ATE538480T1 - Dünnfilmwiderstand mit einer stromdichteverstärkungsschicht - Google Patents

Dünnfilmwiderstand mit einer stromdichteverstärkungsschicht

Info

Publication number
ATE538480T1
ATE538480T1 AT06720491T AT06720491T ATE538480T1 AT E538480 T1 ATE538480 T1 AT E538480T1 AT 06720491 T AT06720491 T AT 06720491T AT 06720491 T AT06720491 T AT 06720491T AT E538480 T1 ATE538480 T1 AT E538480T1
Authority
AT
Austria
Prior art keywords
thin film
film resistor
cdel
current density
conductor material
Prior art date
Application number
AT06720491T
Other languages
English (en)
Inventor
Anil Chinthakindi
Ebenezer Eshun
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE538480T1 publication Critical patent/ATE538480T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
AT06720491T 2005-02-16 2006-02-08 Dünnfilmwiderstand mit einer stromdichteverstärkungsschicht ATE538480T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/906,365 US7271700B2 (en) 2005-02-16 2005-02-16 Thin film resistor with current density enhancing layer (CDEL)
PCT/US2006/004436 WO2006088709A2 (en) 2005-02-16 2006-02-08 Thin film resistors with current density enhancing layer (cdel)

Publications (1)

Publication Number Publication Date
ATE538480T1 true ATE538480T1 (de) 2012-01-15

Family

ID=36815104

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06720491T ATE538480T1 (de) 2005-02-16 2006-02-08 Dünnfilmwiderstand mit einer stromdichteverstärkungsschicht

Country Status (7)

Country Link
US (1) US7271700B2 (de)
EP (1) EP1849167B1 (de)
JP (1) JP5063365B2 (de)
CN (1) CN101647075B (de)
AT (1) ATE538480T1 (de)
TW (1) TWI384497B (de)
WO (1) WO2006088709A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7381981B2 (en) * 2005-07-29 2008-06-03 International Business Machines Corporation Phase-change TaN resistor based triple-state/multi-state read only memory
US7749896B2 (en) * 2005-08-23 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for forming the same
US8013394B2 (en) * 2007-03-28 2011-09-06 International Business Machines Corporation Integrated circuit having resistor between BEOL interconnect and FEOL structure and related method
JP2011082195A (ja) * 2008-02-04 2011-04-21 Alps Electric Co Ltd 半導体装置及びその製造方法
US8426745B2 (en) * 2009-11-30 2013-04-23 Intersil Americas Inc. Thin film resistor
US8169811B2 (en) * 2010-07-13 2012-05-01 Nxp B.V. Non-volatile re-programmable memory device
US8455768B2 (en) 2010-11-15 2013-06-04 International Business Machines Corporation Back-end-of-line planar resistor
US8680618B2 (en) * 2011-10-17 2014-03-25 Texas Instruments Incorporated Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
US8890222B2 (en) * 2012-02-03 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Meander line resistor structure
CN103325844B (zh) * 2012-03-19 2017-10-13 联华电子股份有限公司 薄膜电阻结构
US8859386B2 (en) * 2012-06-08 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and methods of forming resistors
WO2014205634A1 (zh) * 2013-06-24 2014-12-31 吉瑞高新科技股份有限公司 电子烟发热装置及电子烟
US9502284B2 (en) * 2013-12-31 2016-11-22 Texas Instruments Incorporated Metal thin film resistor and process
US9773779B2 (en) * 2015-08-06 2017-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with resistor layer and method for forming the same
US10037990B2 (en) * 2016-07-01 2018-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing interconnect layer and semiconductor device which includes interconnect layer
US20180019298A1 (en) * 2016-07-18 2018-01-18 Raytheon Company METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERS
US10211278B2 (en) * 2017-07-11 2019-02-19 Texas Instruments Incorporated Device and method for a thin film resistor using a via retardation layer
US10763324B2 (en) 2017-07-25 2020-09-01 Microchip Technology Incorporated Systems and methods for forming a thin film resistor integrated in an integrated circuit device
US11756786B2 (en) * 2019-01-18 2023-09-12 International Business Machines Corporation Forming high carbon content flowable dielectric film with low processing damage
US11088024B2 (en) * 2019-04-11 2021-08-10 Microchip Technology Incorporated Forming a thin film resistor (TFR) in an integrated circuit device
TW202125541A (zh) * 2019-12-18 2021-07-01 光頡科技股份有限公司 薄膜電阻元件
US11990257B2 (en) * 2020-02-27 2024-05-21 Microchip Technology Incorporated Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap
US20210305155A1 (en) * 2020-03-30 2021-09-30 Qualcomm Incorporated Via zero interconnect layer metal resistor integration
US20230063793A1 (en) * 2021-08-26 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method (and related apparatus) for forming a resistor over a semiconductor substrate

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166279A (en) * 1977-12-30 1979-08-28 International Business Machines Corporation Electromigration resistance in gold thin film conductors
US4217570A (en) * 1978-05-30 1980-08-12 Tektronix, Inc. Thin-film microcircuits adapted for laser trimming
US4232059A (en) * 1979-06-06 1980-11-04 E-Systems, Inc. Process of defining film patterns on microelectronic substrates by air abrading
US5356869A (en) * 1987-09-28 1994-10-18 Arch Development Corporation Metal oxide superconducting powder comprised of flake-like single crystal particles
JPH03132022A (ja) 1989-10-18 1991-06-05 Hitachi Ltd 半導体装置の製造方法およびその装置
JPH04221850A (ja) * 1990-12-20 1992-08-12 Murata Mfg Co Ltd 薄膜抵抗体
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
US5817574A (en) * 1993-12-29 1998-10-06 Intel Corporation Method of forming a high surface area interconnection structure
JP3510943B2 (ja) 1995-10-27 2004-03-29 株式会社ルネサステクノロジ 半導体装置の製造方法
US6054659A (en) * 1998-03-09 2000-04-25 General Motors Corporation Integrated electrostatically-actuated micromachined all-metal micro-relays
JP2001071499A (ja) * 1998-09-30 2001-03-21 Canon Inc インクジェット記録ヘッドとこれを備えるインクジェット装置およびインクジェット記録方法
US6545359B1 (en) * 1998-12-18 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof
US6703666B1 (en) * 1999-07-14 2004-03-09 Agere Systems Inc. Thin film resistor device and a method of manufacture therefor
JP2001223334A (ja) * 2000-02-09 2001-08-17 Toshiba Corp 半導体装置製造方法および半導体装置
JP3715502B2 (ja) * 2000-03-14 2005-11-09 株式会社東芝 半導体装置及びその製造方法
TW471163B (en) * 2000-08-17 2002-01-01 United Microelectronics Corp Manufacturing method and structure of thin film resistor having a high resistance value
US7214295B2 (en) * 2001-04-09 2007-05-08 Vishay Dale Electronics, Inc. Method for tantalum pentoxide moisture barrier in film resistors
US6599827B1 (en) * 2001-05-02 2003-07-29 Advanced Micro Devices, Inc. Methods of forming capped copper interconnects with improved electromigration resistance
US6432822B1 (en) * 2001-05-02 2002-08-13 Advanced Micro Devices, Inc. Method of improving electromigration resistance of capped Cu
US6534374B2 (en) * 2001-06-07 2003-03-18 Institute Of Microelectronics Single damascene method for RF IC passive component integration in copper interconnect process
TW495959B (en) * 2001-06-26 2002-07-21 Taiwan Semiconductor Mfg Highly precise semiconductor thin film resistor and the manufacturing method thereof
JP4088052B2 (ja) * 2001-07-17 2008-05-21 株式会社東芝 半導体装置の製造方法
US6933186B2 (en) * 2001-09-21 2005-08-23 International Business Machines Corporation Method for BEOL resistor tolerance improvement using anodic oxidation
JP3948263B2 (ja) * 2001-11-28 2007-07-25 ソニー株式会社 半導体装置の製造方法
JP2003243520A (ja) 2002-02-19 2003-08-29 Alps Electric Co Ltd 半導体装置及び半導体装置の製造方法
JP3969192B2 (ja) * 2002-05-30 2007-09-05 株式会社デンソー 多層配線基板の製造方法
DE10224167B4 (de) * 2002-05-31 2007-01-25 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Kupferleitung mit erhöhter Widerstandsfähigkeit gegen Elektromigration in einem Halbleiterelement
US6730573B1 (en) * 2002-11-01 2004-05-04 Chartered Semiconductor Manufacturing Ltd. MIM and metal resistor formation at CU beol using only one extra mask
US6872655B2 (en) * 2003-02-04 2005-03-29 Texas Instruments Incorporated Method of forming an integrated circuit thin film resistor
US6858527B2 (en) * 2003-04-14 2005-02-22 Intel Corporation Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers
TWI224820B (en) * 2003-10-03 2004-12-01 Mosel Vitelic Inc Method for manufacturing trench-typed MOSFET

Also Published As

Publication number Publication date
US20060181388A1 (en) 2006-08-17
WO2006088709A3 (en) 2009-04-30
TWI384497B (zh) 2013-02-01
JP2008530820A (ja) 2008-08-07
CN101647075B (zh) 2011-08-31
EP1849167A4 (de) 2010-06-09
EP1849167B1 (de) 2011-12-21
TW200643992A (en) 2006-12-16
WO2006088709A2 (en) 2006-08-24
JP5063365B2 (ja) 2012-10-31
CN101647075A (zh) 2010-02-10
US7271700B2 (en) 2007-09-18
EP1849167A2 (de) 2007-10-31

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