KR100902859B1 - 태양전지용 실리콘 제조용 캐스팅 장치 - Google Patents
태양전지용 실리콘 제조용 캐스팅 장치 Download PDFInfo
- Publication number
- KR100902859B1 KR100902859B1 KR1020090012979A KR20090012979A KR100902859B1 KR 100902859 B1 KR100902859 B1 KR 100902859B1 KR 1020090012979 A KR1020090012979 A KR 1020090012979A KR 20090012979 A KR20090012979 A KR 20090012979A KR 100902859 B1 KR100902859 B1 KR 100902859B1
- Authority
- KR
- South Korea
- Prior art keywords
- heat insulating
- insulating material
- insulation
- silicon
- container
- Prior art date
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 68
- 239000010703 silicon Substances 0.000 title claims abstract description 68
- 238000005266 casting Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 66
- 238000002844 melting Methods 0.000 claims abstract description 18
- 230000008018 melting Effects 0.000 claims abstract description 18
- 239000011810 insulating material Substances 0.000 claims description 78
- 238000009413 insulation Methods 0.000 claims description 60
- 239000013078 crystal Substances 0.000 claims description 27
- 238000001816 cooling Methods 0.000 claims description 23
- 239000012774 insulation material Substances 0.000 claims description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 5
- 239000012212 insulator Substances 0.000 abstract 9
- 238000000034 method Methods 0.000 description 14
- 239000007787 solid Substances 0.000 description 13
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (3)
- 불활성가스를 주입하는 가스유입구(11)가 설치된 챔버(10)와, 받침대(21)의 상부로 안착되며 실리콘 용융액이 수용되는 용기(20)와, 상기 용기(20) 상/하부에 각각 위치되는 상/하부히터(30,40)와, 상기 용기(20)의 측면공간을 둘러싸도록 측면단열재(51)를 결합하고, 상기 측면단열재(51)의 개방된 상하부에 상/하부단열재(52,53)를 결합하여 폐쇄하되, 상기 하부단열재(53)는 하부고정단열재(53a)에서 분리되는 하부이동단열재(53b)가 하부이동장치(53c)에 의해 이동되도록 형성된 단열재부(50)로 이루어진 실리콘 제조용 캐스팅 장치에 있어서,상기 단열재부(50)의 측면단열재(51)는 측면고정단열재(51a)와 측면이동단열재(51b)로 구성되어, 상기 측면이동단열재(51b)는 측면이동장치(51c)의 작동으로 받침대(21) 상부면을 따라 수평으로 이동하고,상기 단열재부(50)의 상부단열재(52)는 상부고정단열재(52a)와 상부이동단열재(52b)로 구성되어, 상기 상부이동단열재(52b)는 상부이동장치(52c)의 작동으로 승하강되도록 구성되는 것을 특징으로 하는 태양전지용 실리콘 제조용 캐스팅 장치.
- 제 1항에 있어서, 상기 측면단열재(51)의 측면이동단열재(51b)는 실리콘 용융시에 측면이동장치(51c)의 작동에 의해 용기(20) 외측면과 이격되도록 이동하여 단열을 해제하고, 결정생성 냉각시에는 용기(20)의 외측면과 밀착되도록 이동하여 단열하도록 구성되는 것을 특징으로 하는 태양전지용 실리콘 제조용 캐스팅 장치.
- 제 1항에 있어서, 상기 상부단열재(52)의 상부이동단열재(52b)는 실리콘 용융과 결정생성 냉각시에 상부이동장치(52c)의 작동에 의해 하강되어 단열부재(50)의 내부공간을 폐쇄하고, 급속냉각시에는 승강되어 단열재부(50)의 내부공간을 개방하도록 구성되는 것을 특징으로 하는 태양전지용 실리콘 제조용 캐스팅 장치.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090012979A KR100902859B1 (ko) | 2009-02-17 | 2009-02-17 | 태양전지용 실리콘 제조용 캐스팅 장치 |
US12/629,997 US20100209319A1 (en) | 2009-02-17 | 2009-12-03 | Device for producing a crystallized silicon body for solar cells |
CN201010001221A CN101805924A (zh) | 2009-02-17 | 2010-01-08 | 用于生产太阳能电池的晶态硅衬底的装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090012979A KR100902859B1 (ko) | 2009-02-17 | 2009-02-17 | 태양전지용 실리콘 제조용 캐스팅 장치 |
Publications (1)
Publication Number | Publication Date |
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KR100902859B1 true KR100902859B1 (ko) | 2009-06-16 |
Family
ID=40982763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020090012979A KR100902859B1 (ko) | 2009-02-17 | 2009-02-17 | 태양전지용 실리콘 제조용 캐스팅 장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100209319A1 (ko) |
KR (1) | KR100902859B1 (ko) |
CN (1) | CN101805924A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120248286A1 (en) * | 2011-03-31 | 2012-10-04 | Memc Singapore Pte. Ltd. (Uen200614794D) | Systems For Insulating Directional Solidification Furnaces |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5762841B2 (ja) * | 2011-06-21 | 2015-08-12 | 東京エレクトロン株式会社 | 半導体製造装置 |
ITTO20130258A1 (it) * | 2013-03-28 | 2014-09-29 | Saet Spa | Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale |
CN103409798B (zh) * | 2013-08-03 | 2016-02-24 | 安徽大晟新能源设备科技有限公司 | 准单晶铸锭炉的下加热器固定结构 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000290096A (ja) | 1999-04-08 | 2000-10-17 | Mitsubishi Materials Corp | 結晶シリコン製造装置 |
JP2001048696A (ja) | 1999-08-06 | 2001-02-20 | Mitsubishi Materials Corp | 結晶シリコン製造装置 |
KR20070118945A (ko) * | 2006-06-13 | 2007-12-18 | 김영조 | 다결정 실리콘 잉곳 제조장치 |
KR20080068423A (ko) * | 2007-01-19 | 2008-07-23 | 주식회사 글로실 | 태양전지용 다결정 실리콘 주괴 제조 장치 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7344596B2 (en) * | 2005-08-25 | 2008-03-18 | Crystal Systems, Inc. | System and method for crystal growing |
US8057598B2 (en) * | 2006-06-13 | 2011-11-15 | Young Sang Cho | Manufacturing equipment for polysilicon ingot |
TW200928018A (en) * | 2007-12-21 | 2009-07-01 | Green Energy Technology Inc | Crystal-growing furnace with convectional cooling structure |
-
2009
- 2009-02-17 KR KR1020090012979A patent/KR100902859B1/ko active IP Right Grant
- 2009-12-03 US US12/629,997 patent/US20100209319A1/en not_active Abandoned
-
2010
- 2010-01-08 CN CN201010001221A patent/CN101805924A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000290096A (ja) | 1999-04-08 | 2000-10-17 | Mitsubishi Materials Corp | 結晶シリコン製造装置 |
JP2001048696A (ja) | 1999-08-06 | 2001-02-20 | Mitsubishi Materials Corp | 結晶シリコン製造装置 |
KR20070118945A (ko) * | 2006-06-13 | 2007-12-18 | 김영조 | 다결정 실리콘 잉곳 제조장치 |
KR20080068423A (ko) * | 2007-01-19 | 2008-07-23 | 주식회사 글로실 | 태양전지용 다결정 실리콘 주괴 제조 장치 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120248286A1 (en) * | 2011-03-31 | 2012-10-04 | Memc Singapore Pte. Ltd. (Uen200614794D) | Systems For Insulating Directional Solidification Furnaces |
Also Published As
Publication number | Publication date |
---|---|
US20100209319A1 (en) | 2010-08-19 |
CN101805924A (zh) | 2010-08-18 |
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