JP5175261B2 - 応力を加えたSiN膜用アミノ・ビニルシラン前駆体 - Google Patents
応力を加えたSiN膜用アミノ・ビニルシラン前駆体 Download PDFInfo
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- JP5175261B2 JP5175261B2 JP2009259203A JP2009259203A JP5175261B2 JP 5175261 B2 JP5175261 B2 JP 5175261B2 JP 2009259203 A JP2009259203 A JP 2009259203A JP 2009259203 A JP2009259203 A JP 2009259203A JP 5175261 B2 JP5175261 B2 JP 5175261B2
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- vinylsilane
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- 239000002243 precursor Substances 0.000 title claims description 25
- JKAIQRHZPWVOQN-UHFFFAOYSA-N aminosilylethene Chemical compound N[SiH2]C=C JKAIQRHZPWVOQN-UHFFFAOYSA-N 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims description 50
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 16
- -1 isopropylamino Chemical group 0.000 claims description 15
- 229910021529 ammonia Inorganic materials 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 229920002554 vinyl polymer Polymers 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000006835 compression Effects 0.000 claims description 6
- 238000007906 compression Methods 0.000 claims description 6
- CKPCWHCCTJSKHK-UHFFFAOYSA-N CC(C)N[SiH](CC=C)NC(C)C Chemical group CC(C)N[SiH](CC=C)NC(C)C CKPCWHCCTJSKHK-UHFFFAOYSA-N 0.000 claims description 5
- WWDXBDRBEKUZOS-UHFFFAOYSA-N n-[bis(ethenyl)-(propan-2-ylamino)silyl]propan-2-amine Chemical compound CC(C)N[Si](C=C)(C=C)NC(C)C WWDXBDRBEKUZOS-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 4
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 4
- 150000001336 alkenes Chemical class 0.000 claims description 4
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 125000000524 functional group Chemical group 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- FIRXZHKWFHIBOF-UHFFFAOYSA-N n-(dimethylamino-ethenyl-methylsilyl)-n-methylmethanamine Chemical compound CN(C)[Si](C)(C=C)N(C)C FIRXZHKWFHIBOF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- QIYXRFMWGJJGGK-UHFFFAOYSA-N bis(ethenyl)-dipyrrolidin-1-ylsilane Chemical compound C1CCCN1[Si](C=C)(C=C)N1CCCC1 QIYXRFMWGJJGGK-UHFFFAOYSA-N 0.000 claims description 2
- 239000003085 diluting agent Substances 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- GYAFWFQRCYPXHP-UHFFFAOYSA-N n-[(tert-butylamino)-bis(ethenyl)silyl]-2-methylpropan-2-amine Chemical compound CC(C)(C)N[Si](C=C)(C=C)NC(C)(C)C GYAFWFQRCYPXHP-UHFFFAOYSA-N 0.000 claims description 2
- YTMGVLAWLCOWNT-UHFFFAOYSA-N n-[bis(ethenyl)-[ethyl(methyl)amino]silyl]-n-methylethanamine Chemical compound CCN(C)[Si](C=C)(C=C)N(C)CC YTMGVLAWLCOWNT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 6
- DNAJDTIOMGISDS-UHFFFAOYSA-N prop-2-enylsilane Chemical compound [SiH3]CC=C DNAJDTIOMGISDS-UHFFFAOYSA-N 0.000 description 6
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- 238000006459 hydrosilylation reaction Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XTFIVUDBNACUBN-UHFFFAOYSA-N 1,3,5-trinitro-1,3,5-triazinane Chemical compound [O-][N+](=O)N1CN([N+]([O-])=O)CN([N+]([O-])=O)C1 XTFIVUDBNACUBN-UHFFFAOYSA-N 0.000 description 1
- AGXAKMWXEUMUJO-UHFFFAOYSA-N 2,2-dipyrrolidin-1-ylethenylsilane Chemical compound N1(CCCC1)C(=C[SiH3])N1CCCC1 AGXAKMWXEUMUJO-UHFFFAOYSA-N 0.000 description 1
- KSHDNVQWZNQVPA-UHFFFAOYSA-N 3,3-dipyrrolidin-1-ylprop-2-enylsilane Chemical compound N1(CCCC1)C(=CC[SiH3])N1CCCC1 KSHDNVQWZNQVPA-UHFFFAOYSA-N 0.000 description 1
- GEVAFTKFWIIJSW-UHFFFAOYSA-N CC(C)(C)N[SiH](NC(C)(C)C)C=C Chemical compound CC(C)(C)N[SiH](NC(C)(C)C)C=C GEVAFTKFWIIJSW-UHFFFAOYSA-N 0.000 description 1
- XIHUYLRLZWGSJJ-UHFFFAOYSA-N CC(C)N[SiH](NC(C)C)C=C Chemical compound CC(C)N[SiH](NC(C)C)C=C XIHUYLRLZWGSJJ-UHFFFAOYSA-N 0.000 description 1
- NWFAUSKBYPKWEL-UHFFFAOYSA-N CCN(C)[SiH](C=C)N(C)CC Chemical compound CCN(C)[SiH](C=C)N(C)CC NWFAUSKBYPKWEL-UHFFFAOYSA-N 0.000 description 1
- ZQIFANAXOWQNDP-UHFFFAOYSA-N CCN(C)[SiH](CC=C)N(C)CC Chemical compound CCN(C)[SiH](CC=C)N(C)CC ZQIFANAXOWQNDP-UHFFFAOYSA-N 0.000 description 1
- ARRQPLGRLNRXQZ-UHFFFAOYSA-N C[Si](C)(C)N[Si+](C)(C)C Chemical compound C[Si](C)(C)N[Si+](C)(C)C ARRQPLGRLNRXQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- ANMCQYPNSHSXQM-UHFFFAOYSA-N N-[(tert-butylamino)-prop-2-enylsilyl]-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH](CC=C)NC(C)(C)C ANMCQYPNSHSXQM-UHFFFAOYSA-N 0.000 description 1
- HWMSPZAHEQSTBJ-UHFFFAOYSA-N N-[diethylamino(ethenyl)silyl]-N-ethylethanamine Chemical compound CCN(CC)[SiH](C=C)N(CC)CC HWMSPZAHEQSTBJ-UHFFFAOYSA-N 0.000 description 1
- MZCLDLQRNBVYQF-UHFFFAOYSA-N N-[diethylamino(prop-2-enyl)silyl]-N-ethylethanamine Chemical compound CCN(CC)[SiH](CC=C)N(CC)CC MZCLDLQRNBVYQF-UHFFFAOYSA-N 0.000 description 1
- CKSOBGJCMJUUGY-UHFFFAOYSA-N N-[dimethylamino(ethenyl)silyl]-N-methylmethanamine Chemical compound CN(C)[SiH](C=C)N(C)C CKSOBGJCMJUUGY-UHFFFAOYSA-N 0.000 description 1
- 229910008072 Si-N-Si Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- FYYCXYLMGPRWLV-UHFFFAOYSA-N n-[diethylamino-bis(ethenyl)silyl]-n-ethylethanamine Chemical compound CCN(CC)[Si](C=C)(C=C)N(CC)CC FYYCXYLMGPRWLV-UHFFFAOYSA-N 0.000 description 1
- DMSOEJVWAVNUGE-UHFFFAOYSA-N n-[dimethylamino-bis(ethenyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C=C)(C=C)N(C)C DMSOEJVWAVNUGE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006462 rearrangement reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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Description
本願は、11/12/2008に出願された米国特許仮出願番号第61/113,624号の利益を主張する。
[RR1N]xSiR3 y(R2)z
{式中、x+y+z=4、x=1〜3、y=0〜2、及びz=1〜3であり;R、R1及びR3が、水素、C1〜C10アルカン、アルケン、又はC4〜C12芳香族であり得;各R2が、ビニル、アリル、又はビニル含有官能基である。}から選択されるアミノ・ビニルシラン・ベースの前駆体を使用する。
[RR1N]xSiR3 y(R2)z
以下の表1の実験(Runs)A〜Fにおける堆積条件、及び得られる対応する膜応力は、以下のとおりである。堆積温度は400℃であった。これらの実施例では、特性を、中程度の抵抗率(8〜12Ωcm)の単結晶シリコン・ウエハー基板上に堆積させたサンプル膜から得た。すべての堆積を、Advanced Energy 2000 RF発電機を備えた200mmのDXZチャンバー内でApplied Materials Precision 5000システムにより実施した。プラズマは13.56MHzの単一波長である。
表1に挙げた作業条件Aの下では、(BTBASなどの)非ビニル前駆体を使用した膜の応力が、(BIPAVMS)のそれより低い。
代替のツール及びシャワーヘッド配置を除いて、表1に挙げた作業条件Aの下では、前駆体中のビニル基の数が増加する従って、堆積された膜の応力が増強される。
Claims (17)
- 以下の式:
[RR1N]xSiR3 y(R2)z
{式中、x+y+z=4、x=1〜3、y=0〜2、及びz=1〜3であり;R、R1及びR3が、水素、C1〜C10アルカン、アルケン、又はC4〜C12芳香族であり得;各R2が、ビニル、アリル、又はビニル含有官能基である。}から選択される、アミノ・ビニルシラン・ベースの前駆体〔ビス(ジメチルアミノ)メチルビニルシランを除く。〕から膜を堆積するステップを含む、窒化シリコン(SiN)及び炭窒化シリコン(SiCN)薄膜のプラズマ化学気相成長(PECVD)における内部圧縮応力の増強方法。 - 前記アミノ・ビニルシラン・ベースの前駆体が、ビス(イソ-プロピルアミノ)ビニルメチルシラン(BIPAVMS)、ビス(イソ-プロピルアミノ)ジビニルシラン(BIPADVS)、及びその混合物から成る群から選択される、請求項1に記載の方法。
- 前記の圧縮によって応力を加えた膜が、−4GPa以上の圧縮応力を受ける、請求項1に記載の方法。
- 窒素含有反応物を、前記アミノ・ビニルシラン・ベースの前駆体と反応させる、請求項1に記載の方法。
- 前記窒素含有反応物が、アンモニア、窒素、及びその混合物から成る群から選択される、請求項4に記載の方法。
- 前記堆積を、500℃以下の温度にて実施する、請求項1に記載の方法。
- 前記堆積が、ヘリウム、アルゴン、ネオン、キセノン、及びその混合物から成る群から選択される希釈ガスの存在下で実施される、請求項1に記載の方法。
- 前記アミノ・ビニルシラン・ベースの前駆体の流量が、50〜1000mg/分である、請求項1に記載の方法。
- 前記窒素含有反応物の流量が、500〜10,000mg/分である、請求項4に記載の方法。
- 前記希釈ガスの流量が、50〜50,000mg/分である、請求項7に記載の方法。
- 前記堆積薄膜が、−700〜−2400MPaの圧縮応力を受ける、請求項1に記載の方法。
- 前記堆積薄膜が、25〜85のN-H対Si-H比を有する、請求項1に記載の方法。
- 前記堆積薄膜が、3.3〜3.6の範囲のN-H由来H含有量/cm3×1022を有する、請求項1に記
載の方法。 - 前記堆積薄膜が、−700〜−4500MPaの圧縮応力を受ける、請求項1に記載の方法。
- 前記堆積薄膜が、MOSFETゲート構造上部に堆積される、請求項1〜14のいずれか1項に記載の方法。
- 一般式:
[RR1N]xSiR3 y(R2)z
{式中、x+y+z=4、x=1〜3、y=0〜2、及びz=1〜3であり;R、R1及びR3が、それぞれ独立して水素、C1〜C10アルカン、C2〜C10アルケン、又はC4〜C12芳香族から選択され;各R2が、ビニル、アリル、又はビニル含有官能基である。}で表わされる前駆体〔ビス(ジメチルアミノ)メチルビニルシランを除く。〕。 - ビス(イソプロピルアミノ)ジビニルシラン(BIPADVS)、ビス(イソプロピルアミノ)ジアリルシラン、ビス(t-ブチルアミノ)ジビニルシラン、ビス(t-ブチルアミノ)ジアリルシラン、ビス(ジエチルアミノ)ジアリルシラン、ビス(メチルエチルアミノ)ジアリルシラン、ビス(メチルエチルアミノ)ジビニルシラン、ジピペリジノジビニルシラン、及びジピロリジノジビニルシランから成る群から選択される、請求項16に記載の前駆体。
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US8580993B2 (en) | 2008-11-12 | 2013-11-12 | Air Products And Chemicals, Inc. | Amino vinylsilane precursors for stressed SiN films |
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US8460753B2 (en) * | 2010-12-09 | 2013-06-11 | Air Products And Chemicals, Inc. | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes |
US8647993B2 (en) * | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
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KR20170019668A (ko) * | 2015-08-12 | 2017-02-22 | (주)디엔에프 | 플라즈마 원자층 증착법을 이용한 실리콘 질화 박막의 제조방법 |
US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
WO2018016871A1 (ko) * | 2016-07-22 | 2018-01-25 | (주)디엔에프 | 플라즈마 원자층 증착법을 이용한 실리콘 질화 박막의 제조방법 |
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