JP4970679B2 - 温度均一性が改良されたプラズマ反応チャンバ構成部品及びそれを用いた処理方法 - Google Patents

温度均一性が改良されたプラズマ反応チャンバ構成部品及びそれを用いた処理方法 Download PDF

Info

Publication number
JP4970679B2
JP4970679B2 JP2001506573A JP2001506573A JP4970679B2 JP 4970679 B2 JP4970679 B2 JP 4970679B2 JP 2001506573 A JP2001506573 A JP 2001506573A JP 2001506573 A JP2001506573 A JP 2001506573A JP 4970679 B2 JP4970679 B2 JP 4970679B2
Authority
JP
Japan
Prior art keywords
transfer member
heat transfer
showerhead electrode
electrode
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001506573A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003503838A5 (enExample
JP2003503838A (ja
Inventor
ファングリ ハオ，
ラジンダー デインドサ，
ジャヴァド プルハシェミ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2003503838A publication Critical patent/JP2003503838A/ja
Publication of JP2003503838A5 publication Critical patent/JP2003503838A5/ja
Application granted granted Critical
Publication of JP4970679B2 publication Critical patent/JP4970679B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2001506573A 1999-06-30 2000-06-14 温度均一性が改良されたプラズマ反応チャンバ構成部品及びそれを用いた処理方法 Expired - Lifetime JP4970679B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/343,482 1999-06-30
US09/343,482 US6123775A (en) 1999-06-30 1999-06-30 Reaction chamber component having improved temperature uniformity
PCT/US2000/016786 WO2001001442A1 (en) 1999-06-30 2000-06-14 A plasma reaction chamber component having improved temperature uniformity

Publications (3)

Publication Number Publication Date
JP2003503838A JP2003503838A (ja) 2003-01-28
JP2003503838A5 JP2003503838A5 (enExample) 2007-08-23
JP4970679B2 true JP4970679B2 (ja) 2012-07-11

Family

ID=23346293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001506573A Expired - Lifetime JP4970679B2 (ja) 1999-06-30 2000-06-14 温度均一性が改良されたプラズマ反応チャンバ構成部品及びそれを用いた処理方法

Country Status (8)

Country Link
US (1) US6123775A (enExample)
EP (1) EP1190435A1 (enExample)
JP (1) JP4970679B2 (enExample)
KR (1) KR100733897B1 (enExample)
CN (1) CN100350545C (enExample)
AU (1) AU6052100A (enExample)
TW (1) TW473781B (enExample)
WO (1) WO2001001442A1 (enExample)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7515264B2 (en) * 1999-06-15 2009-04-07 Tokyo Electron Limited Particle-measuring system and particle-measuring method
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6444040B1 (en) * 2000-05-05 2002-09-03 Applied Materials Inc. Gas distribution plate
US6412437B1 (en) 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
DE60231601D1 (de) * 2001-01-22 2009-04-30 Tokio Electron Ltd Einrichtung und verfahren zur behandlung
KR100676979B1 (ko) * 2001-02-09 2007-02-01 동경 엘렉트론 주식회사 성막 장치
US6878206B2 (en) * 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US20020134513A1 (en) * 2001-03-22 2002-09-26 David Palagashvili Novel thermal transfer apparatus
JP4402860B2 (ja) * 2001-03-28 2010-01-20 忠弘 大見 プラズマ処理装置
US6537928B1 (en) * 2002-02-19 2003-03-25 Asm Japan K.K. Apparatus and method for forming low dielectric constant film
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US6786175B2 (en) 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
JP4082720B2 (ja) * 2001-09-10 2008-04-30 キヤノンアネルバ株式会社 基板表面処理装置
US7017514B1 (en) * 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
US7252738B2 (en) * 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US7500445B2 (en) * 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US7296534B2 (en) * 2003-04-30 2007-11-20 Tokyo Electron Limited Hybrid ball-lock attachment apparatus
JP4493932B2 (ja) * 2003-05-13 2010-06-30 東京エレクトロン株式会社 上部電極及びプラズマ処理装置
EP1667217A1 (en) * 2003-09-03 2006-06-07 Tokyo Electron Limited Gas treatment device and heat readiting method
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP4698251B2 (ja) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US7210538B2 (en) * 2004-03-27 2007-05-01 Cnh America Llc Center pivot wing flotation method and apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8540843B2 (en) 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US7780791B2 (en) * 2004-06-30 2010-08-24 Lam Research Corporation Apparatus for an optimized plasma chamber top piece
US20060000551A1 (en) * 2004-06-30 2006-01-05 Saldana Miguel A Methods and apparatus for optimal temperature control in a plasma processing system
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US20060065631A1 (en) * 2004-09-27 2006-03-30 Chia-Cheng Cheng Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
US20060065632A1 (en) * 2004-09-27 2006-03-30 Chia-Cheng Cheng Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency
KR100572118B1 (ko) * 2005-01-28 2006-04-18 주식회사 에이디피엔지니어링 플라즈마 처리장치
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
CN101696494B (zh) * 2005-05-09 2011-11-16 Asm吉尼泰克韩国株式会社 反应物沉积方法
KR100629358B1 (ko) * 2005-05-24 2006-10-02 삼성전자주식회사 샤워 헤드
US20070044714A1 (en) * 2005-08-31 2007-03-01 Applied Materials, Inc. Method and apparatus for maintaining a cross sectional shape of a diffuser during processing
US7641762B2 (en) * 2005-09-02 2010-01-05 Applied Materials, Inc. Gas sealing skirt for suspended showerhead in process chamber
KR101036185B1 (ko) 2005-09-30 2011-05-23 엘아이지에이디피 주식회사 플라즈마 처리장치
US7826724B2 (en) * 2006-04-24 2010-11-02 Nordson Corporation Electronic substrate non-contact heating system and method
US7776178B2 (en) * 2006-10-25 2010-08-17 Applied Materials, Inc. Suspension for showerhead in process chamber
US20080166880A1 (en) * 2007-01-08 2008-07-10 Levy David H Delivery device for deposition
JP4826483B2 (ja) * 2007-01-19 2011-11-30 東京エレクトロン株式会社 プラズマ処理装置
US20080194112A1 (en) * 2007-02-09 2008-08-14 International Business Machines Corporation Method and system for plasma etching having improved across-wafer etch uniformity
JP4928991B2 (ja) 2007-03-12 2012-05-09 東京エレクトロン株式会社 基板処理装置
US8069817B2 (en) 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
JP5008478B2 (ja) * 2007-06-27 2012-08-22 東京エレクトロン株式会社 基板処理装置およびシャワーヘッド
US8187414B2 (en) 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
WO2009120862A2 (en) * 2008-03-26 2009-10-01 Gt Solar, Inc. Systems and methods for distributing gas in a chemical vapor deposition reactor
RU2010143546A (ru) * 2008-03-26 2012-05-10 ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) Реакторная система с золотым покрытием для осаждения поликристаллического кремния и способ
KR101110080B1 (ko) * 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
WO2011044451A2 (en) * 2009-10-09 2011-04-14 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US20110097489A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Distribution manifold including multiple fluid communication ports
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
JP2013012353A (ja) * 2011-06-28 2013-01-17 Hitachi High-Technologies Corp プラズマ処理装置
JP2015536043A (ja) * 2012-09-26 2015-12-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板処理システムにおける温度制御
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
KR102156795B1 (ko) * 2013-05-15 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 증착 장치
TWI470105B (zh) * 2013-06-03 2015-01-21 Adpv Technology Ltd Gas Reaction Continuous Cavity and Gas Reaction
KR101560623B1 (ko) * 2014-01-03 2015-10-15 주식회사 유진테크 기판처리장치 및 기판처리방법
US9469912B2 (en) 2014-04-21 2016-10-18 Lam Research Corporation Pretreatment method for photoresist wafer processing
US9472377B2 (en) 2014-10-17 2016-10-18 Lam Research Corporation Method and apparatus for characterizing metal oxide reduction
CA3183289A1 (en) 2015-09-08 2017-03-16 Jcr Pharmaceuticals Co., Ltd. Novel human serum albumin mutant
JP6903638B2 (ja) * 2015-09-15 2021-07-14 ライフ テクノロジーズ コーポレーション 生物学的分析のためのシステム及び方法
US10483092B2 (en) * 2016-04-13 2019-11-19 Lam Research Corporation Baffle plate and showerhead assemblies and corresponding manufacturing method
KR102195798B1 (ko) * 2016-09-23 2020-12-28 어플라이드 머티어리얼스, 인코포레이티드 스퍼터링 샤워헤드
US10607817B2 (en) * 2016-11-18 2020-03-31 Applied Materials, Inc. Thermal repeatability and in-situ showerhead temperature monitoring
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US11776822B2 (en) * 2018-05-29 2023-10-03 Applied Materials, Inc. Wet cleaning of electrostatic chuck
JP6575641B1 (ja) * 2018-06-28 2019-09-18 株式会社明電舎 シャワーヘッドおよび処理装置
US12181801B2 (en) 2021-05-03 2024-12-31 Applied Materials, Inc. Chamber and methods of treating a substrate after exposure to radiation
KR20230018969A (ko) * 2021-07-30 2023-02-07 램 리써치 코포레이션 고경도 플레넘들을 갖는 샤워헤드들
JP2025502481A (ja) * 2022-01-24 2025-01-24 ラム リサーチ コーポレーション 高温プロセス用シャワーヘッドのアクティブ温度制御
US12170186B2 (en) * 2022-04-15 2024-12-17 Applied Materials, Inc. Showerhead assembly with heated showerhead

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
US4337495A (en) * 1980-06-13 1982-06-29 Porta Systems Corp. Carbon electrode having metallic heat sink
US4481636A (en) * 1982-05-05 1984-11-06 Council For Mineral Technology Electrode assemblies for thermal plasma generating devices
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
CH664303A5 (de) * 1985-04-03 1988-02-29 Balzers Hochvakuum Haltevorrichtung fuer targets fuer kathodenzerstaeubung.
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
JPH066505Y2 (ja) * 1986-04-11 1994-02-16 沖電気工業株式会社 電極の冷却機構
EP0276962A1 (en) * 1987-01-27 1988-08-03 Machine Technology Inc. Cooling device for a sputter target and source
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5078851A (en) * 1989-07-26 1992-01-07 Kouji Nishihata Low-temperature plasma processor
JPH0382022A (ja) * 1989-08-24 1991-04-08 Nec Corp ドライエッチング装置
JP2903239B2 (ja) * 1990-03-15 1999-06-07 東京エレクトロン株式会社 プラズマエッチング方法
US5151918A (en) * 1990-08-28 1992-09-29 Argent Ronald D Electrode blocks and block assemblies
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
JP2851229B2 (ja) * 1992-10-19 1999-01-27 株式会社日立製作所 プラズマエッチングシステム及びプラズマエッチング方法
JP3242166B2 (ja) * 1992-11-19 2001-12-25 株式会社日立製作所 エッチング装置
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
JP3308091B2 (ja) * 1994-02-03 2002-07-29 東京エレクトロン株式会社 表面処理方法およびプラズマ処理装置
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
GB9413973D0 (en) * 1994-07-11 1994-08-31 Rank Brimar Ltd Electrode structure
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5772770A (en) * 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
JP3599204B2 (ja) * 1995-06-08 2004-12-08 アネルバ株式会社 Ｃｖｄ装置
JP3113796B2 (ja) * 1995-07-10 2000-12-04 東京エレクトロン株式会社 プラズマ処理装置
US5879348A (en) * 1996-04-12 1999-03-09 Ep Technologies, Inc. Electrode structures formed from flexible, porous, or woven materials
TW340957B (en) * 1996-02-01 1998-09-21 Canon Hanbai Kk Plasma processor and gas release device
US5730803A (en) * 1996-02-23 1998-03-24 Applied Materials, Inc. Apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold body
JP3360265B2 (ja) * 1996-04-26 2002-12-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP3310171B2 (ja) * 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
US6589407B1 (en) * 1997-05-23 2003-07-08 Applied Materials, Inc. Aluminum deposition shield

Also Published As

Publication number Publication date
US6123775A (en) 2000-09-26
KR100733897B1 (ko) 2007-07-02
KR20020027374A (ko) 2002-04-13
TW473781B (en) 2002-01-21
CN100350545C (zh) 2007-11-21
WO2001001442A9 (en) 2003-01-30
CN1370325A (zh) 2002-09-18
EP1190435A1 (en) 2002-03-27
JP2003503838A (ja) 2003-01-28
AU6052100A (en) 2001-01-31
WO2001001442A1 (en) 2001-01-04

Similar Documents

Publication Publication Date Title
JP4970679B2 (ja) 温度均一性が改良されたプラズマ反応チャンバ構成部品及びそれを用いた処理方法
US6245192B1 (en) Gas distribution apparatus for semiconductor processing
KR101476566B1 (ko) 다이나믹 온도 제어를 가지는 기판 지지대
CN101903996B (zh) 用于控制衬底温度的方法和设备
JP4745961B2 (ja) 温度制御された基板支持体表面を有する基板支持体及びその制御方法並びに半導体処理装置及びその方法
US8075729B2 (en) Method and apparatus for controlling temperature of a substrate
US20030029715A1 (en) An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
JP2000505152A (ja) 真空処理装置のための熱伝導性チャック
CN110867363B (zh) 等离子体处理装置
CN112053988A (zh) 具有独立隔离的加热器区域的晶片载体
JP2012054594A (ja) 半導体処理の均一性を改善するための熱伝達システム
JP2004282047A (ja) 静電チャック
KR20240094004A (ko) Pvd 챔버를 위한 고온 탈착가능 초고주파(vhf) 정전 척(esc)
JP2003243490A (ja) ウエハ処理装置とウエハステージ及びウエハ処理方法
US20070044914A1 (en) Vacuum processing apparatus
KR20240141741A (ko) 고온 프로세스에 대한 샤워헤드의 능동적 온도 제어

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070614

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070614

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100702

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101001

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110513

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110812

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110819

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110909

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111007

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120119

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20120125

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120316

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120405

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150413

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4970679

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term