JP4819142B2 - 有機発光表示装置及びその製造方法 - Google Patents
有機発光表示装置及びその製造方法 Download PDFInfo
- Publication number
- JP4819142B2 JP4819142B2 JP2009052057A JP2009052057A JP4819142B2 JP 4819142 B2 JP4819142 B2 JP 4819142B2 JP 2009052057 A JP2009052057 A JP 2009052057A JP 2009052057 A JP2009052057 A JP 2009052057A JP 4819142 B2 JP4819142 B2 JP 4819142B2
- Authority
- JP
- Japan
- Prior art keywords
- common electrode
- light emitting
- organic light
- pixel
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 125000006850 spacer group Chemical group 0.000 claims description 60
- 238000000149 argon plasma sintering Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 40
- 238000007789 sealing Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 239000012528 membrane Substances 0.000 claims description 19
- 239000011575 calcium Substances 0.000 claims description 16
- 239000011777 magnesium Substances 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 12
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052744 lithium Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 115
- 239000010410 layer Substances 0.000 description 62
- 239000010409 thin film Substances 0.000 description 35
- 230000005540 biological transmission Effects 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical class C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
- ODPYDILFQYARBK-UHFFFAOYSA-N 7-thiabicyclo[4.1.0]hepta-1,3,5-triene Chemical class C1=CC=C2SC2=C1 ODPYDILFQYARBK-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- -1 Polyphenylene Polymers 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
(数式1)
d=λ/(4n)cosθ ……公式1
20 駆動薄膜トランジスター
70 有機発光素子
80 蓄電素子
100 有機発光表示装置
110 表示基板
111 基板部材
120 バッファー層
132 駆動半導体層
135 チャンネル領域
136 ソース領域
137 ドレイン領域
140 ゲート絶縁膜
151 ゲートライン
152 スイッチングゲート電極
155 駆動ゲート電極
158 第1蓄電板
171 データライン
172 共通電源ライン
176 駆動ソース電極
177 ドレイン電極
178 第2蓄電板
180 平坦化膜
182 接触孔
190 画素定義膜
191 画素定義部
195 光散乱スペーサ部
199 感光物質層
210 密封部材
600 透過膜
710 画素電極
720 有機発光層
730 共通電極
750 共通電極
800 マスク
810 マスク基板
820 遮光パターン
CA 接触領域
IR 外部から流入した光
Claims (11)
- 基板部材;
前記基板部材上に形成された複数の画素電極;
前記画素電極を露出する複数の開口部を有し、前記基板部材上に形成された画素定義膜;
前記画素電極上に形成された有機発光層;
前記有機発光層及び前記画素定義膜上に形成された第1共通電極;
前記第1共通電極上に形成された透過膜;
前記透過膜上に形成された第2共通電極;そして
前記画素定義膜を介して前記基板部材と対向配置された密封部材を含み、
前記画素定義膜は前記開口部を有する画素定義部と、前記画素定義部から前記第1共通電極方向に突出形成された複数の光散乱スペーサ部を含み、
上面発光型の有機発光表示装置であって、前記第1共通電極で反射した光と前記第2共通電極で反射した光とを相殺干渉させ、
前記光散乱スペーサ部は、基板と密封部材との間の間隔を維持するとともに、その下に配置された導電膜に反射される外部光を散乱させて外光反射を抑制し、
前記光散乱スペーサ部は、スペーサの側面上に形成された第1共通電極で光を反射させることにより、光を散乱させ、
前記第1共通電極と前記第2共通電極は前記画素定義膜の光散乱スペーサ部上で互いに接触される
ことを特徴とする有機発光表示装置。 - 前記画素定義膜の光散乱スペーサ部は前記透過膜より高い高さを有し、前記透過膜上に突出形成された
ことを特徴とする請求項1に記載の有機発光表示装置。 - 前記第1共通電極及び前記第2共通電極は共に半透過膜で形成された
ことを特徴とする請求項1に記載の有機発光表示装置。 - 前記半透過膜はマグネシウム(Mg)、銀(Ag)、カルシウム(Ca)、リチウム(Li)、クロム(Cr)及びアルミニウム(Al)のうちの1種以上の金属で作られた
ことを特徴とする請求項3に記載の有機発光表示装置。 - 前記画素定義膜の光散乱スペーサ部は角錐台、角柱、円錐台、円柱、半球、及び半偏球のうちの1種以上の形状を含む
ことを特徴とする請求項1に記載の有機発光表示装置。 - 基板部材上に互いに離隔された複数の画素電極を形成する段階;
前記画素電極上に感光物質層を塗布する段階;
前記感光物質層をマスクを利用した写真工程でパターニングして画素定義膜を形成する段階;
前記画素電極上に有機発光層を形成する段階;
前記有機発光層上に第1共通電極を形成する段階;
前記第1共通電極上に透過膜を形成する段階;
前記透過膜上に第2共通電極を形成する段階;そして、
前記画素定義膜を介して前記基板部材と対向配置された密封部材を形成する段階を含み、
前記画素定義膜は前記画素電極を露出する開口部を有し、前記基板部材上に形成された画素定義部と、前記画素定義部から前記第1共通電極方向に突出形成された複数の光散乱スペーサ部を含み、
上面発光型の有機発光表示装置であって、前記第1共通電極で反射した光と前記第2共通電極で反射した光とを相殺干渉させ、
前記光散乱スペーサ部は、基板と密封部材との間の間隔を維持するとともに、その下に配置された導電膜に反射される外部光を散乱させて外光反射を抑制し、
前記光散乱スペーサ部は、スペーサの側面上に形成された第1共通電極で光を反射させることにより、光を散乱させ、
前記第1共通電極と前記第2共通電極は前記画素定義膜の光散乱スペーサ部上で互いに接触される
ことを特徴とする有機発光表示装置の製造方法。 - 前記写真工程はハーフトーン(half−tone)露光工程を含む
ことを特徴とする請求項6に記載の有機発光表示装置の製造方法。 - 前記画素定義膜の光散乱スペーサ部は前記透過膜より高い高さを有し、前記透過膜上に突出するように形成される
ことを特徴とする請求項6に記載の有機発光表示装置の製造方法。 - 前記第1共通電極及び前記第2共通電極のうちの1つ以上は半透過膜で形成される
ことを特徴とする請求項6に記載の有機発光表示装置の製造方法。 - 前記半透過膜はマグネシウム(Mg)、銀(Ag)、カルシウム(Ca)、リチウム(Li)、クロム(Cr)、及びアルミニウム(Al)のうちの1種以上の金属で作られる
ことを特徴とする請求項9に記載の有機発光表示装置の製造方法。 - 前記画素定義膜の光散乱スペーサ部は角錐台、角柱、円錐台、円柱、半球、及び半偏球のうちの1種以上の形状を含む
ことを特徴とする請求項6に記載の有機発光表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090001163A KR100989134B1 (ko) | 2009-01-07 | 2009-01-07 | 유기 발광 표시 장치 및 그 제조 방법 |
KR10-2009-0001163 | 2009-01-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010161050A JP2010161050A (ja) | 2010-07-22 |
JP4819142B2 true JP4819142B2 (ja) | 2011-11-24 |
Family
ID=42078961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009052057A Active JP4819142B2 (ja) | 2009-01-07 | 2009-03-05 | 有機発光表示装置及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8098008B2 (ja) |
EP (1) | EP2207219B1 (ja) |
JP (1) | JP4819142B2 (ja) |
KR (1) | KR100989134B1 (ja) |
CN (1) | CN101777575B (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101378439B1 (ko) * | 2008-08-20 | 2014-03-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR20110111747A (ko) * | 2010-04-05 | 2011-10-12 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
DE102011053665B4 (de) | 2010-09-20 | 2016-06-30 | Lg Display Co., Ltd. | Anzeigevorrichtung mit organischen lichtemittierenden Dioden und Herstellungsverfahren für dieselbe |
KR101323555B1 (ko) * | 2010-09-20 | 2013-10-29 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
KR101871227B1 (ko) | 2011-08-12 | 2018-08-03 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 그 제조 방법 |
KR101931736B1 (ko) | 2012-07-31 | 2018-12-26 | 삼성디스플레이 주식회사 | 터치 스크린 패널 일체형 표시장치 |
US10089930B2 (en) * | 2012-11-05 | 2018-10-02 | University Of Florida Research Foundation, Incorporated | Brightness compensation in a display |
TWI612689B (zh) * | 2013-04-15 | 2018-01-21 | 半導體能源研究所股份有限公司 | 發光裝置 |
KR102054850B1 (ko) * | 2013-05-30 | 2019-12-12 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR102064392B1 (ko) * | 2013-06-04 | 2020-01-10 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
KR102134842B1 (ko) | 2013-07-12 | 2020-07-17 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 |
KR102117849B1 (ko) | 2013-08-12 | 2020-06-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 패널 및 이의 제조 방법 |
KR102086805B1 (ko) * | 2013-11-19 | 2020-03-09 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
KR102184677B1 (ko) * | 2014-01-13 | 2020-12-01 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102118920B1 (ko) * | 2014-01-28 | 2020-06-05 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 그 제조방법 |
US9508778B2 (en) * | 2014-04-25 | 2016-11-29 | Samsung Display Co., Ltd. | Organic light emitting diode display |
CN104091896A (zh) * | 2014-07-07 | 2014-10-08 | 上海和辉光电有限公司 | Amoled结构及其制作方法 |
KR102244310B1 (ko) * | 2014-08-01 | 2021-04-27 | 삼성디스플레이 주식회사 | 표시장치 및 그 제조방법 |
CN104280951A (zh) * | 2014-09-23 | 2015-01-14 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN104576528B (zh) * | 2015-01-09 | 2018-03-23 | 京东方科技集团股份有限公司 | 有机电致发光显示面板的阵列基板、制作方法及显示装置 |
KR102552276B1 (ko) | 2015-02-24 | 2023-07-07 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102632619B1 (ko) * | 2015-11-23 | 2024-02-02 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 |
JP2017181831A (ja) * | 2016-03-31 | 2017-10-05 | ソニー株式会社 | 表示装置及び電子機器 |
KR102605208B1 (ko) | 2016-06-28 | 2023-11-24 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR102608418B1 (ko) * | 2016-07-13 | 2023-12-01 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102688970B1 (ko) * | 2016-09-19 | 2024-07-25 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102449131B1 (ko) | 2017-12-06 | 2022-09-28 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
KR102536116B1 (ko) * | 2018-04-12 | 2023-05-25 | 삼성디스플레이 주식회사 | 표시장치 |
KR20210031114A (ko) * | 2019-09-11 | 2021-03-19 | 엘지디스플레이 주식회사 | 유기발광표시장치 |
CN110911457A (zh) * | 2019-11-11 | 2020-03-24 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
US10862064B1 (en) * | 2020-04-30 | 2020-12-08 | Au Optronics Corporation | Organic light emitting diode (OLED) display panel with reflective electrode |
US11515365B2 (en) * | 2020-05-07 | 2022-11-29 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and display device |
CN112965310B (zh) * | 2021-02-26 | 2023-01-10 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4288918B2 (ja) * | 2002-09-26 | 2009-07-01 | セイコーエプソン株式会社 | 有機elパネルおよびその製造方法、それを用いた電気光学パネル並びに電子機器 |
JP2004192813A (ja) * | 2002-12-06 | 2004-07-08 | Toshiba Matsushita Display Technology Co Ltd | 有機el表示装置 |
KR100555750B1 (ko) | 2003-06-30 | 2006-03-03 | 주식회사 대우일렉트로닉스 | 저전송율 비디오 부호화 장치 및 방법 |
KR100544133B1 (ko) * | 2003-09-25 | 2006-01-23 | 삼성에스디아이 주식회사 | 능동구동형 평판표시장치 |
KR20050112456A (ko) * | 2004-05-25 | 2005-11-30 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR100670246B1 (ko) | 2004-07-13 | 2007-01-16 | 삼성에스디아이 주식회사 | 산화된 다공성 실리콘을 이용한 플라즈마 디스플레이 패널및 평판 램프 |
KR100601381B1 (ko) * | 2004-11-29 | 2006-07-13 | 삼성에스디아이 주식회사 | 평판표시장치 및 그 제조방법 |
US7459850B2 (en) * | 2005-06-22 | 2008-12-02 | Eastman Kodak Company | OLED device having spacers |
KR20070039433A (ko) | 2005-10-08 | 2007-04-12 | 삼성전자주식회사 | 표시장치 |
KR100658758B1 (ko) | 2005-11-28 | 2006-12-15 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP2007286150A (ja) * | 2006-04-13 | 2007-11-01 | Idemitsu Kosan Co Ltd | 電気光学装置、並びに、電流制御用tft基板及びその製造方法 |
KR100822216B1 (ko) | 2007-04-09 | 2008-04-16 | 삼성에스디아이 주식회사 | 박막 트랜지스터 기판, 이를 포함한 유기 발광 표시장치 및유기 발광 표시장치의 제조방법 |
KR100833773B1 (ko) | 2007-06-20 | 2008-05-29 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법 |
-
2009
- 2009-01-07 KR KR1020090001163A patent/KR100989134B1/ko active IP Right Grant
- 2009-03-05 JP JP2009052057A patent/JP4819142B2/ja active Active
-
2010
- 2010-01-04 CN CN2010100014044A patent/CN101777575B/zh active Active
- 2010-01-04 US US12/654,788 patent/US8098008B2/en active Active
- 2010-01-05 EP EP10150138.5A patent/EP2207219B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20100171419A1 (en) | 2010-07-08 |
US8098008B2 (en) | 2012-01-17 |
KR20100081771A (ko) | 2010-07-15 |
KR100989134B1 (ko) | 2010-10-20 |
CN101777575A (zh) | 2010-07-14 |
EP2207219B1 (en) | 2015-10-07 |
EP2207219A3 (en) | 2011-06-01 |
CN101777575B (zh) | 2012-02-22 |
JP2010161050A (ja) | 2010-07-22 |
EP2207219A2 (en) | 2010-07-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4819142B2 (ja) | 有機発光表示装置及びその製造方法 | |
KR101002663B1 (ko) | 유기 발광 표시 장치 | |
KR102118920B1 (ko) | 유기발광 표시장치 및 그 제조방법 | |
KR101002662B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
KR101378439B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
KR100989133B1 (ko) | 유기 발광 표시 장치 | |
KR100959108B1 (ko) | 유기 발광 표시 장치 | |
JP5096391B2 (ja) | 有機発光表示装置及びその製造方法 | |
KR100959107B1 (ko) | 유기 발광 표시 장치 | |
KR102054850B1 (ko) | 유기 발광 표시 장치 및 이의 제조 방법 | |
KR101015850B1 (ko) | 유기 발광 표시 장치 제조 방법 | |
JP4621925B2 (ja) | 有機発光表示装置 | |
KR20100081772A (ko) | 유기 발광 표시 장치 | |
JP2012054245A (ja) | 有機発光表示装置 | |
KR101432236B1 (ko) | 유기 발광 표시 장치 | |
JP5119536B2 (ja) | 有機発光表示装置 | |
KR102248731B1 (ko) | 유기발광 표시장치 및 그 제조방법 | |
KR20210050507A (ko) | 유기발광 표시장치 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101026 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110405 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110704 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110802 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110831 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140909 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4819142 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140909 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140909 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |