JP5181487B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5181487B2
JP5181487B2 JP2007028679A JP2007028679A JP5181487B2 JP 5181487 B2 JP5181487 B2 JP 5181487B2 JP 2007028679 A JP2007028679 A JP 2007028679A JP 2007028679 A JP2007028679 A JP 2007028679A JP 5181487 B2 JP5181487 B2 JP 5181487B2
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JP
Japan
Prior art keywords
molecule
semiconductor
electrode
conductor
molecules
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Expired - Fee Related
Application number
JP2007028679A
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English (en)
Japanese (ja)
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JP2008193009A (ja
JP2008193009A5 (enExample
Inventor
大介 保原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2007028679A priority Critical patent/JP5181487B2/ja
Priority to US12/023,975 priority patent/US8120018B2/en
Priority to CN2008100062553A priority patent/CN101257091B/zh
Publication of JP2008193009A publication Critical patent/JP2008193009A/ja
Publication of JP2008193009A5 publication Critical patent/JP2008193009A5/ja
Application granted granted Critical
Publication of JP5181487B2 publication Critical patent/JP5181487B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2007028679A 2007-02-08 2007-02-08 半導体装置 Expired - Fee Related JP5181487B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007028679A JP5181487B2 (ja) 2007-02-08 2007-02-08 半導体装置
US12/023,975 US8120018B2 (en) 2007-02-08 2008-01-31 Semiconductor device comprising semiconductor molecules and a conductor formed of fine particles and linker molecules
CN2008100062553A CN101257091B (zh) 2007-02-08 2008-02-04 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007028679A JP5181487B2 (ja) 2007-02-08 2007-02-08 半導体装置

Publications (3)

Publication Number Publication Date
JP2008193009A JP2008193009A (ja) 2008-08-21
JP2008193009A5 JP2008193009A5 (enExample) 2010-03-04
JP5181487B2 true JP5181487B2 (ja) 2013-04-10

Family

ID=39685062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007028679A Expired - Fee Related JP5181487B2 (ja) 2007-02-08 2007-02-08 半導体装置

Country Status (3)

Country Link
US (1) US8120018B2 (enExample)
JP (1) JP5181487B2 (enExample)
CN (1) CN101257091B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5151122B2 (ja) * 2006-11-22 2013-02-27 ソニー株式会社 電極被覆材料、電極構造体、及び、半導体装置
EP2180539A1 (en) * 2008-10-21 2010-04-28 Commissariat à l'Energie Atomique Novel materials and their use for the electrocatalytic evolution or uptake of H2
JP2010131700A (ja) * 2008-12-04 2010-06-17 Sony Corp 微粒子構造体／基体複合部材及びその製造方法
TWI591801B (zh) * 2012-02-28 2017-07-11 國立研究開發法人科學技術振興機構 奈米裝置、積體電路及奈米裝置的製造方法
US10294332B2 (en) 2014-12-30 2019-05-21 Momentive Performance Materials Inc. Functionalized siloxane materials
EP3240823A4 (en) 2014-12-30 2018-08-01 Momentive Performance Materials Inc. Siloxane coordination polymers
JP7200028B2 (ja) * 2019-03-29 2023-01-06 住友化学株式会社 温度センサ素子
CN116761439B (zh) * 2023-08-23 2023-11-14 江苏集创原子团簇科技研究院有限公司 一种原子级团簇存算器件及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002226477A (ja) * 2001-02-05 2002-08-14 Mitsuboshi Belting Ltd フォトクロミック化合物
AUPR725601A0 (en) * 2001-08-24 2001-09-20 Commonwealth Scientific And Industrial Research Organisation Strain gauges
JP4736324B2 (ja) * 2002-04-22 2011-07-27 コニカミノルタホールディングス株式会社 半導体素子及びその製造方法
JP4635410B2 (ja) * 2002-07-02 2011-02-23 ソニー株式会社 半導体装置及びその製造方法
JP4252265B2 (ja) * 2002-07-31 2009-04-08 独立行政法人科学技術振興機構 分子ワイヤ
JP2004172270A (ja) * 2002-11-19 2004-06-17 Sony Corp 内包フラーレンによる分子及び薄膜トランジスタ
JP4214223B2 (ja) * 2003-06-17 2009-01-28 独立行政法人産業技術総合研究所 三端子素子の分子トランジスタ
JP4622424B2 (ja) * 2004-09-29 2011-02-02 ソニー株式会社 絶縁ゲート型電界効果トランジスタの製造方法
JP2006147909A (ja) * 2004-11-22 2006-06-08 Sony Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20080191202A1 (en) 2008-08-14
JP2008193009A (ja) 2008-08-21
CN101257091A (zh) 2008-09-03
US8120018B2 (en) 2012-02-21
CN101257091B (zh) 2012-04-25

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