CN100350545C - 具有经改善的温度均匀性的等离子体反应室部件 - Google Patents

具有经改善的温度均匀性的等离子体反应室部件 Download PDF

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Publication number
CN100350545C
CN100350545C CNB008097259A CN00809725A CN100350545C CN 100350545 C CN100350545 C CN 100350545C CN B008097259 A CNB008097259 A CN B008097259A CN 00809725 A CN00809725 A CN 00809725A CN 100350545 C CN100350545 C CN 100350545C
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CN
China
Prior art keywords
showerhead electrode
heat transfer
parts
transfer member
radiator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB008097259A
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English (en)
Chinese (zh)
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CN1370325A (zh
Inventor
郝芳莉
拉金德尔·丁德萨
加瓦德·泊哈什米
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
CNB008097259A 1999-06-30 2000-06-14 具有经改善的温度均匀性的等离子体反应室部件 Expired - Lifetime CN100350545C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/343,482 US6123775A (en) 1999-06-30 1999-06-30 Reaction chamber component having improved temperature uniformity
US09/343,482 1999-06-30

Publications (2)

Publication Number Publication Date
CN1370325A CN1370325A (zh) 2002-09-18
CN100350545C true CN100350545C (zh) 2007-11-21

Family

ID=23346293

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008097259A Expired - Lifetime CN100350545C (zh) 1999-06-30 2000-06-14 具有经改善的温度均匀性的等离子体反应室部件

Country Status (8)

Country Link
US (1) US6123775A (enExample)
EP (1) EP1190435A1 (enExample)
JP (1) JP4970679B2 (enExample)
KR (1) KR100733897B1 (enExample)
CN (1) CN100350545C (enExample)
AU (1) AU6052100A (enExample)
TW (1) TW473781B (enExample)
WO (1) WO2001001442A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110085501A (zh) * 2013-03-06 2019-08-02 朗姆研究公司 用于还原金属晶种层上的金属氧化物的方法及装置
US11208732B2 (en) 2017-03-30 2021-12-28 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating

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Publication number Priority date Publication date Assignee Title
CN110085501A (zh) * 2013-03-06 2019-08-02 朗姆研究公司 用于还原金属晶种层上的金属氧化物的方法及装置
US11208732B2 (en) 2017-03-30 2021-12-28 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating

Also Published As

Publication number Publication date
WO2001001442A1 (en) 2001-01-04
WO2001001442A9 (en) 2003-01-30
CN1370325A (zh) 2002-09-18
JP4970679B2 (ja) 2012-07-11
JP2003503838A (ja) 2003-01-28
KR20020027374A (ko) 2002-04-13
TW473781B (en) 2002-01-21
US6123775A (en) 2000-09-26
KR100733897B1 (ko) 2007-07-02
AU6052100A (en) 2001-01-31
EP1190435A1 (en) 2002-03-27

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