JP5072397B2 - 窒化ガリウム系化合物半導体発光素子およびその製造方法 - Google Patents

窒化ガリウム系化合物半導体発光素子およびその製造方法 Download PDF

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JP5072397B2
JP5072397B2 JP2007074779A JP2007074779A JP5072397B2 JP 5072397 B2 JP5072397 B2 JP 5072397B2 JP 2007074779 A JP2007074779 A JP 2007074779A JP 2007074779 A JP2007074779 A JP 2007074779A JP 5072397 B2 JP5072397 B2 JP 5072397B2
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layer
type semiconductor
bond
gallium nitride
semiconductor layer
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Japanese (ja)
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JP2008177514A (ja
Inventor
久幸 三木
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP2007074779A priority Critical patent/JP5072397B2/ja
Priority to TW096148777A priority patent/TW200834999A/zh
Priority to US12/441,074 priority patent/US20100059760A1/en
Priority to CN2007800474129A priority patent/CN101573804B/zh
Priority to KR1020097006345A priority patent/KR101025500B1/ko
Priority to PCT/JP2007/075228 priority patent/WO2008075794A1/ja
Publication of JP2008177514A publication Critical patent/JP2008177514A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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JP2007074779A 2006-12-20 2007-03-22 窒化ガリウム系化合物半導体発光素子およびその製造方法 Active JP5072397B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007074779A JP5072397B2 (ja) 2006-12-20 2007-03-22 窒化ガリウム系化合物半導体発光素子およびその製造方法
TW096148777A TW200834999A (en) 2006-12-20 2007-12-19 Gallium nitride compound semiconductor light-emitting device and method for manufacturing the same
US12/441,074 US20100059760A1 (en) 2006-12-20 2007-12-20 Gallium nitride-based compound semiconductor light emitting device and process for its production
CN2007800474129A CN101573804B (zh) 2006-12-20 2007-12-20 氮化镓系化合物半导体发光元件及其制造方法
KR1020097006345A KR101025500B1 (ko) 2006-12-20 2007-12-20 질화 갈륨계 화합물 반도체 발광 소자 및 그 제조 방법
PCT/JP2007/075228 WO2008075794A1 (ja) 2006-12-20 2007-12-20 窒化ガリウム系化合物半導体発光素子およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006343059 2006-12-20
JP2006343059 2006-12-20
JP2007074779A JP5072397B2 (ja) 2006-12-20 2007-03-22 窒化ガリウム系化合物半導体発光素子およびその製造方法

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JP2008177514A JP2008177514A (ja) 2008-07-31
JP5072397B2 true JP5072397B2 (ja) 2012-11-14

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US (1) US20100059760A1 (enExample)
JP (1) JP5072397B2 (enExample)
KR (1) KR101025500B1 (enExample)
CN (1) CN101573804B (enExample)
TW (1) TW200834999A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999694B1 (ko) * 2008-09-01 2010-12-08 엘지이노텍 주식회사 발광 소자
JP2010245109A (ja) * 2009-04-01 2010-10-28 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物系半導体素子、及び電極を作製する方法
JPWO2011102450A1 (ja) * 2010-02-19 2013-06-17 シャープ株式会社 化合物半導体発光素子の製造方法
KR101530418B1 (ko) * 2010-03-23 2015-06-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 발광 소자
KR101441833B1 (ko) * 2010-09-30 2014-09-18 도와 일렉트로닉스 가부시키가이샤 Ⅲ족 질화물 반도체 발광소자 및 그 제조 방법
JP2012094688A (ja) * 2010-10-27 2012-05-17 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP5949368B2 (ja) 2012-09-13 2016-07-06 豊田合成株式会社 半導体発光素子とその製造方法
CN103456603B (zh) * 2013-09-05 2016-04-13 大连理工大学 在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
CN105280764A (zh) * 2015-09-18 2016-01-27 厦门市三安光电科技有限公司 一种氮化物发光二极管的制作方法
CN105895760B (zh) * 2016-04-29 2018-12-21 佛山市南海区联合广东新光源产业创新中心 一种基于碳化硅衬底的led照明结构
JP7554385B2 (ja) * 2022-03-11 2024-09-20 日亜化学工業株式会社 発光素子の製造方法

Family Cites Families (18)

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US5804834A (en) * 1994-10-28 1998-09-08 Mitsubishi Chemical Corporation Semiconductor device having contact resistance reducing layer
JP3457511B2 (ja) * 1997-07-30 2003-10-20 株式会社東芝 半導体装置及びその製造方法
JP4553470B2 (ja) * 2000-09-13 2010-09-29 独立行政法人産業技術総合研究所 ｐ形ＺｎＯ系酸化物半導体層の成長方法およびそれを用いた半導体発光素子の製法
AUPS240402A0 (en) * 2002-05-17 2002-06-13 Macquarie Research Limited Gallium nitride
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US20070126008A1 (en) * 2003-10-14 2007-06-07 Munetaka Watanabe Gallium nitride-based compound semiconductor light-emitting device, positive electrode for the device, light-emitting diode and lamp using the device
WO2005057642A1 (en) * 2003-12-10 2005-06-23 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof
KR100580634B1 (ko) * 2003-12-24 2006-05-16 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US20070170461A1 (en) * 2004-02-24 2007-07-26 Koji Kamei Gallium nitride-based compound semiconductor light-emitting device
WO2005088740A1 (en) * 2004-03-16 2005-09-22 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device
US20070243414A1 (en) * 2004-05-26 2007-10-18 Hisayuki Miki Positive Electrode Structure and Gallium Nitride-Based Compound Semiconductor Light-Emitting Device
US8049243B2 (en) * 2004-05-26 2011-11-01 Showa Denko K.K. Gallium nitride-based compound semiconductor light emitting device
JP2006093595A (ja) * 2004-09-27 2006-04-06 Oki Electric Ind Co Ltd ショットキー電極の製造方法
KR100742986B1 (ko) * 2005-07-21 2007-07-26 (주)더리즈 컴플라이언트 기판을 갖는 질화갈륨계 화합물 반도체 소자의 제조 방법
JP2005340860A (ja) * 2005-08-12 2005-12-08 Toshiba Electronic Engineering Corp 半導体発光素子
JP5010129B2 (ja) 2005-09-30 2012-08-29 株式会社東芝 発光ダイオード及びその製造方法
US7910935B2 (en) * 2005-12-27 2011-03-22 Samsung Electronics Co., Ltd. Group-III nitride-based light emitting device
US7495577B2 (en) * 2006-11-02 2009-02-24 Jen-Yen Yen Multipurpose radio

Also Published As

Publication number Publication date
JP2008177514A (ja) 2008-07-31
KR20090055607A (ko) 2009-06-02
US20100059760A1 (en) 2010-03-11
KR101025500B1 (ko) 2011-04-04
TWI357670B (enExample) 2012-02-01
CN101573804B (zh) 2011-01-05
TW200834999A (en) 2008-08-16
CN101573804A (zh) 2009-11-04

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