JP4841206B2 - 窒化ガリウム系化合物半導体発光素子 - Google Patents
窒化ガリウム系化合物半導体発光素子 Download PDFInfo
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- JP4841206B2 JP4841206B2 JP2005258184A JP2005258184A JP4841206B2 JP 4841206 B2 JP4841206 B2 JP 4841206B2 JP 2005258184 A JP2005258184 A JP 2005258184A JP 2005258184 A JP2005258184 A JP 2005258184A JP 4841206 B2 JP4841206 B2 JP 4841206B2
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- gallium nitride
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- 239000004065 semiconductor Substances 0.000 title claims description 97
- 229910002601 GaN Inorganic materials 0.000 title claims description 76
- -1 Gallium nitride compound Chemical class 0.000 title claims description 23
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 45
- 239000012535 impurity Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 37
- 150000001875 compounds Chemical class 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 25
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 23
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 169
- 238000001816 cooling Methods 0.000 description 29
- 239000011777 magnesium Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 21
- 239000001257 hydrogen Substances 0.000 description 19
- 229910052739 hydrogen Inorganic materials 0.000 description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- 239000013078 crystal Substances 0.000 description 18
- 229910021529 ammonia Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000002994 raw material Substances 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 238000001947 vapour-phase growth Methods 0.000 description 8
- 238000005253 cladding Methods 0.000 description 7
- 239000000470 constituent Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- QQXSEZVCKAEYQJ-UHFFFAOYSA-N tetraethylgermanium Chemical compound CC[Ge](CC)(CC)CC QQXSEZVCKAEYQJ-UHFFFAOYSA-N 0.000 description 1
- ZRLCXMPFXYVHGS-UHFFFAOYSA-N tetramethylgermane Chemical compound C[Ge](C)(C)C ZRLCXMPFXYVHGS-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
(1)基板上に窒化ガリウム系化合物半導体からなる、n型半導体層、発光層およびp型半導体層がこの順序で積層され、正極および負極がそれぞれp型半導体層およびn型半導体層に接して設けられた発光素子において、正極と接するp型半導体層中にp型不純物と水素原子が共存する領域があり、正極の少なくともp型半導体層に接する部分がn型導電性透光性材料からなることを特徴とする窒化ガリウム系化合物半導体発光素子。
本実施例では、水素を故意に残留させた領域を含むp型GaN系半導体層上にITO正極を直接設けたGaN系半導体LEDを例にして本発明の内容を具体的に説明する。
(1)MgドープのAl0.07Ga0.93Nクラッド層106の成長が終了した後、成長反応炉内の圧力を2×104パスカル(Pa)とした。
本実施例では、実施例1とは異なる条件を用いて水素を故意に残留させた領域を含むp型GaN系半導体層上に、ITO電極を直接コンタクトさせたGaN系半導体LEDについて説明する。
(1)MgドープのAl0,07Ga0.98Nクラッド層106の成長が終了した後、成長反応炉内の圧力を2×104パスカル(Pa)とした。
2 バッファ層
3 n型半導体層
4 発光層
5 p型半導体層
6 負極
7 正極
10 LED
11 積層構造体
101 基板
102 アンドープGaN層
103 n型GaN層
104 n型AlGaNクラッド層
105 多重量子井戸構造発光層
106 p型AlGaNクラッド層
107 p型AlGaNコンタクト層
108 負極(n型オーミック電極)
109 正極(p型オーミック電極)
110 正極ボンディングパッド
Claims (11)
- 基板上に窒化ガリウム系化合物半導体からなる、n型半導体層、発光層およびp型半導体層がこの順序で積層され、正極および負極がそれぞれp型半導体層およびn型半導体層に接して設けられた発光素子において、正極と接するp型半導体層中にp型不純物と水素原子が共存する領域があり、正極の少なくともp型半導体層に接する部分がn型導電性透光性材料からなることを特徴とする窒化ガリウム系化合物半導体発光素子。
- p型不純物と水素原子が共存する領域での水素原子濃度がp型不純物濃度に対して1/10以上〜2/1以下である請求項1に記載の窒化ガリウム系化合物半導体発光素子。
- p型不純物と水素原子が共存する領域での水素原子濃度がp型不純物濃度に対して1/5以上〜1.5/1以下である請求項2に記載の窒化ガリウム系化合物半導体発光素子。
- p型不純物と水素原子が共存する領域での水素原子濃度とp型不純物濃度が概ね等しい請求項3に記載の窒化ガリウム系化合物半導体発光素子。
- p型不純物と水素原子が共存する領域の厚さが正極と接するp型半導体層全体の厚さの40%以上である請求項1〜4のいずれか一項に記載の窒化ガリウム系化合物半導体発光素子。
- p型不純物と水素原子が共存する領域の厚さが正極と接するp型半導体層全体の厚さの70%以上である請求項5に記載の窒化ガリウム系化合物半導体発光素子。
- n型導電性透光性材料がITO、TiO2、ZnO、Bi2O3、MgO、ZnAlO、ZnSおよびSnO2からなる群から選ばれた少なくとも一種の材料である請求項1〜6のいずれか一項に記載の窒化ガリウム系化合物半導体発光素子。
- n型導電性透光性材料が少なくともITOを含有している請求項7に記載の窒化ガリウム系化合物半導体発光素子。
- 正極のn型導電性透光性材料からなる部分の厚さが35nm〜10μmである請求項1〜8のいずれか一項に記載の窒化ガリウム系化合物半導体発光素子。
- 正極のn型導電性透光性材料からなる部分の厚さが100nm〜1μmである請求項9に記載の窒化ガリウム系化合物半導体発光素子。
- 請求項1〜10のいずれか一項に記載の窒化ガリウム系化合物半導体発光素子からなるランプ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005258184A JP4841206B2 (ja) | 2005-09-06 | 2005-09-06 | 窒化ガリウム系化合物半導体発光素子 |
EP06797756.1A EP1922768B1 (en) | 2005-09-06 | 2006-09-05 | Gallium nitride-based compound semiconductor light-emitting device |
US12/065,970 US7847314B2 (en) | 2005-09-06 | 2006-09-05 | Gallium nitride-based compound semiconductor light-emitting device |
PCT/JP2006/317930 WO2007029841A1 (en) | 2005-09-06 | 2006-09-05 | Gallium nitride-based compound semiconductor light-emitting device |
CNB200680032456XA CN100568562C (zh) | 2005-09-06 | 2006-09-05 | 氮化镓基化合物半导体发光器件 |
KR1020087005574A KR101232031B1 (ko) | 2005-09-06 | 2006-09-05 | 질화갈륨계 화합물 반도체 발광소자 |
TW095132923A TWI315106B (en) | 2005-09-06 | 2006-09-06 | Gallium nitride-based compound semiconductor light-emitting device |
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JP2005258184A JP4841206B2 (ja) | 2005-09-06 | 2005-09-06 | 窒化ガリウム系化合物半導体発光素子 |
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JP2007073690A JP2007073690A (ja) | 2007-03-22 |
JP4841206B2 true JP4841206B2 (ja) | 2011-12-21 |
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JP2005258184A Active JP4841206B2 (ja) | 2005-09-06 | 2005-09-06 | 窒化ガリウム系化合物半導体発光素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7847314B2 (ja) |
EP (1) | EP1922768B1 (ja) |
JP (1) | JP4841206B2 (ja) |
KR (1) | KR101232031B1 (ja) |
CN (1) | CN100568562C (ja) |
TW (1) | TWI315106B (ja) |
WO (1) | WO2007029841A1 (ja) |
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JP2009283551A (ja) | 2008-05-20 | 2009-12-03 | Showa Denko Kk | 半導体発光素子及びその製造方法、ランプ |
JP5479391B2 (ja) * | 2011-03-08 | 2014-04-23 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
US8669585B1 (en) * | 2011-09-03 | 2014-03-11 | Toshiba Techno Center Inc. | LED that has bounding silicon-doped regions on either side of a strain release layer |
JP6067401B2 (ja) * | 2013-02-13 | 2017-01-25 | 学校法人 名城大学 | 半導体発光素子、及び、その製造方法 |
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JP3538628B2 (ja) * | 1994-10-18 | 2004-06-14 | 豊田合成株式会社 | 3族窒化物半導体発光素子の製造方法 |
US6020602A (en) * | 1996-09-10 | 2000-02-01 | Kabushiki Kaisha Toshba | GaN based optoelectronic device and method for manufacturing the same |
JP3233139B2 (ja) | 1999-09-30 | 2001-11-26 | 松下電器産業株式会社 | 窒化物半導体発光素子及びその製造方法 |
JP4103309B2 (ja) | 2000-07-13 | 2008-06-18 | 松下電器産業株式会社 | p型窒化物半導体の製造方法 |
US6984851B2 (en) * | 2000-06-21 | 2006-01-10 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode |
US6479313B1 (en) * | 2001-05-25 | 2002-11-12 | Kopin Corporation | Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes |
JP3795007B2 (ja) * | 2002-11-27 | 2006-07-12 | 松下電器産業株式会社 | 半導体発光素子及びその製造方法 |
JP3833227B2 (ja) * | 2003-11-04 | 2006-10-11 | 昭和電工株式会社 | III族窒化物p型半導体の製造方法およびIII族窒化物半導体発光素子 |
JP4901115B2 (ja) * | 2004-03-04 | 2012-03-21 | 昭和電工株式会社 | 窒化ガリウム系半導体素子 |
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KR101232031B1 (ko) | 2013-02-12 |
TWI315106B (en) | 2009-09-21 |
CN100568562C (zh) | 2009-12-09 |
US7847314B2 (en) | 2010-12-07 |
CN101258615A (zh) | 2008-09-03 |
EP1922768B1 (en) | 2014-06-25 |
KR20080035682A (ko) | 2008-04-23 |
EP1922768A1 (en) | 2008-05-21 |
US20090152585A1 (en) | 2009-06-18 |
TW200802959A (en) | 2008-01-01 |
EP1922768A4 (en) | 2010-12-22 |
JP2007073690A (ja) | 2007-03-22 |
WO2007029841A1 (en) | 2007-03-15 |
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