TWI412622B - 用於應力的SiN膜的胺基乙烯基矽烷前驅物 - Google Patents
用於應力的SiN膜的胺基乙烯基矽烷前驅物 Download PDFInfo
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- TWI412622B TWI412622B TW098137987A TW98137987A TWI412622B TW I412622 B TWI412622 B TW I412622B TW 098137987 A TW098137987 A TW 098137987A TW 98137987 A TW98137987 A TW 98137987A TW I412622 B TWI412622 B TW I412622B
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- Prior art keywords
- decane
- bis
- group
- vinyl
- allyl
- Prior art date
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- 239000002243 precursor Substances 0.000 title claims abstract description 30
- JKAIQRHZPWVOQN-UHFFFAOYSA-N aminosilylethene Chemical compound N[SiH2]C=C JKAIQRHZPWVOQN-UHFFFAOYSA-N 0.000 title abstract description 4
- 239000010408 film Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 13
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 56
- -1 aminovinylcyclodecane Chemical compound 0.000 claims description 35
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 25
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 14
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1-dodecene Chemical compound CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 claims description 6
- HPENIWFHQIWIHL-UHFFFAOYSA-N CCCCCCCCC(C(C=C)(C=C)NC(C)C)NC(C)C Chemical compound CCCCCCCCC(C(C=C)(C=C)NC(C)C)NC(C)C HPENIWFHQIWIHL-UHFFFAOYSA-N 0.000 claims description 6
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 5
- 150000001336 alkenes Chemical class 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 125000000524 functional group Chemical group 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- KDFMKVKTUCEEPQ-UHFFFAOYSA-N C(C)(C)NC(=CCCCCCCCCCCC)NC(C)C Chemical compound C(C)(C)NC(=CCCCCCCCCCCC)NC(C)C KDFMKVKTUCEEPQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005977 Ethylene Substances 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 239000003085 diluting agent Substances 0.000 claims description 4
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- BBICMTJAUPFALZ-UHFFFAOYSA-N CN(CC)C(C(C=C)(C=C)N(C)CC)CCCCCCCC Chemical compound CN(CC)C(C(C=C)(C=C)N(C)CC)CCCCCCCC BBICMTJAUPFALZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- ZBNLMCNHHAWLOB-UHFFFAOYSA-N C(C)(C)NC(=CCCCCCCCCCC)NC(C)C Chemical group C(C)(C)NC(=CCCCCCCCCCC)NC(C)C ZBNLMCNHHAWLOB-UHFFFAOYSA-N 0.000 claims description 2
- ZIMCWQKZXWNJDC-UHFFFAOYSA-N C(C)N(CC)C(C(C=C)(C=C)N(CC)CC)CCCCCCCC Chemical compound C(C)N(CC)C(C(C=C)(C=C)N(CC)CC)CCCCCCCC ZIMCWQKZXWNJDC-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- OGNIRUSROLJRSJ-UHFFFAOYSA-N dodec-1-en-1-amine Chemical compound CCCCCCCCCCC=CN OGNIRUSROLJRSJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- JNLOCSOBPDIZCF-UHFFFAOYSA-N N1(CCCC1)C(CCCCCCCCC)(C=C)N1CCCC1 Chemical compound N1(CCCC1)C(CCCCCCCCC)(C=C)N1CCCC1 JNLOCSOBPDIZCF-UHFFFAOYSA-N 0.000 claims 3
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims 3
- 239000000376 reactant Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 2
- 125000005271 tributylamino group Chemical group 0.000 claims 2
- PPWXVBZFIPIWAX-UHFFFAOYSA-N 2-cyclohexylethenamine Chemical compound NC=CC1CCCCC1 PPWXVBZFIPIWAX-UHFFFAOYSA-N 0.000 claims 1
- MWSJZNDJYPNARD-UHFFFAOYSA-N 3-methyldodec-1-ene Chemical compound CCCCCCCCCC(C)C=C MWSJZNDJYPNARD-UHFFFAOYSA-N 0.000 claims 1
- PRCSZTAFMUTDTA-UHFFFAOYSA-N C(=C)C(CCCCCCCCC)C=C Chemical compound C(=C)C(CCCCCCCCC)C=C PRCSZTAFMUTDTA-UHFFFAOYSA-N 0.000 claims 1
- YNSOHMKFQPDTRM-UHFFFAOYSA-N C(C)(C)(C)NC(=CCCCCCCCCCCC)NC(C)(C)C Chemical compound C(C)(C)(C)NC(=CCCCCCCCCCCC)NC(C)(C)C YNSOHMKFQPDTRM-UHFFFAOYSA-N 0.000 claims 1
- VRTRQZOVVNFGDF-UHFFFAOYSA-N C(C)N(CC)C(=CCCCCCCCCCC)N(CC)CC Chemical compound C(C)N(CC)C(=CCCCCCCCCCC)N(CC)CC VRTRQZOVVNFGDF-UHFFFAOYSA-N 0.000 claims 1
- YEOULPUTYPMCAG-UHFFFAOYSA-N CCCCCCCCCC(CC=C)(N1CCCC1)N2CCCC2 Chemical compound CCCCCCCCCC(CC=C)(N1CCCC1)N2CCCC2 YEOULPUTYPMCAG-UHFFFAOYSA-N 0.000 claims 1
- SEJOFYPFJXKBCV-UHFFFAOYSA-N CCCCCCCCCC=C(NC(C)C)NC(C)C Chemical compound CCCCCCCCCC=C(NC(C)C)NC(C)C SEJOFYPFJXKBCV-UHFFFAOYSA-N 0.000 claims 1
- VSIJIMVAVJOQDX-UHFFFAOYSA-N CN(CC)C(=CCCCCCCCCCC)N(C)CC Chemical compound CN(CC)C(=CCCCCCCCCCC)N(C)CC VSIJIMVAVJOQDX-UHFFFAOYSA-N 0.000 claims 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- DIXBSCZRIZDQGC-UHFFFAOYSA-N diaziridine Chemical compound C1NN1 DIXBSCZRIZDQGC-UHFFFAOYSA-N 0.000 claims 1
- 150000001993 dienes Chemical class 0.000 claims 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 1
- 238000007736 thin film deposition technique Methods 0.000 claims 1
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- YOZCOPYRQLXIDM-UHFFFAOYSA-N 1-N,1-N'-di(propan-2-yl)-3-silylprop-1-ene-1,1-diamine Chemical compound C(C)(C)NC(=CC[SiH3])NC(C)C YOZCOPYRQLXIDM-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- WWDXBDRBEKUZOS-UHFFFAOYSA-N n-[bis(ethenyl)-(propan-2-ylamino)silyl]propan-2-amine Chemical compound CC(C)N[Si](C=C)(C=C)NC(C)C WWDXBDRBEKUZOS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 62
- 238000005516 engineering process Methods 0.000 description 5
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 4
- ZQTDLOJTSVNHEH-UHFFFAOYSA-N dodec-1-en-3-amine Chemical compound C=CC(CCCCCCCCC)N ZQTDLOJTSVNHEH-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- MSMBMPVUCWOJPY-UHFFFAOYSA-N 1-N,1-N'-ditert-butyldecane-1,1-diamine Chemical compound C(C)(C)(C)NC(NC(C)(C)C)CCCCCCCCC MSMBMPVUCWOJPY-UHFFFAOYSA-N 0.000 description 1
- VQOXUMQBYILCKR-UHFFFAOYSA-N 1-Tridecene Chemical compound CCCCCCCCCCCC=C VQOXUMQBYILCKR-UHFFFAOYSA-N 0.000 description 1
- ULUNQYODBKLBOE-UHFFFAOYSA-N 2-(1h-pyrrol-2-yl)-1h-pyrrole Chemical compound C1=CNC(C=2NC=CC=2)=C1 ULUNQYODBKLBOE-UHFFFAOYSA-N 0.000 description 1
- SBVRKPAUMVPMBD-UHFFFAOYSA-N C(C)(C)(C)NNC(=CCCCCCCCCC)NNC(C)(C)C Chemical compound C(C)(C)(C)NNC(=CCCCCCCCCC)NNC(C)(C)C SBVRKPAUMVPMBD-UHFFFAOYSA-N 0.000 description 1
- VJLWPUWREZEDHN-UHFFFAOYSA-N C(C)(C)(C)NNC(CCCC(CCCC)(C=C)C=C)NNC(C)(C)C Chemical compound C(C)(C)(C)NNC(CCCC(CCCC)(C=C)C=C)NNC(C)(C)C VJLWPUWREZEDHN-UHFFFAOYSA-N 0.000 description 1
- PXNFBQBRSWMSJF-UHFFFAOYSA-N C(C)N(CC)C(=CCCCCCCCCC)N(CC)CC Chemical compound C(C)N(CC)C(=CCCCCCCCCC)N(CC)CC PXNFBQBRSWMSJF-UHFFFAOYSA-N 0.000 description 1
- IQZHQMFSDNIDHK-UHFFFAOYSA-N CCCCCCCCCC=C(N(C)CC)N(C)CC Chemical compound CCCCCCCCCC=C(N(C)CC)N(C)CC IQZHQMFSDNIDHK-UHFFFAOYSA-N 0.000 description 1
- SLZVCFPRFRTEMM-UHFFFAOYSA-N CCCCCCCCCCC=C(N(C)C)N(C)C Chemical compound CCCCCCCCCCC=C(N(C)C)N(C)C SLZVCFPRFRTEMM-UHFFFAOYSA-N 0.000 description 1
- HAVLWIDLGIQUDA-UHFFFAOYSA-N CCCCCCCCCCC=C(NC(C)(C)C)NC(C)(C)C Chemical compound CCCCCCCCCCC=C(NC(C)(C)C)NC(C)(C)C HAVLWIDLGIQUDA-UHFFFAOYSA-N 0.000 description 1
- AJHQQZXZENJHAQ-UHFFFAOYSA-N CCCCCCCCCCCC=C(N(C)C)N(C)C Chemical compound CCCCCCCCCCCC=C(N(C)C)N(C)C AJHQQZXZENJHAQ-UHFFFAOYSA-N 0.000 description 1
- FWDMRJOUVBOZSM-UHFFFAOYSA-N CN(C)C(C(C=C)(C=C)N(C)C)CCCCCCCC Chemical compound CN(C)C(C(C=C)(C=C)N(C)C)CCCCCCCC FWDMRJOUVBOZSM-UHFFFAOYSA-N 0.000 description 1
- ATZQNZPMIVNZKD-UHFFFAOYSA-N CN(CC)C(=CCCCCCCCCCCC)N(C)CC Chemical compound CN(CC)C(=CCCCCCCCCCCC)N(C)CC ATZQNZPMIVNZKD-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- VASFARWEZGVIFQ-UHFFFAOYSA-N N1(CCCC1)C(C(C)(C=C)N1CCCC1)CCCCCCCC Chemical compound N1(CCCC1)C(C(C)(C=C)N1CCCC1)CCCCCCCC VASFARWEZGVIFQ-UHFFFAOYSA-N 0.000 description 1
- DSLDNHIMUXJRFR-UHFFFAOYSA-N N1(CCCC1)C(C(C=C)(C=C)N1CCCC1)CCCCCCCC Chemical compound N1(CCCC1)C(C(C=C)(C=C)N1CCCC1)CCCCCCCC DSLDNHIMUXJRFR-UHFFFAOYSA-N 0.000 description 1
- 239000004614 Process Aid Substances 0.000 description 1
- 229910008072 Si-N-Si Inorganic materials 0.000 description 1
- 206010042209 Stress Diseases 0.000 description 1
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 1
- 125000002009 alkene group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HAMNKKUPIHEESI-UHFFFAOYSA-N aminoguanidine Chemical class NNC(N)=N HAMNKKUPIHEESI-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006146 oximation reaction Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- ZZIZZTHXZRDOFM-XFULWGLBSA-N tamsulosin hydrochloride Chemical compound [H+].[Cl-].CCOC1=CC=CC=C1OCCN[C@H](C)CC1=CC=C(OC)C(S(N)(=O)=O)=C1 ZZIZZTHXZRDOFM-XFULWGLBSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005891 transamination reaction Methods 0.000 description 1
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
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Description
本申請主張於11/12/2008申請的美國臨時專利申請序列號61/113,624的權利。
本發明涉及一種提高在氮化矽(SiN)和碳氮化矽(SiCN)薄膜的電漿增強化學氣相沉積(PECVD)中本徵壓應力的方法。
本發明屬於積體電路製造領域以及特別是薄膜中結構的材料,所述薄膜與積體電路中的電子器件相鄰接或為之一部分,例如電晶體、電容、導通孔(vias)、導電線路以及母線(buss bars)。由於此類電子器件的尺寸持續不斷縮小以及此類器件在給定區域內的密度增加,與此類電子器件相鄰接或為之一部分的薄膜勢必要顯示出更高的電特性。設計應力(design stress)到此類薄膜中可以改變它們的電特性。目前使用PECVD氮化矽薄膜的應力工程設計來增進前沿金屬氧化物半導體場效電晶體(MOSFET)技術的性能。器件速度已經通過應用沉積在MOSFET閘極結構頂部上的高應力SiN薄膜得到顯著增加。通過電洞遷移率的提高,壓應力(compressive stresss)增強了“P”型場效電晶體(pFET)器件,同時,通過電子遷移率的提高,張應力有益於“N”型場效電晶體(nFET)器件。應力是由相接觸的兩種材料之間熱膨脹的差異產生。電漿增強化學氣相沉積(PECVD)氮化矽薄膜通常產生壓應力。目前,使用矽烷和氨沉積壓應力薄膜,據報導壓應力至多達~-3.5千兆帕斯卡(GPa)。更進一步提高壓應力變得特別具挑戰性。本行業目前的目標為具有-4GPa或更高壓應力的薄膜。
與該技術相關的專利包括:US 2006/0045986、EP 1 630 249、US 2006/0258173、EP 1 724 373、US 7288145、US 7122222、US20060269692、WO2006/127462及US2008/0146007,以及參考文獻“Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress.”,M.Belyansky等,J. Vac. Sci. Technol. A 26(3),517(2008)。
本發明是一種提高電漿增強化學氣相沉積(PECVD)氮化矽(SiN)和碳氮化矽(SiCN)薄膜中本徵壓應力(intrinsic compressive stress)的方法,包括從基於胺基乙烯基矽烷的前驅物沉積所述薄膜。
更具體地,本發明使用選自式:[RR1
N]x
SiR3 y
(R2
)z
的基於胺基乙烯基矽烷的前驅物,其中x+y+z=4,x=1-3,y=0-2以及z=1-3;R、R1
和R3
可以是氫、C1
-C10
烷烴(基)、烯烴(基)或C4
-C12
芳香基團;各個R2
為乙烯基、烯丙基或包含乙烯基的官能團。
本發明提供基於胺基乙烯基矽烷的前驅物作為提高電漿增強化學氣相沉積(PECVD)氮化矽(SiN)和碳氮化矽(SiCN)薄膜中的本徵壓應力的方法。這些胺基乙烯基矽烷前驅物的主要特徵為一或兩個鍵接到中心矽原子的乙烯基官能團。所述前驅物具有以下通式:[RR1
N]x
SiR3 y
(R2
)z
其中x+y+z=4,x=1-3,y=0-2,以及z=1-3。R、R1
和R3
可以為氫、C1
到C10
烷烴(基)、烯烴(基)或C4
-C12
芳香基團;各個R2
為乙烯基、烯丙基或其他包含乙烯基的官能團。發現將乙烯基基團加入到胺基矽烷提高了使用這些前驅物沉積的SiN和SiCN薄膜的本徵壓應力。
所述胺基乙烯基矽烷前驅物包括但不限於雙(異丙基胺基)乙烯基甲基矽烷(BIPAVNS)、雙(異丙基胺基)二乙烯基矽烷(BIPADVS)、雙(異丙基胺基)乙烯基矽烷、雙(異丙基胺基)烯丙基甲基矽烷、雙(異丙基胺基)二烯丙基矽烷、雙(異丙基胺基)烯丙基矽烷、雙(第三丁基胺基)乙烯基甲基矽烷、雙(第三丁基胺基胺基)二乙烯基矽烷、雙(第三丁基胺基胺基)乙烯基矽烷、雙(第三丁基胺基胺基)烯丙基甲基矽烷、雙(第三丁基胺基胺基)二烯丙基矽烷、雙(第三丁基胺基胺基)烯丙基矽烷、雙(二乙基胺基)乙烯基甲基矽烷、雙(二乙基胺基)二乙烯基矽烷、雙(二乙基胺基)乙烯基矽烷、雙(二乙基胺基)烯丙基甲基矽烷、雙(二乙基胺基)二烯丙基矽烷、雙(二乙基胺基)烯丙基矽烷、雙(二甲基胺基)乙烯基甲基矽烷、雙(二甲基胺基)二乙烯基矽烷、雙(二甲基胺基)乙烯基矽烷、雙(二甲基胺基)烯丙基甲基矽烷、雙(二甲基胺基)二烯丙基矽烷、雙(二甲基胺基)烯丙基矽烷、雙(甲基乙基胺基)乙烯基甲基矽烷、雙(甲基乙基胺基)二乙烯基矽烷、雙(甲基乙基胺基)乙烯基矽烷、雙(甲基乙基胺基)烯丙基甲基矽烷、雙(甲基乙基胺基)二烯丙基矽烷、雙(甲基乙基胺基)烯丙基矽烷、二呱啶基乙烯基甲基矽烷、二呱啶基二乙烯基矽烷、二呱啶基乙烯基矽烷、二呱啶基烯丙基甲基矽烷、二呱啶基二烯丙基矽烷、二呱啶基烯丙基矽烷、二吡咯烷基乙烯基甲基矽烷、二吡咯烷基二乙烯基矽烷、二吡咯烷基乙烯基矽烷、二吡咯烷基烯丙基甲基矽烷、二吡咯烷基二烯丙基矽烷、二吡咯烷基烯丙基矽烷。
試驗中所使用的具體前驅物為雙(異丙基胺基)乙烯基甲基矽烷(BIPAVMS)。另一類似前驅物為雙(異丙基胺基)二乙烯基矽烷(BIPADVS)。
目前使用PECVD氮化矽薄膜的應力工程設計來增進前沿(cutting edge)MOSFET技術的性能。器件速度已經通過應用沉積在MOSFET閘結構頂部上的高應力SiN薄膜得到顯著增加。通過電洞遷移率的提高,壓應力增強了pFET器件,同時,通過電子遷移率的提高,張應力有益於nFET器件。由相接觸的兩種材料之間熱膨脹的差異產生應力。PECVD氮化矽薄膜通常生成壓應力。目前,使用矽烷和氨沉積壓應力薄膜,據報導壓應力至多達~-3.5GPa。更進一步提高壓應力變得特別具挑戰性。本行業目前的目標為具有-4GPa或更高壓應力的薄膜。
-4GPa壓應力薄膜的目標可以通過使用上述的胺基乙烯基矽烷前驅物來實現。在本發明中,可以獲得-0.7到-4.5GPa(-700到-4500MPa)的壓應力。到目前為止,應力生成方面的增加大多數是通過製程技術,例如電漿表面處理、多層沉積、雙頻電漿以及其他類似方法。本發明最先特別地使用特定類型的含矽前驅物來增加薄膜應力。
標準沉積方法具有它們可產生的應力值的限制。應力的目前目標對於張應力為1.5GPa以及對於壓應力為-4GPa。
已經觀察到SiN薄膜中更高的氫摻入導致更高的壓應力。我們認為使用胺基乙烯基矽烷例如BIPADVS和BIPAVMS沉積的PECVD SiN薄膜可以由於全氫摻入以及此外通過氫摻入的類型(即氮鍵接的氫與矽鍵接的氫)而產生高的壓應力。我們已經說明對於雙(第三丁基胺基)矽烷(BTBAS)以及BIPAVMS二者,壓應力與N-H對Si-H的比值呈強相關,具有高的N-H對Si-H比值會導致更高的壓應力。使用胺基矽烷與氨的混合物沉積的薄膜通過轉胺反應自然地導致含有高N-H比Si-H含量的薄膜。
此外,已經發現含有乙烯基官能團的胺基矽烷例如BIPADVS和BIPAVMS更進一步提高所述壓應力。乙烯基基團在生成薄膜應力方面起重要作用。在電漿情況下,碳-碳雙鍵可以形成交聯點,其通過使原子保持靠近而提高薄膜的密度。所述前驅物的Si-H鍵以氫化矽烷化反應與碳-碳雙鍵反應,在矽原子之間形成亞乙基橋。亞乙基橋使所述矽原子保持靠近,以及因而被氨替代,以及該過程幫助Si-N-Si結構的形成。
本發明涉及通過使用該特定類別的胺基矽烷前驅物即胺基乙烯基矽烷採用PEVCD來沉積高應力氮化矽(SiN)薄膜或碳氮化矽(SiCN)薄膜從而克服本徵應力產生的限制。發現將乙烯基基團加入到胺基矽烷提高使用這些前驅物沉積的SiN和SiCN薄膜的本徵壓應力。
為了沉積壓應力氮化矽或碳氮化矽薄膜,將所述胺基乙烯基矽烷在500℃或以下的晶片溫度下於PECVD室中與含氮氣體反應。所述含氮氣體可以為氨氣、氮氣或其組合。另外,可以引入稀釋氣體例如但不限於He、Ar、Ne、Xe或氫氣以改善所述薄膜性能。例如,將雙(異丙基胺基)乙烯基甲基矽烷(BIPAVMS)(圖1A)或雙(異丙基胺基)二乙烯基矽烷(BIPADVS)(圖1B)與氨引入PECVD室並使它們反應,導致壓應力SiN薄膜的沉積,合適的BIPAVMS流速可以在50到大約1000mg/min的範圍內變化。合適的氨氣和/或氮氣流速可以在500到10,000sccm的範圍內變化,以及所述稀釋氣體可以在50到50,000sccm範圍內變化。
在下表1中獲得的操作A-F的沉積條件以及相應的薄膜應力,如下所示。沉積溫度為400C。在這些實施例中,從沉積到介質電阻率(8-12Ωcm)單晶矽晶片基材上的樣品薄膜獲取性能。所有沉積在配備有Advanced Energy 2000 RF產生器的200mm DXZ室中在Applied Materials Precision 5000系統上進行。所述電漿是單頻13.56MHz。
在表1實施例中,厚度和光學性質,例如所述介電膜的折射率在SCI Filmtek Reflectometer上測定。所述折射率使用632nm波長光測定。在氮氣吹掃過的小室中使用Thermo Nicolet 750系統在所述晶片上收集Fourier Infrared Spectroscopy(FTIR)資料。本底譜圖在類似介質電阻率晶片上收集以從所述譜圖消除CO2
和水。資料通過以4cm-1
的解析度在4000到400cm-1
範圍內收集32個掃描值獲得。使用OMNIC套裝軟體處理所述資料。薄膜應力測量使用鐳射光束散射工具(Toho Technology Corp.,Model:FLX2320S)獲得。
在400℃下使用雙(異丙基胺基)乙烯基甲基矽烷和氨而沉積的氮化矽薄膜的薄膜應力數據示於圖2。所述薄膜在多種製程條件,例如前驅物和氣體流速、壓力和RF功率下沉積。所述薄膜是單層,厚度在100到350nm的範圍內。所述電漿使用單頻13.56MHz生成。這些薄膜的壓應力在-700到-2400兆帕斯卡(MPa)範圍內變化。在可比較的製程條件下,這些薄膜產生比BTBAS高~1.5到1.8倍的壓應力。
圖3說明來自圖2的具有最低(薄膜C)和最高(薄膜E)壓應力的薄膜的FTIR譜。這兩種薄膜均顯示出類似強度的NHx
拉伸和彎曲模式。但是,在~2190cm-1
處SiH峰存在明顯的差異,因而表示主要區別在於氫是否鍵接至氮或矽。
圖4描述NHx
與SiH的比值與應力之間的相互關係。由此圖可以看出,應力伴隨著更高的NHx
與SiH比值而增加。優選地,所沉積的薄膜具有25到85的N-H與Si-H比值,最優選70。
圖5描述了氮鍵接的氫(NHx
)與應力之間的以及矽鍵接的氫與應力之間的相互關係。這些資料表明除了高含量的NHx
部分之外SiH基團的減少在高水準壓應力的產生中是重要的。來源於NHx
部分的氫含量在2.9到3.5H含量/cm3
×1022
,優選3.3到3.6H含量/cm3
×1022
的範圍內增加壓應力。
實驗資料表明具有更高應力值的薄膜未發現含有碳。推斷所述碳被氨侵蝕失去,其與所述前驅物相比是高過量的。在更高應力SiN薄膜中,更多Si-H鍵被乙烯基的氫化矽烷化所去除,以及通過以氨去除亞乙基橋而被N-H替代。
在列於表1的製程條件A下,使用非乙烯基前驅物(例如BTBAS)的薄膜的應力比(BIPAVMS)的更低。
在列於表1的製程條件A下,除了可選的工具和噴氣頭(showerhead)結構之外,當前驅物中乙烯基基團的數目增加時,所沉積的薄膜的應力增加。
圖1A和B為本發明的化學前驅物物質的結構式的描述。
圖2為在多種製程條件下通過BIPAVMS和氨的PECVD沉積形成的薄膜的應力值圖。
圖3為使用BIPAVMS和氨以PECVD沉積的氮化矽薄膜的FTIR譜。
圖4為描繪氮鍵接氫(NHx
)與矽鍵接氫(SiH)含量的比值相對於薄膜應力的圖。
圖5為描繪NHx
和SiH含量相對於薄膜應力的圖。
Claims (19)
- 一種提高在氮化矽(SiN)和碳氮化矽(SiCN)薄膜的電漿增強化學氣相沉積(PECVD)中的本徵壓應力的方法,包括從基於胺基乙烯基矽烷的前驅物沉積所述薄膜,其中所述基於胺基乙烯基矽烷的前驅物選自式:[RR1 N]x SiR3 y (R2 )z 其中x+y+z=4,x=1-3,y=0-2以及z=1-3;R、R1 和R3 可以是氫、C1 -C10 烷烴、C2 -C10 烯烴或C4 -C12 芳香基團;各個R2 為乙烯基、烯丙基或包含乙烯基的官能團。
- 如申請專利範圍第1項的方法,其中所述基於胺基乙烯基矽烷的前驅物選自雙(異丙基胺基)乙烯基甲基矽烷(BIPAVMS)、雙(異丙基胺基)二乙烯基矽烷(BIPADVS)及其混合物。
- 如申請專利範圍第1項的方法,其中所述壓應力薄膜具有-4 GPa或更高的壓應力。
- 如申請專利範圍第1項的方法,其中含氮反應物與所述基於胺基乙烯基矽烷的前驅物反應。
- 如申請專利範圍第4項的方法,其中所述含氮反應物選自氨氣、氮氣及其混合物。
- 如申請專利範圍第1項的方法,其中所述沉積在500℃或低於500℃的升高溫度下進行。
- 如申請專利範圍第1項的方法,其中所述沉積在稀釋氣體的存在下進行,所述稀釋氣體選自氦氣、氬氣、氖氣、氙氣及其混合物。
- 如申請專利範圍第1項的方法,其中所述基於胺基乙烯基矽烷的前驅物的流速為50到1000 mg/min。
- 如申請專利範圍第4項的方法,其中所述含氮反應物的流速為500到10,000 mg/min。
- 如申請專利範圍第7項的方法,其中所述稀釋氣體的流速為50到50,000 mg/min。
- 如申請專利範圍第1項的方法,其中所述沉積薄膜具有-700到-2400 MPa的壓應力。
- 如申請專利範圍第1項的方法,其中所述沉積薄膜具有25到85的N-H對Si-H比值。
- 如申請專利範圍第1項的方法,其中所述沉積薄膜具有3.3到3.6範圍的衍生於N-H的H含量/cm3 ×1022 。
- 如申請專利範圍第1項的方法,其中所述沉積薄膜具有-700到-4500 MPa的壓應力。
- 一種用於沉積選自氮化矽(SiN)和碳氮化矽(SiCN)薄膜的一種薄膜之前驅物,其具有下列通式:[RR1 N]x SiR3 y (R2 )z ,其中x+y+z=4,x=1-3,y=0-2以及z=1-3;及其中R、R1 和R3 個別選自氫、C1 -C10 烷烴、C2 -C10 烯烴及C4 -C12 芳香基團所組成的群組;R2 為選自乙烯基、烯丙基及其它包含乙烯基的官能團所組成的群組,且當R2 為乙烯基,x=2,及y=0時,R及R1 不得同時為甲基。
- 如申請專利範圍第15項的前驅物,其係選自雙(異丙基胺基)二乙烯基矽烷(BIPADVS)、雙(異丙基胺基)二烯丙基矽烷、雙(第三丁基胺基)二乙烯基矽烷、雙(第三丁基胺基)二烯丙基矽烷、雙(二乙基胺基)二烯丙基矽烷、雙(甲基乙基胺基)二烯丙基矽烷、雙(甲基乙基胺基)二乙烯基矽烷、二呱啶基二乙烯基矽烷、及二吡咯烷基乙烯基矽烷所組成的群組。
- 如申請專利範圍第15項的前驅物,其係選自雙(異丙基胺基)乙烯基甲基矽烷(BIPAVNS)、雙(異丙基胺基)乙烯基矽烷、雙(異丙基胺基)烯丙基甲基矽烷、雙(異丙基胺基)烯丙基矽烷、雙(第三丁基胺基)乙烯基甲基矽烷、雙(第 三丁基胺基)乙烯基矽烷、雙(第三丁基胺基)烯丙基甲基矽烷、雙(第三丁基胺基)烯丙基矽烷、雙(二乙基胺基)乙烯基甲基矽烷、雙(二乙基胺基)二乙烯基矽烷、雙(二乙基胺基)乙烯基矽烷、雙(二乙基胺基)烯丙基甲基矽烷、雙(二乙基胺基)烯丙基矽烷、雙(二甲基胺基)烯丙基甲基矽烷、雙(二甲基胺基)二烯丙基矽烷、雙(二甲基胺基)烯丙基矽烷、雙(甲基乙基胺基)乙烯基甲基矽烷、雙(甲基乙基胺基)乙烯基矽烷、雙(甲基乙基胺基)烯丙基甲基矽烷、雙(甲基乙基胺基)烯丙基矽烷、二呱啶基乙烯基甲基矽烷、二呱啶基乙烯基矽烷、二呱啶基烯丙基甲基矽烷、二呱啶基二烯丙基矽烷、二呱啶基烯丙基矽烷、二吡咯烷基乙烯基甲基矽烷、二吡咯烷基乙烯基矽烷、二吡咯烷基烯丙基甲基矽烷、二吡咯烷基二烯丙基矽烷、及二吡咯烷基烯丙基矽烷所組成的群組。
- 一種薄膜沉積方法,該薄膜係選自氮化矽薄膜和碳氮化矽薄膜中的一種,包含:將一含氮氣體與具有下列通式之一前驅物反應以提供該薄膜:[RR1 N]x SiR3 y (R2 )z 其中x+y+z=4,x=1-3,y=0-2以及z=1-3;及其中R、R1 和R3 個別選自氫、C1 -C10 烷烴、C2 -C10 烯烴或C4 -C12 芳香基團所組成的群組;R2 為選自乙烯基、烯丙基及其它包含乙烯基的官能團所組成的群組,且當R2 為乙烯基,x=2, y=0,及z=2時,R及R1 不得同時為甲基。
- 如申請專利範圍第18項的方法,其中該前驅物係選自雙(異丙基胺基)二乙烯基矽烷(BIPADVS)、雙(異丙基胺基)二烯丙基矽烷、雙(第三丁基胺基)二乙烯基矽烷、雙(第三丁基胺基)二烯丙基矽烷、雙(二乙基胺基)二烯丙基矽烷、雙(甲基乙基胺基)二烯丙基矽烷、雙(甲基乙基胺基)二乙烯基矽烷、二呱啶基二乙烯基矽烷、及二吡咯烷基乙烯基矽烷所組成的群組。
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CN101899651B (zh) | 2012-12-26 |
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CN102491990A (zh) | 2012-06-13 |
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