JP4933576B2 - 電界放出型電子源の製造方法 - Google Patents
電界放出型電子源の製造方法 Download PDFInfo
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- JP4933576B2 JP4933576B2 JP2009068672A JP2009068672A JP4933576B2 JP 4933576 B2 JP4933576 B2 JP 4933576B2 JP 2009068672 A JP2009068672 A JP 2009068672A JP 2009068672 A JP2009068672 A JP 2009068672A JP 4933576 B2 JP4933576 B2 JP 4933576B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 189
- 239000002041 carbon nanotube Substances 0.000 claims description 175
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 175
- 239000000758 substrate Substances 0.000 claims description 54
- 239000002238 carbon nanotube film Substances 0.000 claims description 27
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 239000003960 organic solvent Substances 0.000 claims description 11
- 238000005452 bending Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 21
- 230000005540 biological transmission Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001241 arc-discharge method Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002079 double walled nanotube Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- Carbon And Carbon Compounds (AREA)
Description
12 カーボンナノチューブ糸
122 第一端
124 第二端
126 カーボンナノチューブ
128 カーボンナノチューブ
14 導電基板
16 支持体
18 接着剤
22 第一電極
24 第二電極
28 カーボンナノチューブ糸
Claims (5)
- 複数のカーボンナノチューブを含むカーボンナノチューブ構造体と、第一電極と、第二電極と、を提供する第一ステップと、
前記カーボンナノチューブ構造体の対向する両側を、それぞれ前記第一電極及び第二電極に接続させる第二ステップと、
前記カーボンナノチューブ構造体を有機溶剤で浸漬させて複数のカーボンナノチューブ糸を形成させる第三ステップと、
前記カーボンナノチューブ糸の対向する両端に電圧を印加して、前記カーボンナノチューブ糸を焼き切って、複数のカーボンナノチューブ針を形成する第四ステップと、
前記カーボンナノチューブ針の一端を前記導電基板に固定させる第五ステップと、
を含むことを特徴とする電界放出型電子源の製造方法。 - 前記カーボンナノチューブ構造体はカーボンナノチューブフィルムであり、
前記第二ステップは、
カーボンナノチューブアレイを提供する第一サブステップと、
前記カーボンナノチューブアレイから前記カーボンナノチューブフィルムを引き出す第二サブステップと、
を含むことを特徴とする、請求項1に記載の電界放出型電子源の製造方法。 - 前記第四ステップは、
前記カーボンナノチューブ糸と第一電極と第二電極をチャンバーに設置する第一サブステップと、
前記第一電極及び第二電極の間に電圧を印加して、前記カーボンナノチューブ糸を焼き切って、カーボンナノチューブ針を得る第二サブステップと、
を含むことを特徴とする、請求項1に記載の電界放出型電子源の製造方法。 - 前記第五ステップは、前記導電基板を前記カーボンナノチューブ針と接触させて、前記カーボンナノチューブ針を湾曲させる第一サブステップであって、前記カーボンナノチューブ針の前記第一電極または第二電極に接続された端部とは反対の端部が、前記導電基板の端部から突出されるように、前記カーボンナノチューブ針を前記導電基板に接触させるステップと、
前記カーボンナノチューブ針及び前記導電基板の間に電圧を印加して、前記カーボンナノチューブ針を、前記湾曲された場所から焼き切って、前記導電基板に電界放出型電子源を形成する第二サブステップと、
を含むことを特徴とする、請求項1に記載の電界放出型電子源の製造方法。 - 請求項1の電界放出型電子源の製造方法は第六ステップを含み、
前記第六ステップは、
一端が導電性接着剤で塗布された支持体を提供する第一サブステップと、
前記支持体の前記接着剤が塗布された端部を、前記カーボンナノチューブ針及び前記導電基板に接触させる第二サブステップと、
前記電界放出型電子源に接着された前記接着剤を乾燥させる第三サブステップと、
を含むことを特徴とする、請求項1に記載の電界放出型電子源の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810066127.8 | 2008-03-19 | ||
CN2008100661278A CN101540253B (zh) | 2008-03-19 | 2008-03-19 | 场发射电子源的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009231286A JP2009231286A (ja) | 2009-10-08 |
JP4933576B2 true JP4933576B2 (ja) | 2012-05-16 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009068672A Active JP4933576B2 (ja) | 2008-03-19 | 2009-03-19 | 電界放出型電子源の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7914358B2 (ja) |
JP (1) | JP4933576B2 (ja) |
CN (1) | CN101540253B (ja) |
Families Citing this family (16)
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CN101239712B (zh) * | 2007-02-09 | 2010-05-26 | 清华大学 | 碳纳米管薄膜结构及其制备方法 |
CN101425438B (zh) * | 2007-11-02 | 2011-03-30 | 鸿富锦精密工业(深圳)有限公司 | 一种场发射电子源的制备方法 |
CN101425439B (zh) * | 2007-11-02 | 2010-12-08 | 清华大学 | 一种场发射电子源的制备方法 |
CN101425435B (zh) * | 2007-11-02 | 2013-08-21 | 清华大学 | 场发射电子源及其制备方法 |
CN101538031B (zh) * | 2008-03-19 | 2012-05-23 | 清华大学 | 碳纳米管针尖及其制备方法 |
US8350360B1 (en) | 2009-08-28 | 2013-01-08 | Lockheed Martin Corporation | Four-terminal carbon nanotube capacitors |
US9126836B2 (en) * | 2009-12-28 | 2015-09-08 | Korea University Research And Business Foundation | Method and device for CNT length control |
US20110242310A1 (en) * | 2010-01-07 | 2011-10-06 | University Of Delaware | Apparatus and Method for Electrospinning Nanofibers |
US8405189B1 (en) * | 2010-02-08 | 2013-03-26 | Lockheed Martin Corporation | Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors |
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
CN103295854B (zh) * | 2012-02-23 | 2015-08-26 | 清华大学 | 碳纳米管微尖结构及其制备方法 |
CN103515168B (zh) * | 2012-06-20 | 2016-01-20 | 清华大学 | 热发射电子器件 |
CN106683955B (zh) * | 2015-11-11 | 2019-01-25 | 北京卫星环境工程研究所 | 航天器无功耗自适应电位控制器及其制造方法 |
CN112242281B (zh) * | 2019-07-16 | 2022-03-22 | 清华大学 | 碳纳米管场发射体及其制备方法 |
CN112786416A (zh) * | 2021-03-03 | 2021-05-11 | 大束科技(北京)有限责任公司 | 发射尖端及热场发射电子源 |
CN114284120B (zh) * | 2021-12-27 | 2024-07-23 | 广东粤港澳大湾区国家纳米科技创新研究院 | 一种改性碳纳米锥功能化针尖及其制备方法 |
Family Cites Families (15)
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US6504292B1 (en) | 1999-07-15 | 2003-01-07 | Agere Systems Inc. | Field emitting device comprising metallized nanostructures and method for making the same |
JP2003123623A (ja) | 2001-10-19 | 2003-04-25 | Noritake Itron Corp | 電子放出源用カーボンナノチューブおよびその製造方法 |
CN1433039A (zh) | 2002-01-07 | 2003-07-30 | 深圳大学光电子学研究所 | 基于纳米碳管场发射阵列的全彩色大面积平板显示器 |
JP4180289B2 (ja) * | 2002-03-18 | 2008-11-12 | 喜萬 中山 | ナノチューブ先鋭化方法 |
CN1282211C (zh) | 2002-11-14 | 2006-10-25 | 清华大学 | 一种碳纳米管场发射装置 |
JP2005265600A (ja) * | 2004-03-18 | 2005-09-29 | Pentax Corp | 基板精度の検出機能を有する露光装置 |
JP2008505044A (ja) | 2004-03-26 | 2008-02-21 | フォスター−ミラー,インコーポレーテッド | 電解析出によって製造されたカーボンナノチューブに基づく電子デバイス及びその応用 |
CN1688011A (zh) * | 2005-05-25 | 2005-10-26 | 中山大学 | 一种改善碳纳米管薄膜冷阴极场发射均匀性的方法 |
JP2007179867A (ja) * | 2005-12-28 | 2007-07-12 | Hitachi High-Technologies Corp | 繊維状炭素物質を用いた電子源 |
CN101042977B (zh) | 2006-03-22 | 2011-12-21 | 清华大学 | 碳纳米管场发射电子源及其制造方法以及一场发射阵列 |
CN101086939B (zh) | 2006-06-09 | 2010-05-12 | 清华大学 | 场发射元件及其制备方法 |
CN101425435B (zh) | 2007-11-02 | 2013-08-21 | 清华大学 | 场发射电子源及其制备方法 |
CN101425439B (zh) | 2007-11-02 | 2010-12-08 | 清华大学 | 一种场发射电子源的制备方法 |
CN101425438B (zh) | 2007-11-02 | 2011-03-30 | 鸿富锦精密工业(深圳)有限公司 | 一种场发射电子源的制备方法 |
CN101538031B (zh) * | 2008-03-19 | 2012-05-23 | 清华大学 | 碳纳米管针尖及其制备方法 |
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2008
- 2008-03-19 CN CN2008100661278A patent/CN101540253B/zh active Active
- 2008-11-26 US US12/313,937 patent/US7914358B2/en active Active
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2009
- 2009-03-19 JP JP2009068672A patent/JP4933576B2/ja active Active
Also Published As
Publication number | Publication date |
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CN101540253A (zh) | 2009-09-23 |
JP2009231286A (ja) | 2009-10-08 |
US7914358B2 (en) | 2011-03-29 |
US20090239439A1 (en) | 2009-09-24 |
CN101540253B (zh) | 2011-03-23 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |