JP5035516B2 - フォトマスク用チタニアドープ石英ガラスの製造方法 - Google Patents
フォトマスク用チタニアドープ石英ガラスの製造方法 Download PDFInfo
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- JP5035516B2 JP5035516B2 JP2006318172A JP2006318172A JP5035516B2 JP 5035516 B2 JP5035516 B2 JP 5035516B2 JP 2006318172 A JP2006318172 A JP 2006318172A JP 2006318172 A JP2006318172 A JP 2006318172A JP 5035516 B2 JP5035516 B2 JP 5035516B2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 146
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 90
- 239000010936 titanium Substances 0.000 claims description 28
- 229910052719 titanium Inorganic materials 0.000 claims description 28
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 10
- 238000002485 combustion reaction Methods 0.000 claims description 5
- 238000006460 hydrolysis reaction Methods 0.000 claims description 5
- 239000010419 fine particle Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 230000007062 hydrolysis Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 62
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 57
- 239000000758 substrate Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 25
- 238000005498 polishing Methods 0.000 description 21
- 238000002834 transmittance Methods 0.000 description 16
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 15
- 206010040925 Skin striae Diseases 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 12
- 239000003570 air Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 8
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000005049 silicon tetrachloride Substances 0.000 description 5
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000005055 methyl trichlorosilane Substances 0.000 description 2
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- -1 titanium halides Chemical class 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- XGZNHFPFJRZBBT-UHFFFAOYSA-N ethanol;titanium Chemical compound [Ti].CCO.CCO.CCO.CCO XGZNHFPFJRZBBT-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1407—Deposition reactors therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
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- C03B19/1415—Reactant delivery systems
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- C03B19/00—Other methods of shaping glass
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- C03B19/1446—Means for after-treatment or catching of worked reactant gases
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
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- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
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- C03—GLASS; MINERAL OR SLAG WOOL
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- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
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- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
- C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
- C03B2201/42—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn doped with titanium
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- C03—GLASS; MINERAL OR SLAG WOOL
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- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/08—Doped silica-based glasses containing boron or halide
- C03C2201/11—Doped silica-based glasses containing boron or halide containing chlorine
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/21—Doped silica-based glasses containing non-metals other than boron or halide containing molecular hydrogen
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
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- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/30—Doped silica-based glasses containing metals
- C03C2201/40—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
- C03C2201/42—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn containing titanium
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
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Description
(1) ケイ素源原料ガス及びチタン源原料ガスを可燃性ガス及び支燃性ガスにより火炎加水分解させて得た合成シリカ微粒子を回転するターゲット上に堆積すると同時に溶融ガラス化してチタニアドープ石英ガラスを製造する方法において、ターゲットの回転数が15rpm以上であって、ケイ素源原料ガス、チタン源原料ガス、可燃性ガス及び支燃性ガスの流量変動を±1%/hr以内に制御すると共に、当該チタニアドープ石英ガラス製造炉に流入又は排気されるガス、同製造炉周囲の外気の各々の温度変動を±2.5℃以内に制御することを特徴とするフォトマスク用チタニアドープ石英ガラスの製造方法。
(2) 上記チタニアドープ石英ガラスを1500〜1800℃で1〜10時間熱間成型し、更に700〜1300℃において大気中で1〜200時間保持してアニールした後、1〜20℃/hrの速度で500℃まで徐冷することを特徴とする(1)記載のチタニアドープ石英ガラスの製造方法。
(3) 得られたチタニアドープ石英ガラスが、3〜12質量%のチタニアを含有し、該チタニアの濃度勾配が0.01質量%/μm以下であり、かつ厚さ6.35mmでの波長440nmにおける見かけ透過率が30%以上であることを特徴とする(1)又は(2)記載のチタニアドープ石英ガラスの製造方法。
本発明のチタニアドープ石英ガラスは、そのチタニア濃度について、3〜12質量%のチタニアを含有し、そのチタニアの濃度勾配が0.01質量%/μm以下であり、かつその透過率について、厚さ6.35mmでの波長440nmにおける見かけ透過率が30%以上であるという特性を備えており、このようなチタニアドープ石英ガラスは紫外光、特に、波長70nm以下の極端紫外光(EUV)を光源とする光学系に用いる部材に好適である。
n=3.28×10-3×x+1.4586 (1)
従って、屈折率差(Δn)とチタニア濃度差(Δx)(質量%)との関係は下記式(2)によって示される。
Δn=3.28×10-3×Δx (2)
OH基濃度(ppm)=(4522cm-1における吸光係数)/T×4400
を用いることができる。但し、Tは測定サンプルの厚さ(cm)である。
バーナと、ガス供給ラインを備える製造炉において、水素ガス10m3/hr、酸素ガス6m3/hr、原料としての四塩化ケイ素1000g/hr、四塩化チタン100g/hrを石英製バーナに供給し、酸水素炎による四塩化ケイ素、四塩化チタンの加水分解反応により生成したSiO2及びTiO2を石英製バーナの先方に設置した50rpmで回転しながら10mm/hrで後退するターゲット材に付着させることでチタニアドープ石英ガラスのインゴットを製造した。このとき、各種ガスの流量変動は±0.2%/hrであった。また、チタニアドープ石英ガラス製造炉へ供給される空気、排気されるガス、製造炉の外気温の温度変動は±1℃であった。
また、屈折率の最も高い位置と最も低い位置の間の距離とチタニア濃度差(Δx)(質量%)からチタニア濃度勾配(質量%/μm)を求めた。
得られたチタニア濃度差(Δx)(質量%)及びチタニア濃度勾配を表1に示す。
また、レーザ干渉計の倍率を上げて、レーザ干渉計に接続されたCCDの精度を1ピクセル当たり8μm程度にし、作製した基板面中央部142.4mm×142.4mm角の領域内での1mm2毎のPV平坦度を測定し、測定値内で最も大きなPV平坦度を表1に示す。
バーナと、ガス供給ラインを備える製造炉において、水素ガス10m3/hr、酸素ガス6m3/hr、原料としての四塩化ケイ素1000g/hr、四塩化チタン100g/hrを石英製バーナに供給し、酸水素炎による四塩化ケイ素、四塩化チタンの加水分解反応により生成したSiO2及びTiO2を石英製バーナの先方に設置した3rpmで回転しながら10mm/hrで後退するターゲット材に付着させることでチタニアドープ石英ガラスのインゴットを製造した。このとき、各種ガスの流量変動は±2%/hrであった。また、チタニアドープ石英ガラス製造炉へ供給される空気、排気されるガス、製造炉の外気温の温度変動は±3℃であった。
Claims (3)
- ケイ素源原料ガス及びチタン源原料ガスを可燃性ガス及び支燃性ガスにより火炎加水分解させて得た合成シリカ微粒子を回転するターゲット上に堆積すると同時に溶融ガラス化してチタニアドープ石英ガラスを製造する方法において、ターゲットの回転数が15rpm以上であって、ケイ素源原料ガス、チタン源原料ガス、可燃性ガス及び支燃性ガスの流量変動を±1%/hr以内に制御すると共に、当該チタニアドープ石英ガラス製造炉に流入又は排気されるガス、同製造炉周囲の外気の各々の温度変動を±2.5℃以内に制御することを特徴とするフォトマスク用チタニアドープ石英ガラスの製造方法。
- 上記チタニアドープ石英ガラスを1500〜1800℃で1〜10時間熱間成型し、更に700〜1300℃において大気中で1〜200時間保持してアニールした後、1〜20℃/hrの速度で500℃まで徐冷することを特徴とする請求項1記載のチタニアドープ石英ガラスの製造方法。
- 得られたチタニアドープ石英ガラスが、3〜12質量%のチタニアを含有し、該チタニアの濃度勾配が0.01質量%/μm以下であり、かつ厚さ6.35mmでの波長440nmにおける見かけ透過率が30%以上であることを特徴とする請求項1又は2記載のチタニアドープ石英ガラスの製造方法。
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JP2006318172A JP5035516B2 (ja) | 2005-12-08 | 2006-11-27 | フォトマスク用チタニアドープ石英ガラスの製造方法 |
US11/634,270 US7585598B2 (en) | 2005-12-08 | 2006-12-06 | Titania-doped quartz glass and making method, EUV lithographic member and photomask substrate |
EP06256239.2A EP1795506B2 (en) | 2005-12-08 | 2006-12-07 | Titania-doped quartz glass and making method, euv lithographic member and photomask substrate |
TW095145693A TWI389866B (zh) | 2005-12-08 | 2006-12-07 | A quartz glass doped with titanium dioxide, a member for EUV micrographs, a mask for a EUV micrograph mask, and a quartz glass doped with titanium dioxide |
DE602006020229T DE602006020229D1 (de) | 2005-12-08 | 2006-12-07 | Mit Titandioxid dotiertes Quarzglas, Herstellungsverfahren, Bestandteil für EUV-Lithographie und Maskensubstrat |
KR1020060123770A KR101076491B1 (ko) | 2005-12-08 | 2006-12-07 | 티타니아 도핑 석영 유리, euv 리소그래피용 부재,euv 리소그래피용 포토마스크 기판 및 티타니아 도핑석영 유리의 제조 방법 |
US12/512,436 US7849711B2 (en) | 2005-12-08 | 2009-07-30 | Titania-doped quartz glass and making method, EUV lithographic member and photomask substrate |
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