CN101257091B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN101257091B
CN101257091B CN2008100062553A CN200810006255A CN101257091B CN 101257091 B CN101257091 B CN 101257091B CN 2008100062553 A CN2008100062553 A CN 2008100062553A CN 200810006255 A CN200810006255 A CN 200810006255A CN 101257091 B CN101257091 B CN 101257091B
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molecule
electrode
semiconductor
conductor
molecules
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Expired - Fee Related
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CN2008100062553A
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CN101257091A (zh
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保原大介
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
CN2008100062553A 2007-02-08 2008-02-04 半导体装置及其制造方法 Expired - Fee Related CN101257091B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007028679A JP5181487B2 (ja) 2007-02-08 2007-02-08 半導体装置
JP2007-028679 2007-02-08
JP2007028679 2007-02-08

Publications (2)

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CN101257091A CN101257091A (zh) 2008-09-03
CN101257091B true CN101257091B (zh) 2012-04-25

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CN2008100062553A Expired - Fee Related CN101257091B (zh) 2007-02-08 2008-02-04 半导体装置及其制造方法

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US (1) US8120018B2 (enExample)
JP (1) JP5181487B2 (enExample)
CN (1) CN101257091B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5151122B2 (ja) * 2006-11-22 2013-02-27 ソニー株式会社 電極被覆材料、電極構造体、及び、半導体装置
EP2180539A1 (en) * 2008-10-21 2010-04-28 Commissariat à l'Energie Atomique Novel materials and their use for the electrocatalytic evolution or uptake of H2
JP2010131700A (ja) * 2008-12-04 2010-06-17 Sony Corp 微粒子構造体／基体複合部材及びその製造方法
TWI591801B (zh) * 2012-02-28 2017-07-11 國立研究開發法人科學技術振興機構 奈米裝置、積體電路及奈米裝置的製造方法
US10294332B2 (en) 2014-12-30 2019-05-21 Momentive Performance Materials Inc. Functionalized siloxane materials
EP3240823A4 (en) 2014-12-30 2018-08-01 Momentive Performance Materials Inc. Siloxane coordination polymers
JP7200028B2 (ja) * 2019-03-29 2023-01-06 住友化学株式会社 温度センサ素子
CN116761439B (zh) * 2023-08-23 2023-11-14 江苏集创原子团簇科技研究院有限公司 一种原子级团簇存算器件及其制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1783530A (zh) * 2004-09-29 2006-06-07 索尼株式会社 半导体器件及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002226477A (ja) * 2001-02-05 2002-08-14 Mitsuboshi Belting Ltd フォトクロミック化合物
AUPR725601A0 (en) * 2001-08-24 2001-09-20 Commonwealth Scientific And Industrial Research Organisation Strain gauges
JP4736324B2 (ja) * 2002-04-22 2011-07-27 コニカミノルタホールディングス株式会社 半導体素子及びその製造方法
JP4635410B2 (ja) * 2002-07-02 2011-02-23 ソニー株式会社 半導体装置及びその製造方法
JP4252265B2 (ja) * 2002-07-31 2009-04-08 独立行政法人科学技術振興機構 分子ワイヤ
JP2004172270A (ja) * 2002-11-19 2004-06-17 Sony Corp 内包フラーレンによる分子及び薄膜トランジスタ
JP4214223B2 (ja) * 2003-06-17 2009-01-28 独立行政法人産業技術総合研究所 三端子素子の分子トランジスタ
JP2006147909A (ja) * 2004-11-22 2006-06-08 Sony Corp 半導体装置及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1783530A (zh) * 2004-09-29 2006-06-07 索尼株式会社 半导体器件及其制造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2003-301116A 2003.10.21
JP特开2004-88090A 2004.03.18

Also Published As

Publication number Publication date
JP5181487B2 (ja) 2013-04-10
US20080191202A1 (en) 2008-08-14
JP2008193009A (ja) 2008-08-21
CN101257091A (zh) 2008-09-03
US8120018B2 (en) 2012-02-21

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