JP5028226B2 - 金属層上に成長した化合物半導体基板、その製造方法、及びそれを用いた化合物半導体素子 - Google Patents
金属層上に成長した化合物半導体基板、その製造方法、及びそれを用いた化合物半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 148
- 150000001875 compounds Chemical class 0.000 title claims description 143
- 239000000758 substrate Substances 0.000 title claims description 117
- 229910052751 metal Inorganic materials 0.000 title claims description 63
- 239000002184 metal Substances 0.000 title claims description 63
- 238000000034 method Methods 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000463 material Substances 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 230000001788 irregular Effects 0.000 claims 1
- 230000002040 relaxant effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 161
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 34
- 229910002601 GaN Inorganic materials 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 239000010409 thin film Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 7
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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Description
[反応式1]
Ga(CH3)3+NH3→Ga(CH3)3・NH3
トリメチルガリウム(TMGa)とアンモニウム(NH3)が流入されてGa(CH3)3・NH3が生成される。
[反応式2]
Ga(CH3)3・NH3→GaN+nCH4+1/2(3−n)H2
[反応式3]
Ga(l)+HCl(g)→GaCl(g)+1/2H2(g)
[反応式4]
GaCl(g)+NH3→GaN+HCl(g)+H2
[反応式5]
HCl(g)+NH3→NH4Cl(g)
HVPE法は、100μm/hr程度の速い成長率で厚膜の成長が可能であるため、高い生産性が得られる。
12 球形ボール
20 金属層
30 開口部
42 バッファ層
44、50、62 化合物半導体層
60 活性層
64、66 電極(電極パッド)
Claims (19)
- サファイア(Al2O3)、GaAs、スピネル、InP、SiC、またはSiからなる基板と、
前記基板の表面を露出させる複数の円形開口部が形成された前記基板上に積層された金属層と、
前記複数の円形開口部によって露出した基板表面から成長して、前記開口部を埋めて前記金属層を覆うIII‐V族またはII‐IV族化合物半導体層と、を含み、
前記複数の円形開口部が、不定形のパターンで形成されており、前記複数の円形開口部のそれぞれは、前記基板に垂直な方向の断面形状が前記基板から遠ざかるほど広くなる曲線形状で形成されていることを特徴とする化合物半導体基板。 - 前記金属層はPt、Ti、Cr、AlまたはCuからなることを特徴とする請求項1に記載の化合物半導体基板。
- 前記基板と前記化合物半導体層との結晶学的差を緩和させて前記化合物半導体層の結晶欠陥密度を最小化するために、前記基板と前記化合物半導体層間に形成されたバッファ層をさらに含むことを特徴とする請求項1に記載の化合物半導体基板。
- 前記バッファ層はGaN、AlN、AlGaN、またはこれらの組合せ膜からなることを特徴とする請求項3に記載の化合物半導体基板。
- 前記金属層の厚さが前記開口部の直径より小さいことを特徴とする請求項1に記載の化合物半導体基板。
- 前記開口部の直径が10nm〜2μmであることを特徴とする請求項1に記載の化合物半導体基板。
- 前記化合物半導体層はGaN、AlN、InN、またはこれらの組合せ(Ga1−xAl1−yIn1−zN、0≦x、y、z≦1)からなる膜であることを特徴とする請求項1に記載の化合物半導体基板。
- 前記化合物半導体層はSi、Ge、Mg、Zn、O、Se、Mn、Ti、Ni及びFeからなる群より選択された1種以上の異種物質をさらに含むことを特徴とする請求項7に記載の化合物半導体基板。
- 請求項1〜請求項8のうちのいずれか1項に記載された化合物半導体基板を用いて製造された化合物半導体素子であって、
前記化合物半導体層は、第1導電型の化合物半導体層、前記第1導電型の化合物半導体層上に形成された活性層、及び前記活性層上に形成された第2導電型の化合物半導体層を含み、
前記金属層を第1電極として使用し、
前記第2導電型の化合物半導体層上に形成された第2電極を含む化合物半導体素子。 - (a)複数の球形ボールを用意するステップと、
(b)サファイア(Al2O3)、GaAs、スピネル、InP、SiC、またはSiからなる基板上に前記複数の球形ボールをコーティングするステップと、
(c)前記球形ボールがコーティングされた基板上に前記球形ボールの直径より小さい厚さの金属層を蒸着するステップと、
(d)前記金属層が蒸着された基板から前記複数の球形ボールを除去するステップと、
(e)前記複数の球形ボールが除去されて露出した基板の表面からIII‐V族またはII‐IV族化合物半導体層を成長させるステップと、
(f)前記化合物半導体層を側面方向に成長させて前記金属層上で互いに繋げるステップと、
(g)前記化合物半導体層を目標とする厚さまで成長させるステップと、を含む化合物半導体基板の製造方法。 - 前記球形ボールの直径は10nm〜2μmであることを特徴とする請求項10に記載の化合物半導体基板の製造方法。
- 前記球形ボールは酸化シリコン(SiO2)ボール、サファイア(Al2O3)ボール、酸化チタン(TiO2)ボール、酸化ジルコニウム(ZrO2)ボール、Y2O3‐ZrO2ボール、酸化銅(CuO、Cu2O)ボール、酸化タンタル(Ta2O5)ボール、PZT(Pb(Zr,Ti)O3)ボール、Nb2O5ボール、FeSO4ボール、Fe3O4ボール、Fe2O3ボール、Na2SO4ボール、GeO2ボール、またはCdSボールからなることを特徴とする請求項10に記載の化合物半導体基板の製造方法。
- 前記金属層はPt、Ti、Cr、AlまたはCuからなることを特徴とする請求項10に記載の化合物半導体基板の製造方法。
- 前記金属層はスパッタリング(sputtering)またはエバポレーション(evaporation)方式で蒸着されることを特徴とする請求項10に記載の化合物半導体基板の製造方法。
- 前記(b)ステップの以前、または前記(d)ステップと(e)ステップ間に、前記基板と前記化合物半導体層との結晶学的差を緩和させて前記化合物半導体層の結晶欠陥密度を最小化するために、前記基板と前記化合物半導体層間にバッファ層を形成するステップをさらに含むことを特徴とする請求項10に記載の化合物半導体基板の製造方法。
- 前記バッファ層は10〜200nmの厚さで形成し、GaN、AlN、AlGaN、またはこれらの組合せ膜からなることを特徴とする請求項15に記載の化合物半導体基板の製造方法。
- 前記(c)ステップの以後に、前記金属層に対してアンモニアまたは窒素雰囲気で前記金属層をなす金属の融点以下の温度で熱処理するステップをさらに含むことを特徴とする請求項10に記載の化合物半導体基板の製造方法。
- 前記化合物半導体層はGaN、AlN、AlGaNまたはこれらの組合せ膜からなることを特徴とする請求項10に記載の化合物半導体基板の製造方法。
- 前記化合物半導体層はSi、Ge、Mg、Zn、O、Se、Mn、Ti、Ni及びFeからなる群より選択された1種以上の異種物質をさらに含むことを特徴とする請求項18に記載の化合物半導体基板の製造方法。
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