KR20090055607A - 질화 갈륨계 화합물 반도체 발광 소자 및 그 제조 방법 - Google Patents
질화 갈륨계 화합물 반도체 발광 소자 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20090055607A KR20090055607A KR1020097006345A KR20097006345A KR20090055607A KR 20090055607 A KR20090055607 A KR 20090055607A KR 1020097006345 A KR1020097006345 A KR 1020097006345A KR 20097006345 A KR20097006345 A KR 20097006345A KR 20090055607 A KR20090055607 A KR 20090055607A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- type semiconductor
- gallium nitride
- semiconductor layer
- bond
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 159
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 92
- -1 Gallium nitride compound Chemical class 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000012298 atmosphere Substances 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000012159 carrier gas Substances 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 13
- 238000002834 transmittance Methods 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 239000010408 film Substances 0.000 description 68
- 239000013078 crystal Substances 0.000 description 27
- 239000011777 magnesium Substances 0.000 description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000000203 mixture Substances 0.000 description 17
- 239000002019 doping agent Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000000137 annealing Methods 0.000 description 13
- 239000002994 raw material Substances 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 10
- 238000005253 cladding Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 238000001552 radio frequency sputter deposition Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229930192419 itoside Natural products 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000007773 negative electrode material Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 101000878457 Macrocallista nimbosa FMRFamide Proteins 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (12)
- 기판 상에 질화 갈륨계 화합물 반도체로 이루어지는 n형 반도체층, 발광층 및 p형 반도체층을 이 순서로 갖고, 상기 n형 반도체층 및 상기 p형 반도체층에 부극 및 정극이 각각 형성되고, 상기 정극이 도전성과 투광성을 갖는 산화물 재료로 이루어지는 발광 소자에 있어서:상기 p형 반도체층과 상기 정극 사이에 Ga-O 결합 및/또는 N-O 결합을 갖는 화합물을 포함하는 층이 존재하는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자.
- 제 1 항에 있어서,상기 산화물 재료는 ITO, IZO, AZO 및 ZnO로 이루어지는 군으로부터 선택된 1종 이상인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자.
- 기판 상에 질화 갈륨계 화합물 반도체로 이루어지는 n형 반도체층, 발광층 및 p형 반도체층을 이 순서로 성막하고, 성막된 n형 반도체층 및 p형 반도체층에 각각 부극 및 도전성과 투광성을 갖는 산화물 재료로 이루어지는 정극을 형성해서 질화 갈륨계 화합물 반도체 발광 소자를 제조할 때에, 정극의 형성 공정후에 p형 반도체층의 표면에 Ga-O 결합 및/또는 N-O 결합을 갖는 화합물을 포함하는 층을 생성하는 공정을 포함하는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자 의 제조 방법.
- 제 3 항에 있어서,상기 p형 반도체층의 표면에 Ga-O 결합 및/또는 N-O 결합을 갖는 화합물을 포함하는 층을 생성하는 공정은 300℃이상의 온도에서의 열처리인 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자의 제조 방법.
- 제 4 항에 있어서,상기 열처리를 산소 함유 분위기하에서 행하는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자의 제조 방법.
- 기판 상에 질화 갈륨계 화합물 반도체로 이루어지는 n형 반도체층, 발광층 및 p형 반도체층을 이 순서로 성막하고, 성막된 n형 반도체층 및 p형 반도체층에 각각 부극 및 도전성과 투광성을 갖는 산화물 재료로 이루어지는 정극을 형성해서 질화 갈륨계 화합물 반도체 발광 소자를 제조할 때에, p형 반도체층의 성막 공정후 정극의 형성 공정전에 p형 반도체층의 표면에 Ga-O 결합 및/또는 N-O 결합을 갖는 화합물을 포함하는 층을 생성하는 공정을 포함하는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자의 제조 방법.
- 제 6 항에 있어서,상기 p형 반도체층의 표면에 Ga-O 결합 및/또는 N-O 결합을 갖는 화합물을 포함하는 층을 생성하는 공정은 암모니아를 포함하지 않는 분위기 하에 있어서 700℃이상의 온도로 1분이상 열처리하고, 열처리중 또는 열처리후 산소 함유 분위기 중에 노출하는 것으로 이루어지는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자의 제조 방법.
- 제 7 항에 있어서,상기 열처리는 5분이상에 걸쳐 행하여지는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자의 제조 방법.
- 제 6 항에 있어서,상기 p형 반도체층의 표면에 Ga-O 결합 및/또는 N-O 결합을 갖는 화합물을 포함하는 층을 생성하는 공정은 p형 반도체층 성막 후의 강온 과정으로서, 캐리어 가스가 수소 이외의 가스로 이루어지고, 또한 암모니아가 도입되어 있지 않는 분위기 하에서 강온되고, 그 후 산소 함유 분위기 중에 노출시키는 것으로 이루어지는 것을 특징으로 하는 질화 갈륨계 화합물 반도체 발광 소자의 제조 방법.
- 제 1 항 또는 제 2 항에 기재된 질화 갈륨계 화합물 반도체 발광 소자로 이루어지는 것을 특징으로 하는 램프.
- 제 10 항에 기재된 램프가 조립되어 있는 것을 특징으로 하는 전자 기기.
- 제 11 항에 기재된 전자 기기가 조립되어 있는 것을 특징으로 하는 기계 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006343059 | 2006-12-20 | ||
JPJP-P-2006-343059 | 2006-12-20 | ||
JPJP-P-2007-074779 | 2007-03-22 | ||
JP2007074779A JP5072397B2 (ja) | 2006-12-20 | 2007-03-22 | 窒化ガリウム系化合物半導体発光素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090055607A true KR20090055607A (ko) | 2009-06-02 |
KR101025500B1 KR101025500B1 (ko) | 2011-04-04 |
Family
ID=39704289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097006345A KR101025500B1 (ko) | 2006-12-20 | 2007-12-20 | 질화 갈륨계 화합물 반도체 발광 소자 및 그 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100059760A1 (ko) |
JP (1) | JP5072397B2 (ko) |
KR (1) | KR101025500B1 (ko) |
CN (1) | CN101573804B (ko) |
TW (1) | TW200834999A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101530418B1 (ko) * | 2010-03-23 | 2015-06-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 발광 소자 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100999694B1 (ko) * | 2008-09-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자 |
JP2010245109A (ja) * | 2009-04-01 | 2010-10-28 | Sumitomo Electric Ind Ltd | Iii族窒化物系半導体素子、及び電極を作製する方法 |
US8865494B2 (en) * | 2010-02-19 | 2014-10-21 | Sharp Kabushiki Kaisha | Manufacturing method for compound semiconductor light-emitting element |
JP5508539B2 (ja) * | 2010-09-30 | 2014-06-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
JP2012094688A (ja) | 2010-10-27 | 2012-05-17 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP5949368B2 (ja) | 2012-09-13 | 2016-07-06 | 豊田合成株式会社 | 半導体発光素子とその製造方法 |
CN103456603B (zh) * | 2013-09-05 | 2016-04-13 | 大连理工大学 | 在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜 |
JP5828568B1 (ja) * | 2014-08-29 | 2015-12-09 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
CN105280764A (zh) * | 2015-09-18 | 2016-01-27 | 厦门市三安光电科技有限公司 | 一种氮化物发光二极管的制作方法 |
CN105895760B (zh) * | 2016-04-29 | 2018-12-21 | 佛山市南海区联合广东新光源产业创新中心 | 一种基于碳化硅衬底的led照明结构 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804834A (en) * | 1994-10-28 | 1998-09-08 | Mitsubishi Chemical Corporation | Semiconductor device having contact resistance reducing layer |
JP3457511B2 (ja) * | 1997-07-30 | 2003-10-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP4553470B2 (ja) * | 2000-09-13 | 2010-09-29 | 独立行政法人産業技術総合研究所 | p形ZnO系酸化物半導体層の成長方法およびそれを用いた半導体発光素子の製法 |
AUPS240402A0 (en) * | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
KR100571818B1 (ko) * | 2003-10-08 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
US20070126008A1 (en) * | 2003-10-14 | 2007-06-07 | Munetaka Watanabe | Gallium nitride-based compound semiconductor light-emitting device, positive electrode for the device, light-emitting diode and lamp using the device |
KR100822771B1 (ko) * | 2003-12-10 | 2008-04-17 | 쇼와 덴코 가부시키가이샤 | 질화갈륨계 화합물 반도체 발광소자 및 그 음극 |
KR100580634B1 (ko) * | 2003-12-24 | 2006-05-16 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
CN100438101C (zh) * | 2004-02-24 | 2008-11-26 | 昭和电工株式会社 | 基于氮化镓的化合物半导体发光器件 |
WO2005088740A1 (en) * | 2004-03-16 | 2005-09-22 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device |
US8049243B2 (en) * | 2004-05-26 | 2011-11-01 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light emitting device |
US20070243414A1 (en) * | 2004-05-26 | 2007-10-18 | Hisayuki Miki | Positive Electrode Structure and Gallium Nitride-Based Compound Semiconductor Light-Emitting Device |
JP2006093595A (ja) * | 2004-09-27 | 2006-04-06 | Oki Electric Ind Co Ltd | ショットキー電極の製造方法 |
KR100742986B1 (ko) * | 2005-07-21 | 2007-07-26 | (주)더리즈 | 컴플라이언트 기판을 갖는 질화갈륨계 화합물 반도체 소자의 제조 방법 |
JP2005340860A (ja) * | 2005-08-12 | 2005-12-08 | Toshiba Electronic Engineering Corp | 半導体発光素子 |
JP5010129B2 (ja) * | 2005-09-30 | 2012-08-29 | 株式会社東芝 | 発光ダイオード及びその製造方法 |
WO2007074969A1 (en) * | 2005-12-27 | 2007-07-05 | Samsung Electronics Co., Ltd. | Group-iii nitride-based light emitting device |
US7495577B2 (en) * | 2006-11-02 | 2009-02-24 | Jen-Yen Yen | Multipurpose radio |
-
2007
- 2007-03-22 JP JP2007074779A patent/JP5072397B2/ja active Active
- 2007-12-19 TW TW096148777A patent/TW200834999A/zh unknown
- 2007-12-20 US US12/441,074 patent/US20100059760A1/en not_active Abandoned
- 2007-12-20 KR KR1020097006345A patent/KR101025500B1/ko active IP Right Grant
- 2007-12-20 CN CN2007800474129A patent/CN101573804B/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101530418B1 (ko) * | 2010-03-23 | 2015-06-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 발광 소자 |
Also Published As
Publication number | Publication date |
---|---|
JP2008177514A (ja) | 2008-07-31 |
CN101573804B (zh) | 2011-01-05 |
CN101573804A (zh) | 2009-11-04 |
JP5072397B2 (ja) | 2012-11-14 |
TWI357670B (ko) | 2012-02-01 |
KR101025500B1 (ko) | 2011-04-04 |
TW200834999A (en) | 2008-08-16 |
US20100059760A1 (en) | 2010-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101025500B1 (ko) | 질화 갈륨계 화합물 반도체 발광 소자 및 그 제조 방법 | |
KR101067122B1 (ko) | Ⅲ족 질화물 반도체의 제조 방법, ⅲ족 질화물 반도체 발광 소자의 제조 방법 및 ⅲ족 질화물 반도체 발광 소자, 및 램프 | |
TWI413279B (zh) | Iii族氮化物半導體發光元件及其製造方法、以及燈 | |
EP2012372B1 (en) | Method for manufacturing gallium nitride compound semiconductor light emitting element | |
US8492186B2 (en) | Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp | |
KR100988143B1 (ko) | 반도체 발광 소자, 반도체 발광 소자의 제조 방법 및 램프 | |
KR101151158B1 (ko) | 화합물 반도체 발광 소자 및 그 제조 방법, 화합물 반도체 발광 소자용 도전형 투광성 전극, 램프, 전자 기기 및 기계 장치 | |
KR101074178B1 (ko) | Ⅲ족 질화물 화합물 반도체 발광 소자의 제조 방법, 및 ⅲ족 질화물 화합물 반도체 발광 소자, 및 램프 | |
WO2008072681A1 (ja) | 化合物半導体発光素子及びその製造方法 | |
KR20090074092A (ko) | Ⅲ족 질화물 반도체 발광 소자의 제조 방법, 및 ⅲ족 질화물 반도체 발광 소자, 및 램프 | |
JP2007165611A (ja) | 窒化ガリウム系化合物半導体発光素子及びその製造方法 | |
WO2007108531A1 (ja) | 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体発光素子及びそれを用いたランプ | |
JP2008218740A (ja) | 窒化ガリウム系化合物半導体発光素子の製造方法 | |
US7585690B2 (en) | Process for producing group III nitride compound semiconductor light emitting device, group III nitride compound semiconductor light emitting device and lamp | |
JP2007109713A (ja) | Iii族窒化物半導体発光素子 | |
KR101232031B1 (ko) | 질화갈륨계 화합물 반도체 발광소자 | |
JP2007288052A (ja) | Iii族窒化物半導体発光素子の製造方法 | |
JP2009161434A (ja) | Iii族窒化物半導体結晶の製造方法及びiii族窒化物半導体結晶 | |
WO2008075794A1 (ja) | 窒化ガリウム系化合物半導体発光素子およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20140228 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150224 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160219 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20170221 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20180302 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20190306 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20200303 Year of fee payment: 10 |