ATE551702T1 - Widerstand mit vorbestimmtem temperaturkoeffizienten - Google Patents
Widerstand mit vorbestimmtem temperaturkoeffizientenInfo
- Publication number
- ATE551702T1 ATE551702T1 AT05794713T AT05794713T ATE551702T1 AT E551702 T1 ATE551702 T1 AT E551702T1 AT 05794713 T AT05794713 T AT 05794713T AT 05794713 T AT05794713 T AT 05794713T AT E551702 T1 ATE551702 T1 AT E551702T1
- Authority
- AT
- Austria
- Prior art keywords
- temperature coefficient
- resistance
- predetermined temperature
- magnetic field
- same
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/962,889 US7777607B2 (en) | 2004-10-12 | 2004-10-12 | Resistor having a predetermined temperature coefficient |
PCT/US2005/029982 WO2006044031A1 (en) | 2004-10-12 | 2005-08-22 | Resistor having a predetermined temperature coefficient |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE551702T1 true ATE551702T1 (de) | 2012-04-15 |
Family
ID=35502739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05794713T ATE551702T1 (de) | 2004-10-12 | 2005-08-22 | Widerstand mit vorbestimmtem temperaturkoeffizienten |
Country Status (5)
Country | Link |
---|---|
US (1) | US7777607B2 (de) |
EP (1) | EP1810302B1 (de) |
JP (3) | JP4722934B2 (de) |
AT (1) | ATE551702T1 (de) |
WO (1) | WO2006044031A1 (de) |
Families Citing this family (59)
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US7259545B2 (en) | 2003-02-11 | 2007-08-21 | Allegro Microsystems, Inc. | Integrated sensor |
US7777607B2 (en) | 2004-10-12 | 2010-08-17 | Allegro Microsystems, Inc. | Resistor having a predetermined temperature coefficient |
US7768083B2 (en) | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
US7573112B2 (en) | 2006-04-14 | 2009-08-11 | Allegro Microsystems, Inc. | Methods and apparatus for sensor having capacitor on chip |
US7687882B2 (en) * | 2006-04-14 | 2010-03-30 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor |
US20080013298A1 (en) | 2006-07-14 | 2008-01-17 | Nirmal Sharma | Methods and apparatus for passive attachment of components for integrated circuits |
WO2008093699A1 (ja) * | 2007-02-02 | 2008-08-07 | Alps Electric Co., Ltd. | 磁気検出装置及びその製造方法 |
US7795862B2 (en) | 2007-10-22 | 2010-09-14 | Allegro Microsystems, Inc. | Matching of GMR sensors in a bridge |
US9823090B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a target object |
US7816905B2 (en) * | 2008-06-02 | 2010-10-19 | Allegro Microsystems, Inc. | Arrangements for a current sensing circuit and integrated current sensor |
US8093670B2 (en) * | 2008-07-24 | 2012-01-10 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions |
US20100052424A1 (en) * | 2008-08-26 | 2010-03-04 | Taylor William P | Methods and apparatus for integrated circuit having integrated energy storage device |
EP2442117B1 (de) | 2009-06-12 | 2021-11-17 | Alps Alpine Co., Ltd. | Magnetisch ausbalancierter stromsensor |
EP2442118B1 (de) | 2009-06-12 | 2021-11-10 | Alps Alpine Co., Ltd. | Magnetisch ausbalancierter stromsensor |
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JP5411285B2 (ja) * | 2009-10-05 | 2014-02-12 | アルプス・グリーンデバイス株式会社 | 磁気平衡式電流センサ |
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JP5794777B2 (ja) | 2010-12-22 | 2015-10-14 | 三菱電機株式会社 | 半導体装置 |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US9666788B2 (en) | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9812588B2 (en) | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
US9529060B2 (en) | 2014-01-09 | 2016-12-27 | Allegro Microsystems, Llc | Magnetoresistance element with improved response to magnetic fields |
US9719806B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a ferromagnetic target object |
JP6482023B2 (ja) * | 2015-05-22 | 2019-03-13 | アルプスアルパイン株式会社 | 磁気センサ |
WO2016196157A1 (en) | 2015-06-05 | 2016-12-08 | Allegro Microsystems, Llc | Spin valve magnetoresistance element with improved response to magnetic fields |
US10411498B2 (en) | 2015-10-21 | 2019-09-10 | Allegro Microsystems, Llc | Apparatus and methods for extending sensor integrated circuit operation through a power disturbance |
CA3014830A1 (en) * | 2015-12-08 | 2017-06-15 | Eaton Intelligent Power Limited | Constant power supply for thermo-electric cells |
US10114085B2 (en) | 2016-03-04 | 2018-10-30 | Allegro Microsystems, Llc | Magnetic field sensor with improved response immunity |
US9910087B2 (en) | 2016-03-14 | 2018-03-06 | Allegro Microsystems, Llc | Integrated circuit and method for detecting a stress condition in the integrated circuit |
US10036785B2 (en) | 2016-07-18 | 2018-07-31 | Allegro Microsystems, Llc | Temperature-compensated magneto-resistive sensor |
DE102017004349A1 (de) | 2017-05-08 | 2018-11-08 | Tdk-Micronas Gmbh | Magnetfeldkompensationseinrichtung |
US10620279B2 (en) | 2017-05-19 | 2020-04-14 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
US11022661B2 (en) | 2017-05-19 | 2021-06-01 | Allegro Microsystems, Llc | Magnetoresistance element with increased operational range |
JP6658676B2 (ja) * | 2017-06-13 | 2020-03-04 | Tdk株式会社 | 電流センサ |
US10768246B2 (en) * | 2017-09-21 | 2020-09-08 | Tdk Corporation | Magnetic sensor with elongated soft magnetic body |
US10921373B2 (en) * | 2017-11-29 | 2021-02-16 | Allegro Microsystems, Llc | Magnetic field sensor able to identify an error condition |
JP7232647B2 (ja) * | 2018-03-29 | 2023-03-03 | 旭化成エレクトロニクス株式会社 | 磁気検出装置 |
US11002806B2 (en) * | 2018-03-29 | 2021-05-11 | Asahi Kasei Microdevices Corporation | Magnetic field detection device |
US10978897B2 (en) | 2018-04-02 | 2021-04-13 | Allegro Microsystems, Llc | Systems and methods for suppressing undesirable voltage supply artifacts |
US10605874B2 (en) | 2018-08-06 | 2020-03-31 | Allegro Microsystems, Llc | Magnetic field sensor with magnetoresistance elements having varying sensitivity |
US10935612B2 (en) | 2018-08-20 | 2021-03-02 | Allegro Microsystems, Llc | Current sensor having multiple sensitivity ranges |
US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
JP7140149B2 (ja) | 2020-01-31 | 2022-09-21 | Tdk株式会社 | 電流センサ、磁気センサ及び回路 |
US11385075B2 (en) | 2020-02-21 | 2022-07-12 | Allegro Microsystems, Llc | Orientation independent magnetic field sensor |
US11163021B2 (en) | 2020-03-05 | 2021-11-02 | Allegro Microsystems, Llc | Sensors having signal redundancy |
US11561112B2 (en) | 2020-03-13 | 2023-01-24 | Allegro Microsystems, Llc | Current sensor having stray field immunity |
US11187764B2 (en) | 2020-03-20 | 2021-11-30 | Allegro Microsystems, Llc | Layout of magnetoresistance element |
US11333718B2 (en) | 2020-04-15 | 2022-05-17 | Allegro Microsystems, Llc | Sensors having dynamic phase compensation |
US11262422B2 (en) | 2020-05-08 | 2022-03-01 | Allegro Microsystems, Llc | Stray-field-immune coil-activated position sensor |
US11630168B2 (en) | 2021-02-03 | 2023-04-18 | Allegro Microsystems, Llc | Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction |
US11493361B2 (en) | 2021-02-26 | 2022-11-08 | Allegro Microsystems, Llc | Stray field immune coil-activated sensor |
US11567108B2 (en) | 2021-03-31 | 2023-01-31 | Allegro Microsystems, Llc | Multi-gain channels for multi-range sensor |
US11719771B1 (en) | 2022-06-02 | 2023-08-08 | Allegro Microsystems, Llc | Magnetoresistive sensor having seed layer hysteresis suppression |
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2004
- 2004-10-12 US US10/962,889 patent/US7777607B2/en active Active
-
2005
- 2005-08-22 WO PCT/US2005/029982 patent/WO2006044031A1/en active Application Filing
- 2005-08-22 AT AT05794713T patent/ATE551702T1/de active
- 2005-08-22 EP EP05794713A patent/EP1810302B1/de active Active
- 2005-08-22 JP JP2007536689A patent/JP4722934B2/ja active Active
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WO2006044031A1 (en) | 2006-04-27 |
US20060077598A1 (en) | 2006-04-13 |
JP2011137811A (ja) | 2011-07-14 |
JP2008516255A (ja) | 2008-05-15 |
JP5639212B2 (ja) | 2014-12-10 |
JP4722934B2 (ja) | 2011-07-13 |
US7777607B2 (en) | 2010-08-17 |
JP2013117543A (ja) | 2013-06-13 |
EP1810302A1 (de) | 2007-07-25 |
EP1810302B1 (de) | 2012-03-28 |
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