及び圧電素子
JP5267082B2 (ja) * 2008-01-24 2013-08-21 日立電線株式会社 圧電薄膜素子及びそれを用いたセンサ並びにアクチュエータ
JP5272687B2 (ja) * 2008-01-24 2013-08-28 日立電線株式会社 圧電薄膜素子、それを用いたセンサ及びアクチュエータ
JP5525143B2 (ja) * 2008-06-05 2014-06-18 日立金属株式会社 圧電薄膜素子及び圧電薄膜デバイス
JP5035374B2 (ja) * 2009-06-10 2012-09-26 日立電線株式会社 圧電薄膜素子及びそれを備えた圧電薄膜デバイス
JP5035378B2 (ja) * 2009-06-22 2012-09-26 日立電線株式会社 圧電薄膜素子及びその製造方法、並びに圧電薄膜デバイス
JP5471612B2 (ja) * 2009-06-22 2014-04-16 日立金属株式会社 圧電性薄膜素子の製造方法及び圧電薄膜デバイスの製造方法
JP5434563B2 (ja) * 2009-12-18 2014-03-05 日立金属株式会社 圧電体薄膜付き基板の製造方法
CN102823007B (zh) * 2010-03-29 2014-04-09 日立金属株式会社 压电薄膜器件及其制造方法以及压电薄膜装置
JP5808262B2 (ja) * 2012-01-23 2015-11-10 株式会社サイオクス 圧電体素子及び圧電体デバイス
US9837596B2 (en) 2014-06-13 2017-12-05 Tdk Corporation Piezoelectric device, piezoelectric actuator, piezoelectric sensor, hard disk drive, and inkjet printer apparatus
JP6690193B2 (ja) * 2014-11-12 2020-04-28 Tdk株式会社 圧電体層、圧電素子、圧電アクチュエータ、及び圧電センサ、並びにハードディスクドライブ、及びインクジェットプリンタ装置
JP6610856B2 (ja) 2015-03-20 2019-11-27 セイコーエプソン株式会社 圧電素子及び圧電素子応用デバイス並びに圧電素子の製造方法
JP6558526B2 (ja) 2015-03-27 2019-08-14 セイコーエプソン株式会社 圧電素子及び圧電素子応用デバイス並びに圧電素子の製造方法
JP2016189372A (ja) * 2015-03-30 2016-11-04 セイコーエプソン株式会社 圧電駆動装置、ロボット及びポンプ
JP6239566B2 (ja) 2015-10-16 2017-11-29 株式会社サイオクス 圧電薄膜付き積層基板、圧電薄膜素子およびその製造方法
JP7102243B2 (ja) * 2018-06-20 2022-07-19 キヤノン株式会社 配向性圧電体膜、およびその製造方法、並びに、液体吐出ヘッド
US11594668B2 (en) 2018-12-28 2023-02-28 Tdk Corporation Thin film laminate, thin film device and multilayer substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10215008A (ja) * 1997-01-30 1998-08-11 Seiko Epson Corp 圧電体セラミックス薄膜デバイス
JP2002151754A (ja) 2000-11-15 2002-05-24 Mitsubishi Electric Corp 圧電体薄膜素子及びその製造方法
JP4072689B2 (ja) * 2004-03-12 2008-04-09 セイコーエプソン株式会社 ニオブ酸カリウム堆積体およびその製造方法、表面弾性波素子、周波数フィルタ、周波数発振器、電子回路、ならびに電子機器
JP4078555B2 (ja) * 2004-03-17 2008-04-23 セイコーエプソン株式会社 ニオブ酸カリウム堆積体の製造方法
JP2007019302A (ja) * 2005-07-08 2007-01-25 Hitachi Cable Ltd 圧電薄膜素子及びそれを用いたアクチュエータ並びにセンサ
JP5044902B2 (ja) * 2005-08-01 2012-10-10 日立電線株式会社 圧電薄膜素子
JP4258530B2 (ja) * 2006-06-05 2009-04-30 日立電線株式会社 圧電薄膜素子
JP4595889B2 (ja) * 2006-06-05 2010-12-08 日立電線株式会社 圧電薄膜素子の製造方法
US7956518B2 (en) * 2007-10-03 2011-06-07 Ngk Insulators, Ltd. Piezoelectric/electrostrictive ceramic composition and piezoelectric/electrostrictive device

Also Published As

Publication number Publication date
JP2008305916A (ja) 2008-12-18
US7701121B2 (en) 2010-04-20
US20080303377A1 (en) 2008-12-11

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