JP5096391B2 - 有機発光表示装置及びその製造方法 - Google Patents
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
- H01L2027/11868—Macro-architecture
- H01L2027/11874—Layout specification, i.e. inner core region
- H01L2027/11879—Data lines (buses)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
10 スイッチング薄膜トランジスター
20 駆動薄膜トランジスター
80 蓄電素子
70 有機発光素子(OLED)
131 スイッチング半導体層
132 駆動半導体層
135 チャンネル領域
136 ソース領域
137 ドレイン領域
140 絶縁膜
151 ゲートライン
152 スイッチングゲート電極
155 駆動ゲート電極
158 第1蓄電板
178 第2蓄電板
160 層間絶縁膜
171 データライン
172 共通電源ライン
173 スイッチングソース電極
174 スイッチングドレイン電極
176 駆動ソース電極
177 駆動ドレイン電極
180 平坦化膜
182 コンタクト孔
190 画素定義膜
195 陥没部
710 画素電極
720 有機発光層
730 共通電極
735 電極切断部
900 有機発光表示装置
Claims (12)
- 複数の画素領域を含む基板部材と、
前記画素領域毎に前記基板部材上に各々離隔配置された複数の画素電極と、
前記画素電極を各々露出する複数の開口部を有して前記基板部材上に形成された画素定義膜と、
前記画素電極上に形成された有機発光層と、
前記有機発光層に形成された共通電極とを含み、
前記複数の画素領域のうち有機発光素子が作動不良な画素領域だけに、隣接の画素領域に位置した共通電極と電気的に断絶されるように、前記共通電極がレーザーを用いて切断及び除去されて形成されて、前記画素定義膜の開口部を囲む電極切断部が形成され、
前記有機発光層は前記画素定義膜と前記共通電極との間にも形成され、
隣接の画素領域に位置した有機発光層と電気的に断絶されるように、前記電極切断部が形成された前記画素領域には前記電極切断部に沿って前記有機発光層が切断されて形成された有機層切断部が形成された
ことを特徴とする有機発光表示装置。 - 前記電極切断部は前記画素定義膜上に形成された
ことを特徴とする請求項1に記載の有機発光表示装置。 - 前記画素定義膜は前記電極切断部に沿って形成された陥没部を有する
ことを特徴とする請求項2に記載の有機発光表示装置。 - 前記電極切断部と前記画素電極との間に前記画素定義膜が配置された
ことを特徴とする請求項2に記載の有機発光表示装置。 - データライン、共通電源ライン、ソース電極、及びドレイン電極をさらに含み、
前記データライン、前記共通電源ライン、前記ソース電極及び前記ドレイン電極の中の一つ以上は前記電極切断部の下に配置された
ことを特徴とする請求項2に記載の有機発光表示装置。 - 前記電極切断部が形成された前記画素領域では前記有機発光層が発光しない
ことを特徴とする請求項1に記載の有機発光表示装置。 - 複数の画素領域を含む基板部材上に前記毎画素領域に各々画素電極を形成する段階と、
前記基板部材上に前記画素電極を各々露出する複数の開口部を有する画素定義膜を形成する段階と、
前記画素電極上に有機発光層を形成する段階と、
前記有機発光層上に共通電極を形成して複数の有機発光素子を完成する段階と、
前記有機発光素子を検査して不良有機発光素子を検出する段階と、
前記不良有機発光素子が位置する画素領域に隣接の画素領域に位置した共通電極と電気的に断絶されるように、前記共通電極をレーザーを用いて切断及び除去して形成された電極切断部を形成する段階と、をさらに含み、
前記電極切断部は前記画素定義膜の開口部を囲むように形成され、
前記有機発光層は前記画素定義膜と前記共通電極との間にも形成され、
隣接の画素領域に位置した有機発光層と電気的に断絶されるように、前記電極切断部を形成する工程において前記電極切断部に沿って前記有機発光層が切断されて形成された有機層切断部を共に形成する
ことを特徴とする有機発光表示装置の製造方法。 - 前記電極切断部は前記画素定義膜上に形成された
ことを特徴とする請求項7に記載の有機発光表示装置の製造方法。 - 前記電極切断部を形成する工程において前記電極切断部の下部の前記画素定義膜を陥没させて、陥没部を共に形成する
ことを特徴とする請求項8に記載の有機発光表示装置の製造方法。 - 前記電極切断部と前記画素電極との間に前記画素定義膜が配置された
ことを特徴とする請求項8に記載の有機発光表示装置の製造方法。 - データライン、共通電源ライン、ソース電極、及びドレイン電極をさらに含み、
前記データライン、前記共通電源ライン、前記ソース電極及び前記ドレイン電極の中の一つ以上は前記電極切断部の下に配置された
ことを特徴とする請求項8に記載の有機発光表示装置の製造方法。 - 前記電極切断部が形成された前記画素領域では前記有機発光層が発光しない
ことを特徴とする請求項7に記載の有機発光表示装置の製造方法。
Applications Claiming Priority (2)
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KR1020080081235A KR100932989B1 (ko) | 2008-08-20 | 2008-08-20 | 유기 발광 표시 장치 및 그 제조 방법 |
KR10-2008-0081235 | 2008-08-20 |
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JP2010050081A JP2010050081A (ja) | 2010-03-04 |
JP5096391B2 true JP5096391B2 (ja) | 2012-12-12 |
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US (1) | US8258692B2 (ja) |
EP (1) | EP2157610B1 (ja) |
JP (1) | JP5096391B2 (ja) |
KR (1) | KR100932989B1 (ja) |
CN (1) | CN101656265B (ja) |
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KR101772661B1 (ko) * | 2010-11-29 | 2017-09-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20130110990A (ko) | 2012-03-30 | 2013-10-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 리페어 방법 |
KR101977667B1 (ko) * | 2012-12-21 | 2019-05-13 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치 및 그 제조방법 |
KR102041481B1 (ko) | 2013-02-27 | 2019-11-07 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 및 그의 구동방법 |
KR20140118005A (ko) | 2013-03-27 | 2014-10-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102030632B1 (ko) | 2013-04-22 | 2019-10-14 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 및 그의 구동방법 |
US9911799B2 (en) | 2013-05-22 | 2018-03-06 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of repairing the same |
WO2014188695A1 (ja) * | 2013-05-23 | 2014-11-27 | パナソニック株式会社 | 有機エレクトロルミネッセンス表示装置の製造方法および有機エレクトロルミネッセンス表示装置 |
KR102064392B1 (ko) * | 2013-06-04 | 2020-01-10 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
KR102111625B1 (ko) * | 2013-06-28 | 2020-05-18 | 삼성디스플레이 주식회사 | 터치센서 내장형 표시장치 및 그의 제조방법 |
KR102054851B1 (ko) | 2013-07-17 | 2020-01-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 유기 발광 표시 장치의 리페어 방법 및 유기 발광 표시 장치의 구동 방법 |
KR102154709B1 (ko) | 2013-11-08 | 2020-09-11 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 및 유기 발광 표시 장치의 리페어 방법 |
KR20150069921A (ko) | 2013-12-16 | 2015-06-24 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그의 화소 |
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