JP5135501B2 - 窒化物単結晶基板の製造方法及びこれを利用した窒化物半導体発光素子の製造方法 - Google Patents
窒化物単結晶基板の製造方法及びこれを利用した窒化物半導体発光素子の製造方法 Download PDFInfo
- Publication number
- JP5135501B2 JP5135501B2 JP2008258418A JP2008258418A JP5135501B2 JP 5135501 B2 JP5135501 B2 JP 5135501B2 JP 2008258418 A JP2008258418 A JP 2008258418A JP 2008258418 A JP2008258418 A JP 2008258418A JP 5135501 B2 JP5135501 B2 JP 5135501B2
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- layer
- zno
- single crystal
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000004767 nitrides Chemical class 0.000 title claims description 149
- 239000000758 substrate Substances 0.000 title claims description 80
- 239000013078 crystal Substances 0.000 title claims description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000000034 method Methods 0.000 claims description 57
- 229910052594 sapphire Inorganic materials 0.000 claims description 16
- 239000010980 sapphire Substances 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 10
- 238000000926 separation method Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- G—PHYSICS
- G08—SIGNALLING
- G08G—TRAFFIC CONTROL SYSTEMS
- G08G1/00—Traffic control systems for road vehicles
- G08G1/07—Controlling traffic signals
- G08G1/075—Ramp control
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- G—PHYSICS
- G08—SIGNALLING
- G08G—TRAFFIC CONTROL SYSTEMS
- G08G1/00—Traffic control systems for road vehicles
- G08G1/09—Arrangements for giving variable traffic instructions
- G08G1/095—Traffic lights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
Description
23 ZnO層
24 低温窒化物バッファ層
25 窒化物単結晶
Claims (14)
- 母基板上に酸化膜または窒化膜から成る犠牲層を形成する段階;
前記犠牲層上に前記犠牲層によって前記母基板と離隔する多結晶状のZnO層を形成する段階;
前記ZnO層の下層である前記犠牲層の表面が部分的に露出されるように前記ZnO層を部分的に分解してナノサイズのZnOパターンを形成する段階;
前記ZnOパターンをシードとして窒化物バッファ層を形成する段階;
前記窒化物バッファ層上に窒化物単結晶を成長させる段階;及び、
前記犠牲層を化学的に除去することにより前記母基板から前記窒化物単結晶を分離させる段階
を含む窒化物単結晶基板の製造方法。 - 前記母基板はサファイア、SiC及びシリコン基板からなる群から選ばれた一つから成る請求項1に記載の窒化物単結晶基板の製造方法。
- 前記窒化物バッファ層はAlxGayIn1−x−yNであり、ここで0≦x≦1、0≦y≦1である請求項1又は2に記載の窒化物単結晶基板の製造方法。
- 前記ナノサイズのZnOパターンを形成する段階は、前記窒化物バッファ層の成長温度におけるZnOの熱分解を通して行われる請求項1、2又は3に記載の窒化物単結晶基板の製造方法。
- 前記窒化物バッファ層を形成する段階は400〜700℃の範囲において行われる請求項4に記載の窒化物単結晶基板の製造方法。
- 前記窒化物単結晶を分離する段階は、前記犠牲層と共に前記ZnOパターンを除去する段階であり、これにより前記ZnOパターンの除去された表面が凹凸パターンを有する請求項1〜5のいずれか一項に記載の窒化物単結晶基板の製造方法。
- 母基板上に酸化膜または窒化膜から成る犠牲層を形成する段階;
前記犠牲層上に前記犠牲層によって前記母基板と離隔する多結晶状であるZnO層を形成する段階;
前記ZnO層の下層である前記犠牲層の表面が部分的に露出されるように前記ZnO層を部分的に分解してナノサイズのZnOパターンを形成する段階;
前記ZnOパターンをシードにして第1導電型の窒化物バッファ層を形成する段階;
前記窒化物バッファ層上に第1導電型の窒化物層、活性層及び第2導電型の窒化物層を含む発光構造物を形成する段階;並びに
前記犠牲層を化学的に除去することにより前記母基板から前記発光構造物を分離させる段階
を含む窒化物半導体発光素子の製造方法。 - 前記母基板はサファイア、SiC及びシリコン基板からなる群から選ばれた一つから成る請求項7に記載の窒化物半導体発光素子の製造方法。
- 前記窒化物バッファ層はAlxGayIn1−x−yNであり、ここで0≦x≦1、0≦y≦1である請求項7又は8に記載の窒化物半導体発光素子の製造方法。
- 前記ナノサイズのZnOパターンを形成する段階は、前記窒化物バッファ層の成長温度におけるZnOの熱分解により行われる請求項7、8又は9に記載の窒化物半導体発光素子の製造方法。
- 前記窒化物バッファ層を形成する段階は400〜700℃の範囲において行われる請求項10に記載の窒化物半導体発光素子の製造方法。
- 前記発光構造物を分離する段階は、前記犠牲層と共に前記ZnOパターンを除去する段階であり、これにより前記ZnOパターンが除去された表面が凹凸パターンを有する請求項7〜11のいずれか一項に記載の窒化物半導体発光素子の製造方法。
- 前記犠牲層はシリコン酸化物及びシリコン窒化物で構成された群から選択された物質から成る請求項1に記載の窒化物単結晶基板の製造方法。
- 前記犠牲層はシリコン酸化物及びシリコン窒化物で構成された群から選択された物質から成る請求項7に記載の窒化物半導体発光素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-14424 | 2005-02-22 | ||
KR1020050014424A KR100631905B1 (ko) | 2005-02-22 | 2005-02-22 | 질화물 단결정 기판 제조방법 및 이를 이용한 질화물 반도체 발광소자 제조방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005261255A Division JP2006232655A (ja) | 2005-02-22 | 2005-09-08 | 窒化物単結晶基板の製造方法及びこれを利用した窒化物半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009023909A JP2009023909A (ja) | 2009-02-05 |
JP5135501B2 true JP5135501B2 (ja) | 2013-02-06 |
Family
ID=36913247
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005261255A Pending JP2006232655A (ja) | 2005-02-22 | 2005-09-08 | 窒化物単結晶基板の製造方法及びこれを利用した窒化物半導体発光素子の製造方法 |
JP2008258418A Expired - Fee Related JP5135501B2 (ja) | 2005-02-22 | 2008-10-03 | 窒化物単結晶基板の製造方法及びこれを利用した窒化物半導体発光素子の製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005261255A Pending JP2006232655A (ja) | 2005-02-22 | 2005-09-08 | 窒化物単結晶基板の製造方法及びこれを利用した窒化物半導体発光素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20060189020A1 (ja) |
JP (2) | JP2006232655A (ja) |
KR (1) | KR100631905B1 (ja) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112006002505T5 (de) * | 2005-09-29 | 2008-08-14 | Sumitomo Chemical Co., Ltd. | Verfahren zur Herstellung eines Halbleiters eines Nitrids der Gruppe 3-5 und Verfahren zur Herstellung einer lichtemittierenden Vorrichtung |
WO2007081719A2 (en) | 2006-01-05 | 2007-07-19 | Illumitex, Inc. | Separate optical device for directing light from an led |
KR100867518B1 (ko) | 2006-09-06 | 2008-11-07 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
US20090275157A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device shaping |
WO2008042351A2 (en) | 2006-10-02 | 2008-04-10 | Illumitex, Inc. | Led system and method |
KR100887111B1 (ko) * | 2007-05-07 | 2009-03-04 | 삼성전기주식회사 | 수직구조 반도체 발광소자 제조방법 |
KR100858322B1 (ko) * | 2007-05-30 | 2008-09-11 | (주)웨이브스퀘어 | 수직구조를 갖는 질화갈륨계 led소자의 제조방법 |
US7829358B2 (en) | 2008-02-08 | 2010-11-09 | Illumitex, Inc. | System and method for emitter layer shaping |
JP5205114B2 (ja) * | 2008-04-16 | 2013-06-05 | スタンレー電気株式会社 | 半導体素子の製造方法 |
WO2009148253A2 (ko) * | 2008-06-02 | 2009-12-10 | 고려대학교 산학협력단 | 반도체 발광소자 제조용 지지기판 및 상기 지지기판을 이용한 반도체 발광소자 |
KR20100008656A (ko) | 2008-07-16 | 2010-01-26 | 삼성전자주식회사 | 발광 소자 및 발광 장치의 제조 방법, 상기 제조 방법에의해 제조된 발광 소자 및 발광 장치 |
MY156058A (en) * | 2008-08-01 | 2016-01-15 | Illumitex Inc | Photon tunneling light emitting diodes and methods |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
JP5291499B2 (ja) * | 2009-03-10 | 2013-09-18 | 株式会社沖データ | 半導体複合装置の製造方法 |
TWI471913B (zh) * | 2009-07-02 | 2015-02-01 | Global Wafers Co Ltd | Production method of gallium nitride based compound semiconductor |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
KR101039988B1 (ko) * | 2010-03-09 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
CN101814564B (zh) * | 2010-03-11 | 2013-07-31 | 上海蓝光科技有限公司 | 氮化物外延生长的纳米图形衬底制备方法 |
FR2961948B1 (fr) * | 2010-06-23 | 2012-08-03 | Soitec Silicon On Insulator | Procede de traitement d'une piece en materiau compose |
KR101053116B1 (ko) * | 2011-02-28 | 2011-08-01 | 박건 | 패턴화된 격자 완충층을 이용한 질화물계 발광소자 제조 방법 |
KR101781438B1 (ko) * | 2011-06-14 | 2017-09-25 | 삼성전자주식회사 | 반도체 발광소자의 제조방법 |
TW201300310A (zh) * | 2011-06-28 | 2013-01-01 | Aceplux Optotech Inc | 具有奈米圖案的磊晶基板及發光二極體的製作方法 |
TWI429795B (zh) * | 2011-10-31 | 2014-03-11 | Univ Nat Taiwan | 於氮化鎵上製作氧化鋅之方法與其應用thereof |
US9209358B2 (en) | 2011-12-14 | 2015-12-08 | Seoul Viosys Co., Ltd. | Semiconductor device and method of fabricating the same |
JP5661660B2 (ja) * | 2012-02-07 | 2015-01-28 | 株式会社東芝 | 半導体発光素子 |
JP5668718B2 (ja) * | 2012-04-26 | 2015-02-12 | 信越半導体株式会社 | GaN自立基板の製造方法 |
CN104641453B (zh) * | 2012-10-12 | 2018-03-30 | 住友电气工业株式会社 | Iii族氮化物复合衬底及其制造方法以及制造iii族氮化物半导体器件的方法 |
KR101296263B1 (ko) * | 2012-10-15 | 2013-08-14 | 이상호 | 다양한 분리층 물질을 이용한 레이저 리프트 오프 방법 |
KR101277254B1 (ko) | 2012-10-15 | 2013-06-26 | 이상호 | 실리콘 산화물 및 실리콘 질화물을 버퍼층으로 활용한 전자소자 제조방법 |
KR101328006B1 (ko) * | 2013-06-21 | 2013-11-13 | 한국과학기술원 | 유연성 질화갈륨 발광다이오드 소자 제조방법 및 이에 따라 제조된 유연성 질화갈륨 발광다이오드 소자 |
KR101660364B1 (ko) * | 2013-11-18 | 2016-10-11 | 한국세라믹기술원 | 기판 제조 방법 및 발광 소자 제조 방법 |
US10615222B2 (en) * | 2014-08-21 | 2020-04-07 | The University Of Hong Kong | Flexible GAN light-emitting diodes |
DE102015000451A1 (de) | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Unebener Wafer und Verfahren zum Herstellen eines unebenen Wafers |
KR102354973B1 (ko) * | 2015-06-10 | 2022-01-25 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 및 그 제조방법 |
FR3059147B1 (fr) * | 2016-11-18 | 2019-01-25 | Centre National De La Recherche Scientifique | Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno |
CN111405941B (zh) * | 2017-12-28 | 2022-09-27 | 优美科触媒日本有限公司 | 制氢用催化剂及使用其的废气净化用催化剂 |
CN111628055B (zh) * | 2020-04-20 | 2021-08-17 | 浙江博蓝特半导体科技股份有限公司 | AlGaN基紫外LED外延层及其剥离方法 |
CN111900236A (zh) * | 2020-08-07 | 2020-11-06 | 黄山博蓝特半导体科技有限公司 | 一种高亮度深紫外led芯片结构及其制作方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07273048A (ja) * | 1994-03-31 | 1995-10-20 | Mitsubishi Cable Ind Ltd | 化合物半導体単結晶の製造方法、該化合物半導体の単結晶および単結晶基板の製造方法 |
US5804834A (en) * | 1994-10-28 | 1998-09-08 | Mitsubishi Chemical Corporation | Semiconductor device having contact resistance reducing layer |
JPH08255930A (ja) | 1995-03-16 | 1996-10-01 | Rohm Co Ltd | 半導体発光素子の製法 |
US5985687A (en) * | 1996-04-12 | 1999-11-16 | The Regents Of The University Of California | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials |
JP3214367B2 (ja) * | 1996-08-12 | 2001-10-02 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
JPH10163114A (ja) * | 1996-11-29 | 1998-06-19 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JPH10199815A (ja) | 1997-01-09 | 1998-07-31 | Mitsubishi Cable Ind Ltd | GaN系結晶の製造方法 |
JP3569111B2 (ja) * | 1997-07-14 | 2004-09-22 | 三菱電線工業株式会社 | GaN系結晶基板の製造方法 |
JP3116085B2 (ja) * | 1997-09-16 | 2000-12-11 | 東京農工大学長 | 半導体素子形成法 |
KR100438813B1 (ko) * | 1997-10-24 | 2004-07-16 | 삼성전기주식회사 | 질화갈륨(gan) 웨이퍼 제조방법 |
JP3744155B2 (ja) * | 1997-11-07 | 2006-02-08 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体基板の製造方法 |
US6146916A (en) * | 1997-12-02 | 2000-11-14 | Murata Manufacturing Co., Ltd. | Method for forming a GaN-based semiconductor light emitting device |
JP2001015442A (ja) | 1999-07-02 | 2001-01-19 | Japan Radio Co Ltd | GaN膜及びGaN膜形成方法 |
JP3758537B2 (ja) * | 2001-07-23 | 2006-03-22 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
KR100519641B1 (ko) | 2001-08-08 | 2005-10-07 | 삼성전기주식회사 | InAlGaN계 p-n 다이오드의 제조 방법 |
JP2003224071A (ja) * | 2002-01-29 | 2003-08-08 | Matsushita Electric Ind Co Ltd | 窒化物系半導体の製造方法及びそれを用いた窒化物半導体素子 |
JP2003347231A (ja) | 2002-05-31 | 2003-12-05 | Hitachi Cable Ltd | 化合物半導体の製造方法及び半導体素子 |
US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
JP4438277B2 (ja) | 2002-09-27 | 2010-03-24 | 日亜化学工業株式会社 | 窒化物半導体結晶の成長方法及びそれを用いた素子 |
JP3595829B2 (ja) | 2003-03-19 | 2004-12-02 | 株式会社東北テクノアーチ | GaN基板作製方法 |
US7001791B2 (en) * | 2003-04-14 | 2006-02-21 | University Of Florida | GaN growth on Si using ZnO buffer layer |
CN1823400A (zh) | 2003-07-15 | 2006-08-23 | 财团法人神奈川科学技术研究院 | 氮化物半导体器件及其制备方法 |
JP3700786B2 (ja) * | 2003-12-18 | 2005-09-28 | 株式会社東北テクノアーチ | GaN基板作製方法 |
US7071047B1 (en) * | 2005-01-28 | 2006-07-04 | International Business Machines Corporation | Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions |
-
2005
- 2005-02-22 KR KR1020050014424A patent/KR100631905B1/ko not_active IP Right Cessation
- 2005-08-30 US US11/214,685 patent/US20060189020A1/en not_active Abandoned
- 2005-09-08 JP JP2005261255A patent/JP2006232655A/ja active Pending
-
2008
- 2008-10-03 JP JP2008258418A patent/JP5135501B2/ja not_active Expired - Fee Related
- 2008-12-04 US US12/328,165 patent/US7811902B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7811902B2 (en) | 2010-10-12 |
US20060189020A1 (en) | 2006-08-24 |
US20090087937A1 (en) | 2009-04-02 |
KR100631905B1 (ko) | 2006-10-11 |
KR20060093528A (ko) | 2006-08-25 |
JP2006232655A (ja) | 2006-09-07 |
JP2009023909A (ja) | 2009-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5135501B2 (ja) | 窒化物単結晶基板の製造方法及びこれを利用した窒化物半導体発光素子の製造方法 | |
JP4740903B2 (ja) | シリコン基板上の窒化物単結晶成長方法、これを用いた窒化物半導体発光素子及びその製造方法 | |
JP4048191B2 (ja) | 窒化物半導体発光素子及びその製造方法 | |
JP5371430B2 (ja) | 半導体基板並びにハイドライド気相成長法により自立半導体基板を製造するための方法及びそれに使用されるマスク層 | |
JP3821232B2 (ja) | エピタキシャル成長用多孔質基板およびその製造方法ならびにiii族窒化物半導体基板の製造方法 | |
JP5244487B2 (ja) | 窒化ガリウム成長用基板及び窒化ガリウム基板の製造方法 | |
CN102593293A (zh) | 模板、其制造方法以及制造半导体发光器件的方法 | |
JP4231189B2 (ja) | Iii族窒化物系化合物半導体基板の製造方法 | |
JP2008034834A6 (ja) | シリコン基板上の窒化物単結晶成長方法、これを用いた窒化物半導体発光素子及びその製造方法 | |
TWI407491B (zh) | 分離半導體及其基板之方法 | |
JP2005123619A (ja) | シリコン基板上に形成された窒化物半導体及びその製造方法 | |
JP2007294518A (ja) | 窒化物系半導体基板及びその製造方法並びに窒化物系半導体発光デバイス用エピタキシャル基板 | |
US6648966B2 (en) | Wafer produced thereby, and associated methods and devices using the wafer | |
JP2006310850A (ja) | 窒化ガリウム系半導体の製造方法 | |
JP2009067658A (ja) | 窒化物半導体下地基板、窒化物半導体積層基板および窒化物半導体自立基板、並びに窒化物半導体下地基板の製造方法 | |
JP2005183997A (ja) | 発光素子用窒化物半導体テンプレートおよびその製造方法 | |
KR100450781B1 (ko) | Gan단결정제조방법 | |
JP4693361B2 (ja) | 窒化ガリウム系単結晶基板の製造方法 | |
US20050186757A1 (en) | Method for lift off GaN pseudomask epitaxy layer using wafer bonding way | |
US20140159081A1 (en) | Method of forming semiconductor layer and semiconductor light emitting device | |
JP2009084136A (ja) | 半導体デバイスの製造方法 | |
JP5946333B2 (ja) | Iii族窒化物半導体デバイス及びその製造方法 | |
JP2002299254A (ja) | 半導体基板の製造方法及び半導体素子 | |
JP2003171200A (ja) | 化合物半導体の結晶成長法、及び化合物半導体装置 | |
US20080035052A1 (en) | Method for manufacturing a semiconductor substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20091126 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20100107 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100108 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100930 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101021 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20101028 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120207 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120507 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120724 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120813 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120814 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120814 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151122 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151122 Year of fee payment: 3 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D04 |
|
LAPS | Cancellation because of no payment of annual fees |