JP5046506B2 - 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 - Google Patents

基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 Download PDF

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Publication number
JP5046506B2
JP5046506B2 JP2005303940A JP2005303940A JP5046506B2 JP 5046506 B2 JP5046506 B2 JP 5046506B2 JP 2005303940 A JP2005303940 A JP 2005303940A JP 2005303940 A JP2005303940 A JP 2005303940A JP 5046506 B2 JP5046506 B2 JP 5046506B2
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Japan
Prior art keywords
film
substrate
gas
silicon
silicide
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Expired - Fee Related
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JP2005303940A
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English (en)
Japanese (ja)
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JP2007115797A5 (enExample
JP2007115797A (ja
Inventor
國弘 多田
健索 成嶋
哲 若林
晋 山内
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2005303940A priority Critical patent/JP5046506B2/ja
Priority to PCT/JP2006/318333 priority patent/WO2007046204A1/ja
Priority to TW095138422A priority patent/TWI443719B/zh
Publication of JP2007115797A publication Critical patent/JP2007115797A/ja
Publication of JP2007115797A5 publication Critical patent/JP2007115797A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H10D64/01125—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides the silicides being formed by chemical reaction with the semiconductor after the contact hole formation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005303940A 2005-10-19 2005-10-19 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 Expired - Fee Related JP5046506B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005303940A JP5046506B2 (ja) 2005-10-19 2005-10-19 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
PCT/JP2006/318333 WO2007046204A1 (ja) 2005-10-19 2006-09-15 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
TW095138422A TWI443719B (zh) 2005-10-19 2006-10-18 A substrate processing method, a program and a recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005303940A JP5046506B2 (ja) 2005-10-19 2005-10-19 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体

Publications (3)

Publication Number Publication Date
JP2007115797A JP2007115797A (ja) 2007-05-10
JP2007115797A5 JP2007115797A5 (enExample) 2008-11-20
JP5046506B2 true JP5046506B2 (ja) 2012-10-10

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Family Applications (1)

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JP2005303940A Expired - Fee Related JP5046506B2 (ja) 2005-10-19 2005-10-19 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体

Country Status (3)

Country Link
JP (1) JP5046506B2 (enExample)
TW (1) TWI443719B (enExample)
WO (1) WO2007046204A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4703364B2 (ja) 2005-10-24 2011-06-15 株式会社東芝 半導体装置及びその製造方法
JP5194008B2 (ja) * 2007-06-22 2013-05-08 株式会社アルバック 半導体ウェーハの保護方法及び半導体装置の製造方法
JP2009010043A (ja) * 2007-06-26 2009-01-15 Tokyo Electron Ltd 基板処理方法，基板処理装置，記録媒体
JP5171192B2 (ja) * 2007-09-28 2013-03-27 東京エレクトロン株式会社 金属膜成膜方法
JP2009123793A (ja) * 2007-11-13 2009-06-04 Shimadzu Corp クラスタ型真空処理装置
KR101569956B1 (ko) * 2008-07-31 2015-11-17 도쿄엘렉트론가부시키가이샤 화학 처리 및 열처리용의 생산성이 높은 처리 시스템 및 동작 방법
JP2011066060A (ja) * 2009-09-15 2011-03-31 Tokyo Electron Ltd 金属シリサイド膜の形成方法
JP2011100962A (ja) * 2009-10-09 2011-05-19 Tokyo Electron Ltd 成膜方法及びプラズマ処理装置
KR20110093476A (ko) * 2010-02-12 2011-08-18 삼성엘이디 주식회사 기상 증착 시스템, 발광소자 제조방법 및 발광소자
JP5933375B2 (ja) * 2011-09-14 2016-06-08 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム
JP6121348B2 (ja) * 2014-02-28 2017-04-26 東京エレクトロン株式会社 めっきの前処理方法、記憶媒体およびめっき処理システム
US10217819B2 (en) * 2015-05-20 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor device including metal-2 dimensional material-semiconductor contact
JP5947435B1 (ja) * 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6600588B2 (ja) * 2016-03-17 2019-10-30 東京エレクトロン株式会社 基板搬送機構の洗浄方法及び基板処理システム
JP6439774B2 (ja) * 2016-11-21 2018-12-19 トヨタ自動車株式会社 半導体装置の製造方法
JP2020038929A (ja) * 2018-09-05 2020-03-12 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7362258B2 (ja) * 2019-02-08 2023-10-17 東京エレクトロン株式会社 基板処理方法及び成膜システム
JP7296806B2 (ja) 2019-07-16 2023-06-23 東京エレクトロン株式会社 ＲｕＳｉ膜の形成方法及び基板処理システム
KR102516340B1 (ko) * 2020-09-08 2023-03-31 주식회사 유진테크 기판 처리 장치 및 기판 처리 장치의 운용 방법
JP7608980B2 (ja) * 2021-06-22 2025-01-07 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2025062309A (ja) * 2023-10-02 2025-04-14 東京エレクトロン株式会社 成膜方法及び半導体製造装置

Family Cites Families (9)

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JPH04296021A (ja) * 1991-03-26 1992-10-20 Mitsubishi Electric Corp 半導体基板の表面処理方法
JP3086719B2 (ja) * 1991-06-27 2000-09-11 株式会社東芝 表面処理方法
JP3487080B2 (ja) * 1996-06-18 2004-01-13 ソニー株式会社 半導体装置およびその製造方法
JP3201318B2 (ja) * 1997-11-05 2001-08-20 日本電気株式会社 半導体装置の製造方法
JP2002016018A (ja) * 2000-06-30 2002-01-18 Sumitomo Heavy Ind Ltd 基板処理装置及び方法
JP4039385B2 (ja) * 2003-04-22 2008-01-30 東京エレクトロン株式会社 ケミカル酸化膜の除去方法
JP4833512B2 (ja) * 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
JP4651955B2 (ja) * 2004-03-03 2011-03-16 東京エレクトロン株式会社 成膜方法

Also Published As

Publication number Publication date
TWI443719B (zh) 2014-07-01
WO2007046204A1 (ja) 2007-04-26
TW200733206A (en) 2007-09-01
JP2007115797A (ja) 2007-05-10

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