CN102593293A - 模板、其制造方法以及制造半导体发光器件的方法 - Google Patents
模板、其制造方法以及制造半导体发光器件的方法 Download PDFInfo
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Abstract
本发明公开了一种制造模板的方法。所述方法包括:在基底上生长第一氮化物层;通过将氯化物基刻蚀气体供给到所述第一氮化物层的顶面来刻蚀所述第一氮化物层的顶面;通过在第一氮化物层的顶面上生长第二氮化物层来形成多个第一空隙;通过将刻蚀气体供给到所述第二氮化物层的顶面来刻蚀第二氮化物层的顶面;以及通过在第二氮化物层的顶面上生长第三氮化物层来形成多个第二空隙。还公开了一种利用模板制造氮化物基半导体发光器件的方法。因此,晶格间应力和错位缺陷由于氮化物缓冲层中形成的多个空隙而减少,从而改善了模板中生长的多个氮化物层的质量。在利用模板制造发光器件的情况下,可以使制造过程更容易,并且提高发光器件的发光效率。
Description
技术领域
本发明涉及一种利用模板制造氮化物基半导体发光器件的技术。
背景技术
由于氮化物基半导体发光器件具有寿命长、功耗低、初始驱动特性极好、抗振性强等多种优点,对其需求与日俱增。
一般而言,氮化物基半导体发光器件包括多个氮化物层,这些氮化物层包括n型氮化物层、活性层和p型氮化物层。其中,n型和p型氮化物层为活性层提供电子和空穴,从而通过电子与空穴在该活性层中的再结合发出光。
然而,诸如蓝宝石(Al2O3)等材料制成的基底的晶格常数通常与氮化物层的不同,因此当在基底上直接生长氮化物层时会发生严重的晶格畸变。因此,近年来提出了一种减少氮化物层生长过程中晶格畸变的方法,该方法利用了一种具有沉积在基底上的未掺杂氮化物层的模板。然而,即使利用这种方法,错位密度仍然在109到1010/cm2,所以其对改善氮化物层晶体质量的作用有限。
最近,已经提出了一种生长技术来减少错位密度,例如横向外延过生长(epitaxial lateral overgrowth,ELO)。在这种技术中,在其上沉积有未掺杂氮化物层的模板上形成具有图案的SiO2掩模,然后从掩模的开口生长氮化物层,从而引起掩模上的横向生长。然而,由于该生长技术包括基于化学气相沉积(CVD)的SiO2膜沉积、涂光刻胶、光刻、刻蚀和清洗等步骤,因此制造过程繁琐,花费时间很多。
发明内容
本发明的一个方面是提供一种制造模板的方法以及一种利用该模板制造氮化物基半导体发光器件的方法,其中在基底上形成具有多孔结构的氮化物缓冲层,从而减少由于基底与氮化物层晶格常数的差异造成的应力,同时防止错位的发生。
根据本发明的一个方面,一种制造模板的方法,包括:在基底上生长第一氮化物层;通过向第一氮化物层的顶面供给氯化物基刻蚀气体来刻蚀第一氮化物层的顶面;通过在第一氮化物层的顶面上生长第二氮化物层来形成多个第一空隙;通过向第二氮化物层的顶面供给所述刻蚀气体来刻蚀第二氮化物层的顶面;以及通过在第二氮化物层的顶面上生长第三氮化物层来形成多个第二空隙。
根据本发明的另一个方面,一种制造垂直型氮化物基半导体发光器件的方法,包括:通过多次重复生长氮化物层的过程和刻蚀过程,在生长基底上生长具有多个空隙的氮化物缓冲层;在所述氮化物缓冲层上生长n型氮化物层、活性层和p型氮化物层;在所述p型氮化物层上形成导电基底;利用形成所述多个空隙的部分作为切割表面去除所述生长基底;以及通过处理所述切割表面来形成电极极板。
附图说明
通过以下结合附图对实施例的详细说明,将使本发明的上述及其他方面、特征和优点更加清晰,在附图中:
图1是根据本发明示例性实施例的模板的剖视图;
图2是制造图1的模板的过程的流程图;
图3是说明图2的模板制造过程的剖面示意图;
图4是示出通过进行图3中的初级刻蚀过程获得的第一氮化物层的顶面的扫描式电子显微镜(SEM)照片;
图5是示出图1的模板的横截面的SEM照片;
图6是利用根据本发明示例性实施例的模板制造的横向型氮化物基半导体发光器件的剖视图;
图7是利用根据本发明示例性实施例的模板制造的垂直型氮化物基半导体发光器件的剖视图。
具体实施方式
以下将参照附图具体描述本发明的示例性实施例。在以下实施例中,主要描述用于制造发光器件的模板。然而,本发明不限于此,但可以应用于用来生长氮化物层的各种模板。
应该理解的是,当诸如层、膜、区域或基底的一个元件被称作位于另一元件“之上”时,可以是该元件直接位于另一元件之上,也可以是存在插入的元件。相反,当一个元件被称作“直接”位于另一元件“之上”时,则不存在插入的元件。
图1是根据本发明示例性实施例的模板10的剖视图。
如图1所示,根据本实施例的模板10包括基底100及在基底100上生长的氮化物缓冲层200。氮化物缓冲层200具有多孔结构,该多孔结构中形成有多个空隙213、223,并且在氮化物缓冲层200上可以生长和堆叠其他氮化物层。
基底100限定了一个基面,氮化物层开始在其上生长。该基底100是由适合氮化物层的晶格生长的材料制成的。在本实施例中,将蓝宝石(Al2O3)基底用作基底100。这里,该蓝宝石基底具有六角形结构,并且在高温下稳定。此外,可以使用由诸如尖晶石(MgAlO4)、碳化硅(SiC)、硅(Si)、氧化锌(ZnO)、砷化镓(AsGa)或者氮化镓(GaN)等材料制成的基底。
在蓝宝石基底100上形成氮化物缓冲层200。在本实施例中,利用与蓝宝石基底100一样具有六角系结构的GaN层构建氮化物缓冲层200。或者,可以利用第III族氮化物层构建氮化物缓冲层200。
氮化物缓冲层200形成为堆叠有多个由GaN材料制成的氮化物层的结构。氮化物缓冲层200是在蓝宝石基底100上生长氮化物层时,通过刻蚀氮化物层之一的顶面,继而在该氮化物层上生长另一氮化物层而形成的。因此,氮化物缓冲层200设置有多个空隙213和223,这些空隙形成在邻近各氮化物层之间的界面的部分处。
在本实施例中,氮化物缓冲层200包括第一氮化物层210、第二氮化物层220和第三氮化物层230。多个第一空隙213形成在邻近第一氮化物层210与第二氮化物层220之间的界面的部分处,多个第二空隙形成在邻近第二氮化物层220与第三氮化物层230之间的界面的部分处。
因此,如图1所示,在第一空隙213的上方形成第二空隙223,从而可以形成在其中多个空隙排列为两层结构的结构。而且,第二空隙223与先前形成的第一空隙213在部分位置组合在一起,从而可以形成大尺寸的空隙结构。
图2是制造图1的模板的过程的流程图,图3是说明图2的模板制造过程的剖面示意图。下文中,将参照图2和图3详细描述生长氮化物缓冲层200的方法。
如图3(a)所示,在S10中,第一氮化物层210在蓝宝石基底100上生长成0.2到10μm厚。该操作可以利用金属有机化学气相沉积(MOCVD)装置、氢化物气相外延(hydride vapor phase epitaxy,HVPE)装置或者分子束外延(molecular beam epitaxy,MBE)装置来完成。在本实施例中,采用了MOCVD装置,以确保氮化物层的晶格能够令人满意地生长。
在本实施例中,将蓝宝石基底100放置在MOCVD装置内,并将三甲基镓(TMGa)和氨(NH3)连同作为载气的氢气(H2)一起供给到MOCVD装置中,由此生长出由未掺杂GaN(u-GaN)材料制成的第一氮化物层210。在该生长过程的初始阶段,通过在500到700℃低温下保持大约10到30分钟,生长20nmu-GaN层,来形成缓冲层,然后通过升温到1000到1200℃,将该u-GaN层又生长到大约2μm厚。第一氮化物层由此形成。
在生长了第一氮化物层210之后,将基底100从MOCVD装置转移到HVPE装置,HVPE装置的内部温度升高到800℃或更高。然后,在S20中,通过将氯化物基气体和氨(NH3)供给到HVPE装置中来进行初级刻蚀过程。在本实施例中,将氯化氢(HCl)用作氯化物基气体的一个实例。这里,即使在仅供给氯化氢(HCl)或仅供给氨(NH3)气时,也能获得刻蚀第一氮化物层的效果。然而,该氮化物层未被刻蚀处的结构会变得不稳定。因此,可以以1000sccm或更小的速率将氯化氢(HCl)气和以100到2000sccm的速率将氨(NH3)气供给到该HVPE装置中。在本实施例中,通过以300sccm的速率供给氯化氢(HCl)气并且以1000sccm的速率供给氨(NH3)气来进行刻蚀。
图4是示出在前述过程条件下初级刻蚀过程进行了15分钟之后的第一氮化物层顶面的SEM照片。如图4所示,随着通过第一刻蚀过程在第一氮化物层210的上部向下进行各向异性刻蚀,在第一氮化物层210被充分进行刻蚀的位置形成了多个第一低谷结构212,而在第一氮化物层210未被充分进行刻蚀的位置形成了多个柱状的第一纳米结构211。
通过调整氯化氢(HCl)气和氨(NH3)气的混合比和供给量以及进行刻蚀的时间,可以控制刻蚀过程中形成的纳米结构和低谷结构的尺寸和图案。该刻蚀过程可以进行5到30分钟。
通过初级刻蚀过程在第一氮化物层210的上部形成了多个第一纳米结构211和多个第一低谷结构212之后,在第一氮化物层210的上部生长第二氮化物层220(S30)。可以利用MOCVD装置、HVPE装置、MBE装置等进行第二氮化物层220的生长。在本实施例中,利用HVPE装置生长第二氮化物层220。在这种情况下,通过将生长第二氮化物层220的过程连同初级刻蚀过程以及随后的次级刻蚀过程一起就地在HVPE装置中进行,能够简化制造过程。
在完成了初级刻蚀过程之后,将MOCVD装置内部的温度升高到1000到1300℃,然后将氯化镓(GaCl)气和氨(NH3)气供给到MOCVD装置的过程空间。使氯化氢(HCl)气经过含有镓源的镓舟,通过氯化氢(HCl)气与镓的反应生成氯化镓(GaCl)气。
在这个过程中,在第一氮化物层210的上部,通过氯化镓(GaCl)气与氨(NH3)气的之间的反应形成了由GaN材料制成的第二氮化物层220。如图3(c)所示,在第一纳米结构211上部生长第二氮化物层220,同时形成屋顶结构,并且与第一低谷结构212和第一纳米结构211一起形成多个第一空隙213。
同时,在完成了第二氮化物层220的生长之后,在第二氮化物层220上进行次级刻蚀过程(S40)。如上所述,次级刻蚀过程是在HVPE装置中就地进行的。在次级刻蚀过程中,和初级刻蚀过程一样,在HVPE装置的内部温度保持在800℃或更高的状态下,将氯化物基气体(本实施例中采用氯化氢气体)和氨(NH3)气供给到HVPE装置中。随着各向异性刻蚀的进行,在第二氮化物层220顶面进一步被刻蚀的位置形成了向下凹陷形状的多个第二低谷结构222,并且在第二氮化物层220顶面未被进一步刻蚀的位置形成了柱状的多个第二纳米结构221。
如图3(d)所示,在相对弱地进行了第二刻蚀过程的位置,进行各向异性刻蚀所达到的深度比在第一空隙上方形成屋顶的第二氮化物层的厚度浅(参见区域C),因此,第二低谷结构222和第二纳米结构221可以形成在第一空隙213上方。
随着在第一空隙213上部形成屋顶的第二氮化物层220被刻蚀,在相对强地进行了次级刻蚀过程的位置,先前形成的第一空隙213向上打开(参见区域B)。因此,在所述位置,次级刻蚀过程中形成的第二低谷结构222能够形成为具有相对大的宽度和深度,同时包括先前形成的第一空隙213的区域。
如上所述,在形成第一空隙213的情况下进行次级刻蚀过程,并且由此可以根据进行刻蚀的程度来形成不同的结构。因此,通过控制第二氮化物层220的生长厚度、进行次级刻蚀过程的持续时间以及次级刻蚀过程中刻蚀气体的流速等,能够形成形状各异的结构。
在次级刻蚀过程完成之后,进行冷却基底100预定时间的操作。在HVPE装置中通过自然冷却来进行该冷却操作,并且通过该过程能够稳定基底上生长的氮化物层。该冷却操作可以进行15到60分钟。在本实施例中,自然冷却进行30分钟。
随后,将基底100从HVPE装置转移到MOCVD装置,以生长第三氮化物层230。可以在除MOCVD装置之外的装置中生长第三氮化物层230。然而,在本实施例中,第三氮化物层230形成氮化物缓冲层200的上部结构,因此采用MOCVD装置可获得令人满意的晶格生长。
首先将基底100放置在MOCVD装置内,然后通过驱动加热器来升高过程空间的温度,从而形成第三氮化物层230的生长环境。可以将氨(NH3)气连续地供给到MOCVD装置,同时升高过程空间的温度。如上所述,由于氨(NH3)气被供给到MOCVD装置,因此可以防止温度升高过程中先前生长的第一氮化物层210和第二氮化物层220产生裂纹,并且可以去除基底100的转移操作中在第二氮化物层220上形成的氧化物膜。
如果MOCVD装置的温度得到充分升高,则通过将三甲基镓(TMGa)和氨(NH3)气连同作为载气的氢气(H2)一同供给到MOCVD装置中,生长由GaN材料制成的第三氮化物层230。
在该过程的初始阶段,与一般的GaN生长环境相比,可以形成相对低压和高温的环境,由此可以在第二氮化物层220的纳米结构221的上部进行水平生长。因此,在本实施例中,在1150到1250℃的高温以及200mb或更低的低压环境下,通过从第二纳米结构221的上部沿着水平方向生长第三氮化物层230来形成屋顶结构。通过将过程环境控制为温度在1000到1200℃、压强在300mb或更大,使得GaN层垂直生长到大约1到5μm。氮化物缓冲层200的上部结构由此形成。
如图3(e)所示,通过该过程,第三氮化物层230连同第二纳米结构221和第二低谷结构222一起形成了多个第二空隙223。依照通过次级刻蚀过程形成的第二低谷结构222,可以形成多种形状的第二空隙223。
第二空隙223形成在第一空隙213上部形成第二低谷结构的位置处的第一空隙213的上方(参见区域C)。即,邻近第一氮化物层210与第二氮化物层220之间的界面形成第一空隙213,并且邻近第二氮化物层220与第三氮化物层230之间的界面形成第二空隙223,由此形成空隙以两层排列的结构。
另一方面,在第二低谷结构延伸到先前形成有第一空隙213的空间的位置处,第二空隙223形成为与先前形成第一空隙213的区域组合在一起(参见区域B)。因此,如图3(e)所示,与未和第一空隙213组合在一起的其他空隙213相比,如上所述形成的第二空隙223形成为更大的尺寸。
图5是示出由图2的方法制造的氮化物缓冲层的横截面的SEM照片。如图5所示,通过多次进行生长氮化物层的过程以及刻蚀氮化物层的过程,氮化物缓冲层200中可以形成有不同结构的空隙213和223。
空隙的结构可以减少由于氮化物层与蓝宝石基底之间晶格常数和热膨胀的不同而造成的应力。而且,由于空隙的结构消除了邻近基底100的氮化物层中产生的错位,由此可以防止错位蔓延到氮化物层的上部。特别是,在多个空隙被布置为堆叠排列的结构中,上部的空隙防止一些错位经过下部空隙蔓延,由此加倍阻止了错位的蔓延。
实际上,通过测量根据本实施例所生长的氮化物缓冲层所获得的结果是,即使在氮化物缓冲层为2到4μm厚时,所测得的错位为约106/cm2,这表明,与常规氮化物缓冲层相比,氮化物缓冲层的错位密度降低了1%或更多。
因此,根据本发明实施例的模板具有其中的应力减少并且错位密度降低的氮化物缓冲层,从而可以生长出氮化物缓冲层顶面的晶体质量令人满意的发光器件氮化物层,以及制造出实验结果表明与常规发光器件相比发光效率提高了30到40%的发光器件。
同时,在前面的实施例中,已经描述了包括空隙被布置为堆叠排列在一个氮化物缓冲层中的结构以及具有大尺寸空隙的结构的配置。然而,这仅仅是为了便于说明而给出的实例,本发明并不限于此。也就是说,通过控制第二氮化物层的生长厚度、进行次级刻蚀过程的持续时间、刻蚀气体的流速等,可以形成各种结构的空隙。在本实施例中,刻蚀过程进行了两次。然而,刻蚀过程和生长氮化物层的过程可以重复进行三次或更多次。
在根据本发明实施例的模板中,如上所述可以在氮化物缓冲层的顶面上生长发光器件的氮化物层。图6是利用根据本发明示例性实施例的模板的横向型氮化物基半导体的剖视图。
如图6所示,垂直的氮化物基半导体发光器件20的结构为n型氮化物层310、活性层320和p型氮化物层330顺序地堆叠在模板10上。因此,在MOCVD装置中生长氮化物缓冲层200的第三氮化物层230,并且可以通过连续的过程生长发光器件的氮化物层。
在如本实施例中所述的利用未掺杂GaN材料生长第一氮化物层210、第二氮化物层220和第三氮化物层230的情况下,通过控制温度和过程气体来生长第三氮化物层230并且顺序地生长n型氮化物层310、活性层320和p型氮化物层330。
或者,在进行了次级刻蚀过程之后,可以生长n型氮化物层作为第三氮化物层230,然后可以在该n型氮化物层上额外地生长活性层和p型氮化物层。
如上所述,在根据本实施例的横向型氮化物基半导体发光器件20中,在邻近基底100的氮化物层中形成多个空隙,由此降低了氮化物层的应力和错位密度。因此,可以改善内部量子效率以及防止极化。
空隙具有与相邻的氮化物层不同的折射率。因此,朝基底传播的光在经过所述多个空隙时被散射或折射,使得光路改变。由此可以改善发光器件的光提取效率。
同时,根据本发明实施例的模板还可以应用于垂直的氮化物基半导体发光器件。图7示意性地示出了利用根据本发明示例性实施例的模板制造垂直的氮化物基发光器件的方法。
和上面描述的模板制造方法相似,通过重复生长氮化物层的过程和刻蚀氮化物层的过程,在生长基底上生长具有多孔结构的氮化物缓冲层200。然后,直接在刻蚀过程所形成的纳米结构上生长n型氮化物层410、活性层420和p型氮化物层430。该氮化物缓冲层是第三氮化物层,并且可以在该氮化物缓冲层上生长n型氮化物层。在未掺杂氮化物层与n型氮化物层之间的边界处布置多个空隙(参见图7(a))。
在多层氮化物层的生长完成之后,在p型氮化物层430上形成导电粘结层440,并且将导电基底450附着到导电粘结层440。这里,导电基底450与外部电路电连接从而形成p侧电极。
接着,进行从氮化物层上去除生长基底100的操作(参见图7(b))。由于氮化物缓冲层以纳米结构的形式存在,其中形成有多个空隙213、223的区域与其他氮化物层相比具有相对弱的结构。因此,利用所述多个空隙213、223的形成位置作为表面牺牲层,可以容易地将生长基底100与氮化物层分离。特别是,在如制造模板的方法中所述的通过多次进行刻蚀过程形成了大尺寸空隙的情况下,表面牺牲层的结构更弱,因此生长基底的分离可以更容易地进行。
可以采用激光剥离(laser lift-off,LLO)过程,通过用激光照射邻近生长基底100的氮化物层,来去除基底。常规情况是,由于氮化物层构成了强晶格结构,因此在激光照射时氮化物层严重受损,从而降低了产率。然而,根据本发明,用激光照射由于存在多个空隙213、223而结构相对弱的位置,从而可以最小化对氮化物层的损坏。
除上述LLO过程之外,可以通过控制氮化物层和生长基底100的温度,将生长基底100与氮化物层分离。因为氮化物层与蓝宝石制成的生长基底之间的热膨胀系数相差很大,所以从氮化物层在生长基底上生长时的高温开始进行冷却,使得在氮化物层中由于热形变产生很大的应力。在试验结果中,随着生长基底被冷却,沿着形成所述多个空隙的部分产生裂纹,通过向该部分额外提供少量的能量便可将生长基底与氮化物层分离。
如上所述,在根据本发明实施例的发光器件中,基于形成多个空隙的位置,可以容易地将生长基底与氮化物层分离。而且,因为在分离生长基底时施加到氮化物层的应力变化相对小,所以与常规发光器件相比,可以形成质量令人满意的自支撑层(freestanding layer)。
同时,在分离了生长基底100之后,进行处理表面牺牲层以暴露n型氮化物层410的操作,以形成电极极板460。常规上难以在决定处理表面牺牲层时决定是否暴露n型氮化物层410的同时进行这个操作。然而,根据本发明,因为表面牺牲层形成在未掺杂氮化物层与n型氮化物层410的边界处,所以能够容易地进行该操作。
如上所述,可以形成质量令人满意的氮化物层,并且提供了一种制造更容易、发光效率和寿命优异的发光器件。
因此,根据各个实施例,通过未掺杂氮化物层中所形成的多个空隙能够减少晶格间应力和错位缺陷,由此提高模板上额外生长的氮化物层的质量。
而且,当利用该模板制造发光器件时,可以使制造过程更加容易,并且增强发光器件的发光效率。
尽管本文中描述了一些实施例,但本领域技术人员应当明白,这些实施例仅是为了阐述而给出的,在不背离发明精神和范围的前提下可以进行各种修改、变型和替换。因此,本发明的范围仅应由权利要求书及其等价物来限定。
Claims (15)
1.一种包含氮化物缓冲层的模板,包括:
基底;以及
氮化物缓冲层,所述氮化物缓冲层形成在所述基底上以具有沿多条线堆叠和排列的多个空隙。
2.一种制造包含氮化物缓冲层的模板的方法,包括:
在基底上生长第一氮化物层;
通过将氯化物基刻蚀气体供给到所述第一氮化物层的顶面来刻蚀所述第一氮化物层的顶面;
通过在所述第一氮化物层的顶面上生长第二氮化物层来形成多个第一空隙;
通过将刻蚀气体供给到所述第二氮化物层的顶面来刻蚀所述第二氮化物层的顶面;以及
通过在所述第二氮化物层的顶面上生长第三氮化物层来形成多个第二空隙。
3.根据权利要求2所述的方法,其特征在于,在金属有机化学气相沉积(MOCVD)装置中生长第一氮化物层和第三氮化物层。
4.根据权利要求3所述的方法,其特征在于,在氢化物气相外延(HVPE)装置中生长第二氮化物层。
5.根据权利要求2所述的方法,其特征在于,所述多个第二空隙被布置为堆叠排列在所述多个第一空隙之上。
6.根据权利要求5所述的方法,其特征在于,进行刻蚀所述第二氮化物层所达到的深度比所述第二氮化物层的厚度浅。
7.根据权利要求5所述的方法,其特征在于,邻近所述第一与第二氮化物层之间的界面形成所述多个第一空隙,并且邻近所述第二与第三氮化物层之间的界面形成所述多个第二空隙。
8.根据权利要求2所述的方法,其特征在于,从所述第二氮化物层的顶面刻蚀所述第二氮化物层以与所述第一空隙相连通。
9.根据权利要求8所述的方法,其特征在于,所述第二空隙比所述第一空隙大。
10.一种利用包含氮化物缓冲层的模板来制造垂直型氮化物基半导体发光器件的方法,包括:
通过重复两次或更多次生长氮化物层的过程和刻蚀过程,在生长基底上生长具有多个空隙的氮化物缓冲层;
在所述氮化物缓冲层上生长n型氮化物层、活性层和p型氮化物层;
在所述p型氮化物层上形成导电基底;
利用形成所述多个空隙的部分作为切割表面去除所述生长基底;以及
通过处理所述切割表面形成电极极板。
11.根据权利要求10所述的方法,其特征在于,生长所述氮化物缓冲层包括:
在所述生长基底上生长第一氮化物层;
通过将刻蚀气体供给到所述第一氮化物层的顶面来刻蚀所述第一氮化物层的顶面;
通过在所述第一氮化物层的顶面上生长第二氮化物层来形成多个第一空隙;
通过将所述刻蚀气体供给到所述第二氮化物层的顶面来刻蚀所述第二氮化物层的顶面;以及
通过在所述第二氮化物层的顶面上生长第三氮化物层来形成多个第二空隙。
12.根据权利要求11所述的方法,其特征在于,在MOCVD装置中生长所述第一氮化物层和第三氮化物层,以及在HVPE装置中生长所述第二氮化物层。
13.根据权利要求10所述的方法,其特征在于,通过在所述氮化物缓冲层中形成至少两行,使所述多个空隙被布置为堆叠排列。
14.根据权利要求10所述的方法,其特征在于,去除所述生长基底包括用激光照射其中形成有所述多个空隙的部分。
15.根据权利要求10所述的方法,其特征在于,去除所述生长基底包括冷却所述氮化物缓冲层,从而在其中形成有所述多个空隙的部分产生裂纹。
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US20080099781A1 (en) * | 2006-10-31 | 2008-05-01 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing III group nitride semiconductor thin film and method of manufacturing III group nitride semiconductor device using the same |
US20100019269A1 (en) * | 2008-07-25 | 2010-01-28 | Tae-Geun Kim | Light-emitting device and method of manufacturing the same |
US20100124814A1 (en) * | 2008-11-14 | 2010-05-20 | Chantal Arena | Methods for improving the quality of structures comprising semiconductor materials |
JP2010147164A (ja) * | 2008-12-17 | 2010-07-01 | Stanley Electric Co Ltd | 半導体素子の製造方法 |
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JP2005085851A (ja) * | 2003-09-05 | 2005-03-31 | Hitachi Cable Ltd | 窒化物系化合物半導体発光素子の製造方法 |
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US20060270201A1 (en) * | 2005-05-13 | 2006-11-30 | Chua Soo J | Nano-air-bridged lateral overgrowth of GaN semiconductor layer |
US7777217B2 (en) * | 2005-12-12 | 2010-08-17 | Kyma Technologies, Inc. | Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same |
JP5187610B2 (ja) * | 2006-03-29 | 2013-04-24 | スタンレー電気株式会社 | 窒化物半導体ウエハないし窒化物半導体装置及びその製造方法 |
JP5307975B2 (ja) * | 2006-04-21 | 2013-10-02 | 日立電線株式会社 | 窒化物系半導体自立基板及び窒化物系半導体発光デバイス用エピタキシャル基板 |
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- 2011-05-25 EP EP11167417.2A patent/EP2472566A3/en not_active Withdrawn
- 2011-06-03 WO PCT/KR2011/004063 patent/WO2012093758A1/ko active Application Filing
- 2011-06-15 CN CN2011101610129A patent/CN102593293A/zh active Pending
- 2011-06-22 JP JP2011138929A patent/JP2012142545A/ja not_active Withdrawn
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US20080099781A1 (en) * | 2006-10-31 | 2008-05-01 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing III group nitride semiconductor thin film and method of manufacturing III group nitride semiconductor device using the same |
US20100019269A1 (en) * | 2008-07-25 | 2010-01-28 | Tae-Geun Kim | Light-emitting device and method of manufacturing the same |
US20100124814A1 (en) * | 2008-11-14 | 2010-05-20 | Chantal Arena | Methods for improving the quality of structures comprising semiconductor materials |
JP2010147164A (ja) * | 2008-12-17 | 2010-07-01 | Stanley Electric Co Ltd | 半導体素子の製造方法 |
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CN105762065A (zh) * | 2016-02-06 | 2016-07-13 | 上海新傲科技股份有限公司 | 一种高晶体质量的氮化物外延生长的方法 |
CN105762065B (zh) * | 2016-02-06 | 2019-12-13 | 上海新傲科技股份有限公司 | 一种高晶体质量的氮化物外延生长的方法 |
CN114203535A (zh) * | 2021-12-09 | 2022-03-18 | 北京镓纳光电科技有限公司 | 高质量氮化铝模板及其制备方法和应用 |
CN114203535B (zh) * | 2021-12-09 | 2023-01-31 | 北京镓纳光电科技有限公司 | 高质量氮化铝模板及其制备方法和应用 |
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KR20120079393A (ko) | 2012-07-12 |
TW201234645A (en) | 2012-08-16 |
WO2012093758A1 (ko) | 2012-07-12 |
EP2472566A2 (en) | 2012-07-04 |
EP2472566A3 (en) | 2013-04-17 |
JP2012142545A (ja) | 2012-07-26 |
US20120187444A1 (en) | 2012-07-26 |
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