JP5118982B2 - 半導体モジュールおよびその製造方法 - Google Patents

半導体モジュールおよびその製造方法 Download PDF

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Publication number
JP5118982B2
JP5118982B2 JP2008013191A JP2008013191A JP5118982B2 JP 5118982 B2 JP5118982 B2 JP 5118982B2 JP 2008013191 A JP2008013191 A JP 2008013191A JP 2008013191 A JP2008013191 A JP 2008013191A JP 5118982 B2 JP5118982 B2 JP 5118982B2
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Japan
Prior art keywords
protrusion
semiconductor module
insulating layer
region
electrode
Prior art date
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Application number
JP2008013191A
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English (en)
Japanese (ja)
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JP2008277742A (ja
JP2008277742A5 (enExample
Inventor
康行 柳瀬
芳央 岡山
清司 柴田
恭典 井上
秀樹 水原
良輔 臼井
哲也 山本
益良男 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2008013191A priority Critical patent/JP5118982B2/ja
Priority to US12/022,865 priority patent/US7855452B2/en
Priority to CN2011101894506A priority patent/CN102254874A/zh
Priority to CN2008101428105A priority patent/CN101312169B/zh
Publication of JP2008277742A publication Critical patent/JP2008277742A/ja
Priority to US12/961,171 priority patent/US8338946B2/en
Publication of JP2008277742A5 publication Critical patent/JP2008277742A5/ja
Application granted granted Critical
Publication of JP5118982B2 publication Critical patent/JP5118982B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0236—Shape of the insulating layers therebetween
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP2008013191A 2007-01-31 2008-01-23 半導体モジュールおよびその製造方法 Active JP5118982B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008013191A JP5118982B2 (ja) 2007-01-31 2008-01-23 半導体モジュールおよびその製造方法
US12/022,865 US7855452B2 (en) 2007-01-31 2008-01-30 Semiconductor module, method of manufacturing semiconductor module, and mobile device
CN2011101894506A CN102254874A (zh) 2007-01-31 2008-01-31 半导体模块、半导体模块的制造方法以及便携式设备
CN2008101428105A CN101312169B (zh) 2007-01-31 2008-01-31 半导体模块、半导体模块的制造方法以及便携式设备
US12/961,171 US8338946B2 (en) 2007-01-31 2010-12-06 Semiconductor module, method of manufacturing semiconductor module, and mobile device

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007020540 2007-01-31
JP2007020540 2007-01-31
JP2007090375 2007-03-30
JP2007090375 2007-03-30
JP2008013191A JP5118982B2 (ja) 2007-01-31 2008-01-23 半導体モジュールおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2008277742A JP2008277742A (ja) 2008-11-13
JP2008277742A5 JP2008277742A5 (enExample) 2011-03-03
JP5118982B2 true JP5118982B2 (ja) 2013-01-16

Family

ID=40055300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008013191A Active JP5118982B2 (ja) 2007-01-31 2008-01-23 半導体モジュールおよびその製造方法

Country Status (2)

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JP (1) JP5118982B2 (enExample)
CN (2) CN101312169B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4972633B2 (ja) * 2008-12-11 2012-07-11 日東電工株式会社 半導体装置の製造方法
JP2010199148A (ja) * 2009-02-23 2010-09-09 Fujikura Ltd 半導体センサデバイス及びその製造方法、パッケージ及びその製造方法、モジュール及びその製造方法、並びに電子機器
JP2010238996A (ja) * 2009-03-31 2010-10-21 Sanyo Electric Co Ltd 半導体モジュールの製造方法
JP5830702B2 (ja) 2010-04-28 2015-12-09 パナソニックＩｐマネジメント株式会社 回路装置の製造方法
JP5607994B2 (ja) * 2010-06-15 2014-10-15 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびその製造方法
WO2014132937A1 (ja) 2013-02-28 2014-09-04 株式会社村田製作所 Ｅｓｄ保護デバイス
CN105051887B (zh) 2013-02-28 2018-04-17 株式会社村田制作所 半导体装置
JP6102398B2 (ja) * 2013-03-26 2017-03-29 セイコーエプソン株式会社 半導体装置
WO2014162795A1 (ja) 2013-04-05 2014-10-09 株式会社村田製作所 Ｅｓｄ保護デバイス
CN106252315B (zh) * 2015-06-13 2019-07-02 中芯国际集成电路制造(上海)有限公司 封装结构及其制造方法
WO2018198199A1 (ja) * 2017-04-25 2018-11-01 三菱電機株式会社 半導体装置
JP7088224B2 (ja) * 2019-03-19 2022-06-21 株式会社デンソー 半導体モジュールおよびこれに用いられる半導体装置
KR102727977B1 (ko) * 2019-11-14 2024-11-07 현대자동차주식회사 전력모듈에 적용되는 기판 구조
CN113078149B (zh) * 2021-03-12 2023-11-10 上海易卜半导体有限公司 半导体封装结构、方法、器件和电子产品

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223287A (ja) * 2000-02-07 2001-08-17 Mitsui High Tec Inc インターポーザーの製造方法
JP2002170839A (ja) * 2000-11-30 2002-06-14 Nec Corp 半導体装置とその製造方法及び半導体装置の実装構造とその実装方法
JP3767398B2 (ja) * 2001-03-19 2006-04-19 カシオ計算機株式会社 半導体装置およびその製造方法
JP2002313992A (ja) * 2001-04-16 2002-10-25 Sharp Corp 半導体装置およびその製造方法
JP4397583B2 (ja) * 2002-12-24 2010-01-13 株式会社フジクラ 半導体装置

Also Published As

Publication number Publication date
CN102254874A (zh) 2011-11-23
CN101312169A (zh) 2008-11-26
JP2008277742A (ja) 2008-11-13
CN101312169B (zh) 2011-12-28

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