JP4960397B2 - カーボンナノチューブ針及びその製造方法 - Google Patents
カーボンナノチューブ針及びその製造方法 Download PDFInfo
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- JP4960397B2 JP4960397B2 JP2009068673A JP2009068673A JP4960397B2 JP 4960397 B2 JP4960397 B2 JP 4960397B2 JP 2009068673 A JP2009068673 A JP 2009068673A JP 2009068673 A JP2009068673 A JP 2009068673A JP 4960397 B2 JP4960397 B2 JP 4960397B2
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00111—Tips, pillars, i.e. raised structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
- B81B2201/055—Microneedles
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/04—Nanotubes with a specific amount of walls
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/06—Multi-walled nanotubes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/08—Aligned nanotubes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/36—Diameter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Carbon And Carbon Compounds (AREA)
- Inorganic Fibers (AREA)
- Electron Sources, Ion Sources (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
124 第二端
126 カーボンナノチューブ
128 カーボンナノチューブ
22 第一電極
24 第二電極
28 カーボンナノチューブ糸
Claims (2)
- 第一端及び第二端を含むカーボンナノチューブ針であり、
前記カーボンナノチューブ針は、平行に配列された複数のカーボンナノチューブを含み、
該複数のカーボンナノチューブは、平行に配列され、端と端が分子間力で接続され、
前記第二端において、一つのカーボンナノチューブが他のカーボンナノチューブより外部へ延伸して、前記第二端は円錐形に近似していることを特徴とするカーボンナノチューブ針。 - 前記カーボンナノチューブ針の直径は1μm〜20μm、その長さは0.01〜1mmであることを特徴とする、請求項1に記載のカーボンナノチューブ針。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810066128.2 | 2008-03-19 | ||
| CN2008100661282A CN101538031B (zh) | 2008-03-19 | 2008-03-19 | 碳纳米管针尖及其制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009231287A JP2009231287A (ja) | 2009-10-08 |
| JP4960397B2 true JP4960397B2 (ja) | 2012-06-27 |
Family
ID=41089217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009068673A Active JP4960397B2 (ja) | 2008-03-19 | 2009-03-19 | カーボンナノチューブ針及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US20090239072A1 (ja) |
| JP (1) | JP4960397B2 (ja) |
| CN (1) | CN101538031B (ja) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101239712B (zh) * | 2007-02-09 | 2010-05-26 | 清华大学 | 碳纳米管薄膜结构及其制备方法 |
| CN101315974B (zh) * | 2007-06-01 | 2010-05-26 | 清华大学 | 锂离子电池负极及其制备方法 |
| CN101499390B (zh) * | 2008-02-01 | 2013-03-20 | 清华大学 | 电子发射器件及其制备方法 |
| CN101499389B (zh) * | 2008-02-01 | 2011-03-23 | 鸿富锦精密工业(深圳)有限公司 | 电子发射器件 |
| CN101540253B (zh) * | 2008-03-19 | 2011-03-23 | 清华大学 | 场发射电子源的制备方法 |
| CN101540251B (zh) * | 2008-03-19 | 2012-03-28 | 清华大学 | 场发射电子源 |
| CN101604603B (zh) * | 2008-06-13 | 2011-03-23 | 清华大学 | 场发射体及其制备方法 |
| CN102039708B (zh) * | 2009-10-22 | 2013-12-11 | 清华大学 | 一种粘合两基体的方法 |
| US9126836B2 (en) * | 2009-12-28 | 2015-09-08 | Korea University Research And Business Foundation | Method and device for CNT length control |
| CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
| CN102543633B (zh) * | 2010-12-31 | 2015-04-01 | 清华大学 | 场发射阴极装置及场发射显示器 |
| CN103288033B (zh) * | 2012-02-23 | 2016-02-17 | 清华大学 | 碳纳米管微尖结构的制备方法 |
| CN103193217B (zh) * | 2013-03-12 | 2014-12-24 | 南京理工大学 | 一种硼掺杂金刚石与碳纳米管复合纳米锥的制备方法 |
| CN103252544B (zh) * | 2013-05-20 | 2015-05-20 | 南京航空航天大学 | 长度可控碳纳米管电极制备与导电性能检测方法及装置 |
| US11069495B2 (en) * | 2019-01-25 | 2021-07-20 | Eaton Intelligent Power Limited | Vacuum switching apparatus and drive mechanism therefor |
| CN113023711B (zh) * | 2019-12-24 | 2022-10-18 | 清华大学 | 碳纳米管束的制备方法 |
| EP4159670B1 (en) * | 2021-01-15 | 2025-10-15 | National Center For Nanoscience And Technology | Functionalized carbon nanocone tip and preparation method therefor |
| JP7697629B2 (ja) * | 2022-02-10 | 2025-06-24 | 高圧ガス工業株式会社 | Cnt製品の製造方法 |
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| JP3792859B2 (ja) * | 1997-10-03 | 2006-07-05 | 株式会社ノリタケカンパニーリミテド | 電子銃 |
| JP3441396B2 (ja) * | 1998-12-03 | 2003-09-02 | 喜萬 中山 | 電子装置の表面信号操作用プローブ及びその製造方法 |
| US6232706B1 (en) * | 1998-11-12 | 2001-05-15 | The Board Of Trustees Of The Leland Stanford Junior University | Self-oriented bundles of carbon nanotubes and method of making same |
| US6504292B1 (en) * | 1999-07-15 | 2003-01-07 | Agere Systems Inc. | Field emitting device comprising metallized nanostructures and method for making the same |
| JP3737696B2 (ja) * | 2000-11-17 | 2006-01-18 | 株式会社東芝 | 横型の電界放出型冷陰極装置の製造方法 |
| JP2002334663A (ja) * | 2001-03-09 | 2002-11-22 | Vacuum Products Kk | 荷電粒子発生装置及びその発生方法 |
| JP2003123623A (ja) * | 2001-10-19 | 2003-04-25 | Noritake Itron Corp | 電子放出源用カーボンナノチューブおよびその製造方法 |
| JP4180289B2 (ja) * | 2002-03-18 | 2008-11-12 | 喜萬 中山 | ナノチューブ先鋭化方法 |
| CN1282216C (zh) * | 2002-09-16 | 2006-10-25 | 清华大学 | 一种灯丝及其制备方法 |
| CN1301212C (zh) * | 2002-09-17 | 2007-02-21 | 清华大学 | 一维纳米材料方向及形状调整方法 |
| SE0203377L (sv) * | 2002-11-13 | 2004-05-14 | Kim Bolton | Hantering av derivatiserade kolnanorör |
| CN1282211C (zh) * | 2002-11-14 | 2006-10-25 | 清华大学 | 一种碳纳米管场发射装置 |
| US7169329B2 (en) * | 2003-07-07 | 2007-01-30 | The Research Foundation Of State University Of New York | Carbon nanotube adducts and methods of making the same |
| JP4658490B2 (ja) * | 2004-02-26 | 2011-03-23 | 大研化学工業株式会社 | 電子源及びその製造方法 |
| JP2005265600A (ja) * | 2004-03-18 | 2005-09-29 | Pentax Corp | 基板精度の検出機能を有する露光装置 |
| JP2008505044A (ja) * | 2004-03-26 | 2008-02-21 | フォスター−ミラー,インコーポレーテッド | 電解析出によって製造されたカーボンナノチューブに基づく電子デバイス及びその応用 |
| CN1688011A (zh) * | 2005-05-25 | 2005-10-26 | 中山大学 | 一种改善碳纳米管薄膜冷阴极场发射均匀性的方法 |
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| CN100500556C (zh) * | 2005-12-16 | 2009-06-17 | 清华大学 | 碳纳米管丝及其制作方法 |
| CN101042977B (zh) * | 2006-03-22 | 2011-12-21 | 清华大学 | 碳纳米管场发射电子源及其制造方法以及一场发射阵列 |
| CN101086939B (zh) * | 2006-06-09 | 2010-05-12 | 清华大学 | 场发射元件及其制备方法 |
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| CN101425435B (zh) * | 2007-11-02 | 2013-08-21 | 清华大学 | 场发射电子源及其制备方法 |
| CN101425438B (zh) * | 2007-11-02 | 2011-03-30 | 鸿富锦精密工业(深圳)有限公司 | 一种场发射电子源的制备方法 |
| CN101442848B (zh) * | 2007-11-23 | 2011-12-21 | 清华大学 | 一种局域加热物体的方法 |
| CN101540251B (zh) * | 2008-03-19 | 2012-03-28 | 清华大学 | 场发射电子源 |
| CN101540253B (zh) * | 2008-03-19 | 2011-03-23 | 清华大学 | 场发射电子源的制备方法 |
-
2008
- 2008-03-19 CN CN2008100661282A patent/CN101538031B/zh active Active
- 2008-11-26 US US12/313,935 patent/US20090239072A1/en not_active Abandoned
-
2009
- 2009-03-19 JP JP2009068673A patent/JP4960397B2/ja active Active
-
2013
- 2013-09-27 US US14/040,582 patent/US9771267B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009231287A (ja) | 2009-10-08 |
| CN101538031B (zh) | 2012-05-23 |
| US20140027404A1 (en) | 2014-01-30 |
| CN101538031A (zh) | 2009-09-23 |
| US20090239072A1 (en) | 2009-09-24 |
| US9771267B2 (en) | 2017-09-26 |
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