TW200834999A - Gallium nitride compound semiconductor light-emitting device and method for manufacturing the same - Google Patents
Gallium nitride compound semiconductor light-emitting device and method for manufacturing the same Download PDFInfo
- Publication number
- TW200834999A TW200834999A TW096148777A TW96148777A TW200834999A TW 200834999 A TW200834999 A TW 200834999A TW 096148777 A TW096148777 A TW 096148777A TW 96148777 A TW96148777 A TW 96148777A TW 200834999 A TW200834999 A TW 200834999A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- type semiconductor
- semiconductor layer
- light
- gallium nitride
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 163
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- -1 Gallium nitride compound Chemical class 0.000 title abstract description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 84
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 46
- 230000015572 biosynthetic process Effects 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 29
- 239000012298 atmosphere Substances 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000012159 carrier gas Substances 0.000 claims description 18
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 88
- 239000011777 magnesium Substances 0.000 description 28
- 239000013078 crystal Substances 0.000 description 25
- 239000000203 mixture Substances 0.000 description 16
- 230000005284 excitation Effects 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000000137 annealing Methods 0.000 description 13
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 12
- 229910001195 gallium oxide Inorganic materials 0.000 description 12
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- 229910052732 germanium Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 238000005253 cladding Methods 0.000 description 7
- 229910052749 magnesium Inorganic materials 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 238000001420 photoelectron spectroscopy Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229930192419 itoside Natural products 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000007773 negative electrode material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000257303 Hymenoptera Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
- DXWQDVZGROCFPG-UHFFFAOYSA-N [O--].[Zn++].[Au+3] Chemical compound [O--].[Zn++].[Au+3] DXWQDVZGROCFPG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- QAIDPMSYQQBQTK-UHFFFAOYSA-N diethylgallium Chemical compound CC[Ga]CC QAIDPMSYQQBQTK-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- HALUPQKJBQVOJV-UHFFFAOYSA-N lithium;oxotin Chemical compound [Li].[Sn]=O HALUPQKJBQVOJV-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- CMOQUKQBSAJCOD-UHFFFAOYSA-N methane silane Chemical compound C.[SiH4] CMOQUKQBSAJCOD-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000012946 outsourcing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006343059 | 2006-12-20 | ||
| JP2007074779A JP5072397B2 (ja) | 2006-12-20 | 2007-03-22 | 窒化ガリウム系化合物半導体発光素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200834999A true TW200834999A (en) | 2008-08-16 |
| TWI357670B TWI357670B (enExample) | 2012-02-01 |
Family
ID=39704289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096148777A TW200834999A (en) | 2006-12-20 | 2007-12-19 | Gallium nitride compound semiconductor light-emitting device and method for manufacturing the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20100059760A1 (enExample) |
| JP (1) | JP5072397B2 (enExample) |
| KR (1) | KR101025500B1 (enExample) |
| CN (1) | CN101573804B (enExample) |
| TW (1) | TW200834999A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100999694B1 (ko) * | 2008-09-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자 |
| JP2010245109A (ja) * | 2009-04-01 | 2010-10-28 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物系半導体素子、及び電極を作製する方法 |
| CN102859725B (zh) * | 2010-02-19 | 2016-04-13 | 夏普株式会社 | 化合物半导体发光元件的制造方法 |
| JP5633560B2 (ja) * | 2010-03-23 | 2014-12-03 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| WO2012042909A1 (ja) * | 2010-09-30 | 2012-04-05 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
| JP2012094688A (ja) * | 2010-10-27 | 2012-05-17 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| JP5949368B2 (ja) | 2012-09-13 | 2016-07-06 | 豊田合成株式会社 | 半導体発光素子とその製造方法 |
| CN103456603B (zh) * | 2013-09-05 | 2016-04-13 | 大连理工大学 | 在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜 |
| JP5828568B1 (ja) * | 2014-08-29 | 2015-12-09 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
| CN105280764A (zh) * | 2015-09-18 | 2016-01-27 | 厦门市三安光电科技有限公司 | 一种氮化物发光二极管的制作方法 |
| CN105895760B (zh) * | 2016-04-29 | 2018-12-21 | 佛山市南海区联合广东新光源产业创新中心 | 一种基于碳化硅衬底的led照明结构 |
| JP7554385B2 (ja) * | 2022-03-11 | 2024-09-20 | 日亜化学工業株式会社 | 発光素子の製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804834A (en) * | 1994-10-28 | 1998-09-08 | Mitsubishi Chemical Corporation | Semiconductor device having contact resistance reducing layer |
| JP3457511B2 (ja) * | 1997-07-30 | 2003-10-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP4553470B2 (ja) * | 2000-09-13 | 2010-09-29 | 独立行政法人産業技術総合研究所 | ｐ形ＺｎＯ系酸化物半導体層の成長方法およびそれを用いた半導体発光素子の製法 |
| AUPS240402A0 (en) | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
| KR100571818B1 (ko) * | 2003-10-08 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| TWI264833B (en) * | 2003-10-14 | 2006-10-21 | Showa Denko Kk | Gallium nitride-based compound semiconductor light-emitting device, positive electrode for the device, light-emitting diode and lamp using the device |
| WO2005057642A1 (en) * | 2003-12-10 | 2005-06-23 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof |
| KR100580634B1 (ko) * | 2003-12-24 | 2006-05-16 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| CN100438101C (zh) * | 2004-02-24 | 2008-11-26 | 昭和电工株式会社 | 基于氮化镓的化合物半导体发光器件 |
| US7402830B2 (en) * | 2004-03-16 | 2008-07-22 | Show A Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device |
| WO2005117150A1 (en) * | 2004-05-26 | 2005-12-08 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light emitting device |
| US20070243414A1 (en) * | 2004-05-26 | 2007-10-18 | Hisayuki Miki | Positive Electrode Structure and Gallium Nitride-Based Compound Semiconductor Light-Emitting Device |
| JP2006093595A (ja) * | 2004-09-27 | 2006-04-06 | Oki Electric Ind Co Ltd | ショットキー電極の製造方法 |
| KR100742986B1 (ko) * | 2005-07-21 | 2007-07-26 | (주)더리즈 | 컴플라이언트 기판을 갖는 질화갈륨계 화합물 반도체 소자의 제조 방법 |
| JP2005340860A (ja) * | 2005-08-12 | 2005-12-08 | Toshiba Electronic Engineering Corp | 半導体発光素子 |
| JP5010129B2 (ja) * | 2005-09-30 | 2012-08-29 | 株式会社東芝 | 発光ダイオード及びその製造方法 |
| US7910935B2 (en) * | 2005-12-27 | 2011-03-22 | Samsung Electronics Co., Ltd. | Group-III nitride-based light emitting device |
| US7495577B2 (en) * | 2006-11-02 | 2009-02-24 | Jen-Yen Yen | Multipurpose radio |
-
2007
- 2007-03-22 JP JP2007074779A patent/JP5072397B2/ja active Active
- 2007-12-19 TW TW096148777A patent/TW200834999A/zh unknown
- 2007-12-20 KR KR1020097006345A patent/KR101025500B1/ko active Active
- 2007-12-20 US US12/441,074 patent/US20100059760A1/en not_active Abandoned
- 2007-12-20 CN CN2007800474129A patent/CN101573804B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090055607A (ko) | 2009-06-02 |
| TWI357670B (enExample) | 2012-02-01 |
| JP2008177514A (ja) | 2008-07-31 |
| CN101573804A (zh) | 2009-11-04 |
| US20100059760A1 (en) | 2010-03-11 |
| KR101025500B1 (ko) | 2011-04-04 |
| CN101573804B (zh) | 2011-01-05 |
| JP5072397B2 (ja) | 2012-11-14 |
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