JP5179455B2 - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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Publication number
JP5179455B2
JP5179455B2 JP2009246096A JP2009246096A JP5179455B2 JP 5179455 B2 JP5179455 B2 JP 5179455B2 JP 2009246096 A JP2009246096 A JP 2009246096A JP 2009246096 A JP2009246096 A JP 2009246096A JP 5179455 B2 JP5179455 B2 JP 5179455B2
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JP
Japan
Prior art keywords
etching
silicon carbide
carbide substrate
temperature
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009246096A
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English (en)
Japanese (ja)
Other versions
JP2011096700A (ja
JP2011096700A5 (OSRAM
Inventor
明光 大石
彰一 村上
晶保 畑下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPP Technologies Co Ltd
Original Assignee
SPP Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2009246096A priority Critical patent/JP5179455B2/ja
Application filed by SPP Technologies Co Ltd filed Critical SPP Technologies Co Ltd
Priority to US13/318,279 priority patent/US8673781B2/en
Priority to EP10826431.8A priority patent/EP2495757B1/en
Priority to PCT/JP2010/065203 priority patent/WO2011052296A1/ja
Priority to KR1020117023438A priority patent/KR101861709B1/ko
Priority to CN2010800266927A priority patent/CN102473630A/zh
Publication of JP2011096700A publication Critical patent/JP2011096700A/ja
Publication of JP2011096700A5 publication Critical patent/JP2011096700A5/ja
Application granted granted Critical
Publication of JP5179455B2 publication Critical patent/JP5179455B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP2009246096A 2009-10-27 2009-10-27 プラズマエッチング方法 Active JP5179455B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009246096A JP5179455B2 (ja) 2009-10-27 2009-10-27 プラズマエッチング方法
EP10826431.8A EP2495757B1 (en) 2009-10-27 2010-09-06 Plasma etching method
PCT/JP2010/065203 WO2011052296A1 (ja) 2009-10-27 2010-09-06 プラズマエッチング方法
KR1020117023438A KR101861709B1 (ko) 2009-10-27 2010-09-06 플라즈마 식각 방법
US13/318,279 US8673781B2 (en) 2009-10-27 2010-09-06 Plasma etching method
CN2010800266927A CN102473630A (zh) 2009-10-27 2010-09-06 等离子蚀刻法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009246096A JP5179455B2 (ja) 2009-10-27 2009-10-27 プラズマエッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011273076A Division JP2012054616A (ja) 2011-12-14 2011-12-14 プラズマエッチング方法

Publications (3)

Publication Number Publication Date
JP2011096700A JP2011096700A (ja) 2011-05-12
JP2011096700A5 JP2011096700A5 (OSRAM) 2011-11-04
JP5179455B2 true JP5179455B2 (ja) 2013-04-10

Family

ID=43921726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009246096A Active JP5179455B2 (ja) 2009-10-27 2009-10-27 プラズマエッチング方法

Country Status (6)

Country Link
US (1) US8673781B2 (OSRAM)
EP (1) EP2495757B1 (OSRAM)
JP (1) JP5179455B2 (OSRAM)
KR (1) KR101861709B1 (OSRAM)
CN (1) CN102473630A (OSRAM)
WO (1) WO2011052296A1 (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934709B1 (fr) * 2008-08-01 2010-09-10 Commissariat Energie Atomique Structure d'echange thermique et dispositif de refroidissement comportant une telle structure.
WO2012008179A1 (ja) * 2010-07-12 2012-01-19 住友精密工業株式会社 エッチング方法
JP5658110B2 (ja) * 2011-08-29 2015-01-21 パナソニックＩｐマネジメント株式会社 ドライエッチング方法
US9123542B2 (en) 2011-09-05 2015-09-01 Spp Technologies Co., Ltd. Plasma etching method
JP5877982B2 (ja) * 2011-09-22 2016-03-08 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング方法
JP5888027B2 (ja) * 2012-03-14 2016-03-16 富士通株式会社 半導体装置の製造方法
US20140342569A1 (en) * 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
JP5874687B2 (ja) * 2013-05-31 2016-03-02 豊田合成株式会社 半導体素装置の製造方法
JP2017005177A (ja) * 2015-06-12 2017-01-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105441B2 (ja) * 1992-11-30 1995-11-13 日本電気株式会社 半導体装置の製造方法
JPH088232A (ja) * 1994-06-22 1996-01-12 Sony Corp プラズマ処理方法
US5571374A (en) * 1995-10-02 1996-11-05 Motorola Method of etching silicon carbide
JPH10303185A (ja) 1997-04-26 1998-11-13 Anelva Corp エッチング装置及びエッチング方法
JPH11162958A (ja) * 1997-09-16 1999-06-18 Tokyo Electron Ltd プラズマ処理装置及びその方法
JP2001144075A (ja) 1999-11-15 2001-05-25 Matsushita Electric Ind Co Ltd プラズマ処理装置
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US6670278B2 (en) * 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
JP2003069154A (ja) * 2001-06-11 2003-03-07 Sharp Corp 半導体レーザ素子およびその製造方法
JP2003273084A (ja) * 2002-03-15 2003-09-26 Seiko Epson Corp 大気圧プラズマ装置、大気圧プラズマ処理方法及びデバイス並びにデバイス製造方法
JP4030982B2 (ja) 2004-05-10 2008-01-09 ユーディナデバイス株式会社 半導体装置および半導体装置の製造方法
US7465670B2 (en) * 2005-03-28 2008-12-16 Tokyo Electron Limited Plasma etching method, plasma etching apparatus, control program and computer storage medium with enhanced selectivity
JP4859474B2 (ja) * 2006-02-15 2012-01-25 三菱重工業株式会社 プラズマ処理方法、及び、プラズマ処理装置
JP4516538B2 (ja) 2006-03-01 2010-08-04 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP5135885B2 (ja) 2007-05-24 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
JP5072082B2 (ja) * 2007-09-07 2012-11-14 株式会社アルバック ドライエッチング方法
JP5309587B2 (ja) 2008-02-07 2013-10-09 富士電機株式会社 炭化珪素半導体基板のトレンチエッチング方法
JP2009194194A (ja) * 2008-02-15 2009-08-27 Sumitomo Precision Prod Co Ltd プラズマ処理方法

Also Published As

Publication number Publication date
CN102473630A (zh) 2012-05-23
WO2011052296A1 (ja) 2011-05-05
JP2011096700A (ja) 2011-05-12
EP2495757A1 (en) 2012-09-05
KR20120073160A (ko) 2012-07-04
US20120052688A1 (en) 2012-03-01
EP2495757A4 (en) 2013-02-20
EP2495757B1 (en) 2020-04-22
KR101861709B1 (ko) 2018-05-28
US8673781B2 (en) 2014-03-18

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