JP5172654B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5172654B2
JP5172654B2 JP2008335532A JP2008335532A JP5172654B2 JP 5172654 B2 JP5172654 B2 JP 5172654B2 JP 2008335532 A JP2008335532 A JP 2008335532A JP 2008335532 A JP2008335532 A JP 2008335532A JP 5172654 B2 JP5172654 B2 JP 5172654B2
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type
diffusion region
layer
conductivity type
substrate
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Japanese (ja)
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JP2010157636A (ja
JP2010157636A5 (enExample
Inventor
有希 中邑
浩司 白井
博文 永野
純 森岡
翼 山田
和章 山浦
泰徳 岩津
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Toshiba Corp
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Toshiba Corp
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Priority to JP2008335532A priority Critical patent/JP5172654B2/ja
Priority to US12/644,734 priority patent/US8304827B2/en
Publication of JP2010157636A publication Critical patent/JP2010157636A/ja
Publication of JP2010157636A5 publication Critical patent/JP2010157636A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008335532A 2008-12-27 2008-12-27 半導体装置 Active JP5172654B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008335532A JP5172654B2 (ja) 2008-12-27 2008-12-27 半導体装置
US12/644,734 US8304827B2 (en) 2008-12-27 2009-12-22 Semiconductor device having on a substrate a diode formed by making use of a DMOS structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008335532A JP5172654B2 (ja) 2008-12-27 2008-12-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2010157636A JP2010157636A (ja) 2010-07-15
JP2010157636A5 JP2010157636A5 (enExample) 2011-05-12
JP5172654B2 true JP5172654B2 (ja) 2013-03-27

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Family Applications (1)

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JP2008335532A Active JP5172654B2 (ja) 2008-12-27 2008-12-27 半導体装置

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US (1) US8304827B2 (enExample)
JP (1) JP5172654B2 (enExample)

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JP5711646B2 (ja) * 2010-11-16 2015-05-07 株式会社豊田中央研究所 ダイオード
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8466489B2 (en) 2011-02-04 2013-06-18 Analog Devices, Inc. Apparatus and method for transient electrical overstress protection
US8592860B2 (en) 2011-02-11 2013-11-26 Analog Devices, Inc. Apparatus and method for protection of electronic circuits operating under high stress conditions
US8680620B2 (en) 2011-08-04 2014-03-25 Analog Devices, Inc. Bi-directional blocking voltage protection devices and methods of forming the same
JP2013073993A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
JP5749616B2 (ja) 2011-09-27 2015-07-15 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
US8947841B2 (en) * 2012-02-13 2015-02-03 Analog Devices, Inc. Protection systems for integrated circuits and methods of forming the same
US8829570B2 (en) 2012-03-09 2014-09-09 Analog Devices, Inc. Switching device for heterojunction integrated circuits and methods of forming the same
US8946822B2 (en) 2012-03-19 2015-02-03 Analog Devices, Inc. Apparatus and method for protection of precision mixed-signal electronic circuits
JP2013247188A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 半導体装置
US8610251B1 (en) * 2012-06-01 2013-12-17 Analog Devices, Inc. Low voltage protection devices for precision transceivers and methods of forming the same
US9142613B2 (en) 2012-08-23 2015-09-22 Kabushiki Kaisha Toshiba Semiconductor device
JP5904905B2 (ja) * 2012-08-23 2016-04-20 株式会社東芝 半導体装置
US8796729B2 (en) 2012-11-20 2014-08-05 Analog Devices, Inc. Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same
US9123540B2 (en) 2013-01-30 2015-09-01 Analog Devices, Inc. Apparatus for high speed signal processing interface
US9006781B2 (en) 2012-12-19 2015-04-14 Analog Devices, Inc. Devices for monolithic data conversion interface protection and methods of forming the same
US8860080B2 (en) 2012-12-19 2014-10-14 Analog Devices, Inc. Interface protection device with integrated supply clamp and method of forming the same
KR20150114982A (ko) * 2013-01-30 2015-10-13 마이크로칩 테크놀로지 인코포레이티드 Ｅｓｄ 자기­보호 기능을 구비한 ｄｍｏｓ 반도체 디바이스 및 그 기능부를 포함하는 ｌｉｎ 버스 드라이버
US9275991B2 (en) 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp
US9147677B2 (en) 2013-05-16 2015-09-29 Analog Devices Global Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same
US9171832B2 (en) 2013-05-24 2015-10-27 Analog Devices, Inc. Analog switch with high bipolar blocking voltage in low voltage CMOS process
US9059324B2 (en) * 2013-06-30 2015-06-16 Texas Instruments Incorporated Bi-directional ESD diode structure with ultra-low capacitance that consumes a small amount of silicon real estate
TWI522012B (zh) * 2013-11-19 2016-02-11 碩頡科技股份有限公司 整合式光源驅動電路及應用其之光源模組
JP2016025155A (ja) * 2014-07-17 2016-02-08 株式会社東芝 半導体装置
JP2016029685A (ja) * 2014-07-25 2016-03-03 株式会社東芝 半導体装置
US9484739B2 (en) 2014-09-25 2016-11-01 Analog Devices Global Overvoltage protection device and method
US9478608B2 (en) 2014-11-18 2016-10-25 Analog Devices, Inc. Apparatus and methods for transceiver interface overvoltage clamping
US10068894B2 (en) 2015-01-12 2018-09-04 Analog Devices, Inc. Low leakage bidirectional clamps and methods of forming the same
WO2016132417A1 (ja) * 2015-02-18 2016-08-25 富士電機株式会社 半導体集積回路
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
US9673187B2 (en) 2015-04-07 2017-06-06 Analog Devices, Inc. High speed interface protection apparatus
US9831233B2 (en) 2016-04-29 2017-11-28 Analog Devices Global Apparatuses for communication systems transceiver interfaces
US10734806B2 (en) 2016-07-21 2020-08-04 Analog Devices, Inc. High voltage clamps with transient activation and activation release control
WO2018030008A1 (ja) 2016-08-12 2018-02-15 富士電機株式会社 半導体集積回路
US9748339B1 (en) * 2017-01-06 2017-08-29 Vanguard International Semiconductor Corporation Semiconductor device and method for fabricating the same
US10249609B2 (en) 2017-08-10 2019-04-02 Analog Devices, Inc. Apparatuses for communication systems transceiver interfaces
CN109148444B (zh) * 2018-08-22 2020-10-27 电子科技大学 Bcd半导体器件及其制造方法
US10700056B2 (en) 2018-09-07 2020-06-30 Analog Devices, Inc. Apparatus for automotive and communication systems transceiver interfaces
US11387648B2 (en) 2019-01-10 2022-07-12 Analog Devices International Unlimited Company Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces
JP7260153B2 (ja) * 2019-03-29 2023-04-18 ラピスセミコンダクタ株式会社 半導体装置、およびその製造方法
CN111354724A (zh) * 2020-04-27 2020-06-30 上海华力微电子有限公司 一种硅控整流器及其制造方法
JP7759855B2 (ja) * 2022-08-10 2025-10-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11940828B2 (en) * 2022-08-17 2024-03-26 Vanguard International Semiconductor Corporation Voltage tracking circuits with low power consumption and electronic circuits using the same

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US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
JP3387940B2 (ja) * 1992-05-28 2003-03-17 ローム株式会社 電源バックアップ用半導体装置
US5818084A (en) * 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
JP4597284B2 (ja) 1999-04-12 2010-12-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2003509867A (ja) * 1999-09-16 2003-03-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置
JP4357127B2 (ja) * 2000-03-03 2009-11-04 株式会社東芝 半導体装置
JP4526179B2 (ja) * 2000-11-21 2010-08-18 三菱電機株式会社 半導体装置
JP4795613B2 (ja) 2001-04-23 2011-10-19 富士電機株式会社 半導体装置
US7719054B2 (en) * 2006-05-31 2010-05-18 Advanced Analogic Technologies, Inc. High-voltage lateral DMOS device
US7427795B2 (en) * 2004-06-30 2008-09-23 Texas Instruments Incorporated Drain-extended MOS transistors and methods for making the same
JP4906281B2 (ja) * 2005-03-30 2012-03-28 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP4845410B2 (ja) 2005-03-31 2011-12-28 株式会社リコー 半導体装置
US7439584B2 (en) * 2005-05-19 2008-10-21 Freescale Semiconductor, Inc. Structure and method for RESURF LDMOSFET with a current diverter
JP2008140817A (ja) * 2006-11-30 2008-06-19 Toshiba Corp 半導体装置

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US20100163973A1 (en) 2010-07-01
US8304827B2 (en) 2012-11-06
JP2010157636A (ja) 2010-07-15

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