CN105702850A - 复合压电芯片和压电传感器 - Google Patents
复合压电芯片和压电传感器 Download PDFInfo
- Publication number
- CN105702850A CN105702850A CN201610070724.2A CN201610070724A CN105702850A CN 105702850 A CN105702850 A CN 105702850A CN 201610070724 A CN201610070724 A CN 201610070724A CN 105702850 A CN105702850 A CN 105702850A
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- China
- Prior art keywords
- layer
- ground floor
- composite piezoelectric
- piezoelectric chip
- piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 55
- 239000000463 material Substances 0.000 claims description 37
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 10
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 abstract description 24
- 238000012360 testing method Methods 0.000 description 4
- 241001274660 Modulus Species 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910000816 inconels 718 Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610070724.2A CN105702850A (zh) | 2016-02-01 | 2016-02-01 | 复合压电芯片和压电传感器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610070724.2A CN105702850A (zh) | 2016-02-01 | 2016-02-01 | 复合压电芯片和压电传感器 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105702850A true CN105702850A (zh) | 2016-06-22 |
Family
ID=56230110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610070724.2A Pending CN105702850A (zh) | 2016-02-01 | 2016-02-01 | 复合压电芯片和压电传感器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105702850A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3965444A (en) * | 1975-01-03 | 1976-06-22 | Raytheon Company | Temperature compensated surface acoustic wave devices |
US5894651A (en) * | 1990-10-29 | 1999-04-20 | Trw Inc. | Method for encapsulating a ceramic device for embedding in composite structures |
JP2007159123A (ja) * | 2005-11-30 | 2007-06-21 | Agilent Technol Inc | 温度補償型薄膜バルク音響共振器デバイス |
CN102904546A (zh) * | 2012-08-30 | 2013-01-30 | 中兴通讯股份有限公司 | 一种温度补偿能力可调节的压电声波谐振器 |
-
2016
- 2016-02-01 CN CN201610070724.2A patent/CN105702850A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3965444A (en) * | 1975-01-03 | 1976-06-22 | Raytheon Company | Temperature compensated surface acoustic wave devices |
US5894651A (en) * | 1990-10-29 | 1999-04-20 | Trw Inc. | Method for encapsulating a ceramic device for embedding in composite structures |
JP2007159123A (ja) * | 2005-11-30 | 2007-06-21 | Agilent Technol Inc | 温度補償型薄膜バルク音響共振器デバイス |
CN102904546A (zh) * | 2012-08-30 | 2013-01-30 | 中兴通讯股份有限公司 | 一种温度补偿能力可调节的压电声波谐振器 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170605 Address after: Siming District of Xiamen city in Fujian Province Taiwan Road 361008 No. 155 unit 604A Applicant after: Westerners MA (Xiamen) Technology Co. Ltd. Address before: Siming District of Xiamen city in Fujian Province Taiwan Road 361008 No. 155 unit 604A Applicant before: Nie Yongzhong Applicant before: Huang Yuanqing |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170712 Address after: Shuangyang District of Quanzhou City, New South Street Community in Luojiang of Fujian province in 362011 Applicant after: Westerners MA (Quanzhou) joint control technology Co. Ltd. Address before: Siming District of Xiamen city in Fujian Province Taiwan Road 361008 No. 155 unit 604A Applicant before: Westerners MA (Xiamen) Technology Co. Ltd. |
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TA01 | Transfer of patent application right | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160622 |
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RJ01 | Rejection of invention patent application after publication |