JP5047594B2 - 温度補償型薄膜バルク音響共振器デバイス - Google Patents
温度補償型薄膜バルク音響共振器デバイス Download PDFInfo
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
- H03H9/584—Coupled Resonator Filters [CFR]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
Claims (4)
- FBARスタックを備える温度補償型薄膜バルク音響共振器(FBAR)デバイスであって、
前記FBARスタックが、
温度係数を有する第1の共振周波数によって特徴付けられる第1の下側FBARであって、該第1の下側FBARは、対向して配置された2つの平面電極からなる第1の電極と、該平面電極間にある第1の圧電素子とを有し、該第1の圧電素子は、前記第1の共振周波数の前記温度係数が少なくとも或る程度依存する温度係数を有する、第1の下側FBARと、
前記第1の下側FBAR上に積重される第1の上側FBARであって、該第1の上側FBARは、温度係数を有する第2の共振周波数によって特徴付けられ、該第1の上側FBARは、対向して配置された2つの平面電極からなる第2の電極と、該平面電極間にある第2の圧電素子とを有し、該第2の圧電素子は、前記第2の共振周波数の前記温度係数が少なくとも或る程度依存する温度係数を有する、第1の上側FBARと、
前記第1の下側FBARと前記第1の上側FBARとの間にあって、ドープされた二酸化珪素から形成される第1の音響デカップラ
とを備えることからなる、FBARデバイス。 - 請求項1に記載のFBARデバイスであって、
前記第1の下側FBAR、前記第1の上側FBAR及び前記第1の音響デカップラは、第1の減結合スタック型バルク音響共振器(DSBAR)を構成し、
前記FBARスタックは、第2の下側FBARと、該第2の下側FBAR上に積重される第2の上側FBARと、該第2の下側FBARと該第2の上側FBARとの間にある第2の音響デカップラとを含む第2のDSBARをさらに含み、該第2の音響デカップラは、ドープされた二酸化珪素から形成され、
前記第1の下側FBARと前記第2の下側FBARを相互接続する第1の電気回路と、前記第1の上側FBARと前記第2の上側FBARを相互接続する第2の電気回路をさらに備えるFBARデバイス。 - 前記FBARスタックを構成する前記FBARはラダーフィルタとして相互接続される、請求項1または2に記載のFBARデバイス。
- 前記第1の音響デカップラはブラッグ構造として構成される、請求項1乃至3のいずれかに記載のFBARデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/291,674 | 2005-11-30 | ||
US11/291,674 US7561009B2 (en) | 2005-11-30 | 2005-11-30 | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007159123A JP2007159123A (ja) | 2007-06-21 |
JP2007159123A5 JP2007159123A5 (ja) | 2010-12-24 |
JP5047594B2 true JP5047594B2 (ja) | 2012-10-10 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006319975A Active JP5047594B2 (ja) | 2005-11-30 | 2006-11-28 | 温度補償型薄膜バルク音響共振器デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US7561009B2 (ja) |
JP (1) | JP5047594B2 (ja) |
GB (1) | GB2432980B (ja) |
Families Citing this family (119)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100107389A1 (en) | 2002-01-11 | 2010-05-06 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method of fabricating an electrode for a bulk acoustic resonator |
US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
US7791434B2 (en) * | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
DE102004062312B3 (de) * | 2004-12-23 | 2006-06-01 | Infineon Technologies Ag | Piezoelektrischer Resonator mit verbesserter Temperaturkompensation und Verfahren zum Herstellen desselben |
KR100692593B1 (ko) * | 2005-01-24 | 2007-03-13 | 삼성전자주식회사 | Mems 구조체, 외팔보 형태의 mems 구조체 및밀봉된 유체채널의 제조 방법. |
US7304412B2 (en) * | 2005-01-31 | 2007-12-04 | Avago Technologes Wireless Ip (Singapore) Pte Ltd | Apparatus embodying doped substrate portion |
US7732241B2 (en) * | 2005-11-30 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Microstructure and manufacturing method thereof and microelectromechanical system |
US7872945B2 (en) * | 2006-04-11 | 2011-01-18 | Xact Downhole Telemetry, Inc. | Dynamic efficiency optimization of piezoelectric actuator |
US8689426B2 (en) | 2008-12-17 | 2014-04-08 | Sand 9, Inc. | Method of manufacturing a resonating structure |
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US20070120625A1 (en) | 2007-05-31 |
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