JP5058973B2 - 無電解メッキ形成材料、およびこれを用いた無電解メッキの形成方法 - Google Patents
無電解メッキ形成材料、およびこれを用いた無電解メッキの形成方法 Download PDFInfo
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- JP5058973B2 JP5058973B2 JP2008506245A JP2008506245A JP5058973B2 JP 5058973 B2 JP5058973 B2 JP 5058973B2 JP 2008506245 A JP2008506245 A JP 2008506245A JP 2008506245 A JP2008506245 A JP 2008506245A JP 5058973 B2 JP5058973 B2 JP 5058973B2
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/40—Coating with copper using reducing agents
- C23C18/405—Formaldehyde
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Description
また本発明の無電解メッキ形成材料において、好ましくは、水酸基を有する樹脂は、水酸基価が1〜30mgKOH/gである。
さらに本発明の無電解メッキ形成材料は、触媒付着層が、マスク剤でマスクされたブロックイソシアネート化合物を含むことができる。
また本発明の無電解メッキ形成方法は、非導電性基材に無電解メッキを形成する方法であって、非導電性基材の表面に、水酸基を有する樹脂及びイソシアネート系化合物を含む硬化層を形成するステップ、イソシアネート系化合物のイソシアネート基が残存している状態で、硬化層の上に、水酸基を含有してなる親水性及び/又は水溶性樹脂を含む触媒付着層を形成するステップ、及び触媒付着層に触媒を付着させた後、無電解メッキを行うステップを含むことを特徴とするものである。
また非導電性基材は、平面状のものに限られず、立体形状のものであってもよい。
を良好なものとすることができる。
また、一般的には、触媒付着層に触媒を付着させる前に、脱脂処理の他にさらにコンディショニングやプレディップ等の、触媒付着層のぬれ性を向上させる処理や触媒付着層を触媒含有溶液になじませる工程を行うが、本発明では、ぬれ性に優れた触媒付着層を備えた無電解メッキ形成材料を用いていることから、当該工程を省略することができる。
錯化剤、pH調整剤、メッキ助剤、還元剤は従来公知のものを使用することができる。
1.硬化層塗布液の作製
水酸基を有する樹脂として、水酸基価の異なるポリエステル樹脂a〜cを準備し、各ポリエステル樹脂を下記の処方で溶解させ、ポリエステル樹脂10%溶液a〜cを得た。
(バイロン200:東洋紡績社、固形分100%、水酸基価3mgKOH/g)
・ポリエステル樹脂b
(エリーテルUE3690:ユニチカ社、固形分100%、水酸基価8mgKOH/g)
・ポリエステル樹脂c
(エリーテルUE3350:ユニチカ社、固形分100%、水酸基価25mgKOH/g)
<ポリエステル樹脂10%溶液a〜c>
・ポリエステル樹脂a〜cの一つ 10部
・メチルエチルケトン 40部
・トルエン 40部
・アノン 10部
(実施例1の無電解メッキ形成材料の作製)
厚み100μmのポリエステルフィルム(ルミラーT60:東レ社)の一方の面に、硬化層塗布液Aを塗布し、100℃で30秒間乾燥させ、厚み1μmの硬化層を形成した。硬化層形成後直ちに硬化層上に下記処方の触媒付着層塗布液Mを塗布し、110℃で5分間乾燥させ、厚み1.5μmの触媒付着層を形成し、実施例1の無電解メッキ形成材料を得た。
・ポリビニルアルコール 1部
(ゴーセノールNH20:日本合成化学工業社)
・水 9部
硬化層塗布液Aを硬化層塗布液B〜Lに変更した以外は実施例1と同様にして、実施例2〜12の無電解メッキ形成材料を得た。
(比較例1の無電解メッキ形成材料の作製)
硬化層を形成せず、ポリエステルフィルム上に直接触媒付着層を形成した以外は、実施例1と同様にして比較例1の無電解メッキ形成材料を得た。
厚み100μmのポリエステルフィルム(ルミラーT60:東レ社)の一方の面に、下記処方の触媒付着層塗布液Nを塗布し、130℃で15分間乾燥させ、厚み1.5μmの触媒付着層を形成し、比較例2の無電解メッキ形成材料を得た。
・ポリビニルアルコール 1部
(ゴーセノールNH20:日本合成化学工業社)
・ブロックイソシアネート系化合物 0.5部
(タケラックWB700:三井化学ポリウレタン社、解離温度120℃)
・水 9部
(参考例の無電解メッキ形成材料の作製)
硬化層を形成した後触媒付着層を形成する前に、60℃で24時間熱処理を行い、硬化層中のイソシアネート基を完全に反応させた以外は実施例1と同様にして参考例の無電解メッキ形成材料を得た。
(2)触媒付与:触媒浴としてパラジウムおよびスズ混合のコロイド溶液(塩化パラジウム0.1g/L、塩化スズ8g/L)を用い、感受性化処理を60秒、活性化処理を30秒順次行った。
(3)無電解メッキ:下記組成の無電解メッキ浴を用い、浴温60℃、浸漬時間15分の条件で無電解メッキを行った。
<無電解メッキ浴>
・硫酸銅五水和物 0.03M
・EDTA四水和物 0.24M
・ホルマリン 0.20M
・ジピリジル 10ppm
・界面活性剤 100ppm
(4)電解メッキ:電解メッキ浴として硫酸銅メッキ浴(キューブライトTHプロセス:荏原ユージライト社)を用い、約30μmの厚みとなるまで電解メッキを行った。
メッキが均一に形成されているかについて目視で評価を行った。ムラなく均一にメッキが形成されているものを「○」、ムラがあり不均一なものを「×」とした。
メッキ面に隙間間隔1mmの桝目が100個できるように切れ目を入れ、切れ目を入れた箇所にセロハン粘着テープを貼って剥がした後に、膜(電解メッキ、無電解メッキ、触媒付着層、硬化層)が非導電性基材に接着している面積割合を目視で観察した。
電解メッキ上にフォトレジストを塗布し、フォトレジスト上にフォトマスクを設置した後、露光、現像して回路パターンを形成した。回路パターンが形成された無電解メッキ形成材料を酢酸エチル浴に5分間浸漬して引き上げ、膜(電解メッキ、無電解メッキ、触媒付着層、硬化層)の状態を目視で観察した。その結果、膜が非導電性基材から浮き上がっていないものを「○」、膜が非導電性基材から浮き上がっているものを「×」とした。
Claims (7)
- 非導電性基材上に触媒付着層を有する無電解メッキ形成材料において、前記触媒付着層が水酸基を含有してなる親水性及び/又は水溶性樹脂から形成されてなり、前記基材と前記触媒付着層との間に、水酸基を有する樹脂及びイソシアネート系化合物から形成されてなる硬化層を有してなることを特徴とする無電解メッキ形成材料。
- 前記硬化層中のイソシアネート系化合物のイソシアネート基が残存しているうちに、前記触媒付着層を形成してなることを特徴とする請求項1記載の無電解メッキ形成材料。
- 前記水酸基を有する樹脂は、水酸基価が1〜30mgKOH/gであることを特徴とする請求項1記載の無電解メッキ形成材料。
- 前記触媒付着層は、マスク剤でマスクされたブロックイソシアネート化合物を含むことを特徴とする請求項1記載の無電解メッキ形成材料。
- 請求項1ないし4いずれか1項に記載の無電解メッキ形成材料の触媒付着層に触媒を付着させた後、無電解メッキを行うことを特徴とする無電解メッキの形成方法。
- 非導電性基材に無電解メッキを形成する方法であって、
前記非導電性基材の表面に、水酸基を有する樹脂及びイソシアネート系化合物を含む硬化層を形成するステップ、
前記イソシアネート系化合物のイソシアネート基が残存している状態で、前記硬化層の上に、水酸基を含有してなる親水性及び/又は水溶性樹脂を含む触媒付着層を形成するステップ、及び
前記触媒付着層に触媒を付着させた後、無電解メッキを行うステップを含む無電解メッキの形成方法。 - 非導電性基材に無電解メッキを形成する方法であって、
請求項4に記載の無電解メッキ形成材料の触媒付着層に触媒を付着させるステップ、
触媒の付着後にブロックイソシアネート系化合物のマスク剤を解離させて硬化を促進させるステップ、および
無電解メッキを行うステップを含み、
前記触媒付着ステップまでをブロックイソシアネート系化合物のマスク剤が解離しない条件で行なうことを特徴とする無電解メッキの形成方法。
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WO2008096670A1 (ja) * | 2007-02-07 | 2008-08-14 | Kimoto Co., Ltd. | 無電解メッキ形成材料、触媒付着用塗布液、無電解メッキ形成方法、およびメッキ方法 |
BR112013001706A2 (pt) * | 2010-07-23 | 2016-05-31 | Syscom Advanced Materials Inc | processo contínuo para preparação e utilização de fibras revestidas de metal eletricamente condutivo |
WO2012092505A1 (en) | 2010-12-29 | 2012-07-05 | Syscom Advanced Materials | Metal and metallized fiber hybrid wire |
US9138733B2 (en) * | 2011-08-17 | 2015-09-22 | Rohm And Haas Electronic Materials Llc | Stable tin free catalysts for electroless metallization |
EP2559486B1 (en) * | 2011-08-17 | 2017-04-19 | Rohm and Haas Electronic Materials, L.L.C. | Stable catalysts for electroless metallization |
KR101594565B1 (ko) * | 2013-01-23 | 2016-02-17 | 디아이씨 가부시끼가이샤 | 수용층 형성용 조성물, 그것을 사용해서 얻어지는 수용 기재, 인쇄물, 도전성 패턴 및 전기 회로 |
JP6266353B2 (ja) * | 2013-02-20 | 2018-01-24 | 三菱製紙株式会社 | 導電性材料前駆体および導電性材料の製造方法 |
JP6178659B2 (ja) * | 2013-08-08 | 2017-08-09 | 出光興産株式会社 | 無電解めっき下地膜形成用組成物 |
US11685999B2 (en) | 2014-06-02 | 2023-06-27 | Macdermid Acumen, Inc. | Aqueous electroless nickel plating bath and method of using the same |
WO2016039282A1 (ja) * | 2014-09-09 | 2016-03-17 | ナガセケムテックス株式会社 | 無電解めっき用プライマー組成物、無電解めっき用プライマー部材及びめっき物 |
JPWO2016039283A1 (ja) * | 2014-09-09 | 2017-06-15 | ナガセケムテックス株式会社 | 無電解めっき用プライマー組成物、無電解めっき用プライマー部材及びめっき物 |
WO2017154879A1 (ja) * | 2016-03-11 | 2017-09-14 | Dic株式会社 | 積層体の製造方法 |
JP2018090654A (ja) * | 2016-11-30 | 2018-06-14 | 東洋インキScホールディングス株式会社 | 光透過性樹脂組成物 |
WO2024054122A1 (en) * | 2022-09-07 | 2024-03-14 | Cirrus Materials Science Limited | Method for providing a conductive surface on a non-conductive polymeric surface |
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KR20080111013A (ko) | 2008-12-22 |
DE112007000695T5 (de) | 2009-01-29 |
KR101310588B1 (ko) | 2013-09-23 |
CN101405434B (zh) | 2011-09-28 |
JPWO2007108351A1 (ja) | 2009-08-06 |
CN101405434A (zh) | 2009-04-08 |
TW200741030A (en) | 2007-11-01 |
US8206828B2 (en) | 2012-06-26 |
US20090075089A1 (en) | 2009-03-19 |
TWI400355B (zh) | 2013-07-01 |
WO2007108351A1 (ja) | 2007-09-27 |
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