JP5063365B2 - 電流密度増強層（ｃｄｅｌ）を有する薄膜抵抗器 - Google Patents

電流密度増強層（ｃｄｅｌ）を有する薄膜抵抗器 Download PDF

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Publication number
JP5063365B2
JP5063365B2 JP2007556200A JP2007556200A JP5063365B2 JP 5063365 B2 JP5063365 B2 JP 5063365B2 JP 2007556200 A JP2007556200 A JP 2007556200A JP 2007556200 A JP2007556200 A JP 2007556200A JP 5063365 B2 JP5063365 B2 JP 5063365B2
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Prior art keywords
thin film
layer
film resistor
cdel
conductor material
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Expired - Fee Related
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JP2007556200A
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Japanese (ja)
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JP2008530820A (ja
JP2008530820A5 (enExample
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チンサキンディ、アニル、ケイ
エシュン、エベニーザー、イー
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Adjustable Resistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
JP2007556200A 2005-02-16 2006-02-08 電流密度増強層（ｃｄｅｌ）を有する薄膜抵抗器 Expired - Fee Related JP5063365B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/906,365 2005-02-16
US10/906,365 US7271700B2 (en) 2005-02-16 2005-02-16 Thin film resistor with current density enhancing layer (CDEL)
PCT/US2006/004436 WO2006088709A2 (en) 2005-02-16 2006-02-08 Thin film resistors with current density enhancing layer (cdel)

Publications (3)

Publication Number Publication Date
JP2008530820A JP2008530820A (ja) 2008-08-07
JP2008530820A5 JP2008530820A5 (enExample) 2009-02-12
JP5063365B2 true JP5063365B2 (ja) 2012-10-31

Family

ID=36815104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007556200A Expired - Fee Related JP5063365B2 (ja) 2005-02-16 2006-02-08 電流密度増強層（ｃｄｅｌ）を有する薄膜抵抗器

Country Status (7)

Country Link
US (1) US7271700B2 (enExample)
EP (1) EP1849167B1 (enExample)
JP (1) JP5063365B2 (enExample)
CN (1) CN101647075B (enExample)
AT (1) ATE538480T1 (enExample)
TW (1) TWI384497B (enExample)
WO (1) WO2006088709A2 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7381981B2 (en) * 2005-07-29 2008-06-03 International Business Machines Corporation Phase-change TaN resistor based triple-state/multi-state read only memory
US7749896B2 (en) * 2005-08-23 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for forming the same
US8013394B2 (en) * 2007-03-28 2011-09-06 International Business Machines Corporation Integrated circuit having resistor between BEOL interconnect and FEOL structure and related method
JP2011082195A (ja) * 2008-02-04 2011-04-21 Alps Electric Co Ltd 半導体装置及びその製造方法
US8426745B2 (en) * 2009-11-30 2013-04-23 Intersil Americas Inc. Thin film resistor
US8169811B2 (en) * 2010-07-13 2012-05-01 Nxp B.V. Non-volatile re-programmable memory device
US8455768B2 (en) 2010-11-15 2013-06-04 International Business Machines Corporation Back-end-of-line planar resistor
US8680618B2 (en) * 2011-10-17 2014-03-25 Texas Instruments Incorporated Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
US8890222B2 (en) * 2012-02-03 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Meander line resistor structure
CN103325844B (zh) * 2012-03-19 2017-10-13 联华电子股份有限公司 薄膜电阻结构
US8859386B2 (en) 2012-06-08 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and methods of forming resistors
WO2014205634A1 (zh) * 2013-06-24 2014-12-31 吉瑞高新科技股份有限公司 电子烟发热装置及电子烟
US9502284B2 (en) * 2013-12-31 2016-11-22 Texas Instruments Incorporated Metal thin film resistor and process
US9773779B2 (en) * 2015-08-06 2017-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with resistor layer and method for forming the same
US10037990B2 (en) * 2016-07-01 2018-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing interconnect layer and semiconductor device which includes interconnect layer
US20180019298A1 (en) * 2016-07-18 2018-01-18 Raytheon Company METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERS
US10211278B2 (en) * 2017-07-11 2019-02-19 Texas Instruments Incorporated Device and method for a thin film resistor using a via retardation layer
US10763324B2 (en) 2017-07-25 2020-09-01 Microchip Technology Incorporated Systems and methods for forming a thin film resistor integrated in an integrated circuit device
US12438080B2 (en) * 2018-09-28 2025-10-07 Intel Corporation And process for a precision resistor
US11756786B2 (en) 2019-01-18 2023-09-12 International Business Machines Corporation Forming high carbon content flowable dielectric film with low processing damage
US11088024B2 (en) * 2019-04-11 2021-08-10 Microchip Technology Incorporated Forming a thin film resistor (TFR) in an integrated circuit device
KR102732300B1 (ko) * 2019-07-17 2024-11-19 삼성전자주식회사 반도체 장치 및 이의 제조 방법
TW202125541A (zh) * 2019-12-18 2021-07-01 光頡科技股份有限公司 薄膜電阻元件
US11990257B2 (en) * 2020-02-27 2024-05-21 Microchip Technology Incorporated Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap
US20210305155A1 (en) * 2020-03-30 2021-09-30 Qualcomm Incorporated Via zero interconnect layer metal resistor integration
US12132075B2 (en) * 2021-08-26 2024-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method (and related apparatus) for forming a resistor over a semiconductor substrate

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166279A (en) * 1977-12-30 1979-08-28 International Business Machines Corporation Electromigration resistance in gold thin film conductors
US4217570A (en) * 1978-05-30 1980-08-12 Tektronix, Inc. Thin-film microcircuits adapted for laser trimming
US4232059A (en) 1979-06-06 1980-11-04 E-Systems, Inc. Process of defining film patterns on microelectronic substrates by air abrading
US5356869A (en) * 1987-09-28 1994-10-18 Arch Development Corporation Metal oxide superconducting powder comprised of flake-like single crystal particles
JPH03132022A (ja) 1989-10-18 1991-06-05 Hitachi Ltd 半導体装置の製造方法およびその装置
JPH04221850A (ja) * 1990-12-20 1992-08-12 Murata Mfg Co Ltd 薄膜抵抗体
US5783483A (en) 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
US5817574A (en) 1993-12-29 1998-10-06 Intel Corporation Method of forming a high surface area interconnection structure
JP3510943B2 (ja) 1995-10-27 2004-03-29 株式会社ルネサステクノロジ 半導体装置の製造方法
US6054659A (en) * 1998-03-09 2000-04-25 General Motors Corporation Integrated electrostatically-actuated micromachined all-metal micro-relays
JP2001071499A (ja) 1998-09-30 2001-03-21 Canon Inc インクジェット記録ヘッドとこれを備えるインクジェット装置およびインクジェット記録方法
US6545359B1 (en) 1998-12-18 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof
US6703666B1 (en) * 1999-07-14 2004-03-09 Agere Systems Inc. Thin film resistor device and a method of manufacture therefor
JP2001223334A (ja) * 2000-02-09 2001-08-17 Toshiba Corp 半導体装置製造方法および半導体装置
JP3715502B2 (ja) * 2000-03-14 2005-11-09 株式会社東芝 半導体装置及びその製造方法
TW471163B (en) * 2000-08-17 2002-01-01 United Microelectronics Corp Manufacturing method and structure of thin film resistor having a high resistance value
US7214295B2 (en) * 2001-04-09 2007-05-08 Vishay Dale Electronics, Inc. Method for tantalum pentoxide moisture barrier in film resistors
US6599827B1 (en) 2001-05-02 2003-07-29 Advanced Micro Devices, Inc. Methods of forming capped copper interconnects with improved electromigration resistance
US6432822B1 (en) 2001-05-02 2002-08-13 Advanced Micro Devices, Inc. Method of improving electromigration resistance of capped Cu
US6534374B2 (en) 2001-06-07 2003-03-18 Institute Of Microelectronics Single damascene method for RF IC passive component integration in copper interconnect process
TW495959B (en) * 2001-06-26 2002-07-21 Taiwan Semiconductor Mfg Highly precise semiconductor thin film resistor and the manufacturing method thereof
JP4088052B2 (ja) * 2001-07-17 2008-05-21 株式会社東芝 半導体装置の製造方法
US6933186B2 (en) 2001-09-21 2005-08-23 International Business Machines Corporation Method for BEOL resistor tolerance improvement using anodic oxidation
JP3948263B2 (ja) * 2001-11-28 2007-07-25 ソニー株式会社 半導体装置の製造方法
JP2003243520A (ja) 2002-02-19 2003-08-29 Alps Electric Co Ltd 半導体装置及び半導体装置の製造方法
JP3969192B2 (ja) 2002-05-30 2007-09-05 株式会社デンソー 多層配線基板の製造方法
DE10224167B4 (de) 2002-05-31 2007-01-25 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Kupferleitung mit erhöhter Widerstandsfähigkeit gegen Elektromigration in einem Halbleiterelement
US6730573B1 (en) * 2002-11-01 2004-05-04 Chartered Semiconductor Manufacturing Ltd. MIM and metal resistor formation at CU beol using only one extra mask
US6872655B2 (en) 2003-02-04 2005-03-29 Texas Instruments Incorporated Method of forming an integrated circuit thin film resistor
US6858527B2 (en) 2003-04-14 2005-02-22 Intel Corporation Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers
TWI224820B (en) * 2003-10-03 2004-12-01 Mosel Vitelic Inc Method for manufacturing trench-typed MOSFET

Also Published As

Publication number Publication date
TW200643992A (en) 2006-12-16
US20060181388A1 (en) 2006-08-17
JP2008530820A (ja) 2008-08-07
CN101647075A (zh) 2010-02-10
CN101647075B (zh) 2011-08-31
WO2006088709A2 (en) 2006-08-24
US7271700B2 (en) 2007-09-18
ATE538480T1 (de) 2012-01-15
TWI384497B (zh) 2013-02-01
EP1849167A4 (en) 2010-06-09
EP1849167A2 (en) 2007-10-31
EP1849167B1 (en) 2011-12-21
WO2006088709A3 (en) 2009-04-30

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