JP5057981B2 - 半導体装置及びその製造方法並びに表示装置 - Google Patents
半導体装置及びその製造方法並びに表示装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Description
このため、表示装置に利用される半導体装置に対しては、各素子の更なる微細化が強く求められ、限られた面積に多くの素子を形成するために、周辺ドライバ回路では、サブミクロンオーダーのデザインルール、すなわち集積回路(以下「IC」ともいう)レベルの微細なパターン精度が要求されている。また、周辺ドライバ回路を構成する半導体素子には、半導体層のキャリアの移動度を高くすることも要求されており、これを実現するためにも素子の微細化が必要となる。
このように、システム液晶の周辺ドライバ等に用いられる集積回路については、簡便な製造プロセスで、安価に製造することが求められるとともに、素子及び回路パターンの微細化等により、高性能化及び低消費電力化を実現することが求められていた。
以下に本発明を詳述する。
上記ゲート電極の作製方法としては、スパッタ法により金属膜を形成した後、フォトレジスト等をマスクにしてドライエッチングによりパターニングを行う方法等が好適に用いられる。
なお、本願明細書における「以上」及び「以下」は、当該数値を含むものである。
このような本発明の半導体装置の製造方法は、上述の本発明の半導体装置を製造する方法として好適である。
なお、本発明の半導体装置の製造方法としては、上記(1)の転写工程、上記(2)の保護膜形成工程及び上記(3)の薄膜化工程を必須工程として含むのである限り、その他の工程を含んでいても含んでいなくてもよく、特に限定されるものではない。また、上記(1)〜(3)の工程を行う順序としては、本発明の効果を奏するものであれば特に限定されないが、上記(1)、(2)及び(3)の工程をこの順に行う態様と、上記(2)、(1)及び(3)の工程をこの順に行う態様とが好ましく、不純物元素の活性化のための熱処理工程において画素部のゲート電極が酸化することを防止する観点から、上記(2)、(1)及び(3)の工程をこの順に行う態様がより好ましい。
また、上記(2)の保護膜形成工程においては、上記(3)の薄膜化工程中にゲート電極が露出することを防ぐ観点から、平均膜厚が400nm以上の保護膜を形成することが好ましい。これにより、上記(3)の薄膜化工程において、保護膜がエッチングされた場合に、ゲート電極が露出することを効果的に防止することができ、エッチング終了後、平均膜厚が150nm程度の保護膜を得ることができる。なお、上記(2)の保護膜形成工程において形成される保護膜の平均膜厚の上限としては特に限定されないが、500nm以下であることが好ましい。
保護膜の形成方法としては、特に限定されず、スパッタ法、常圧CVD(Chemical Vapor Deposition)法、低圧CVD法、プラズマCVD法、リモートプラズマCVD法等を用いることができる。
上記エッチングは、ウェットエッチング又はドライエッチングで行うことができるが、膜厚の制御が容易であることから、ドライエッチングで行うことが好ましい。
ドライエッチングに使用されるガスとしては、特に限定されず、四フッ化炭素ガス及び酸素ガスの混合ガス、六フッ化硫黄ガス及び塩化水素ガスの混合ガス等が挙げられる。また、ドライエッチングのエッチング方式としては、プラズマエッチング(PE;plasma etching)モード、反応性イオンエッチング(RIE;reactive ion etching)モード等を用いることができる。
また、ウェットエッチングを行う場合、使用される薬液としては特に限定されず、例えば、水酸化カリウム水溶液、フッ酸及び硝酸の混合溶液、EDP(ethylene diamine pyrocatechol)等が挙げられる。
加熱分離方法としては、特に限定されないが、半導体層に水素又はヘリウム(He)、ネオン(Ne)等の不活性ガス元素からなるイオンを所望の深さに注入し、その後熱処理を行うことによってイオン注入層に沿って半導体層を分離する、いわゆるスマートカット法(商標登録)が好ましい。
なお、本実施例の集積回路部のMOSトランジスタでは、1個のNMOSトランジスタについて説明するが、本実施例の半導体装置は、複数個のNMOSトランジスタ及びPMOSトランジスタが同一基板上に形成されたものである。PMOSトランジスタは、NMOSトランジスタ形成時のイオン注入の不純物導電型を変更することにより形成できる。また、PMOS及びNMOSトランジスタは、互いに電気的に接続されていなくてもよいが、互いに電気的に接続されていることが好ましく、例えば、PMOS及びNMOSトランジスタを含んで構成されるCMOSトランジスタ(相補型回路)を有する構成が好適である。ここで各MOSトランジスタは、LOCOS(Local Oxidation Of Silicon)やトレンチアイソレーション等により、適宜素子分離されている。
なお、PMOSトランジスタとは、p型半導体からなるチャネル層を含んで構成されるMOSトランジスタのことをいい、NMOSトランジスタとは、n型半導体からなるチャネル層を含んで構成されるMOSトランジスタのことをいう。
図1を用いて、本発明の半導体装置を用いた表示装置用アクティブマトリクス基板について説明する。図1は、本実施例の表示装置用アクティブマトリクス基板の構成を示す断面模式図である。図1に示すように、本実施例のアクティブマトリクス基板は、透明基板であるガラス基板22と、ガラス基板22上に配置された集積回路部50及び画素部51と、画素部51のTFT30と集積回路部50とを接続する配線部37とにより構成される。
TFT30は、活性領域を含む半導体薄膜33と、半導体薄膜33を覆うゲート絶縁膜34と、ゲート絶縁膜34の上に設けられたゲート電極(画素部ゲート)35と、ゲート電極35を覆う保護膜36とをこの順に有している。半導体薄膜33は、ソース領域33sと、ドレイン領域33dと、これらソース領域33s及びドレイン領域33dとの間に形成されたチャネル領域33cとにより構成されている。なお、保護膜36は、通常、画素部51の略全面に配置されている。
また画素部51のTFT30上には、層間絶縁膜40、平坦化膜42及び画素電極41がこの順に積層されている。更にTFT30には、ドレイン領域33d及びソース領域39sの上方で、ゲート絶縁膜34、保護膜36及び層間絶縁膜40を貫通するコンタクトホール39d、39sが形成されている。コンタクトホール39d、39s内及び層間絶縁膜40上には導電性材料が充填され、層間膜上電極配線43a、43bが形成されている。また、層間膜上電極配線43aの上方には平坦化膜42を貫通するコンタクトホール44aが形成されている。コンタクトホール44a内及び平坦化膜42上には透明電極である画素電極41が形成され、TFT30のドレイン領域33dと画素電極41とが接続されている。そして、画素部51の最上層には配向膜(図示せず)が配置されている。
まず、TFT30の作製工程について説明する。図2に示すように、ガラス基板22に第1のベースコート層31であるSiNO層及び第2のベースコート層32であるTEOS層をこの順に積層する。続いて、TEOS層32の表面にアモルファスシリコン、ポリシリコン等からなる半導体薄膜33をフォトリソグラフィによりパターン形成する。続いて、上記TEOS層32の上に上記半導体薄膜33を覆うように、SiO2膜等の絶縁膜からなるゲート絶縁膜34を積層する。その後、半導体薄膜33の一部に重なるように、ゲート電極35をフォトリソグラフィによりパターン形成する。このゲート電極35をマスクとして、半導体薄膜33のソース領域33s及びドレイン領域33dに不純物元素のイオン注入を行う。続いて、画素部51の全面を覆うようにゲート電極34上に平均膜厚400nm程度の保護膜36を形成する。そして、ソース領域33s及びドレイン領域33dに対して熱処理を行い、イオン注入した不純物元素の活性化を行う。こうして、ガラス基板22上にTFT30を形成する。
なお、本実施例においては、保護膜36を集積回路部50の転写前に形成したが、本発明において、保護膜は、画素部ゲートを保護することができればよく、集積回路部の転写後に画素部ゲート上に形成してもよい。しかしながら、集積回路部の転写後に保護膜を基板の全面に形成する場合、上述した不純物元素の活性化のための熱処理工程において、通常金属材料を含む画素部ゲートが酸化されるおそれがある。したがって、熱処理工程における画素部ゲートの酸化を防止する観点からは、保護膜は、本実施例のように、集積回路部の転写前に形成されるほうが好ましい。
エッチングは、ウェットエッチング又はドライエッチングで行うことができるが、ドライエッチングで行うことが好ましい。ドライエッチングに使用されるガスとしては、四フッ化炭素ガス及び酸素ガスの混合ガス等を用いることができる。なお、四フッ化炭素ガス及び酸素ガスの混合ガスを用いたときの単結晶シリコンとTEOSとのエッチングにおける選択比は、1.5である。
また、ドライエッチングのエッチング方式としては、PE(plasma etching)モード、RIE(reactive ion etching)モード等を用いることができる。
また、ウェットエッチングを行う場合には、薬液としては、例えば、水酸化カリウム水溶液、フッ酸及び硝酸の混合溶液、EDP(ethylene diamine pyrocatechol)等を用いればよい。
上述のように画素部51のゲート電極35上に保護膜36を設けることにより、ゲート電極35に損傷を与えることなく、集積回路部50の半導体層1を薄膜化することが可能となり、その結果として、集積回路部50の微細化、高性能化及び低消費電力化が可能であるアクティブマトリクス基板を得ることができた。
2:熱酸化膜
4:Pウェル領域
5:窒化ケイ素膜
6:LOCOS酸化膜
7:ゲート酸化膜
8:ゲート電極(集積回路部ゲート)
9:P型不純物元素
10s、10d:低濃度不純物領域
11:サイドウォール
12:チャネル領域
13s、13d:高濃度不純物領域
14:絶縁膜
15:層間絶縁膜
16:N型不純物元素
17:剥離層
18:層間絶縁膜
19s、19d:コンタクトホール
20s:ソース電極
20d:ドレイン電極
21:絶縁膜
22:ガラス基板
23:保護膜
24:水素又は不活性ガス元素
30:TFT
31:第1のベースコート層(SiNO層)
32:第2のベースコート層(TEOS層)
33:半導体薄膜
33s:ソース領域
33d:ドレイン領域
33c:チャネル領域
34:ゲート絶縁膜
35:ゲート電極(画素部ゲート)
36:保護膜
37:配線部
38、39s、39d、44a、44b、44c:コンタクトホール
40:層間絶縁膜
41:画素電極
42:平坦化膜
43a、43b、43c:層間膜上電極配線
50:集積回路部
51:画素部
52:MOSトランジスタ
Claims (10)
- 第1の半導体薄膜上に絶縁膜を介して形成された金属電極又は金属配線を有する第1の薄膜素子と、第2の半導体層を有する第2の薄膜素子とが、絶縁表面を有する基板上に配置された半導体装置の製造方法であって、
該製造方法は、第2の薄膜素子を転写する領域の絶縁基板を露出させる露出工程と、半導体ウエハの一部を絶縁基板に転写して第2の薄膜素子を形成する転写工程と、第1の薄膜素子に保護膜を形成する保護膜形成工程と、第2の薄膜素子の第2の半導体層を薄膜化する薄膜化工程と、第1の薄膜素子及び第2の薄膜素子上に、感光性樹脂を含む平坦化膜を形成する工程と、平坦化膜上に、第1の薄膜素子及び第2の薄膜素子を互いに接続する配線部を形成する工程とを含み、
該露出工程、該転写工程、該保護膜形成工程及び該薄膜化工程をこの順に行うか、又は、該保護膜形成工程、該露出工程、該転写工程及び該薄膜化工程をこの順に行う
ことを特徴とする半導体装置の製造方法。 - 前記絶縁表面を有する基板は、ガラス、プラスチック又は石英で構成されていることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記保護膜形成工程は、平均膜厚が400nm以上の保護膜を形成することを特徴とする請求項1記載の半導体装置の製造方法。
- 前記薄膜化工程は、エッチングを行うことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記半導体装置の製造方法は、薄膜化工程の後、画素部の保護膜上に層間絶縁膜を形成する工程を含むことを特徴とする請求項1記載の半導体装置の製造方法。
- 半導体薄膜上にゲート絶縁膜を介して形成されたゲート電極を有するスイッチング素子を備える画素部と、半導体層を有する集積回路部とが、基板上に配置された半導体装置の製造方法であって、
該製造方法は、集積回路部を転写する領域の基板を露出させる露出工程と、
半導体ウエハの一部を基板上に転写して集積回路部を形成する転写工程と、
画素部のゲート電極上に保護膜を形成する保護膜形成工程と、
集積回路部の半導体層を薄膜化する薄膜化工程と、
画素部及び集積回路部上に、感光性樹脂を含む平坦化膜を形成する工程と、
平坦化膜上に、画素部及び集積回路部を互いに接続する配線部を形成する工程とを含み、
該露出工程、該転写工程、該保護膜形成工程及び該薄膜化工程をこの順に行うか、又は、該保護膜形成工程、該露出工程、該転写工程及び該薄膜化工程をこの順に行う
ことを特徴とする半導体装置の製造方法。 - 前記基板は、ガラス基板であることを特徴とする請求項6記載の半導体装置の製造方法。
- 前記保護膜形成工程は、平均膜厚が400nm以上の保護膜を形成することを特徴とする請求項6記載の半導体装置の製造方法。
- 前記薄膜化工程は、エッチングを行うことを特徴とする請求項6記載の半導体装置の製造方法。
- 前記半導体装置の製造方法は、薄膜化工程の後、画素部の保護膜上に層間絶縁膜を形成する工程を含むことを特徴とする請求項6記載の半導体装置の製造方法。
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US8184225B2 (en) | 2012-05-22 |
CN101258580A (zh) | 2008-09-03 |
JPWO2007029389A1 (ja) | 2009-03-26 |
CN101258580B (zh) | 2010-05-19 |
US20090242893A1 (en) | 2009-10-01 |
WO2007029389A1 (ja) | 2007-03-15 |
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