JP5046506B2 - 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 - Google Patents
基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 Download PDFInfo
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- JP5046506B2 JP5046506B2 JP2005303940A JP2005303940A JP5046506B2 JP 5046506 B2 JP5046506 B2 JP 5046506B2 JP 2005303940 A JP2005303940 A JP 2005303940A JP 2005303940 A JP2005303940 A JP 2005303940A JP 5046506 B2 JP5046506 B2 JP 5046506B2
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- Prior art keywords
- film
- substrate
- gas
- silicon
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000012545 processing Methods 0.000 title claims description 497
- 239000000758 substrate Substances 0.000 title claims description 245
- 238000003672 processing method Methods 0.000 title claims description 25
- 239000007789 gas Substances 0.000 claims description 455
- 238000000034 method Methods 0.000 claims description 325
- 230000008569 process Effects 0.000 claims description 314
- 229910021332 silicide Inorganic materials 0.000 claims description 277
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 277
- 229910052710 silicon Inorganic materials 0.000 claims description 105
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 104
- 239000010703 silicon Substances 0.000 claims description 104
- 230000015572 biosynthetic process Effects 0.000 claims description 91
- 238000006243 chemical reaction Methods 0.000 claims description 83
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 45
- 238000010438 heat treatment Methods 0.000 claims description 38
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 238000005121 nitriding Methods 0.000 claims description 14
- 238000001179 sorption measurement Methods 0.000 claims description 9
- 238000005275 alloying Methods 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims 6
- 229910001069 Ti alloy Inorganic materials 0.000 claims 2
- 239000010408 film Substances 0.000 description 596
- 239000010936 titanium Substances 0.000 description 381
- 235000012431 wafers Nutrition 0.000 description 235
- 238000012546 transfer Methods 0.000 description 148
- 229910052751 metal Inorganic materials 0.000 description 145
- 239000002184 metal Substances 0.000 description 145
- 239000010410 layer Substances 0.000 description 58
- 239000000126 substance Substances 0.000 description 40
- 230000007246 mechanism Effects 0.000 description 36
- 229910008484 TiSi Inorganic materials 0.000 description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 27
- 238000000151 deposition Methods 0.000 description 24
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- 238000009792 diffusion process Methods 0.000 description 23
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 22
- 230000005284 excitation Effects 0.000 description 21
- 230000008021 deposition Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 12
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- 238000011068 loading method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000002826 coolant Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910021341 titanium silicide Inorganic materials 0.000 description 6
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- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
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- 238000009826 distribution Methods 0.000 description 4
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- 239000010409 thin film Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910004337 Ti-Ni Inorganic materials 0.000 description 3
- 229910011209 Ti—Ni Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
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- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
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- 229910019001 CoSi Inorganic materials 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- PWVDYRRUAODGNC-UHFFFAOYSA-N CCN([Ti])CC Chemical compound CCN([Ti])CC PWVDYRRUAODGNC-UHFFFAOYSA-N 0.000 description 1
- ZLOKVAIRQVQRGC-UHFFFAOYSA-N CN(C)[Ti] Chemical compound CN(C)[Ti] ZLOKVAIRQVQRGC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- ADTDNFFHPRZSOT-PVFUSPOPSA-N ram-330 Chemical compound C([C@H]1N(CC2)C)C3=CC=C(OC)C(OC)=C3[C@]32[C@@]1(O)CC[C@@H](OC(=O)OCC)C3 ADTDNFFHPRZSOT-PVFUSPOPSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005303940A JP5046506B2 (ja) | 2005-10-19 | 2005-10-19 | 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 |
| PCT/JP2006/318333 WO2007046204A1 (ja) | 2005-10-19 | 2006-09-15 | 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 |
| TW95138422A TWI443719B (zh) | 2005-10-19 | 2006-10-18 | A substrate processing method, a program and a recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005303940A JP5046506B2 (ja) | 2005-10-19 | 2005-10-19 | 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007115797A JP2007115797A (ja) | 2007-05-10 |
| JP2007115797A5 JP2007115797A5 (enrdf_load_stackoverflow) | 2008-11-20 |
| JP5046506B2 true JP5046506B2 (ja) | 2012-10-10 |
Family
ID=37962303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005303940A Expired - Fee Related JP5046506B2 (ja) | 2005-10-19 | 2005-10-19 | 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5046506B2 (enrdf_load_stackoverflow) |
| TW (1) | TWI443719B (enrdf_load_stackoverflow) |
| WO (1) | WO2007046204A1 (enrdf_load_stackoverflow) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4703364B2 (ja) | 2005-10-24 | 2011-06-15 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US20100184297A1 (en) * | 2007-06-22 | 2010-07-22 | Mikio Takagi | Method for protecting semiconductor wafer and process for producing semiconductor device |
| JP2009010043A (ja) * | 2007-06-26 | 2009-01-15 | Tokyo Electron Ltd | 基板処理方法，基板処理装置，記録媒体 |
| JP5171192B2 (ja) * | 2007-09-28 | 2013-03-27 | 東京エレクトロン株式会社 | 金属膜成膜方法 |
| JP2009123793A (ja) * | 2007-11-13 | 2009-06-04 | Shimadzu Corp | クラスタ型真空処理装置 |
| CN102105312B (zh) * | 2008-07-31 | 2014-06-11 | 东京毅力科创株式会社 | 用于化学处置和热处置的高产量处理系统及操作方法 |
| JP2011066060A (ja) * | 2009-09-15 | 2011-03-31 | Tokyo Electron Ltd | 金属シリサイド膜の形成方法 |
| JP2011100962A (ja) * | 2009-10-09 | 2011-05-19 | Tokyo Electron Ltd | 成膜方法及びプラズマ処理装置 |
| KR20110093476A (ko) * | 2010-02-12 | 2011-08-18 | 삼성엘이디 주식회사 | 기상 증착 시스템, 발광소자 제조방법 및 발광소자 |
| JP5933375B2 (ja) * | 2011-09-14 | 2016-06-08 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
| JP6121348B2 (ja) * | 2014-02-28 | 2017-04-26 | 東京エレクトロン株式会社 | めっきの前処理方法、記憶媒体およびめっき処理システム |
| US10217819B2 (en) | 2015-05-20 | 2019-02-26 | Samsung Electronics Co., Ltd. | Semiconductor device including metal-2 dimensional material-semiconductor contact |
| JP5947435B1 (ja) * | 2015-08-27 | 2016-07-06 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
| JP6600588B2 (ja) * | 2016-03-17 | 2019-10-30 | 東京エレクトロン株式会社 | 基板搬送機構の洗浄方法及び基板処理システム |
| JP6439774B2 (ja) * | 2016-11-21 | 2018-12-19 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| JP2020038929A (ja) * | 2018-09-05 | 2020-03-12 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7362258B2 (ja) | 2019-02-08 | 2023-10-17 | 東京エレクトロン株式会社 | 基板処理方法及び成膜システム |
| JP7296806B2 (ja) | 2019-07-16 | 2023-06-23 | 東京エレクトロン株式会社 | ＲｕＳｉ膜の形成方法及び基板処理システム |
| KR102516340B1 (ko) * | 2020-09-08 | 2023-03-31 | 주식회사 유진테크 | 기판 처리 장치 및 기판 처리 장치의 운용 방법 |
| JP7608980B2 (ja) * | 2021-06-22 | 2025-01-07 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP2025062309A (ja) * | 2023-10-02 | 2025-04-14 | 東京エレクトロン株式会社 | 成膜方法及び半導体製造装置 |
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| JPH04296021A (ja) * | 1991-03-26 | 1992-10-20 | Mitsubishi Electric Corp | 半導体基板の表面処理方法 |
| JP3086719B2 (ja) * | 1991-06-27 | 2000-09-11 | 株式会社東芝 | 表面処理方法 |
| JP3487080B2 (ja) * | 1996-06-18 | 2004-01-13 | ソニー株式会社 | 半導体装置およびその製造方法 |
| JP3201318B2 (ja) * | 1997-11-05 | 2001-08-20 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2002016018A (ja) * | 2000-06-30 | 2002-01-18 | Sumitomo Heavy Ind Ltd | 基板処理装置及び方法 |
| JP4039385B2 (ja) * | 2003-04-22 | 2008-01-30 | 東京エレクトロン株式会社 | ケミカル酸化膜の除去方法 |
| JP4833512B2 (ja) * | 2003-06-24 | 2011-12-07 | 東京エレクトロン株式会社 | 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 |
| US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
| JP4651955B2 (ja) * | 2004-03-03 | 2011-03-16 | 東京エレクトロン株式会社 | 成膜方法 |
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| TW200733206A (en) | 2007-09-01 |
| WO2007046204A1 (ja) | 2007-04-26 |
| JP2007115797A (ja) | 2007-05-10 |
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