KR100733897B1 - 온도가 균일한 플라즈마 반응챔버 콤포넌트 - Google Patents

온도가 균일한 플라즈마 반응챔버 콤포넌트 Download PDF

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Publication number
KR100733897B1
KR100733897B1 KR1020017016765A KR20017016765A KR100733897B1 KR 100733897 B1 KR100733897 B1 KR 100733897B1 KR 1020017016765 A KR1020017016765 A KR 1020017016765A KR 20017016765 A KR20017016765 A KR 20017016765A KR 100733897 B1 KR100733897 B1 KR 100733897B1
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Prior art keywords
heat transfer
showerhead electrode
electrode
heat sink
temperature control
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Expired - Lifetime
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KR1020017016765A
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Korean (ko)
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KR20020027374A (ko
Inventor
하오팡리
딘드사라진더
푸어하셰미자바드
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
KR1020017016765A 1999-06-30 2000-06-14 온도가 균일한 플라즈마 반응챔버 콤포넌트 Expired - Lifetime KR100733897B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/343,482 US6123775A (en) 1999-06-30 1999-06-30 Reaction chamber component having improved temperature uniformity
US09/343,482 1999-06-30

Publications (2)

Publication Number Publication Date
KR20020027374A KR20020027374A (ko) 2002-04-13
KR100733897B1 true KR100733897B1 (ko) 2007-07-02

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KR1020017016765A Expired - Lifetime KR100733897B1 (ko) 1999-06-30 2000-06-14 온도가 균일한 플라즈마 반응챔버 콤포넌트

Country Status (8)

Country Link
US (1) US6123775A (enExample)
EP (1) EP1190435A1 (enExample)
JP (1) JP4970679B2 (enExample)
KR (1) KR100733897B1 (enExample)
CN (1) CN100350545C (enExample)
AU (1) AU6052100A (enExample)
TW (1) TW473781B (enExample)
WO (1) WO2001001442A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101036185B1 (ko) 2005-09-30 2011-05-23 엘아이지에이디피 주식회사 플라즈마 처리장치

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KR101036185B1 (ko) 2005-09-30 2011-05-23 엘아이지에이디피 주식회사 플라즈마 처리장치

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Publication number Publication date
WO2001001442A1 (en) 2001-01-04
WO2001001442A9 (en) 2003-01-30
CN1370325A (zh) 2002-09-18
JP4970679B2 (ja) 2012-07-11
JP2003503838A (ja) 2003-01-28
KR20020027374A (ko) 2002-04-13
TW473781B (en) 2002-01-21
US6123775A (en) 2000-09-26
CN100350545C (zh) 2007-11-21
AU6052100A (en) 2001-01-31
EP1190435A1 (en) 2002-03-27

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