JP4999272B2 - 共注入後に中温で薄膜を分離する方法 - Google Patents

共注入後に中温で薄膜を分離する方法 Download PDF

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JP4999272B2
JP4999272B2 JP2004549162A JP2004549162A JP4999272B2 JP 4999272 B2 JP4999272 B2 JP 4999272B2 JP 2004549162 A JP2004549162 A JP 2004549162A JP 2004549162 A JP2004549162 A JP 2004549162A JP 4999272 B2 JP4999272 B2 JP 4999272B2
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species
source substrate
temperature
implantation
substrate
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Japanese (ja)
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JP2006505928A (ja
JP2006505928A5 (enExample
Inventor
カイルフルク，イアン
ベン・モアメド，ナデイア
ラガフ−ブランシヤー，クリステル
グエン，グエツト−プオン
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Physical Vapour Deposition (AREA)
JP2004549162A 2002-11-07 2003-10-30 共注入後に中温で薄膜を分離する方法 Expired - Lifetime JP4999272B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR02/13935 2002-11-07
FR0213935A FR2847076B1 (fr) 2002-11-07 2002-11-07 Procede de detachement d'une couche mince a temperature moderee apres co-implantation
PCT/EP2003/013148 WO2004042779A2 (en) 2002-11-07 2003-10-30 Method of detaching a thin film at moderate temperature after co-implantation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011242033A Division JP2012084897A (ja) 2002-11-07 2011-11-04 共注入後に中温で薄膜を分離する方法

Publications (3)

Publication Number Publication Date
JP2006505928A JP2006505928A (ja) 2006-02-16
JP2006505928A5 JP2006505928A5 (enExample) 2011-05-26
JP4999272B2 true JP4999272B2 (ja) 2012-08-15

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ID=32116442

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004549162A Expired - Lifetime JP4999272B2 (ja) 2002-11-07 2003-10-30 共注入後に中温で薄膜を分離する方法
JP2011242033A Withdrawn JP2012084897A (ja) 2002-11-07 2011-11-04 共注入後に中温で薄膜を分離する方法

Family Applications After (1)

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JP2011242033A Withdrawn JP2012084897A (ja) 2002-11-07 2011-11-04 共注入後に中温で薄膜を分離する方法

Country Status (8)

Country Link
EP (1) EP1559139B1 (enExample)
JP (2) JP4999272B2 (enExample)
KR (1) KR101122859B1 (enExample)
CN (1) CN1708843B (enExample)
AU (1) AU2003298137A1 (enExample)
FR (1) FR2847076B1 (enExample)
TW (1) TWI294663B (enExample)
WO (1) WO2004042779A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
EP1605504B1 (en) * 2004-06-10 2011-05-25 S.O.I. Tec Silicon on Insulator Technologies S.A. Method for manufacturing a SOI wafer
CN100527416C (zh) * 2004-08-18 2009-08-12 康宁股份有限公司 应变绝缘体上半导体结构以及应变绝缘体上半导体结构的制造方法
CN101027768B (zh) * 2004-09-21 2010-11-03 S.O.I.Tec绝缘体上硅技术公司 根据避免气泡形成和限制粗糙度的条件来进行共注入步骤的薄层转移方法
DE602004027422D1 (de) * 2004-09-21 2010-07-08 Soitec Silicon On Insulator Übertragungsverfahren mit einer behandlung einer zu verbindenden oberfläche
WO2006037783A1 (fr) * 2004-10-04 2006-04-13 S.O.I.Tec Silicon On Insulator Technologies Procédé de transfert d'une couche mince comprenant une perturbation controlée d'une structure cristalline
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2907966B1 (fr) 2006-10-27 2009-01-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat.
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
KR100873299B1 (ko) * 2007-08-20 2008-12-11 주식회사 실트론 Ｓｓｏｉ 기판의 제조방법
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
FR2949606B1 (fr) 2009-08-26 2011-10-28 Commissariat Energie Atomique Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation
FR2974944B1 (fr) * 2011-05-02 2013-06-14 Commissariat Energie Atomique Procédé de formation d'une fracture dans un matériau
KR101219358B1 (ko) * 2011-07-26 2013-01-21 삼성코닝정밀소재 주식회사 기판 분리 방법 및 이를 이용한 접합기판 제조방법
FR3045678B1 (fr) 2015-12-22 2017-12-22 Soitec Silicon On Insulator Procede de fabrication d'une couche piezoelectrique monocristalline et dispositif microelectronique, photonique ou optique comprenant une telle couche
FR3045677B1 (fr) 2015-12-22 2019-07-19 Soitec Procede de fabrication d'une couche monocristalline, notamment piezoelectrique
JP6563360B2 (ja) * 2016-04-05 2019-08-21 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
CN106222754A (zh) * 2016-07-29 2016-12-14 成都立威讯科技有限公司 一种工艺精湛的蓝宝石分离方法
DE102016118268B4 (de) * 2016-09-27 2025-06-26 Infineon Technologies Ag Verfahren zum Bearbeiten eines einkristallinen Substrats und mikromechanische Struktur
WO2020247531A1 (en) * 2019-06-06 2020-12-10 Applied Materials, Inc. Methods of post treating silicon nitride based dielectric films with high energy low dose plasma
FR3108440B1 (fr) * 2020-03-23 2025-01-17 Soitec Silicon On Insulator Procédé de préparation d’une couche mince

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
US5877070A (en) 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
JP3412470B2 (ja) * 1997-09-04 2003-06-03 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
JPH11307747A (ja) * 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
US6600173B2 (en) * 2000-08-30 2003-07-29 Cornell Research Foundation, Inc. Low temperature semiconductor layering and three-dimensional electronic circuits using the layering

Also Published As

Publication number Publication date
FR2847076B1 (fr) 2005-02-18
JP2006505928A (ja) 2006-02-16
EP1559139A2 (en) 2005-08-03
KR20050060111A (ko) 2005-06-21
AU2003298137A8 (en) 2004-06-07
AU2003298137A1 (en) 2004-06-07
FR2847076A1 (fr) 2004-05-14
WO2004042779A3 (en) 2004-09-23
TW200423295A (en) 2004-11-01
KR101122859B1 (ko) 2012-03-21
JP2012084897A (ja) 2012-04-26
TWI294663B (en) 2008-03-11
WO2004042779A2 (en) 2004-05-21
EP1559139B1 (en) 2013-05-29
CN1708843B (zh) 2010-08-18
CN1708843A (zh) 2005-12-14

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