TWI294663B - Method of detaching a thin film at moderate temperature after co-implantation - Google Patents
Method of detaching a thin film at moderate temperature after co-implantation Download PDFInfo
- Publication number
- TWI294663B TWI294663B TW092130723A TW92130723A TWI294663B TW I294663 B TWI294663 B TW I294663B TW 092130723 A TW092130723 A TW 092130723A TW 92130723 A TW92130723 A TW 92130723A TW I294663 B TWI294663 B TW I294663B
- Authority
- TW
- Taiwan
- Prior art keywords
- species
- substrate
- source substrate
- dose
- temperature
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
- H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0213935A FR2847076B1 (fr) | 2002-11-07 | 2002-11-07 | Procede de detachement d'une couche mince a temperature moderee apres co-implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200423295A TW200423295A (en) | 2004-11-01 |
| TWI294663B true TWI294663B (en) | 2008-03-11 |
Family
ID=32116442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092130723A TWI294663B (en) | 2002-11-07 | 2003-11-04 | Method of detaching a thin film at moderate temperature after co-implantation |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP1559139B1 (enExample) |
| JP (2) | JP4999272B2 (enExample) |
| KR (1) | KR101122859B1 (enExample) |
| CN (1) | CN1708843B (enExample) |
| AU (1) | AU2003298137A1 (enExample) |
| FR (1) | FR2847076B1 (enExample) |
| TW (1) | TWI294663B (enExample) |
| WO (1) | WO2004042779A2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
| EP1605504B1 (en) * | 2004-06-10 | 2011-05-25 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method for manufacturing a SOI wafer |
| CN100527416C (zh) * | 2004-08-18 | 2009-08-12 | 康宁股份有限公司 | 应变绝缘体上半导体结构以及应变绝缘体上半导体结构的制造方法 |
| CN101027768B (zh) * | 2004-09-21 | 2010-11-03 | S.O.I.Tec绝缘体上硅技术公司 | 根据避免气泡形成和限制粗糙度的条件来进行共注入步骤的薄层转移方法 |
| DE602004027422D1 (de) * | 2004-09-21 | 2010-07-08 | Soitec Silicon On Insulator | Übertragungsverfahren mit einer behandlung einer zu verbindenden oberfläche |
| WO2006037783A1 (fr) * | 2004-10-04 | 2006-04-13 | S.O.I.Tec Silicon On Insulator Technologies | Procédé de transfert d'une couche mince comprenant une perturbation controlée d'une structure cristalline |
| FR2889887B1 (fr) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
| FR2891281B1 (fr) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
| FR2907966B1 (fr) | 2006-10-27 | 2009-01-30 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat. |
| FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
| KR100873299B1 (ko) * | 2007-08-20 | 2008-12-11 | 주식회사 실트론 | Ｓｓｏｉ 기판의 제조방법 |
| FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
| FR2949606B1 (fr) | 2009-08-26 | 2011-10-28 | Commissariat Energie Atomique | Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation |
| FR2974944B1 (fr) * | 2011-05-02 | 2013-06-14 | Commissariat Energie Atomique | Procédé de formation d'une fracture dans un matériau |
| KR101219358B1 (ko) * | 2011-07-26 | 2013-01-21 | 삼성코닝정밀소재 주식회사 | 기판 분리 방법 및 이를 이용한 접합기판 제조방법 |
| FR3045678B1 (fr) | 2015-12-22 | 2017-12-22 | Soitec Silicon On Insulator | Procede de fabrication d'une couche piezoelectrique monocristalline et dispositif microelectronique, photonique ou optique comprenant une telle couche |
| FR3045677B1 (fr) | 2015-12-22 | 2019-07-19 | Soitec | Procede de fabrication d'une couche monocristalline, notamment piezoelectrique |
| JP6563360B2 (ja) * | 2016-04-05 | 2019-08-21 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
| CN106222754A (zh) * | 2016-07-29 | 2016-12-14 | 成都立威讯科技有限公司 | 一种工艺精湛的蓝宝石分离方法 |
| DE102016118268B4 (de) * | 2016-09-27 | 2025-06-26 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines einkristallinen Substrats und mikromechanische Struktur |
| WO2020247531A1 (en) * | 2019-06-06 | 2020-12-10 | Applied Materials, Inc. | Methods of post treating silicon nitride based dielectric films with high energy low dose plasma |
| FR3108440B1 (fr) * | 2020-03-23 | 2025-01-17 | Soitec Silicon On Insulator | Procédé de préparation d’une couche mince |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2738671B1 (fr) * | 1995-09-13 | 1997-10-10 | Commissariat Energie Atomique | Procede de fabrication de films minces a materiau semiconducteur |
| US5877070A (en) | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
| US6150239A (en) * | 1997-05-31 | 2000-11-21 | Max Planck Society | Method for the transfer of thin layers monocrystalline material onto a desirable substrate |
| JP3412470B2 (ja) * | 1997-09-04 | 2003-06-03 | 三菱住友シリコン株式会社 | Ｓｏｉ基板の製造方法 |
| JPH11307747A (ja) * | 1998-04-17 | 1999-11-05 | Nec Corp | Ｓｏｉ基板およびその製造方法 |
| FR2811807B1 (fr) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
| US6600173B2 (en) * | 2000-08-30 | 2003-07-29 | Cornell Research Foundation, Inc. | Low temperature semiconductor layering and three-dimensional electronic circuits using the layering |
-
2002
- 2002-11-07 FR FR0213935A patent/FR2847076B1/fr not_active Expired - Fee Related
-
2003
- 2003-10-30 EP EP03795839.4A patent/EP1559139B1/en not_active Expired - Lifetime
- 2003-10-30 JP JP2004549162A patent/JP4999272B2/ja not_active Expired - Lifetime
- 2003-10-30 WO PCT/EP2003/013148 patent/WO2004042779A2/en not_active Ceased
- 2003-10-30 KR KR1020057008067A patent/KR101122859B1/ko not_active Expired - Lifetime
- 2003-10-30 CN CN2003801023000A patent/CN1708843B/zh not_active Expired - Lifetime
- 2003-10-30 AU AU2003298137A patent/AU2003298137A1/en not_active Abandoned
- 2003-11-04 TW TW092130723A patent/TWI294663B/zh not_active IP Right Cessation
-
2011
- 2011-11-04 JP JP2011242033A patent/JP2012084897A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2847076B1 (fr) | 2005-02-18 |
| JP2006505928A (ja) | 2006-02-16 |
| EP1559139A2 (en) | 2005-08-03 |
| KR20050060111A (ko) | 2005-06-21 |
| AU2003298137A8 (en) | 2004-06-07 |
| AU2003298137A1 (en) | 2004-06-07 |
| FR2847076A1 (fr) | 2004-05-14 |
| WO2004042779A3 (en) | 2004-09-23 |
| TW200423295A (en) | 2004-11-01 |
| KR101122859B1 (ko) | 2012-03-21 |
| JP4999272B2 (ja) | 2012-08-15 |
| JP2012084897A (ja) | 2012-04-26 |
| WO2004042779A2 (en) | 2004-05-21 |
| EP1559139B1 (en) | 2013-05-29 |
| CN1708843B (zh) | 2010-08-18 |
| CN1708843A (zh) | 2005-12-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |