JP5030474B2 - 半導体リソグラフィー用樹脂組成物 - Google Patents

半導体リソグラフィー用樹脂組成物 Download PDF

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Publication number
JP5030474B2
JP5030474B2 JP2006138768A JP2006138768A JP5030474B2 JP 5030474 B2 JP5030474 B2 JP 5030474B2 JP 2006138768 A JP2006138768 A JP 2006138768A JP 2006138768 A JP2006138768 A JP 2006138768A JP 5030474 B2 JP5030474 B2 JP 5030474B2
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Japan
Prior art keywords
group
formula
carbon atoms
hydrocarbon group
atom
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Expired - Fee Related
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JP2006138768A
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English (en)
Japanese (ja)
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JP2007308586A5 (enExample
JP2007308586A (ja
Inventor
稔 飯島
孝則 山岸
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Maruzen Petrochemical Co Ltd
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Maruzen Petrochemical Co Ltd
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Publication date
Application filed by Maruzen Petrochemical Co Ltd filed Critical Maruzen Petrochemical Co Ltd
Priority to JP2006138768A priority Critical patent/JP5030474B2/ja
Priority to TW096115566A priority patent/TWI413862B/zh
Priority to US11/800,295 priority patent/US8067516B2/en
Priority to KR1020070048838A priority patent/KR101419934B1/ko
Publication of JP2007308586A publication Critical patent/JP2007308586A/ja
Publication of JP2007308586A5 publication Critical patent/JP2007308586A5/ja
Priority to US13/199,907 priority patent/US8709698B2/en
Application granted granted Critical
Publication of JP5030474B2 publication Critical patent/JP5030474B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polymerization Catalysts (AREA)
JP2006138768A 2006-05-18 2006-05-18 半導体リソグラフィー用樹脂組成物 Expired - Fee Related JP5030474B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006138768A JP5030474B2 (ja) 2006-05-18 2006-05-18 半導体リソグラフィー用樹脂組成物
TW096115566A TWI413862B (zh) 2006-05-18 2007-05-02 正型微影用的共聚合物之製造方法及使用之聚合起始劑
US11/800,295 US8067516B2 (en) 2006-05-18 2007-05-04 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography
KR1020070048838A KR101419934B1 (ko) 2006-05-18 2007-05-18 포지티브 형 리소그래피용 공중합체, 상기 공중합체의제조에 사용되는 중합 개시제, 및 반도체 리소그래피용조성물
US13/199,907 US8709698B2 (en) 2006-05-18 2011-09-12 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006138768A JP5030474B2 (ja) 2006-05-18 2006-05-18 半導体リソグラフィー用樹脂組成物

Publications (3)

Publication Number Publication Date
JP2007308586A JP2007308586A (ja) 2007-11-29
JP2007308586A5 JP2007308586A5 (enExample) 2009-06-04
JP5030474B2 true JP5030474B2 (ja) 2012-09-19

Family

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Family Applications (1)

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JP2006138768A Expired - Fee Related JP5030474B2 (ja) 2006-05-18 2006-05-18 半導体リソグラフィー用樹脂組成物

Country Status (4)

Country Link
US (2) US8067516B2 (enExample)
JP (1) JP5030474B2 (enExample)
KR (1) KR101419934B1 (enExample)
TW (1) TWI413862B (enExample)

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* Cited by examiner, † Cited by third party
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KR101109808B1 (ko) * 2005-05-13 2012-02-15 제이에스알 가부시끼가이샤 감방사선성 수지 조성물의 제조 방법
JP5183133B2 (ja) * 2006-09-19 2013-04-17 富士フイルム株式会社 ポジ型感光性組成物、該ポジ型感光性組成物に使用される高分子化合物、該高分子化合物の製造方法、該高分子化合物の製造に使用される化合物及びそのポジ型感光性組成物を用いたパターン形成方法
US7604920B2 (en) * 2007-08-07 2009-10-20 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition, method of forming resist pattern, polymeric compound, and compound
JP5466511B2 (ja) * 2008-02-22 2014-04-09 株式会社クラレ 高分子化合物
JP5270187B2 (ja) 2008-02-22 2013-08-21 株式会社クラレ 新規な（メタ）アクリル酸エステル誘導体、ハロエステル誘導体および高分子化合物
JP5270188B2 (ja) * 2008-02-22 2013-08-21 株式会社クラレ 新規なアクリル酸エステル誘導体、高分子化合物
JP5591465B2 (ja) * 2008-10-30 2014-09-17 丸善石油化学株式会社 濃度が均一な半導体リソグラフィー用共重合体溶液の製造方法
JP5541766B2 (ja) * 2009-05-19 2014-07-09 株式会社ダイセル フォトレジスト用高分子化合物の製造方法
KR101111491B1 (ko) * 2009-08-04 2012-03-14 금호석유화학 주식회사 신규 공중합체 및 이를 포함하는 포토레지스트 조성물
JP5978055B2 (ja) * 2011-08-19 2016-08-24 東京応化工業株式会社 化合物、ラジカル重合開始剤、化合物の製造方法、重合体、レジスト組成物及びレジストパターン形成方法
KR20150002720A (ko) 2012-06-26 2015-01-07 미쯔비시 레이온 가부시끼가이샤 고분자 화합물의 제조 방법 및 고분자 화합물
JP5914241B2 (ja) * 2012-08-07 2016-05-11 株式会社ダイセル 高分子化合物の製造方法、高分子化合物、及びフォトレジスト用樹脂組成物
JP6118576B2 (ja) * 2013-02-13 2017-04-19 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物、ラジカル重合開始剤、化合物の製造方法、重合体
US11065019B1 (en) 2015-02-04 2021-07-20 Route 92 Medical, Inc. Aspiration catheter systems and methods of use
CN110325500A (zh) * 2017-02-28 2019-10-11 三菱瓦斯化学株式会社 化合物或树脂的纯化方法、及组合物的制造方法

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DE3004532C2 (de) * 1980-02-07 1983-03-17 Sergej Stepanovič Ivančev Peroxyderivate von α, ω - bis (Carboxy- bzw. Hydroxymethylen)-3,3'-azo-bis (3-cyan)-butyl und Verfahren zu ihrer Herstellung
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
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JP2005171093A (ja) * 2003-12-11 2005-06-30 Maruzen Petrochem Co Ltd 半導体リソグラフィー用共重合体の製造方法及び該方法により得られる半導体リソグラフィー用共重合体

Also Published As

Publication number Publication date
US8709698B2 (en) 2014-04-29
KR101419934B1 (ko) 2014-08-13
JP2007308586A (ja) 2007-11-29
TW200743908A (en) 2007-12-01
US20120071638A1 (en) 2012-03-22
KR20070112068A (ko) 2007-11-22
US8067516B2 (en) 2011-11-29
US20070269741A1 (en) 2007-11-22
TWI413862B (zh) 2013-11-01

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