JP4906722B2 - 高性能cmosのためのfeol/meol金属抵抗器 - Google Patents
高性能cmosのためのfeol/meol金属抵抗器 Download PDFInfo
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- JP4906722B2 JP4906722B2 JP2007524957A JP2007524957A JP4906722B2 JP 4906722 B2 JP4906722 B2 JP 4906722B2 JP 2007524957 A JP2007524957 A JP 2007524957A JP 2007524957 A JP2007524957 A JP 2007524957A JP 4906722 B2 JP4906722 B2 JP 4906722B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 80
- 239000002184 metal Substances 0.000 title claims description 80
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000003989 dielectric material Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 13
- 238000001465 metallisation Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 description 34
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 33
- 238000000034 method Methods 0.000 description 30
- 238000000137 annealing Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 238000005137 deposition process Methods 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 229910004166 TaN Inorganic materials 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000000224 chemical solution deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
表面上に配置された少なくとも1つのフロント・エンド・オブ・ザ・ライン(FEOL)デバイスを含む半導体基板と、
前述の半導体基板の前述の表面上に又はこれに近接して配置された、少なくとも導電性金属を含む少なくとも1つの抵抗器と、
前述の少なくとも1つの抵抗器上の第1のメタライゼーション・レベルと、
を含む半導体IC構造体を提供する。
少なくとも1つのFEOLデバイスを半導体基板の表面上に形成するステップと、
導電性金属を含む少なくとも1つの抵抗器を前述の半導体基板の表面上に又はこれに近接して形成するステップと、
第1のメタライゼーション・レベルを前述の半導体構造体の上に形成するステップと、
を含む。
半導体基板の表面上に配置された少なくとも1つのFEOLデバイスを含む構造体を与えるステップと、
前述の少なくとも1つのFEOLデバイスを含む前述の構造体上にエッチング停止層を形成するステップと、
導電性金属を前述のエッチング停止層の上に形成するステップと、
誘電材料を前述の導電性金属の上に形成するステップと、
前述の導電性金属及び前述の誘電材料を含むスタックを与えるように、前述の導電性金属及び前述の誘電材料をパターン形成するステップと、
前述の第1のメタライゼーション・レベルを前述の少なくとも1つのFEOLデバイス及び前述のスタックの上に形成するステップと、
を含む。
少なくとも1つのFEOLデバイスを含む半導体基板の表面上に配置された平坦化された誘電材料を含む構造体を与えるステップと、
導電性金属を前述の平坦化された誘電体上に形成するステップと、
誘電材料を前述の導電性金属の上に形成するステップと、
スタックを与えるように、前述の導電性金属及び前述の誘電材料をパターン形成するステップと、
少なくとも前述のスタック、前述の平坦化された誘電体、及び前述の少なくとも1つのFEOLデバイスの上に第1のメタライゼーション・レベルを形成するステップと、
を含む。
半導体基板の表面上に配置された少なくとも1つのFEOLデバイスを含む構造体を与えるステップと、
シリサイド金属層を前述の構造体の上に形成するステップと、
誘電材料を前述のシリサイド金属層の上に形成するステップと、
パターン形成された誘電材料の少なくとも1つのスタックを前述のシリサイド金属層の一部の上に与えるように、前述の誘電材料をパターン形成するステップであって、前述の少なくとも1つのスタックが前述の半導体基板の前述の表面上に配置される、ステップと、
前述の少なくとも1つのスタックの少なくとも前述のシリサイド金属層を金属シリサイドに変換するようにシリサイド化するステップであって、前述のスタックの前述の金属シリサイドが抵抗器の導体を含む、ステップと、
第1のメタライゼーション・レベルを少なくとも前述のスタック及び前述の少なくとも1つのFEOLデバイス上に形成するステップと、
を含む。
最初に、図1ないし図6に示される実施形態について説明する。本実施形態は、図1に示される構造体10を与えることにより始まる。構造体10は、処理済半導体基板12に配置された少なくとも1つのトレンチ分離領域14を含む処理済半導体基板12と、該半導体基板12の表面上に配置された少なくとも1つのFEOLデバイス16とを含む。図面においては、少なくとも1つのFEOLデバイス16は、電界効果トランジスタ(FET)であり、ソース/ドレイン領域18と、ソース/ドレイン領域18の上に配置されたシリサイド領域20と、ゲート誘電体24と、ゲート誘電体24上に配置された任意的なシリサイド領域20’と、少なくとも1つのゲート誘電体24の側壁に配置された少なくとも1つのスペーサ26と、を含む。FETをFEOLデバイスとして示しているが、本発明は、さらに、例えば、バイポーラ・トランジスタ、BiCMOSデバイス、受動デバイス、及び処理のフロント・エンドで形成されるいずれかの他の同様なデバイスを含む他の種類のFEOLデバイスを考慮する。さらに、こうしたFEOLデバイスの組み合わせもまた考慮する。
半導体基板12と、トレンチ分離領域14と、FEOLデバイス16及び16’とを含む図7に示される構造体50について説明する。FEOLデバイス16はFETであり、FEOLデバイス16’はバイポーラ・デバイスである。明確さのために、本発明の図面においては、FEOLデバイス16及び16’は、単一のボックスとして示される。図7に示される構造体は、図1に関して第1の実施形態に説明された技術を用いて形成される。
本実施形態は、抵抗器が、FEOLデバイスのシリサイド化中に形成される金属シリサイドを含む点で上述の実施形態とは異なる。本発明の第3の実施形態は、図13に示される構造体60を与えることから始まる。この構造体は、少なくとも1つのトレンチ分離領域14を含む半導体基板12の表面上に配置された少なくとも1つのFEOLデバイス16を含む。図に例示されるFEOLデバイス16は、まだいずれのシリサイド領域も含まないFETである。FETデバイスが示されているが、第3の実施形態は、シリサイド領域を含む他のFEOLデバイスを扱うことができる。
Claims (6)
- 表面上に配置された少なくとも1つのフロント・エンド・オブ・ザ・ライン(FEOL)デバイスを含む半導体基板と、
前記半導体基板中に設けられたトレンチ分離領域と、
前記トレンチ分離領域上のエッチング停止層と、
前記エッチング停止層上に設けられたスタック構造であって、前記エッチング停止層上の金属抵抗層と当該金属抵抗層上の誘電材料層とからなり、当該金属抵抗層の側壁と当該誘電材料層の側壁とは垂直方向に一致して当該スタック構造の側壁面を構成する、スタック構造と、
前記スタック構造上を含む前記半導体基板上に設けられた第1のメタライゼーション・レベルであって、少なくとも前記スタック構造上および前記エッチング停止層上に設けられた中間誘電材料層と、当該中間誘電材料層の表面から前記スタック構造の前記金属抵抗層の表面に至るコンタクト開口部に充填された導電材料と、を含む第1のメタライゼーション・レベルと、
を備える半導体IC構造体。 - 前記金属抵抗層は、Ta、TaN、Ti、TiN、W、WN、NiCr、およびSiCrからなるグループから選択された少なくとも1つの金属材料を含む、請求項1に記載の半導体IC構造体。
- 前記金属抵抗層は、20〜50nmの厚さを有する、請求項1または2に記載の半導体IC構造体。
- 前記エッチング停止層は、20〜50nmの厚さを有する、請求項1から3のいずれか1項に記載の半導体IC構造体。
- 前記中間誘電材料層は、ポリイミド、ポリアミド、シリコン含有ポリマー、またはホウ素ドープケイ酸塩ガラス(BPSG)を含む、請求項1から4のいずれか1項に記載の半導体IC構造体。
- 前記FEOLデバイスは、FET、バイポーラ・トランジスタ、BiCMOSデバイス、および受動デバイスからなるグループから選択された少なくとも1つを含む、請求項1から5のいずれか1項に記載の半導体IC構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/710,847 | 2004-08-06 | ||
US10/710,847 US7397087B2 (en) | 2004-08-06 | 2004-08-06 | FEOL/MEOL metal resistor for high end CMOS |
PCT/US2005/027618 WO2006017600A2 (en) | 2004-08-06 | 2005-08-04 | Feol/meol metal resistor for high end cmos |
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Publication Number | Publication Date |
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JP2008509561A JP2008509561A (ja) | 2008-03-27 |
JP4906722B2 true JP4906722B2 (ja) | 2012-03-28 |
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JP2007524957A Expired - Fee Related JP4906722B2 (ja) | 2004-08-06 | 2005-08-04 | 高性能cmosのためのfeol/meol金属抵抗器 |
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US (1) | US7397087B2 (ja) |
EP (1) | EP1794778A4 (ja) |
JP (1) | JP4906722B2 (ja) |
KR (1) | KR100974145B1 (ja) |
CN (1) | CN101088145B (ja) |
TW (1) | TWI366266B (ja) |
WO (1) | WO2006017600A2 (ja) |
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KR20070034617A (ko) | 2007-03-28 |
KR100974145B1 (ko) | 2010-08-04 |
EP1794778A4 (en) | 2009-06-03 |
CN101088145B (zh) | 2011-11-09 |
WO2006017600A2 (en) | 2006-02-16 |
JP2008509561A (ja) | 2008-03-27 |
TWI366266B (en) | 2012-06-11 |
TW200620656A (en) | 2006-06-16 |
WO2006017600A3 (en) | 2006-06-22 |
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