JP6959768B2 - 圧電変換器 - Google Patents
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- JP6959768B2 JP6959768B2 JP2017122925A JP2017122925A JP6959768B2 JP 6959768 B2 JP6959768 B2 JP 6959768B2 JP 2017122925 A JP2017122925 A JP 2017122925A JP 2017122925 A JP2017122925 A JP 2017122925A JP 6959768 B2 JP6959768 B2 JP 6959768B2
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- 239000000919 ceramic Substances 0.000 claims description 209
- 230000035945 sensitivity Effects 0.000 claims description 75
- 230000036316 preload Effects 0.000 claims description 41
- 230000005484 gravity Effects 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 9
- 238000010008 shearing Methods 0.000 claims description 7
- 230000001447 compensatory effect Effects 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims 1
- 230000001133 acceleration Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 230000010287 polarization Effects 0.000 description 10
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000011664 signaling Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910000851 Alloy steel Inorganic materials 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910000967 As alloy Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910016063 BaPb Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- ZONODCCBXBRQEZ-UHFFFAOYSA-N platinum tungsten Chemical compound [W].[Pt] ZONODCCBXBRQEZ-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/304—Beam type
- H10N30/306—Cantilevers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/26—Auxiliary measures taken, or devices used, in connection with the measurement of force, e.g. for preventing influence of transverse components of force, for preventing overload
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
- G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
- G01L9/0022—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
- G01P15/0915—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up of the shear mode type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/581—Multiple crystal filters comprising ceramic piezoelectric layers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
- H04R17/10—Resonant transducers, i.e. adapted to produce maximum output at a predetermined frequency
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Acoustics & Sound (AREA)
- Ceramic Engineering (AREA)
- Signal Processing (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
- Measuring Fluid Pressure (AREA)
- Gyroscopes (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Description
Qmain=d15main×Mmain×a
Qcomp=d15comp×Mcomp×a
Qcollected=Qmain−Qcomp
SSmain=(Smain(T)−Smain(20℃))/Smain(20℃)
SScomp=(Scomp(T)−Scomp(20℃))/Scomp(20℃)
SScollected=(Scollected(T)−Scollected(20℃))/SScollected(20℃)
〔実施例1,2〕
〔実施例3,4〕
〔実施例5,6〕
〔実施例7,8〕
Claims (17)
- 力を測定する圧電変換器であって、
ベース要素と、
予荷重要素と、
加速されたときに前記力を発生可能な少なくとも1つの有効主振動質量手段であって、前記予荷重要素によって前記ベース要素に対して直接的又は間接的に接合された有効主振動質量手段と、
前記力を受けたときに主電荷を生成可能な第1の圧電セラミックを含む主圧電セラミック素子であって、前記予荷重要素によって前記有効主振動質量手段に対して直接的又は間接的に接合された主圧電セラミック素子と、
加速されたときに補償力を発生可能な少なくとも1つの補償振動質量手段であって、前記予荷重要素によって前記ベース要素に対して直接的又は間接的に接合された補償振動質量手段と、
前記補償力を受けたときに補償電荷を生成可能な第2の圧電セラミックを含む補償圧電セラミック素子であって、前記予荷重要素によって前記補償振動質量手段に対して直接的又は間接的に接合された補償圧電セラミック素子と
を備え、
前記第1の圧電セラミックは、前記第2の圧電セラミックより小さい温度感度シフトを有し、
前記第1の圧電セラミックは、前記第2の圧電セラミックによって生成された補償電荷よりも多くの量の主電荷を生成し、
前記主電荷及び前記補償電荷が反対の極性になるように、前記主圧電セラミック素子が、測定対象の前記力に応じて配置され、且つ、前記補償圧電セラミック素子が、前記補償力に応じて配置されている、圧電変換器。 - 前記第1の圧電セラミックが、前記第2の圧電セラミックの1/5以下の温度感度シフトを有する、請求項1に記載の圧電変換器。
- 前記第1の圧電セラミックが、動作温度範囲で、+20℃におけるせん断圧電電荷係数d15の値に対して20%上昇する前記せん断圧電電荷係数d15の温度感度シフトを有するソフトPZTで作られ、及び/又は
前記第2の圧電セラミックが、動作温度範囲で、+20℃におけるせん断圧電電荷係数d15の値に対して300%上昇する前記せん断圧電電荷係数d15の温度感度シフトを有するハードPZTで作られている、請求項2に記載の圧電変換器。 - 前記第1の圧電セラミックが、前記第2の圧電セラミックより大きい圧電電荷係数を有する、請求項1に記載の圧電変換器。
- 前記第1の圧電セラミックが、前記第2の圧電セラミックの2倍以上の圧電電荷係数を有する、請求項4に記載の圧電変換器。
- 前記第1の圧電セラミックが、+20℃において400pC/Nより大きいせん断圧電電荷係数d15を有するソフトPZTで作られ、及び/又は
前記第2の圧電セラミックが、+20℃において100pC/Nより大きいせん断圧電電荷係数d15を有するハードPZTで作られた、請求項5に記載の圧電変換器。 - 圧電変換器が、せん断力が作用する、前記主圧電セラミック素子及び前記補償圧電セラミック素子の同一の面に、電荷が生成されるせん断圧電効果を利用し、
前記主圧電セラミック素子及び前記補償圧電セラミック素子が、反対の極性を生じさせる前記せん断力に応じて配置されている、請求項1に記載の圧電変換器。 - 前記測定対象の力が、前記主圧電セラミック素子に対してせん断力として作用し、前記補償力が、前記補償圧電セラミック素子に対してせん断力として作用する、請求項7に記載の圧電変換器。
- 前記主圧電セラミック素子の第1の面からの負の主電荷、及び前記補償圧電セラミック素子の第2の面からの負の補償電荷を収集する少なくとも1つの信号手段を備える請求項8に記載の圧電変換器。
- 前記主圧電セラミック素子の第2の面からの正の主電荷、及び前記補償圧電セラミック素子の第1の面からの正の補償電荷を収集する少なくとも1つの接地手段を備える請求項8に記載の圧電変換器。
- 前記有効主振動質量手段が、前記ベース要素とは反対の、前記主圧電セラミック素子側に配置されている、振動質量要素、前記補償圧電セラミック素子、補償振動質量要素、電気絶縁要素、及び前記予荷重要素の一部のうちの少なくとも1つにより構成されている、請求項1に記載の圧電変換器。
- 前記補償振動質量手段が、前記ベース要素とは反対の、前記補償圧電セラミック素子側に配置されている、補償振動質量要素、電気絶縁要素、及び前記予荷重要素の一部のうちの少なくとも1つにより構成されている、請求項1に記載の圧電変換器。
- 前記圧電変換器が、被予荷重部品が前記ベース要素の1つの面に対して接合されているカンチレバー構造を有し、
前記カンチレバー構造が、前記被予荷重部品の総重量が重力により前記ベース要素の前記1つの面の側にかかる不均衡型である、請求項1に記載の圧電変換器。 - 前記圧電変換器が、被予荷重部品が前記ベース要素の2つの面に対して接合されているダブルカンチレバー構造を有し、
前記ダブルカンチレバー構造が、前記被予荷重部品の重量が重力により前記ベース要素の前記2つの面に均等に分散されてかかる均衡型である、請求項1に記載の圧電変換器。 - 前記圧電変換器が、被予荷重部品が前記ベース要素の2つの面に対して接合されているダブルカンチレバー構造を有し、
前記ダブルカンチレバー構造が、前記被予荷重部品の重量が重力により前記ベース要素の前記2つの面に不均等に分散されてかかる不均衡型である、請求項1に記載の圧電変換器。 - 前記圧電変換器が、被予荷重部品が前記ベース要素の3つの面に対して接合されている三角形状構造を有し、
前記三角形状構造が、前記被予荷重部品の重量が重力により前記ベース要素の前記3つの面に均等に分散されてかかる均衡型である、請求項1に記載の圧電変換器。 - 3つ以下の主圧電セラミック素子及び/又は3つ以下の補償圧電セラミック素子を備える請求項1に記載の圧電変換器。
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CN110174205B (zh) * | 2019-04-02 | 2021-01-12 | 济南大学 | 一种机器人关节用压电六维力传感器的测量方法 |
DE102019206997B4 (de) * | 2019-05-14 | 2021-11-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | System zur zerstörungsfreien Prüfung von Bauteilen |
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CN112729526A (zh) * | 2020-12-21 | 2021-04-30 | 苏州长风航空电子有限公司 | 一种高温压电式振动传感器及提高其稳定性的方法 |
CN116859082B (zh) * | 2023-09-05 | 2023-12-15 | 山东利恩斯智能科技有限公司 | 一种双轴加速度传感器及其安装、测量方法 |
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DE2605809C2 (de) | 1976-02-12 | 1986-11-13 | Minnesota Mining And Manufacturing Co., Saint Paul, Minn. | Sensoreinrichtung zur Erfassung einer Temperaturänderung oder einer Biegespannungsänderung |
US5115161A (en) * | 1989-12-04 | 1992-05-19 | Nec Corporation | Ultrasonic motor |
AT401201B (de) | 1994-03-03 | 1996-07-25 | Avl Verbrennungskraft Messtech | Piezoelektrisches messelement |
US7548012B2 (en) * | 2003-09-17 | 2009-06-16 | Kistler Holding, Ag | Multi-layer piezoelectric measuring element, and pressure sensor or force sensor comprising such a measuring element |
AT500829B1 (de) | 2004-10-07 | 2007-03-15 | Piezocryst Ges Fuer Piezoelek | Sensorelement mit zumindest einem messelement, welches piezoelektrische und pyroelektrische eigenschaften aufweist |
EP2248351A1 (en) * | 2008-02-22 | 2010-11-10 | Piezoinnovations | Ultrasonic torsional mode and longitudinal-torsional mode transducer systems |
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CN103706260B (zh) * | 2012-09-28 | 2016-03-02 | 纳米新能源(唐山)有限责任公司 | 利用压电聚合物的反渗透膜及其制备方法 |
CN203101420U (zh) * | 2013-03-18 | 2013-07-31 | 厦门乃尔电子有限公司 | 一种超高温压电式加速度传感器 |
AU2015100011B4 (en) | 2014-01-13 | 2015-07-16 | Apple Inc. | Temperature compensating transparent force sensor |
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US20170370962A1 (en) | 2017-12-28 |
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