JP5012612B2 - 半導体デバイスの実装構造体及び実装構造体を用いた電子機器 - Google Patents
半導体デバイスの実装構造体及び実装構造体を用いた電子機器 Download PDFInfo
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Description
図1は、本発明に係る実装構造体の基本的な1実施例とその製造方法を示す概略断面図である。図1(a)は、高密度実装に適した外部端子にはんだバンプ5を採用した一般的なCSPパッケージ(半導体デバイス)50の断面図である。半導体チップ1が、配線基板3上に実装されており、半導体チップ1の電極と配線基板3の配線パターンとが、ワイヤボンディング法により、ボンディングワイヤ2で電気的に接続されている。さらにこれらを覆うようにモールド樹脂4で封止されている。配線基板3の半導体チップ1が実装された面とは反対側の面には、半導体デバイス50を実装する配線基板と接続するための外部端子として、はんだバンプ5が形成されている。
次に、本発明に係る実装構造体60を積層した1実施例について、図2を用いて説明する。図2は、本発明に係る、再構成された半導体デバイス(実装構造体60)を下段に3段配し、最上段に、再構成していない半導体デバイス50を積層してリフローはんだ付け接続した、パッケージ積層型の実装構造体の概略断面図である。
上記では、分割された支持体9を用いた実装構造体について説明してきたが、一体型の支持体を用いても構成することができる。その実施例を図3に示す。この場合には、半導体デバイス50と支持体9を組み合わせる際に、半導体デバイス50と支持体9の側面間に僅かなあそび(スペース)がないと、組み合わせることが難しい。そのため、最終的なパッケージの寸法は、このスペースの分だけ大きくなるというデメリットがあるものの、マルチベンダ化などによって適用する半導体デバイス50の外形が異なる場合においても、最も大きいデバイスに合わせて支持体9、可撓性配線基板7を設計しておくだけで、支持体9、可撓性配線基板7の双方とも共用できるというメリットがある。図3では、下から3段目の半導体デバイス50が他の半導体デバイス50よりも小型であるが、支持体9、可撓性配線基板7は共通のものを適用している。
次に、本発明に係る実装構造体の他の実施例について、図4を参照して詳細に説明する。図4の拡大図(円内)は、図3の構造の実装構造体の一部に導電性バンプ14によって、支持体9と可撓性配線基板7上に構成されたグランドパターン11とを、電気的に接続した例を示す概略断面図である。図4には、可撓性配線基板7に配された配線パターン12、可撓性配線基板7を覆う絶縁層13及びカバー樹脂15と、カバー樹脂15に配された配線パターン12も示している。
2 ボンディングワイヤ
3 配線基板
4 モールド樹脂
5、8 はんだバンプ
6 熱可塑性樹脂
7 可撓性配線基板
9 支持体
9a 突出部
10 接着材料
11 グランドパターン(可撓性配線基板)
12 配線パターン
13 絶縁層
14 導電性バンプ
15 カバー樹脂
50 半導体デバイス(半導体パッケージ、CSPパッケージ)
60 実装構造体
Claims (20)
- 下面に外部端子としてはんだバンプを有する1つまたは複数の半導体デバイスを、配線が形成された可撓性を有する配線基板で包み込むように構成され、かつ該半導体デバイスの該外部端子形成面側及び外部端子形成面側とは表裏反対面側の双方に外部電極を備えた実装構造体において、
該可撓性配線基板には少なくとも一層の配線層が形成されており、
該半導体デバイスの側面及び該外部端子形成面との表裏反対面を取り囲み、かつ該半導体デバイスの側面から該外部端子形成面側方向に突出するように構成された支持体を備え、
該支持体の、該半導体デバイスの側面からの突出長さは、該支持体がない場合に該半導体デバイスと該可撓性配線基板とをリフロー法により溶融接合した場合の、該はんだバンプの高さと同じか、わずかに大きい長さとする、
ことを特徴とする、実装構造体。 - 前記支持体の、前記半導体デバイスの前記外部端子形成面との表裏反対面を取り囲む部分の少なくとも一部が、前記可撓性配線基板と接着固定されていることを特徴とする、請求項1に記載の実装構造体。
- 前記支持体の、前記半導体デバイスの側面を取り囲む部分の少なくとも一部が、前記可撓性配線基板と接着固定されていることを特徴とする請求項1又は2に記載の実装構造体。
- 前記可撓性配線基板の内側の表面に前記支持体との接着固定用の接着層が配され、
該支持体の、前記半導体デバイスの側面からの突出長さは、該支持体がない場合に前記半導体デバイスと前記可撓性配線基板とをリフロー法により溶融接合した場合の、該半導体デバイスの前記はんだバンプ搭載面から該接着層までの距離と同じか、わずかに大きい長さとすることを特徴とする、請求項1〜3のいずれか一に記載の実装構造体。 - 前記支持体は、前記可撓性配線基板の熱膨張係数と同等か、あるいはそれ以下の熱膨張係数を有することを特徴とする請求項1〜4のいずれか一に記載の実装構造体。
- 前記支持体が、前記半導体デバイスと接触して固定されていることを特徴とする請求項1〜5のいずれか一に記載の実装構造体。
- 前記支持体は2つ以上に分割され、前記半導体デバイスの側面の少なくとも一部が該支持体と接触して固定されていることを特徴とする請求項1〜6のいずれか一に記載の実装構造体。
- 前記支持体は2つ以上に分割され、前記半導体デバイスの側面の少なくとも一部と該支持体とが接着層を介して接着固定されていることを特徴とする、請求項1〜7のいずれか一に記載の実装構造体。
- 前記支持体が、前記可撓性配線基板と前記半導体デバイスの双方とに接着剤で接着固定されていることを特徴とする、請求項1〜8のいずれか一に記載の実装構造体。
- 前記接着剤が導電性接着剤であることを特徴とする、請求項9に記載の実装構造体。
- 前記支持体は、前記半導体デバイスの外部端子形成面との表裏反対面と、熱伝導媒体を介して接着または接触しており、該支持体が該半導体デバイスの放熱板の役割も果たしていることを特徴とする請求項1〜10のいずれか一に記載の実装構造体。
- 前記熱伝導媒体が導電性接着剤又は放熱ゲルであることを特徴とする、請求項11に記載の実装構造体。
- 前記支持体は、弾性を有する材料で構成されていることを特徴とする、請求項1〜12のいずれか一に記載の実装構造体。
- 前記支持体は、導電性を有した材料で構成され、かつ前記可撓性配線基板上に構成されたグランドパターンと該支持体とが、導電性バンプによって電気的に接続されていることを特徴とする、請求項1〜13のいずれか一に記載の実装構造体。
- 前記可撓性配線基板を折り曲げる箇所に相当する、前記支持体の最外周角部は、角が落とされてC面取りまたは円弧状の形状になっていることを特徴とする、請求項1〜14のいずれか一に記載の実装構造体。
- 前記可撓性配線基板の内側の表面に少なくとも1層の接着層が形成され、前記半導体デバイスあるいは前記支持体と該可撓性配線基板の少なくとも一部が該接着層によって接着固定されていることを特徴とする、請求項1〜15のいずれか一に記載の実装構造体。
- 前記接着層が熱可塑性樹脂又は熱硬化前の熱硬化性樹脂からなることを特徴とする、請求項16に記載の実装構造体。
- 請求項1〜17のいずれか一に記載の実装構造体を含んで構成される、積層型半導体デバイス。
- 受動部品も実装されていることを特徴とする、請求項18に記載の積層型半導体デバイス。
- 請求項18及び19のいずれか又は両方に記載の前記積層型半導体デバイスを含んで構成される電子機器。
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JP2008080371A JP5012612B2 (ja) | 2008-03-26 | 2008-03-26 | 半導体デバイスの実装構造体及び実装構造体を用いた電子機器 |
US12/409,796 US8093706B2 (en) | 2008-03-26 | 2009-03-24 | Mounting structure of semiconductor device and electronic apparatus using same |
CN2009101298483A CN101546743B (zh) | 2008-03-26 | 2009-03-26 | 半导体器件的安装结构体及使用安装结构体的电子设备 |
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JP2008080371A JP5012612B2 (ja) | 2008-03-26 | 2008-03-26 | 半導体デバイスの実装構造体及び実装構造体を用いた電子機器 |
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JP5527806B2 (ja) * | 2010-02-17 | 2014-06-25 | Necネットワークプロダクツ株式会社 | 半導体装置の製造方法 |
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CN102036470B (zh) * | 2010-12-05 | 2012-11-21 | 新高电子材料(中山)有限公司 | 低热阻高散热金属基电路板 |
CN102856296A (zh) * | 2012-09-24 | 2013-01-02 | 日月光半导体制造股份有限公司 | 堆迭式半导体封装件 |
KR102481381B1 (ko) * | 2016-01-11 | 2022-12-27 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
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US20090243075A1 (en) | 2009-10-01 |
JP2009238854A (ja) | 2009-10-15 |
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