CN101647075B - 具有电流密度增强层的薄膜电阻 - Google Patents

具有电流密度增强层的薄膜电阻 Download PDF

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Publication number
CN101647075B
CN101647075B CN200680004973.6A CN200680004973A CN101647075B CN 101647075 B CN101647075 B CN 101647075B CN 200680004973 A CN200680004973 A CN 200680004973A CN 101647075 B CN101647075 B CN 101647075B
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Prior art keywords
layer
film resistor
cdel
resistance
resistor according
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CN200680004973.6A
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English (en)
Chinese (zh)
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CN101647075A (zh
Inventor
埃尼尔·K·奇恩萨肯迪
埃贝内泽尔·E·爱顺
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Adjustable Resistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
CN200680004973.6A 2005-02-16 2006-02-08 具有电流密度增强层的薄膜电阻 Active CN101647075B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/906,365 2005-02-16
US10/906,365 US7271700B2 (en) 2005-02-16 2005-02-16 Thin film resistor with current density enhancing layer (CDEL)
PCT/US2006/004436 WO2006088709A2 (en) 2005-02-16 2006-02-08 Thin film resistors with current density enhancing layer (cdel)

Publications (2)

Publication Number Publication Date
CN101647075A CN101647075A (zh) 2010-02-10
CN101647075B true CN101647075B (zh) 2011-08-31

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CN200680004973.6A Active CN101647075B (zh) 2005-02-16 2006-02-08 具有电流密度增强层的薄膜电阻

Country Status (7)

Country Link
US (1) US7271700B2 (enExample)
EP (1) EP1849167B1 (enExample)
JP (1) JP5063365B2 (enExample)
CN (1) CN101647075B (enExample)
AT (1) ATE538480T1 (enExample)
TW (1) TWI384497B (enExample)
WO (1) WO2006088709A2 (enExample)

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US8013394B2 (en) * 2007-03-28 2011-09-06 International Business Machines Corporation Integrated circuit having resistor between BEOL interconnect and FEOL structure and related method
JP2011082195A (ja) * 2008-02-04 2011-04-21 Alps Electric Co Ltd 半導体装置及びその製造方法
US8426745B2 (en) * 2009-11-30 2013-04-23 Intersil Americas Inc. Thin film resistor
US8169811B2 (en) * 2010-07-13 2012-05-01 Nxp B.V. Non-volatile re-programmable memory device
US8455768B2 (en) 2010-11-15 2013-06-04 International Business Machines Corporation Back-end-of-line planar resistor
US8680618B2 (en) * 2011-10-17 2014-03-25 Texas Instruments Incorporated Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
US8890222B2 (en) * 2012-02-03 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Meander line resistor structure
CN103325844B (zh) * 2012-03-19 2017-10-13 联华电子股份有限公司 薄膜电阻结构
US8859386B2 (en) 2012-06-08 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and methods of forming resistors
WO2014205634A1 (zh) * 2013-06-24 2014-12-31 吉瑞高新科技股份有限公司 电子烟发热装置及电子烟
US9502284B2 (en) * 2013-12-31 2016-11-22 Texas Instruments Incorporated Metal thin film resistor and process
US9773779B2 (en) * 2015-08-06 2017-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with resistor layer and method for forming the same
US10037990B2 (en) * 2016-07-01 2018-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing interconnect layer and semiconductor device which includes interconnect layer
US20180019298A1 (en) * 2016-07-18 2018-01-18 Raytheon Company METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERS
US10211278B2 (en) * 2017-07-11 2019-02-19 Texas Instruments Incorporated Device and method for a thin film resistor using a via retardation layer
US10763324B2 (en) 2017-07-25 2020-09-01 Microchip Technology Incorporated Systems and methods for forming a thin film resistor integrated in an integrated circuit device
US12438080B2 (en) * 2018-09-28 2025-10-07 Intel Corporation And process for a precision resistor
US11756786B2 (en) 2019-01-18 2023-09-12 International Business Machines Corporation Forming high carbon content flowable dielectric film with low processing damage
US11088024B2 (en) * 2019-04-11 2021-08-10 Microchip Technology Incorporated Forming a thin film resistor (TFR) in an integrated circuit device
KR102732300B1 (ko) * 2019-07-17 2024-11-19 삼성전자주식회사 반도체 장치 및 이의 제조 방법
TW202125541A (zh) * 2019-12-18 2021-07-01 光頡科技股份有限公司 薄膜電阻元件
US11990257B2 (en) * 2020-02-27 2024-05-21 Microchip Technology Incorporated Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap
US20210305155A1 (en) * 2020-03-30 2021-09-30 Qualcomm Incorporated Via zero interconnect layer metal resistor integration
US12132075B2 (en) * 2021-08-26 2024-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method (and related apparatus) for forming a resistor over a semiconductor substrate

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Also Published As

Publication number Publication date
TW200643992A (en) 2006-12-16
US20060181388A1 (en) 2006-08-17
JP2008530820A (ja) 2008-08-07
CN101647075A (zh) 2010-02-10
WO2006088709A2 (en) 2006-08-24
US7271700B2 (en) 2007-09-18
ATE538480T1 (de) 2012-01-15
TWI384497B (zh) 2013-02-01
JP5063365B2 (ja) 2012-10-31
EP1849167A4 (en) 2010-06-09
EP1849167A2 (en) 2007-10-31
EP1849167B1 (en) 2011-12-21
WO2006088709A3 (en) 2009-04-30

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Effective date of registration: 20171122

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171122

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.