JP5158619B2 - 自己組織化単分子層を含む電子デバイス - Google Patents
自己組織化単分子層を含む電子デバイス Download PDFInfo
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Description
図1は、分子層10を示し、図2〜4は、自己組織化単分子層に隣接して配置された導電性基板を有しないデバイス150、160、170を示す。
分子層における分子は、導電性(例えば金属)基板の表面の上にまたはこれに近接して付着させる(例えば化学的に結合させるかまたは吸収させる)。基板は、テンプレートであり、この上に分子層を組織化して整然とした構造を形成する。更に、基板(例えば近接金属表面)は、π系の電気的特性を改善し、ゲート電界による優れた導電および変調に役立つようにバンドを変更するという証拠がある。
SAMのπ系は、化学基またはバッファ層を用いて、基板から電気的に絶縁することができる。例えば、移動のバリアを形成するために、チオール基が知られている(M. A. Reed等、「Conductanceof a Molecular Junction」、Science278,252(1997年)、M. Diventra等、「First-Principles Calculation of Transport Properties of a MolecularDevice」、Phys.Rev.Lett.84,979(2000年))。かかるバリアは、π電子を更に閉じ込め、基板(例えば金(金属)基板)から導電チャネルを分離するのに役立てることができる。この閉じ込めは、短チャネル挙動を軽減させ、コンタクト・バリアを介した電荷注入を改善するように作用することができる。
図7〜12は、本発明によるSAMFETの例を示す。例えば、これらの図に示すように、SAMFETは、分子π層(例えばSAM層)の上面または側面に接触するソース電極およびドレイン電極(例えば金属コンタクト)を含むことができる。構造のゲート制御を向上させるように、分子π層(例えばSAM膜)のほとんどを、ゲート電界にさらさなければならない(例えばゲート電極に近接させる)。
上述の構造(例えば図7〜12に示したような)では、誘電体層によってソースおよびドレイン領域からゲート電極を分離することができる。更に、SAM層によって配置された面に対して垂直に電界を印加することができる。例えば、誘電体層は、酸化シリコン、金属酸化物、有機膜、または他の誘電体層材料から成るものとすることができる。ゲートの幾何学的形状は、分子層において有効な伝導の変調が行われるように選択しなければならない。
図16に示すように、本発明は、自己組織化単分子層(SAMFET)を含む電子デバイス(例えば電界効果トランジスタ)を製造する発明の方法1100も含む。本発明の方法1100は、ソース領域およびドレイン領域を形成するステップ(1110)と、ソース領域およびドレイン領域に隣接して、少なくとも1つの共役分子を含む自己組織化単分子層を形成するステップ(1120)と、自己組織化単分子層に隣接して導電性基板を形成するステップ(1130)と、を含む。
Claims (1)
- 自己組織化単分子層を含む電子デバイスであって、
ソース領域およびドレイン領域と、
前記ソース領域および前記ドレイン領域に隣接して配置され、共役分子、ヘッド末端官能基、及びテイル末端官能基を含む自己組織化単分子層と、
前記自己組織化単分子層上に配置された誘電体層と、
前記誘電体層上に配置されたゲートと、
を含み、
前記ソース領域および前記ドレイン領域の一方が、前記自己組織化単分子層の上部の一部、及び一方の側面に配置されており、
前記ソース領域および前記ドレイン領域の他方が、前記自己組織化単分子層の他方の側面、下部、及び前記ソース領域および前記ドレイン領域の一方の下部に配置され、
前記ソースおよびドレイン領域の一方の下部と、前記ソースおよびドレイン領域の他方との間には、前記ヘッド末端官能基が配置され、
前記自己組織化単分子層がチャネル層を含み、前記自己組織化単分子層内に注入されたキャリアが、前記自己組織化単分子層によって配される面に沿って伝搬する、
自己組織化単分子層を含む電子デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/392,983 | 2003-03-21 | ||
US10/392,983 US7132678B2 (en) | 2003-03-21 | 2003-03-21 | Electronic device including a self-assembled monolayer, and a method of fabricating the same |
PCT/US2004/008402 WO2004086458A2 (en) | 2003-03-21 | 2004-03-19 | Electronic device including a self-assembled monolayer, and a method of fabricating the same |
Publications (2)
Publication Number | Publication Date |
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JP2007524989A JP2007524989A (ja) | 2007-08-30 |
JP5158619B2 true JP5158619B2 (ja) | 2013-03-06 |
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JP2006507352A Expired - Fee Related JP5158619B2 (ja) | 2003-03-21 | 2004-03-19 | 自己組織化単分子層を含む電子デバイス |
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Country | Link |
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US (1) | US7132678B2 (ja) |
EP (1) | EP1609173A4 (ja) |
JP (1) | JP5158619B2 (ja) |
KR (1) | KR100737293B1 (ja) |
CN (1) | CN100492657C (ja) |
IL (1) | IL170838A (ja) |
TW (1) | TWI269350B (ja) |
WO (1) | WO2004086458A2 (ja) |
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TW200511365A (en) | 2005-03-16 |
TWI269350B (en) | 2006-12-21 |
EP1609173A2 (en) | 2005-12-28 |
JP2007524989A (ja) | 2007-08-30 |
US7132678B2 (en) | 2006-11-07 |
IL170838A (en) | 2010-04-15 |
WO2004086458A3 (en) | 2007-04-12 |
CN100492657C (zh) | 2009-05-27 |
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US20040185600A1 (en) | 2004-09-23 |
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