CN101647075A - 具有电流密度增强层的薄膜电阻 - Google Patents
具有电流密度增强层的薄膜电阻 Download PDFInfo
- Publication number
- CN101647075A CN101647075A CN200680004973.6A CN200680004973A CN101647075A CN 101647075 A CN101647075 A CN 101647075A CN 200680004973 A CN200680004973 A CN 200680004973A CN 101647075 A CN101647075 A CN 101647075A
- Authority
- CN
- China
- Prior art keywords
- film resistor
- layer
- cdel
- current density
- resistor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 31
- 239000010409 thin film Substances 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000011810 insulating material Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 114
- 238000000151 deposition Methods 0.000 description 20
- 238000005530 etching Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 11
- 230000035882 stress Effects 0.000 description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000002708 enhancing effect Effects 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- -1 Tantalum nitride Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/906,365 | 2005-02-16 | ||
US10/906,365 US7271700B2 (en) | 2005-02-16 | 2005-02-16 | Thin film resistor with current density enhancing layer (CDEL) |
PCT/US2006/004436 WO2006088709A2 (en) | 2005-02-16 | 2006-02-08 | Thin film resistors with current density enhancing layer (cdel) |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101647075A true CN101647075A (zh) | 2010-02-10 |
CN101647075B CN101647075B (zh) | 2011-08-31 |
Family
ID=36815104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200680004973.6A Active CN101647075B (zh) | 2005-02-16 | 2006-02-08 | 具有电流密度增强层的薄膜电阻 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7271700B2 (zh) |
EP (1) | EP1849167B1 (zh) |
JP (1) | JP5063365B2 (zh) |
CN (1) | CN101647075B (zh) |
AT (1) | ATE538480T1 (zh) |
TW (1) | TWI384497B (zh) |
WO (1) | WO2006088709A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102332305A (zh) * | 2010-07-13 | 2012-01-25 | Nxp股份有限公司 | 非易失性可重编程存储器件 |
CN103325844A (zh) * | 2012-03-19 | 2013-09-25 | 联华电子股份有限公司 | 薄膜电阻结构 |
CN105874599A (zh) * | 2013-12-31 | 2016-08-17 | 德克萨斯仪器股份有限公司 | 金属薄膜电阻器及工艺 |
CN110622331A (zh) * | 2017-07-25 | 2019-12-27 | 微芯片技术股份有限公司 | 用于形成集成于集成电路器件中的薄膜电阻器的系统和方法 |
CN113728448A (zh) * | 2019-04-11 | 2021-11-30 | 微芯片技术股份有限公司 | 在集成电路器件中形成薄膜电阻器(tfr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7381981B2 (en) * | 2005-07-29 | 2008-06-03 | International Business Machines Corporation | Phase-change TaN resistor based triple-state/multi-state read only memory |
US7749896B2 (en) * | 2005-08-23 | 2010-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for forming the same |
US8013394B2 (en) * | 2007-03-28 | 2011-09-06 | International Business Machines Corporation | Integrated circuit having resistor between BEOL interconnect and FEOL structure and related method |
JP2011082195A (ja) * | 2008-02-04 | 2011-04-21 | Alps Electric Co Ltd | 半導体装置及びその製造方法 |
US8426745B2 (en) * | 2009-11-30 | 2013-04-23 | Intersil Americas Inc. | Thin film resistor |
US8455768B2 (en) | 2010-11-15 | 2013-06-04 | International Business Machines Corporation | Back-end-of-line planar resistor |
US8680618B2 (en) * | 2011-10-17 | 2014-03-25 | Texas Instruments Incorporated | Structure and method for integrating front end SiCr resistors in HiK metal gate technologies |
US8890222B2 (en) * | 2012-02-03 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Meander line resistor structure |
US8859386B2 (en) * | 2012-06-08 | 2014-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices, methods of manufacture thereof, and methods of forming resistors |
WO2014205634A1 (zh) * | 2013-06-24 | 2014-12-31 | 吉瑞高新科技股份有限公司 | 电子烟发热装置及电子烟 |
US9773779B2 (en) * | 2015-08-06 | 2017-09-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure with resistor layer and method for forming the same |
US10037990B2 (en) * | 2016-07-01 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing interconnect layer and semiconductor device which includes interconnect layer |
US20180019298A1 (en) * | 2016-07-18 | 2018-01-18 | Raytheon Company | METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERS |
US10211278B2 (en) * | 2017-07-11 | 2019-02-19 | Texas Instruments Incorporated | Device and method for a thin film resistor using a via retardation layer |
US11756786B2 (en) * | 2019-01-18 | 2023-09-12 | International Business Machines Corporation | Forming high carbon content flowable dielectric film with low processing damage |
TW202125541A (zh) * | 2019-12-18 | 2021-07-01 | 光頡科技股份有限公司 | 薄膜電阻元件 |
US11990257B2 (en) * | 2020-02-27 | 2024-05-21 | Microchip Technology Incorporated | Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap |
US20210305155A1 (en) * | 2020-03-30 | 2021-09-30 | Qualcomm Incorporated | Via zero interconnect layer metal resistor integration |
US20230063793A1 (en) * | 2021-08-26 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method (and related apparatus) for forming a resistor over a semiconductor substrate |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4166279A (en) * | 1977-12-30 | 1979-08-28 | International Business Machines Corporation | Electromigration resistance in gold thin film conductors |
US4217570A (en) * | 1978-05-30 | 1980-08-12 | Tektronix, Inc. | Thin-film microcircuits adapted for laser trimming |
US4232059A (en) * | 1979-06-06 | 1980-11-04 | E-Systems, Inc. | Process of defining film patterns on microelectronic substrates by air abrading |
US5356869A (en) * | 1987-09-28 | 1994-10-18 | Arch Development Corporation | Metal oxide superconducting powder comprised of flake-like single crystal particles |
JPH03132022A (ja) | 1989-10-18 | 1991-06-05 | Hitachi Ltd | 半導体装置の製造方法およびその装置 |
JPH04221850A (ja) * | 1990-12-20 | 1992-08-12 | Murata Mfg Co Ltd | 薄膜抵抗体 |
US5679982A (en) * | 1993-02-24 | 1997-10-21 | Intel Corporation | Barrier against metal diffusion |
US5817574A (en) * | 1993-12-29 | 1998-10-06 | Intel Corporation | Method of forming a high surface area interconnection structure |
JP3510943B2 (ja) | 1995-10-27 | 2004-03-29 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6054659A (en) * | 1998-03-09 | 2000-04-25 | General Motors Corporation | Integrated electrostatically-actuated micromachined all-metal micro-relays |
JP2001071499A (ja) * | 1998-09-30 | 2001-03-21 | Canon Inc | インクジェット記録ヘッドとこれを備えるインクジェット装置およびインクジェット記録方法 |
US6545359B1 (en) * | 1998-12-18 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof |
US6703666B1 (en) * | 1999-07-14 | 2004-03-09 | Agere Systems Inc. | Thin film resistor device and a method of manufacture therefor |
JP2001223334A (ja) * | 2000-02-09 | 2001-08-17 | Toshiba Corp | 半導体装置製造方法および半導体装置 |
JP3715502B2 (ja) * | 2000-03-14 | 2005-11-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
TW471163B (en) * | 2000-08-17 | 2002-01-01 | United Microelectronics Corp | Manufacturing method and structure of thin film resistor having a high resistance value |
US7214295B2 (en) * | 2001-04-09 | 2007-05-08 | Vishay Dale Electronics, Inc. | Method for tantalum pentoxide moisture barrier in film resistors |
US6432822B1 (en) * | 2001-05-02 | 2002-08-13 | Advanced Micro Devices, Inc. | Method of improving electromigration resistance of capped Cu |
US6599827B1 (en) * | 2001-05-02 | 2003-07-29 | Advanced Micro Devices, Inc. | Methods of forming capped copper interconnects with improved electromigration resistance |
US6534374B2 (en) * | 2001-06-07 | 2003-03-18 | Institute Of Microelectronics | Single damascene method for RF IC passive component integration in copper interconnect process |
TW495959B (en) * | 2001-06-26 | 2002-07-21 | Taiwan Semiconductor Mfg | Highly precise semiconductor thin film resistor and the manufacturing method thereof |
JP4088052B2 (ja) * | 2001-07-17 | 2008-05-21 | 株式会社東芝 | 半導体装置の製造方法 |
US6933186B2 (en) * | 2001-09-21 | 2005-08-23 | International Business Machines Corporation | Method for BEOL resistor tolerance improvement using anodic oxidation |
JP3948263B2 (ja) * | 2001-11-28 | 2007-07-25 | ソニー株式会社 | 半導体装置の製造方法 |
JP2003243520A (ja) | 2002-02-19 | 2003-08-29 | Alps Electric Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP3969192B2 (ja) * | 2002-05-30 | 2007-09-05 | 株式会社デンソー | 多層配線基板の製造方法 |
DE10224167B4 (de) * | 2002-05-31 | 2007-01-25 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung einer Kupferleitung mit erhöhter Widerstandsfähigkeit gegen Elektromigration in einem Halbleiterelement |
US6730573B1 (en) * | 2002-11-01 | 2004-05-04 | Chartered Semiconductor Manufacturing Ltd. | MIM and metal resistor formation at CU beol using only one extra mask |
US6872655B2 (en) * | 2003-02-04 | 2005-03-29 | Texas Instruments Incorporated | Method of forming an integrated circuit thin film resistor |
US6858527B2 (en) * | 2003-04-14 | 2005-02-22 | Intel Corporation | Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers |
TWI224820B (en) * | 2003-10-03 | 2004-12-01 | Mosel Vitelic Inc | Method for manufacturing trench-typed MOSFET |
-
2005
- 2005-02-16 US US10/906,365 patent/US7271700B2/en active Active
-
2006
- 2006-02-07 TW TW095104024A patent/TWI384497B/zh active
- 2006-02-08 WO PCT/US2006/004436 patent/WO2006088709A2/en active Application Filing
- 2006-02-08 CN CN200680004973.6A patent/CN101647075B/zh active Active
- 2006-02-08 EP EP06720491A patent/EP1849167B1/en active Active
- 2006-02-08 AT AT06720491T patent/ATE538480T1/de active
- 2006-02-08 JP JP2007556200A patent/JP5063365B2/ja not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102332305A (zh) * | 2010-07-13 | 2012-01-25 | Nxp股份有限公司 | 非易失性可重编程存储器件 |
CN102332305B (zh) * | 2010-07-13 | 2014-07-30 | Nxp股份有限公司 | 非易失性可重编程存储器件 |
CN103325844A (zh) * | 2012-03-19 | 2013-09-25 | 联华电子股份有限公司 | 薄膜电阻结构 |
CN105874599A (zh) * | 2013-12-31 | 2016-08-17 | 德克萨斯仪器股份有限公司 | 金属薄膜电阻器及工艺 |
CN110622331A (zh) * | 2017-07-25 | 2019-12-27 | 微芯片技术股份有限公司 | 用于形成集成于集成电路器件中的薄膜电阻器的系统和方法 |
CN110622331B (zh) * | 2017-07-25 | 2023-07-18 | 微芯片技术股份有限公司 | 用于形成集成于集成电路器件中的薄膜电阻器的系统和方法 |
CN113728448A (zh) * | 2019-04-11 | 2021-11-30 | 微芯片技术股份有限公司 | 在集成电路器件中形成薄膜电阻器(tfr) |
Also Published As
Publication number | Publication date |
---|---|
TW200643992A (en) | 2006-12-16 |
WO2006088709A2 (en) | 2006-08-24 |
CN101647075B (zh) | 2011-08-31 |
TWI384497B (zh) | 2013-02-01 |
JP2008530820A (ja) | 2008-08-07 |
EP1849167A2 (en) | 2007-10-31 |
WO2006088709A3 (en) | 2009-04-30 |
US20060181388A1 (en) | 2006-08-17 |
US7271700B2 (en) | 2007-09-18 |
ATE538480T1 (de) | 2012-01-15 |
JP5063365B2 (ja) | 2012-10-31 |
EP1849167B1 (en) | 2011-12-21 |
EP1849167A4 (en) | 2010-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101647075B (zh) | 具有电流密度增强层的薄膜电阻 | |
US7696603B2 (en) | Back end thin film capacitor having both plates of thin film resistor material at single metallization layer | |
US10373905B2 (en) | Integrating metal-insulator-metal capacitors with air gap process flow | |
KR100714765B1 (ko) | O tcr을 지닌 박막 레지스터의 제조 방법 | |
US7375002B2 (en) | MIM capacitor in a semiconductor device and method therefor | |
US20060197183A1 (en) | Improved mim capacitor structure and process | |
WO2015103394A2 (en) | A metal thin film resistor and process | |
US20070181974A1 (en) | Planar vertical resistor and bond pad resistor and related method | |
JP2007329478A (ja) | 超小型電子部品構造体、超小型電子部品構造体を製造する方法 | |
US20070176295A1 (en) | Contact via scheme with staggered vias | |
CN108028253B (zh) | 低薄层电阻meol电阻器的方法与设计 | |
TWI278981B (en) | Semiconductor device and production method therefor | |
US11637100B2 (en) | Semiconductor device having capacitor and resistor and a method of forming the same | |
JP2000332203A (ja) | 半導体装置およびその製造方法 | |
US20240153864A1 (en) | Metallization levels with skip via and dielectric layer | |
TWI822337B (zh) | 半導體結構及其製造方法 | |
US20230361158A1 (en) | Resistor structure in integrated circuit | |
US10707166B2 (en) | Advanced metal interconnects | |
JP4165202B2 (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171122 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171122 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
TR01 | Transfer of patent right |