JP4986964B2 - 対流冷却構造を有する結晶成長炉 - Google Patents

対流冷却構造を有する結晶成長炉 Download PDF

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Publication number
JP4986964B2
JP4986964B2 JP2008250165A JP2008250165A JP4986964B2 JP 4986964 B2 JP4986964 B2 JP 4986964B2 JP 2008250165 A JP2008250165 A JP 2008250165A JP 2008250165 A JP2008250165 A JP 2008250165A JP 4986964 B2 JP4986964 B2 JP 4986964B2
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Prior art keywords
heater
crystal growth
heating chamber
furnace
growth furnace
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Expired - Fee Related
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JP2008250165A
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Japanese (ja)
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JP2009150637A (ja
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レウ ショウ−ジェン
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グリーン エナジー テクノロジー インク．
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Furnace Details (AREA)
JP2008250165A 2007-12-21 2008-09-29 対流冷却構造を有する結晶成長炉 Expired - Fee Related JP4986964B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW096149221A TW200928018A (en) 2007-12-21 2007-12-21 Crystal-growing furnace with convectional cooling structure
TW096149221 2007-12-21

Publications (2)

Publication Number Publication Date
JP2009150637A JP2009150637A (ja) 2009-07-09
JP4986964B2 true JP4986964B2 (ja) 2012-07-25

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JP2008250165A Expired - Fee Related JP4986964B2 (ja) 2007-12-21 2008-09-29 対流冷却構造を有する結晶成長炉

Country Status (4)

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US (1) US8062423B2 (enExample)
JP (1) JP4986964B2 (enExample)
DE (1) DE102008026144B4 (enExample)
TW (1) TW200928018A (enExample)

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CN101949056B (zh) * 2010-09-25 2013-01-30 王敬 在坩埚侧壁底端设置有保温部件的定向凝固炉
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
TWI539039B (zh) * 2012-01-26 2016-06-21 希利柯爾材料股份有限公司 矽的純化方法
EP2864529A1 (en) * 2012-06-25 2015-04-29 Silicor Materials Inc. Lining for surfaces of a refractory crucible for purification of silicon melt and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification
CN103014851B (zh) * 2012-12-25 2016-01-27 南昌大学 一种生产定向凝固多晶硅锭的方法
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
GB201319671D0 (en) 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
CN103615891B (zh) * 2013-11-20 2016-10-05 合肥日新高温技术有限公司 一种真空气氛高压碳板炉
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩
CN105648525B (zh) * 2014-11-17 2018-07-10 镇江荣德新能源科技有限公司 用于多晶硅定向凝固工艺的多晶炉
TWI614473B (zh) * 2015-07-20 2018-02-11 茂迪股份有限公司 長晶爐設備
US20180347071A1 (en) * 2015-07-27 2018-12-06 Corner Star Limited Systems and methods for low-oxygen crystal growth using a double-layer continuous czochralski process
CN105088338A (zh) * 2015-08-14 2015-11-25 晶科能源有限公司 一种多晶铸锭炉及排气装置
CN108048903A (zh) * 2016-02-03 2018-05-18 陈鸽 一种改变载气流向的引流装置
EP3558780B1 (en) * 2016-12-22 2023-06-07 ETran, Inc. Elevated transportation system
CN107523865A (zh) * 2017-09-28 2017-12-29 浙江晶盛机电股份有限公司 一种定向水冷散热的节能型高效多晶硅铸锭炉
JP7186534B2 (ja) 2018-07-25 2022-12-09 昭和電工株式会社 結晶成長装置
CN108842180A (zh) * 2018-08-24 2018-11-20 常州四杰机械科技有限公司 一种准单晶铸锭炉下炉体机构
CN109295495B (zh) * 2018-11-19 2020-08-04 江苏斯力康科技有限公司 利于控制定向凝固平直液固界面的温场调控机构
CN110184651A (zh) * 2019-07-17 2019-08-30 晶科能源有限公司 一种多晶铸锭炉
CN112857039B (zh) * 2021-03-06 2023-08-15 陕西万豪钛金特材科技有限公司 一种基于合金熔炼的烧结炉及冷却方法
CN114455591B (zh) * 2022-01-18 2023-08-18 山西宏晟利隆科技有限公司 一种工业制造二氧化硅设备

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Also Published As

Publication number Publication date
DE102008026144B4 (de) 2013-02-14
TWI363109B (enExample) 2012-05-01
US20090158995A1 (en) 2009-06-25
JP2009150637A (ja) 2009-07-09
US8062423B2 (en) 2011-11-22
DE102008026144A1 (de) 2009-06-25
TW200928018A (en) 2009-07-01

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