TW200928018A - Crystal-growing furnace with convectional cooling structure - Google Patents

Crystal-growing furnace with convectional cooling structure Download PDF

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Publication number
TW200928018A
TW200928018A TW096149221A TW96149221A TW200928018A TW 200928018 A TW200928018 A TW 200928018A TW 096149221 A TW096149221 A TW 096149221A TW 96149221 A TW96149221 A TW 96149221A TW 200928018 A TW200928018 A TW 200928018A
Authority
TW
Taiwan
Prior art keywords
furnace
heater
heating chamber
crystal growth
partition
Prior art date
Application number
TW096149221A
Other languages
English (en)
Chinese (zh)
Other versions
TWI363109B (enExample
Inventor
Shiou-Jeng Liu
Original Assignee
Green Energy Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Green Energy Technology Inc filed Critical Green Energy Technology Inc
Priority to TW096149221A priority Critical patent/TW200928018A/zh
Priority to US12/153,545 priority patent/US8062423B2/en
Priority to DE102008026144A priority patent/DE102008026144B4/de
Priority to JP2008250165A priority patent/JP4986964B2/ja
Publication of TW200928018A publication Critical patent/TW200928018A/zh
Application granted granted Critical
Publication of TWI363109B publication Critical patent/TWI363109B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Furnace Details (AREA)
TW096149221A 2007-12-21 2007-12-21 Crystal-growing furnace with convectional cooling structure TW200928018A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW096149221A TW200928018A (en) 2007-12-21 2007-12-21 Crystal-growing furnace with convectional cooling structure
US12/153,545 US8062423B2 (en) 2007-12-21 2008-05-21 Crystal-growing furnace with convectional cooling structure
DE102008026144A DE102008026144B4 (de) 2007-12-21 2008-05-30 Kristallzüchtungsofen mit Konvektionskühlungsstruktur
JP2008250165A JP4986964B2 (ja) 2007-12-21 2008-09-29 対流冷却構造を有する結晶成長炉

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096149221A TW200928018A (en) 2007-12-21 2007-12-21 Crystal-growing furnace with convectional cooling structure

Publications (2)

Publication Number Publication Date
TW200928018A true TW200928018A (en) 2009-07-01
TWI363109B TWI363109B (enExample) 2012-05-01

Family

ID=40690082

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096149221A TW200928018A (en) 2007-12-21 2007-12-21 Crystal-growing furnace with convectional cooling structure

Country Status (4)

Country Link
US (1) US8062423B2 (enExample)
JP (1) JP4986964B2 (enExample)
DE (1) DE102008026144B4 (enExample)
TW (1) TW200928018A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI614473B (zh) * 2015-07-20 2018-02-11 茂迪股份有限公司 長晶爐設備
CN110777427A (zh) * 2018-07-25 2020-02-11 昭和电工株式会社 晶体生长装置

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TW200928018A (en) * 2007-12-21 2009-07-01 Green Energy Technology Inc Crystal-growing furnace with convectional cooling structure
TW200932963A (en) * 2008-01-29 2009-08-01 Green Energy Technology Inc Crystal growing furnace with heating improvement structure
KR100902859B1 (ko) * 2009-02-17 2009-06-16 (주) 썸백엔지니어링 태양전지용 실리콘 제조용 캐스팅 장치
IT1396761B1 (it) * 2009-10-21 2012-12-14 Saet Spa Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio
CN101949056B (zh) * 2010-09-25 2013-01-30 王敬 在坩埚侧壁底端设置有保温部件的定向凝固炉
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
TWI539039B (zh) * 2012-01-26 2016-06-21 希利柯爾材料股份有限公司 矽的純化方法
EP2864529A1 (en) * 2012-06-25 2015-04-29 Silicor Materials Inc. Lining for surfaces of a refractory crucible for purification of silicon melt and method of purification of the silicon melt using that crucible (s) for melting and further directional solidification
CN103014851B (zh) * 2012-12-25 2016-01-27 南昌大学 一种生产定向凝固多晶硅锭的方法
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
GB201319671D0 (en) 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
CN103615891B (zh) * 2013-11-20 2016-10-05 合肥日新高温技术有限公司 一种真空气氛高压碳板炉
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩
CN105648525B (zh) * 2014-11-17 2018-07-10 镇江荣德新能源科技有限公司 用于多晶硅定向凝固工艺的多晶炉
US20180347071A1 (en) * 2015-07-27 2018-12-06 Corner Star Limited Systems and methods for low-oxygen crystal growth using a double-layer continuous czochralski process
CN105088338A (zh) * 2015-08-14 2015-11-25 晶科能源有限公司 一种多晶铸锭炉及排气装置
CN108048903A (zh) * 2016-02-03 2018-05-18 陈鸽 一种改变载气流向的引流装置
EP3558780B1 (en) * 2016-12-22 2023-06-07 ETran, Inc. Elevated transportation system
CN107523865A (zh) * 2017-09-28 2017-12-29 浙江晶盛机电股份有限公司 一种定向水冷散热的节能型高效多晶硅铸锭炉
CN108842180A (zh) * 2018-08-24 2018-11-20 常州四杰机械科技有限公司 一种准单晶铸锭炉下炉体机构
CN109295495B (zh) * 2018-11-19 2020-08-04 江苏斯力康科技有限公司 利于控制定向凝固平直液固界面的温场调控机构
CN110184651A (zh) * 2019-07-17 2019-08-30 晶科能源有限公司 一种多晶铸锭炉
CN112857039B (zh) * 2021-03-06 2023-08-15 陕西万豪钛金特材科技有限公司 一种基于合金熔炼的烧结炉及冷却方法
CN114455591B (zh) * 2022-01-18 2023-08-18 山西宏晟利隆科技有限公司 一种工业制造二氧化硅设备

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI614473B (zh) * 2015-07-20 2018-02-11 茂迪股份有限公司 長晶爐設備
CN110777427A (zh) * 2018-07-25 2020-02-11 昭和电工株式会社 晶体生长装置
US11105016B2 (en) 2018-07-25 2021-08-31 Showa Denko K.K. Crystal growth apparatus with controlled center position of heating
CN110777427B (zh) * 2018-07-25 2021-11-19 昭和电工株式会社 晶体生长装置

Also Published As

Publication number Publication date
DE102008026144B4 (de) 2013-02-14
TWI363109B (enExample) 2012-05-01
US20090158995A1 (en) 2009-06-25
JP2009150637A (ja) 2009-07-09
US8062423B2 (en) 2011-11-22
DE102008026144A1 (de) 2009-06-25
JP4986964B2 (ja) 2012-07-25

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